4,886 research outputs found
Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance
In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-diffusion with nonequilibrium Green functions simulations, we show that quantum effects in the charge distribution and transport can reduce or amplify the impact of discrete traps in simulation of reliability resilience of scaled FinFETs
On Small Satellites for Oceanography: A Survey
The recent explosive growth of small satellite operations driven primarily
from an academic or pedagogical need, has demonstrated the viability of
commercial-off-the-shelf technologies in space. They have also leveraged and
shown the need for development of compatible sensors primarily aimed for Earth
observation tasks including monitoring terrestrial domains, communications and
engineering tests. However, one domain that these platforms have not yet made
substantial inroads into, is in the ocean sciences. Remote sensing has long
been within the repertoire of tools for oceanographers to study dynamic large
scale physical phenomena, such as gyres and fronts, bio-geochemical process
transport, primary productivity and process studies in the coastal ocean. We
argue that the time has come for micro and nano satellites (with mass smaller
than 100 kg and 2 to 3 year development times) designed, built, tested and
flown by academic departments, for coordinated observations with robotic assets
in situ. We do so primarily by surveying SmallSat missions oriented towards
ocean observations in the recent past, and in doing so, we update the current
knowledge about what is feasible in the rapidly evolving field of platforms and
sensors for this domain. We conclude by proposing a set of candidate ocean
observing missions with an emphasis on radar-based observations, with a focus
on Synthetic Aperture Radar.Comment: 63 pages, 4 figures, 8 table
Micro-manufacturing : research, technology outcomes and development issues
Besides continuing effort in developing MEMS-based manufacturing techniques, latest effort in Micro-manufacturing is also in Non-MEMS-based manufacturing. Research and technological development (RTD) in this field is encouraged by the increased demand on micro-components as well as promised development in the scaling down of the traditional macro-manufacturing processes for micro-length-scale manufacturing. This paper highlights some EU funded research activities in micro/nano-manufacturing, and gives examples of the latest development in micro-manufacturing methods/techniques, process chains, hybrid-processes, manufacturing equipment and supporting technologies/device, etc., which is followed by a summary of the achievements of the EU MASMICRO project. Finally, concluding remarks are given, which raise several issues concerning further development in micro-manufacturing
3D drift diffusion and 3D Monte Carlo simulation of on-current variability due to random dopants
In this work Random Discrete Dopant induced on-current variations have been studied using the Glasgow 3D atomistic drift/diffusion simulator and Monte Carlo simulations.
A methodology for incorporating quantum
corrections into self-consistent atomistic Monte
Carlo simulations via the density gradient
effective potential is presented.
Quantum corrections based on the density gradient formalism are used to simultaneously capture quantum confinement effects.
The quantum
corrections not only capture charge confinement
effects, but accurately represent the electron impurity
interaction used in previous \textit{ab initio}
atomistic MC simulations, showing agreement with
bulk mobility simulation.
The effect of quantum
corrected transport variation in statistical
atomistic MC simulation is then investigated using
a series of realistic scaled devices nMOSFETs transistors with channel lengths 35 nm, 25 nm, 18nm, 13 nm and 9 nm.
Such simulations result in an increased drain current variability when compared with drift diffusion simulation.
The comprehensive statistical analysis of drain current variations is presented separately for each scaled transistor.
The investigation has shown increased current variation compared with
quantum corrected drift diffusion simulation and
with previous classical MC results.
Furthermore, it has been studied consistently the impact of transport variability due to scattering from random discrete dopants on the on-current variability in realistic nano CMOS transistors.
For the first time, a hierarchic simulation strategy to accurately transfer the increased on-current variability obtained from the âab initioâ MC simulations to DD simulations is subsequently presented.
The MC corrected DD simulations are used to produce target characteristics from which statistical compact models are extracted for use in preliminary design kits at the early stage of new technology development.
The impact of transport variability on the accuracy of delay simulation are investigated in detail.
Accurate compact models extraction methodology transferring results from accurate physical variability simulation into statistical compact models suitable for statistical
circuit simulation is presented. In order to examine te size of this effect on circuits Monte Carlo SPICE simulations of inverter were carried out for 100 samples
Simulation study of scaling design, performance characterization, statistical variability and reliability of decananometer MOSFETs
This thesis describes a comprehensive, simulation based scaling study â including device design, performance characterization, and the impact of statistical variability â on deca-nanometer bulk MOSFETs. After careful calibration of fabrication processes and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length, 1 nm EOT and stress engineering, the simulated devices closely match the performance of contemporary 45 nm CMOS technologies. Scaling to 25 nm, 18 nm and 13 nm gate length n and p devices follows generalized scaling rules, augmented by physically realistic constraints and the introduction of high-k/metal-gate stacks. The scaled devices attain the performance stipulated by the ITRS. Device a.c. performance is analyzed, at device and circuit level. Extrinsic parasitics become critical to nano-CMOS device performance. The thesis describes device capacitance components, analyzes the CMOS inverter, and obtains new insights into the inverter propagation delay in nano-CMOS. The projection of a.c. performance of scaled devices is obtained.
The statistical variability of electrical characteristics, due to intrinsic parameter fluctuation sources, in contemporary and scaled decananometer MOSFETs is systematically investigated for the first time. The statistical variability sources: random discrete dopants, gate line edge roughness and poly-silicon granularity are simulated, in combination, in an ensemble of microscopically different devices. An increasing trend in the standard deviation of the threshold voltage as a function of scaling is observed. The introduction of high-k/metal gates improves electrostatic integrity and slows this trend. Statistical evaluations of variability in Ion and Ioff as a function of scaling are also performed.
For the first time, the impact of strain on statistical variability is studied. Gate line edge roughness results in areas of local channel shortening, accompanied by locally increased strain, both effects increasing the local current. Variations are observed in both the drive current, and in the drive current enhancement normally expected from the application of strain. In addition, the effects of shallow trench isolation (STI) on MOSFET performance and on its statistical variability are investigated for the first time. The inverse-narrow-width effect of STI enhances the current density adjacent to it. This leads to a local enhancement of the influence of junction shapes adjacent to the STI. There is also a statistical impact on the threshold voltage due to random STI induced traps at the silicon/oxide interface
Simulation of charge-trapping in nano-scale MOSFETs in the presence of random-dopants-induced variability
The growing variability of electrical characteristics is a major issue associated with continuous downscaling of contemporary bulk MOSFETs. In addition, the operating conditions brought about by these same scaling trends have pushed MOSFET degradation mechanisms such as Bias Temperature Instability (BTI) to the forefront as a critical reliability threat. This thesis investigates the impact of this ageing phenomena, in conjunction with device variability, on key MOSFET electrical parameters.
A three-dimensional drift-diffusion approximation is adopted as the simulation approach in this work, with random dopant fluctuationsâthe dominant source of statistical variabilityâincluded in the simulations. The testbed device is a realistic 35 nm physical gate length n-channel conventional bulk MOSFET. 1000 microscopically different implementations of the transistor are simulated and subjected to charge-trapping at the oxide interface. The statistical simulations reveal relatively rare but very large threshold voltage shifts, with magnitudes over 3 times than that predicted by the conventional theoretical approach. The physical origin of this effect is investigated in terms of the electrostatic influences of the random dopants and trapped charges on the channel electron concentration. Simulations with progressively increased trapped charge densitiesâemulating the characteristic condition of BTI degradationâresult in further variability of the threshold voltage distribution. Weak correlations of the order of 10-2 are found between the pre-degradation threshold voltage and post-degradation threshold voltage shift distributions.
The importance of accounting for random dopant fluctuations in the simulations is emphasised in order to obtain qualitative agreement between simulation results and published experimental measurements. Finally, the information gained from these device-level physical simulations is integrated into statistical compact models, making the information available to circuit designers
Nanowires: A route to efficient thermoelectric devices
Miniaturization of electronic devices aims at manufacturing ever smaller
products, from mesoscopic to nanoscopic sizes. This trend is challenging
because the increased levels of dissipated power demands a better understanding
of heat transport in small volumes. A significant amount of the consumed energy
is transformed into heat and dissipated to the environment. Thermoelectric
materials offer the possibility to harness dissipated energy and make devices
less energy-demanding. Heat-to-electricity conversion requires materials with a
strongly suppressed thermal conductivity but still high electronic conduction.
Nanowires can meet nicely these two requirements because enhanced phonon
scattering at the surface and defects reduces the lattice thermal conductivity
while electric conductivity is not deteriorated, leading to an overall
remarkable thermoelectric efficiency. Therefore, nanowires are regarded as a
promising route to achieving valuable thermoelectric materials at the
nanoscale. In this paper, we present an overview of key experimental and
theoretical results concerning the thermoelectric properties of nanowires. The
focus of this review is put on the physical mechanisms by which the efficiency
of nanowires can be improved. Phonon scattering at surfaces and interfaces,
enhancement of the power factor by quantum effects and topological protection
of electron states to prevent the degradation of electrical conductivity in
nanowires are thoroughly discussed
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