Reliability and Aging Analysis on SRAMs Within Microprocessor Systems

The majority of transistors in a modern microprocessor are used to implement static random access memories (SRAM). Therefore, it is important to analyze the reliability of SRAM blocks. During the SRAM design, it is important to build in design margins to achieve an adequate lifetime. The two main wearout mechanisms that increase a transistor’s threshold voltage are bias temperature instability (BTI) and hot carrier injections (HCI). BTI and HCI can degrade transistors’ driving strength and further weaken circuit performance. In a microprocessor, first-level (L1) caches are frequently accessed, which make it especially vulnerable to BTI and HCI. In this chapter, the cache lifetimes due to BTI and HCI are studied for different cache configurations, namely, cache size, associativity, cache line size, and replacement algorithm. To give a case study, the failure probability (reliability) and the hit rate (performance) of the L1 cache in a LEON3 microprocessor are analyzed, while the microprocessor is running a set of benchmarks. Essential insights can be provided from our results to give better performance-reliability tradeoffs for cache designers

Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File

Degradation of transistor parameter values due to Negative Bias Temperature Instability (NBTI) has emerged as a major reliability problem in current and future technology generations. NBTI Aging of a Static Random Access Memory (SRAM) cell leads to a lower noise margin, thereby increasing the failure rate. The register file, which consists of an array of SRAM cells, can suffer from data loss, leading to a system failure. In this work, we study the source of NBTI stress in an architecture and physical register file. Based on our study, we modified the register file structure to reduce the NBTI degradation and improve the overall system reliability. Having evaluated new register file structures, we find that our techniques substantially improve reliability of the register files. The new register files have small overhead, while in some cases they provide saving in area and power

Caracterización del envejecimiento en los bancos de registros de microprocesadores x86

La continua miniaturización del transistor compromete la fiabilidad de los circuitos digitales. Entre los efectos que degradan el transistor a lo largo del tiempo, destacan los efectos Bias Temperature Instability (BTI) y Hot Carrier Injection (HCI). Ambos efectos aumentan el voltaje umbral de los transistores, lo cual puede provocar fallos en la ejecución de las aplicaciones, acortando el tiempo de vida útil de los microprocesadores.Los componentes de un procesador más susceptibles a los efectos BTI y HCI son aquellos que integran un mayor número de transistores, se utilizan continuamente y con frecuencia, y tienen un impacto directo en el rendimiento del sistema. En este trabajo, se caracterizan ambos efectos de envejecimiento sobre el banco de registros de un procesador x86 atendiendo a los valores almacenados en esta estructura de memoria. Para ello, se instrumenta un simulador ciclo-a-ciclo que permite emular el comportamiento de un procesador Skylake y extraer estadísticas de uso relacionadas con la degradación de los transistores a partir de la ejecución de un conjunto de aplicaciones científicas.Los resultados experimentales muestran diferentes patrones de degradación dependiendo de la aplicación ejecutada, aunque se pueden extraer características comunes que contribuyen a acelerar la degradación del banco de registros. Por ejemplo, la mayoría de aplicaciones almacenan una gran cantidad de bytes nulos y direcciones de memoria que afectan a celdas específicas de los registros. A partir de un modelo analítico, se comprueba que los transistores de estas celdas sufren el mayor aumento de voltaje umbral al cabo de un uso continuado durante tres años.El estudio de caracterización presentado en este trabajo permitirá diseñar mecanismos arquitectónicos capaces de mitigar o distribuir el desgaste de los transistores de manera homogénea por todo el banco de registros, alargando sustancialmente el tiempo de vida del procesador.<br /

Energy and Reliability in Future NOC Interconnected CMPS

In this dissertation, I explore energy and reliability in future NoC (Network-on-Chip) interconnected CMPs (chip multiprocessors) as they have become a first-order constraint in future CMP design. In the first part, we target the root cause of network energy consumption through techniques that reduce link and router-level switching activity. We specifically focus on memory subsystem traffic, as it comprises the bulk of NoC load in a CMP. By transmitting only the flits that contain words that we predicted would be useful using a novel spatial locality predictor, our scheme seeks to reduce network activity. We aim to further lower NoC energy consumption through microarchitectural mechanisms that inhibit datapath switching activity caused by unused words in individual flits. Using simulation-based performance studies and detailed energy models based on synthesized router designs and different link wire types, we show that (a) the pre- diction mechanism achieves very high accuracy, with an average rate of false-unused prediction of just 2.5%; (b) the combined NoC energy savings enabled by the predictor and microarchitectural support are 36% on average and up to 57% in the best case; and (c) there is no system performance penalty as a result of this technique. In the second part, we present a method for dynamic voltage/frequency scaling of networks-on-chip and last level caches in CMP designs, where the shared resources form a single voltage/frequency domain. We develop a new technique for monitoring and control and validate it by running PARSEC benchmarks through full system simulations. These techniques reduce energy-delay product by 46% compared to a state-of-the-art prior work. In the third part, we develop critical path models for HCI- and NBTI-induced wear assuming stress caused under realistic workload conditions, and apply them onto the interconnect microarchitecture. A key finding from this modeling is that, counter to prevailing wisdom, wearout in the CMP on-chip interconnect is correlated with a lack of load observed in the NoC routers, rather than high load. We then develop a novel wearout-decelerating scheme in which routers under low load have their wearout-sensitive components exercised without significantly impacting the router’s cycle time, pipeline depth, and area or power consumption. We subsequently show that the proposed design yields a 13.8∼65× increase in CMP lifetime

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

PRITEXT: Processor Reliability Improvement Through Exercise Technique

With continuous improvements in CMOS technology, transistor sizes are shrinking aggressively every year. Unfortunately, such deep submicron process technologies are severely degraded by several wearout mechanisms which lead to prolonged operational stress and failure. Negative Bias Temperature Instability (NBTI) is a prominent failure mechanism which degrades the reliability of current semiconductor devices. Improving reliability of processors is necessary for ensuring long operational lifetime which obviates the necessity of mitigating the physical wearout mechanisms. NBTI severely degrades the performance of PMOS transistors in a circuit, when negatively biased, by increasing the threshold voltage leading to critical timing failures over operational lifetime. A lack of activity among the PMOS transistors for long duration leads to a steady increase in threshold voltage Vth. Interestingly, NBTI stress can be recovered by removing the negative bias using appropriate input vectors. Exercising the dormant critical components in the Processor has been proved to reduce the NBTI stress. We use a novel methodology to generate a minimal set of deterministic input vectors which we show to be effective in reducing the NBTI wearout in a superscalar processor core. We then propose and evaluate a new technique PRITEXT, which uses these input vectors in exercise mode to effectively reduce the NBTI stress and improve the operational lifetime of superscalar processors. PRITEXT, which uses Input Vector Control, leads to a 4.5x lifetime improvement of superscalar processor on average with a maximum lifetime improvement of 12.7x

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

A Holistic Solution for Reliability of 3D Parallel Systems

As device scaling slows down, emerging technologies such as 3D integration and carbon nanotube field-effect transistors are among the most promising solutions to increase device density and performance. These emerging technologies offer shorter interconnects, higher performance, and lower power. However, higher levels of operating temperatures and current densities project significantly higher failure rates. Moreover, due to the infancy of the manufacturing process, high variation, and defect densities, chip designers are not encouraged to consider these emerging technologies as a stand-alone replacement for Silicon-based transistors. The goal of this dissertation is to introduce new architectural and circuit techniques that can work around high-fault rates in the emerging 3D technologies, improving performance and reliability comparable to Silicon. We propose a new holistic approach to the reliability problem that addresses the necessary aspects of an effective solution such as detection, diagnosis, repair, and prevention synergically for a practical solution. By leveraging 3D fabric layouts, it proposes the underlying architecture to efficiently repair the system in the presence of faults. This thesis presents a fault detection scheme by re-executing instructions on idle identical units that distinguishes between transient and permanent faults while localizing it to the granularity of a pipeline stage. Furthermore, with the use of a dynamic and adaptive reconfiguration policy based on activity factors and temperature variation, we propose a framework that delivers a significant improvement in lifetime management to prevent faults due to aging. Finally, a design framework that can be used for large-scale chip production while mitigating yield and variation failures to bring up Carbon Nano Tube-based technology is presented. The proposed framework is capable of efficiently supporting high-variation technologies by providing protection against manufacturing defects at different granularities: module and pipeline-stage levels.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/168118/1/javadb_1.pd