A 30mV input battery-less power management system

This paper presents a fully-integrated on chip battery-less power management system through energy harvesting circuit developed in a 130nm CMOS process. A 30mV input voltage from a TEG is able to be boosted by the proposed Complementary Metal-Oxide-Semiconductor (CMOS) voltage booster and a dynamic closed loop power management to a regulated 1.2V. Waste body heat is harvested through Thermoelectric energy harvesting to power up low power devices such as Wireless Body Area Network. A significant finding where 1 Degree Celsius thermal difference produces a minimum 30mV is able to be boosted to 1.2V. Discontinuous Conduction Mode (DCM) digital control oscillator is the key component for the gate control of the proposed voltage booster. Radio Frequency (RF) rectifier is utilized to act as a start-up mechanism for voltage booster and power up the low voltage closed loop power management circuit. The digitally control oscillator and comparator are able to operate at low voltage 600mV which are powered up by a RF rectifier, and thus to kick-start the voltage booster

DESIGN AND IMPLEMENTATION OF ENERGY HARVESTING CIRCUITS FOR MEDICAL DEVICES

Technological enhancements in a low-power CMOS process have promoted enhancement of advanced circuit design techniques for sensor related electronic circuits such as wearable and implantable sensor systems as well as wireless sensor nodes (WSNs). In these systems, the powering up the electronic circuits has remained as a major problem because battery technologies are not closely following the technological improvements in semiconductor devices and processes thus limiting the number of sensor electronics modules that can be incorporated in the design of the system. In addition, the traditional batteries can leak which can cause serious health hazards to the patients especially when using implantable sensors. As an alternative solution to prolonging the life of battery or to mitigate serious health problems that can be caused by battery, energy harvesting technique has appeared to be one of the possible solutions to supply power to the sensor electronics. As a result, this technique has been widely studied and researched in recent years. In a conventional sensor system, the accessible space for batteries is limited, which restricts the battery capacity. Therefore, energy harvesting has become an attractive solution for powering the sensor electronics. Power can be scavenged from ambient energy sources such as electromagnetic signal, wind, solar, mechanical vibration, radio frequency (RF), and thermal energy etc. Among these common ambient sources, RF and piezoelectric vibration-based energy scavenging systems have received a great deal of attention because of their ability to be integrated with sensor electronics modules and their moderate available power density. In this research, both RF and piezoelectric vibration-based energy harvesting systems have been studied and implemented in 130 nm standard CMOS process

Energy autonomous systems : future trends in devices, technology, and systems

The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications

A 30mV Input Battery-Less Power Management System

This paper presents a fully-integrated on chip battery-less power management system through energy harvesting circuit developed in a 130nm CMOS process. A 30mV input voltage from a TEG is able to be boosted by the proposed Complementary Metal-Oxide-Semiconductor (CMOS) voltage booster and a dynamic closed loop power management to a regulated 1.2V. Waste body heat is harvested through Thermoelectric energy harvesting to power up low power devices such as Wireless Body Area Network. A significant finding where 1 Degree Celsius thermal difference produces a minimum 30mV is able to be boosted to 1.2V. Discontinuous Conduction Mode (DCM) digital control oscillator is the key component for the gate control of the proposed voltage booster. Radio Frequency (RF) rectifier is utilized to act as a start-up mechanism for voltage booster and power up the low voltage closed loop power management circuit. The digitally control oscillator and comparator are able to operate at low voltage 600mV which are powered up by a RF rectifier, and thus to kick-start the voltage booste

An Input Power-Aware Maximum Efficiency Tracking Technique for Energy Harvesting in IoT Applications

The Internet of Things (IoT) enables intelligent monitoring and management in many applications such as industrial and biomedical systems as well as environmental and infrastructure monitoring. As a result, IoT requires billions of wireless sensor network (WSN) nodes equipped with a microcontroller and transceiver. As many of these WSN nodes are off-grid and small-sized, their limited-capacity batteries need periodic replacement. To mitigate the high costs and challenges of these battery replacements, energy harvesting from ambient sources is vital to achieve energy-autonomous operation. Energy harvesting for WSNs is challenging because the available energy varies significantly with ambient conditions and in many applications, energy must be harvested from ultra-low power levels. To tackle these stringent power constraints, this dissertation proposes a discontinuous charging technique for switched-capacitor converters that improves the power conversion efficiency (PCE) at low input power levels and extends the input power harvesting range at which high PCE is achievable. Discontinuous charging delivers current to energy storage only during clock non-overlap time. This enables tuning of the output current to minimize converter losses based on the available input power. Based on this fundamental result, an input power-aware, two-dimensional efficiency tracking technique for WSNs is presented. In addition to conventional switching frequency control, clock nonoverlap time control is introduced to adaptively optimize the power conversion efficiency according to the sensed ambient power levels. The proposed technique is designed and simulated in 90nm CMOS with post-layout extraction. Under the same input and output conditions, the proposed system maintains at least 45% PCE at 4μW input power, as opposed to a conventional continuous system which requires at least 18.7μW to maintain the same PCE. In this technique, the input power harvesting range is extended by 1.5x. The technique is applied to a WSN implementation utilizing the IEEE 802.15.4- compatible GreenNet communications protocol for industrial and wearable applications. This allows the node to meet specifications and achieve energy autonomy when deployed in harsher environments where the input power is 49% lower than what is required for conventional operation

High Voltage Energy Harvesters

Green energy helps in reducing carbon emission from fossil fuel, harvesting energy from natural resources like wind to power consumer appliances. To date, many researches have been focusing on designing circuits that harvest energy from electromagnetic signals wirelessly. While it could be designed to be efficient, the generated power however is insufficient to drive large loads. Wind energy is highly available environmentally but development of small-scale energy harvesting apparatus aiming to extract significant power from miniature brushless fan has received limited attention. The aim of this chapter is to give audience an insight of different voltage multipliers used in energy harvester and knowledge on various circuit techniques to configure voltage multipliers for use in different high voltage applications. These include AC-DC converter, AC-AC converter and variable AC-DC converter

Power Management ICs for Internet of Things, Energy Harvesting and Biomedical Devices

This dissertation focuses on the power management unit (PMU) and integrated circuits (ICs) for the internet of things (IoT), energy harvesting and biomedical devices. Three monolithic power harvesting methods are studied for different challenges of smart nodes of IoT networks. Firstly, we propose that an impedance tuning approach is implemented with a capacitor value modulation to eliminate the quiescent power consumption. Secondly, we develop a hill-climbing MPPT mechanism that reuses and processes the information of the hysteresis controller in the time-domain and is free of power hungry analog circuits. Furthermore, the typical power-performance tradeoff of the hysteresis controller is solved by a self-triggered one-shot mechanism. Thus, the output regulation achieves high-performance and yet low-power operations as low as 12 µW. Thirdly, we introduce a reconfigurable charge pump to provide the hybrid conversion ratios (CRs) as 1⅓× up to 8× for minimizing the charge redistribution loss. The reconfigurable feature also dynamically tunes to maximum power point tracking (MPPT) with the frequency modulation, resulting in a two-dimensional MPPT. Therefore, the voltage conversion efficiency (VCE) and the power conversion efficiency (PCE) are enhanced and flattened across a wide harvesting range as 0.45 to 3 V. In a conclusion, we successfully develop an energy harvesting method for the IoT smart nodes with lower cost, smaller size, higher conversion efficiency, and better applicability. For the biomedical devices, this dissertation presents a novel cost-effective automatic resonance tracking method with maximum power transfer (MPT) for piezoelectric transducers (PT). The proposed tracking method is based on a band-pass filter (BPF) oscillator, exploiting the PT’s intrinsic resonance point through a sensing bridge. It guarantees automatic resonance tracking and maximum electrical power converted into mechanical motion regardless of process variations and environmental interferences. Thus, the proposed BPF oscillator-based scheme was designed for an ultrasonic vessel sealing and dissecting (UVSD) system. The sealing and dissecting functions were verified experimentally in chicken tissue and glycerin. Furthermore, a combined sensing scheme circuit allows multiple surgical tissue debulking, vessel sealer and dissector (VSD) technologies to operate from the same sensing scheme board. Its advantage is that a single driver controller could be used for both systems simplifying the complexity and design cost. In a conclusion, we successfully develop an ultrasonic scalpel to replace the other electrosurgical counterparts and the conventional scalpels with lower cost and better functionality

CMOS indoor light energy harvesting system for wireless sensing applications

Dissertação para obtenção do Grau de Doutor em Engenharia Electrotécnica e de ComputadoresThis research thesis presents a micro-power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched-capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT Fractional Open Circuit Voltage (VOC) technique is implemented by an asynchronous state machine (ASM) that creates and, dynamically, adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point (MPP) condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge reusing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm2 in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm2, is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m2. After starting-up, the system requires an irradiance of only 0.18 W/m2 (18 mW/cm2) to remain in operation. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mW. These values are, to the best of the authors’ knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3% for an input power of 48 mW, which is comparable with reported values from circuits operating at similar power levels.Portuguese Foundation for Science and Technology (FCT/MCTES), under project PEst-OE/EEI/UI0066/2011, and to the CTS multiannual funding, through the PIDDAC Program funds. I am also very grateful for the grant SFRH/PROTEC/67683/2010, financially supported by the IPL – Instituto Politécnico de Lisboa

Silicon carbide technology for extreme environments

PhD ThesisWith mankind’s ever increasing curiosity to explore the unknown, including a variety of hostile environments where we cannot tread, there exists a need for machines to do work on our behalf. For applications in the most extreme environments and applications silicon based electronics cannot function, and there is a requirement for circuits and sensors to be built from wide band gap materials capable of operation in these domains. This work addresses the initial development of silicon carbide circuits to monitor conditions and transmit information from such hostile environments. The characterisation, simulation and implementation of silicon carbide based circuits utilising proprietary high temperature passives is explored. Silicon carbide is a wide band gap semiconductor material with highly suitable properties for high-power, high frequency and high temperature applications. The bandgap varies depending on polytype, but the most commonly used polytype 4H, has a value of 3.265 eV at room temperature, which reduces as the thermal ionization of electrons from the valence band to the conduction band increases, allowing operation in ambient up to 600°C. Whilst silicon carbide allows for the growth of a native oxide, the quality has limitations and therefore junction field effect transistors (JFETs) have been utilised as the switch in this work. The characteristics of JFET devices are similar to those of early thermionic valve technology and their use in circuits is well known. In conjunction with JFETs, Schottky barrier diodes (SBDs) have been used as both varactors and rectifiers. Simulation models for high temperature components have been created through their characterisation of their electrical parameters at elevated temperatures. The JFETs were characterised at temperatures up to 573K, and values for TO V , β , λ , IS , RS and junction capacitances were extracted and then used to mathematically describe the operation of circuits using SPICE. The transconductance of SiC JFETs at high temperatures has been shown to decrease quadratically indicating a strong dependence upon carrier mobility in the channel. The channel resistance also decreased quadratically as a direct result of both electric field and temperature enhanced trap emission. The JFETs were tested to be operational up to 775K, where they failed due to delamination of an external passivation layer. ii Schottky diodes were characterised up to 573K, across the temperature range and values for ideality factor, capacitance, series resistance and forward voltage drop were extracted to mathematically model the devices. The series resistance of a SiC SBD exhibited a quadratic relationship with temperature indicating that it is dominated by optical phonon scattering of charge carriers. The observed deviation from a temperature independent ideality factor is due to the recombination of carriers in the depletion region affected by both traps and the formation of an interfacial layer at the SiC/metal interface. To compliment the silicon carbide active devices utilised in this work, high temperature passive devices and packaging/circuit boards were developed. Both HfO2 and AlN materials were investigated for use as potential high temperature capacitor dielectrics in metal-insulator-metal (MIM) capacitor structures. The different thicknesses of HfO2 (60nm and 90nm) and 300nm for AlN and the relevance to fabrication techniques are examined and their effective capacitor behaviour at high temperature explored. The HfO2 based capacitor structures exhibited high levels of leakage current at temperatures above 100°C. Along with elevated leakage when subjected to higher electric fields. This current leakage is due to the thin dielectric and high defect density and essentially turns the capacitors into high value resistors in the order of MΩ. This renders the devices unsuitable as capacitors in hostile environments at the scales tested. To address this issue AlN capacitors with a greater dielectric film thickness were fabricated with reduced leakage currents in comparison even at an electric field of 50MV/cm at 600K. The work demonstrated the world’s first high temperature wireless sensor node powered using energy harvesting technology, capable of operation at 573K. The module demonstrated the world’s first amplitude modulation (AM) and frequency modulation (FM) communication techniques at high temperature. It also demonstrated a novel high temperature self oscillating boost converter cable of boosting voltages from a thermoelectric generator also operating at this temperature. The AM oscillator operated at a maximum temperature of 553K and at a frequency of 19.4MHz with a signal amplitude 65dB above background noise. Realised from JFETs and HfO2 capacitors, modulation of the output signal was achieved by varying the load resistance by use of a second SiC JFET. By applying a negative signal voltage of between -2.5 and -3V, a 50% reduction in the signal amplitude and therefore Amplitude Modulation was achieved by modulating the power within the oscillator through the use of this secondary JFET. Temperature drift in the characteristics were also observed, iii with a decrease in oscillation frequency of almost 200 kHz when the temperature changed from 300K to 573K. This decrease is due to the increase in capacitance density of the HfO2 MIM capacitors and increasing junction capacitances of the JFET used as the amplifier within the oscillator circuit. Direct frequency modulation of a SiC Voltage Controlled Oscillator was demonstrated at a temperature of 573K with a oscillation frequency of 17MHz. Realised from an SiC JFET, AlN capacitors and a SiC SBD used as a varactor. It was possible to vary the frequency of oscillations by 100 kHz with an input signal no greater than 1.5V being applied to the SiC SBD. The effects of temperature drift were more dramatic in comparison to the AM circuit at 400 kHz over the entire temperature range, a result of the properties of the AlN film which causes the capacitors to increase in capacitance density by 10%. A novel self oscillating boost converter was commissioned using a counter wound transformer on high temperature ferrite, a SiC JFET and a SiC SBD. Based upon the operation of a free running blocking oscillator, oscillatory behaviour is a result of the electric and magnetic variations in the winding of the transformer and the amplification characteristics of a JFET. It demonstrated the ability to boost an input voltage of 1.3 volts to 3.9 volts at 573K and exhibited an efficiency of 30% at room temperature. The frequency of operation was highly dependent upon the input voltage due to the increased current flow through the primary coil portion of the transformer and the ambient temperature causing an increase in permeability of the ferrite, thus altering the inductance of both primary and secondary windings. However due its simplicity and its ability to boost the input voltage by 250% meant it was capable of powering the transmitters and in conjunction with a Themoelectric Generator so formed the basis for a self powered high temperature silicon carbide sensor node. The demonstration of these high temperature circuits provide the initial stages of being able to produce a high temperature wireless sensor node capable of operation in hostile environments. Utilising the self oscillating boost converter and a high temperature Thermoelectric Generator these prototype circuits were showed the ability to harvest energy from the high temperature ambient and power the silicon carbide circuitry. Along with appropriate sensor technology it demonstrated the feasibility of being able to monitor and transmit information from hazardous locations which is currently unachievable

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various sources in the far field, dc energy combining, wireless power transfer in the near field, the underlying power management strategies, and the integration on silicon. This integration is the ultimate goal for cheap solutions to enable the technology for broader use. All systems were designed, implemented and tested to demonstrate proof-of concept prototypes