Resilient random modulo cache memories for probabilistically-analyzable real-time systems

Fault tolerance has often been assessed separately in safety-related real-time systems, which may lead to inefficient solutions. Recently, Measurement-Based Probabilistic Timing Analysis (MBPTA) has been proposed to estimate Worst-Case Execution Time (WCET) on high performance hardware. The intrinsic probabilistic nature of MBPTA-commpliant hardware matches perfectly with the random nature of hardware faults. Joint WCET analysis and reliability assessment has been done so far for some MBPTA-compliant designs, but not for the most promising cache design: random modulo. In this paper we perform, for the first time, an assessment of the aging-robustness of random modulo and propose new implementations preserving the key properties of random modulo, a.k.a. low critical path impact, low miss rates and MBPTA compliance, while enhancing reliability in front of aging by achieving a better – yet random – activity distribution across cache sets.Peer ReviewedPostprint (author's final draft

On the suitability of time-randomized processors for secure and reliable high-performance computing

Time-randomized processor (TRP) architectures have been shown as one of the most promising approaches to deal with the overwhelming complexity of the timing analysis of high complex processor architectures for safety-related real-time systems. With TRPs the timing analysis step mainly relies on collecting measurements of the task under analysis rather than on complex timing models of the processor. Additionally, randomization techniques applied in TRPs provide increased reliability and security features. In this thesis, we elaborate on the reliability and security properties of TRPs and the suitability of extending this processor architecture design paradigm to the high-performance computing domain

Enhancing the L1 Data Cache Design to Mitigate HCI

Over the lifetime of a microprocessor, the Hot Carrier Injection (HCI) phenomenon degrades the threshold voltage, which causes slower transistor switching and eventually results in timing violations and faulty operation. This effect appears when the memory cell contents flip from logic ‘0’ to ‘1’ and vice versa. In caches, the majority of cell flips are concentrated into only a few of the total memory cells that make up each data word. In addition, other researchers have noted that zero is the most commonly-stored data value in a cache, and have taken advantage of this behavior to propose data compression and power reduction techniques. Contrary to these works, we use this information to extend the lifetime of the caches by introducing two microarchitectural techniques that spread and reduce the number of flips across the first-level (L1) data cache cells. Experimental results show that, compared to the conventional approach, the proposed mechanisms reduce the highest cell flip peak up to 65.8%, whereas the threshold voltage degradation savings range from 32.0% to 79.9% depending on the application.This work has been supported by the Spanish Ministerio de Econom´ıa y Competitividad (MINECO), by FEDER funds through Grant TIN2012-38341-C04-01, by the Intel Early Career Faculty Honor Program Award, by a HiPEAC Collaboration Grant funded by the FP7 HiPEAC Network of Excellence under grant agreement 287759, and by the Engineering and Physical Sciences Research Council (EPSRC) through Grants EP/K026399/1 and EP/J016284/1.This is the author accepted manuscript. The final version is available from IEEE at http://dx.doi.org/10.1109/LCA.2015.2460736. The dataset associated with this article can be found on the repository at https://www.repository.cam.ac.uk/handle/1810/249006

Reliability and Aging Analysis on SRAMs Within Microprocessor Systems

The majority of transistors in a modern microprocessor are used to implement static random access memories (SRAM). Therefore, it is important to analyze the reliability of SRAM blocks. During the SRAM design, it is important to build in design margins to achieve an adequate lifetime. The two main wearout mechanisms that increase a transistor’s threshold voltage are bias temperature instability (BTI) and hot carrier injections (HCI). BTI and HCI can degrade transistors’ driving strength and further weaken circuit performance. In a microprocessor, first-level (L1) caches are frequently accessed, which make it especially vulnerable to BTI and HCI. In this chapter, the cache lifetimes due to BTI and HCI are studied for different cache configurations, namely, cache size, associativity, cache line size, and replacement algorithm. To give a case study, the failure probability (reliability) and the hit rate (performance) of the L1 cache in a LEON3 microprocessor are analyzed, while the microprocessor is running a set of benchmarks. Essential insights can be provided from our results to give better performance-reliability tradeoffs for cache designers

PRITEXT: Processor Reliability Improvement Through Exercise Technique

With continuous improvements in CMOS technology, transistor sizes are shrinking aggressively every year. Unfortunately, such deep submicron process technologies are severely degraded by several wearout mechanisms which lead to prolonged operational stress and failure. Negative Bias Temperature Instability (NBTI) is a prominent failure mechanism which degrades the reliability of current semiconductor devices. Improving reliability of processors is necessary for ensuring long operational lifetime which obviates the necessity of mitigating the physical wearout mechanisms. NBTI severely degrades the performance of PMOS transistors in a circuit, when negatively biased, by increasing the threshold voltage leading to critical timing failures over operational lifetime. A lack of activity among the PMOS transistors for long duration leads to a steady increase in threshold voltage Vth. Interestingly, NBTI stress can be recovered by removing the negative bias using appropriate input vectors. Exercising the dormant critical components in the Processor has been proved to reduce the NBTI stress. We use a novel methodology to generate a minimal set of deterministic input vectors which we show to be effective in reducing the NBTI wearout in a superscalar processor core. We then propose and evaluate a new technique PRITEXT, which uses these input vectors in exercise mode to effectively reduce the NBTI stress and improve the operational lifetime of superscalar processors. PRITEXT, which uses Input Vector Control, leads to a 4.5x lifetime improvement of superscalar processor on average with a maximum lifetime improvement of 12.7x

Caracterización del envejecimiento en los bancos de registros de microprocesadores x86

La continua miniaturización del transistor compromete la fiabilidad de los circuitos digitales. Entre los efectos que degradan el transistor a lo largo del tiempo, destacan los efectos Bias Temperature Instability (BTI) y Hot Carrier Injection (HCI). Ambos efectos aumentan el voltaje umbral de los transistores, lo cual puede provocar fallos en la ejecución de las aplicaciones, acortando el tiempo de vida útil de los microprocesadores.Los componentes de un procesador más susceptibles a los efectos BTI y HCI son aquellos que integran un mayor número de transistores, se utilizan continuamente y con frecuencia, y tienen un impacto directo en el rendimiento del sistema. En este trabajo, se caracterizan ambos efectos de envejecimiento sobre el banco de registros de un procesador x86 atendiendo a los valores almacenados en esta estructura de memoria. Para ello, se instrumenta un simulador ciclo-a-ciclo que permite emular el comportamiento de un procesador Skylake y extraer estadísticas de uso relacionadas con la degradación de los transistores a partir de la ejecución de un conjunto de aplicaciones científicas.Los resultados experimentales muestran diferentes patrones de degradación dependiendo de la aplicación ejecutada, aunque se pueden extraer características comunes que contribuyen a acelerar la degradación del banco de registros. Por ejemplo, la mayoría de aplicaciones almacenan una gran cantidad de bytes nulos y direcciones de memoria que afectan a celdas específicas de los registros. A partir de un modelo analítico, se comprueba que los transistores de estas celdas sufren el mayor aumento de voltaje umbral al cabo de un uso continuado durante tres años.El estudio de caracterización presentado en este trabajo permitirá diseñar mecanismos arquitectónicos capaces de mitigar o distribuir el desgaste de los transistores de manera homogénea por todo el banco de registros, alargando sustancialmente el tiempo de vida del procesador.<br /

Energy and Reliability in Future NOC Interconnected CMPS

In this dissertation, I explore energy and reliability in future NoC (Network-on-Chip) interconnected CMPs (chip multiprocessors) as they have become a first-order constraint in future CMP design. In the first part, we target the root cause of network energy consumption through techniques that reduce link and router-level switching activity. We specifically focus on memory subsystem traffic, as it comprises the bulk of NoC load in a CMP. By transmitting only the flits that contain words that we predicted would be useful using a novel spatial locality predictor, our scheme seeks to reduce network activity. We aim to further lower NoC energy consumption through microarchitectural mechanisms that inhibit datapath switching activity caused by unused words in individual flits. Using simulation-based performance studies and detailed energy models based on synthesized router designs and different link wire types, we show that (a) the pre- diction mechanism achieves very high accuracy, with an average rate of false-unused prediction of just 2.5%; (b) the combined NoC energy savings enabled by the predictor and microarchitectural support are 36% on average and up to 57% in the best case; and (c) there is no system performance penalty as a result of this technique. In the second part, we present a method for dynamic voltage/frequency scaling of networks-on-chip and last level caches in CMP designs, where the shared resources form a single voltage/frequency domain. We develop a new technique for monitoring and control and validate it by running PARSEC benchmarks through full system simulations. These techniques reduce energy-delay product by 46% compared to a state-of-the-art prior work. In the third part, we develop critical path models for HCI- and NBTI-induced wear assuming stress caused under realistic workload conditions, and apply them onto the interconnect microarchitecture. A key finding from this modeling is that, counter to prevailing wisdom, wearout in the CMP on-chip interconnect is correlated with a lack of load observed in the NoC routers, rather than high load. We then develop a novel wearout-decelerating scheme in which routers under low load have their wearout-sensitive components exercised without significantly impacting the router’s cycle time, pipeline depth, and area or power consumption. We subsequently show that the proposed design yields a 13.8∼65× increase in CMP lifetime

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

Exploiting heterogeneity in Chip-Multiprocessor Design

In the past decade, semiconductor manufacturers are persistent in building faster and smaller transistors in order to boost the processor performance as projected by Moore’s Law. Recently, as we enter the deep submicron regime, continuing the same processor development pace becomes an increasingly difficult issue due to constraints on power, temperature, and the scalability of transistors. To overcome these challenges, researchers propose several innovations at both architecture and device levels that are able to partially solve the problems. These diversities in processor architecture and manufacturing materials provide solutions to continuing Moore’s Law by effectively exploiting the heterogeneity, however, they also introduce a set of unprecedented challenges that have been rarely addressed in prior works. In this dissertation, we present a series of in-depth studies to comprehensively investigate the design and optimization of future multi-core and many-core platforms through exploiting heteroge-neities. First, we explore a large design space of heterogeneous chip multiprocessors by exploiting the architectural- and device-level heterogeneities, aiming to identify the optimal design patterns leading to attractive energy- and cost-efficiencies in the pre-silicon stage. After this high-level study, we pay specific attention to the architectural asymmetry, aiming at developing a heterogeneity-aware task scheduler to optimize the energy-efficiency on a given single-ISA heterogeneous multi-processor. An advanced statistical tool is employed to facilitate the algorithm development. In the third study, we shift our concentration to the device-level heterogeneity and propose to effectively leverage the advantages provided by different materials to solve the increasingly important reliability issue for future processors

Daily Eastern News: September 09, 1994

https://thekeep.eiu.edu/den_1994_sep/1006/thumbnail.jp