Fast offset compensation for a 10Gbps limit amplifier

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.Includes bibliographical references (p. 117-118).A novel offset voltage compensation method is presented that significantly modifies the existing tradeoff between control loop bandwidth, and therefore total compensation time, and total output jitter. The proposed system achieves comparable output jitter performance to traditional approaches while significantly reducing the total compensation time by nearly three orders of magnitude. Traditional offset compensation methods are based on simple offset measurement techniques that generally rely on passive compensation blocks and exhibit a direct inverse relationship between total compensation time and resulting output jitter. Therefore, current high-speed data-link systems suffer from extremely long offset compensation loop settling times in order to satisfy the strict protocol jitter specifications. In the proposed system, the new CMOS peak detector design is the enabling component that allows us break this relationship and achieve extremely fast settling behavior while preventing data dependence of the control signal. Simulated results show that the implemented system can achieve output jitter performance similar to existing methods while dramatically improving the compensation time. Specifically, the proposed system can achieve less than 2pS of peak-to-peak jitter, or less than 700fS of RMS jitter, while reducing the total compensation time from roughly 500[mu]S to less than 1[mu]S. The system was implemented in National Semiconductor's CMOS9 0.18[mu]m CMOS process. Packaged parts will be tested to verify agreement with simulated performance.by Ethan A. Crain.M.Eng

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

Development of CMOS active pixel sensors

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.Engineering and Physical Sciences Research Council; e2v Technologie

Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device\u27s excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device\u27s performance. In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, down to 93K. This single expansive temperature, SET, model supports all functions of circuit simulation; DC quiescent operation and AC frequency response. The SET model was developed from the Mextram 504.7 bipolar model and accurately represents full transistor operation over an extreme temperature environment. The model correctly simulates SiGe HBT DC output performance from saturation, through quasi-saturation and the linear region including impact ionization effects. This model was developed through a combination of physical calculations based on doping profiles and optimization techniques for modeling fitting. The SET model of this dissertation added 32 parameters to the original Mextram 504.7 model\u27s 78 parameters. The device\u27s static and dynamic performance over the full temperature range down to 93K was fitted with a single group of SET model parameters. The model results show excellent correlation with measured data over the entire temperature range

CMOS Active Gate Driver for Closed-Loop dv/dt Control of Wide Bandgap Power Transistors

Wide bandgap (WBG) power transistors such as SiC MOSFETs and GaN HEMTs are a real breakthrough in power electronics. These power semiconductor devices have lower conduction and switching losses than their Silicon competitors. However, the fast switching transients can be an issue in terms of Electromagnetic Interferences (EMI). Consequently, one must slow down the switching speeds of WBG transistors to comply with EMI limitations, which reduces their advantages in terms of higher switching frequencies and lower total losses. In this work, an active gate driver is proposed to control the switching speed of wide bandgap semiconductor power transistors. An innovative closed-loop control circuit makes it possible to adjust separately the dv/dt and di/dt during the switching sequences. Overall, the dv/dt values can be reduced to comply with system-level limits of EMI, with less switching losses than existing methods. The proposed method is thoroughly investigated, with analytic and numerical models to assess the key performances: feedback loop bandwidth, optimal circuit design, area consumption. Selected and optimal designs are implemented in two integrated circuits in CMOS technology which demonstrate delay times below the nanosecond. With such performances, it has been shown experimentally that it is possible to actively control switching speeds higher than 100 V/ns under voltages of 400 V

Development of CMOS active pixel sensors

This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for scientific imaging applications. CMOS APS offer a number of advantages over the established charge-coupled device (CCD) technology, primarily in the areas of low power consumption, high-speed parallel readout and random (X-Y) addressing, increased system integration and improved radiation hardness. The investigation used a range of newly designed Test Structures in conjunction with a range of custom developed test equipment to characterise device performance. Initial experimental work highlighted the significant non-linearity in the charge conversion gain (responsivity) and found the read noise to be limited by the kTC component due to resetting of the pixel capacitance. The major experimental study investigated the contribution to dark signal due to hot-carrier injection effects from the in-pixel transistors during read-out and highlighted the importance of the contribution at low signal levels. The quantum efficiency (QE) and cross-talk were also investigated and found to be limited by the pixel fill factor and shallow depletion depth of the photodiode. The work has highlighted the need to design devices to explore the effects of individual components rather than stand-alone imaging devices and indicated further developments are required for APS technology to compete with the CCD for high-end scientific imaging applications. The main areas requiring development are in achieving backside illuminated, deep depletion devices with low dark signal and low noise sampling techniques.EThOS - Electronic Theses Online ServiceEngineering and Physical Sciences Research Councile2v TechnologiesGBUnited Kingdo

Primitives and design of the intelligent pixel multimedia communicator

Communication systems arc an ever more essential component of our modern global society. Mobile communications systems are still in a state of rapid advancement and growth. Technology is constantly evolving at a rapid pace in ever more diverse areas and the emerging mobile multimedia based communication systems offer new challenges for both current and future technologies. To realise the full potential of mobile multimedia communication systems there is a need to explore new options to solve some of the fundamental problems facing the technology. In particular, the complexity of such a system within an infrastructure framework that is inherently limited by its power sources and has very restricted transmission bandwidth demands new methodologies and approaches

Design and implementation of miniaturised capsule for autofluorescence detection with possible application to the bowel disease

Early signs of intestinal cancer may be detected through variations in tissue autofluorescence (AF), however current endoscope-based AF systems are unable to inspect the small intestine. This thesis describes the design, fabrication, implantation, testing and packaging of a wireless pill capable of detecting the autofluorescence from cancerous cells, and able to reach parts of the gastrointestinal tract that are inaccessible to endoscopes. The pill exploits the fact that there is a significant difference in the intensity of autofluorescence emitted by normal and cancerous tissues when excited by a blue or ultra violet light source. The intensity differences are detected using very sensitive light detectors. The pill has been developed in two stages. The first stage starts with using an off-chip multi-pixel photon counter (MPPC) device as a light detector. In the second stage, the light detector is integrated into an application specific integrated circuit (ASIC). The pill comprises of an ASIC, optical filters, an information processing unit and a radio transmission unit, to transmit acquired data to an external base station. Two ASICs have been fabricated, the first stage of this work involved implementing an ASIC that contains two main blocks; the first block is capable of providing a variable DC voltage more than 72 V from a 3 V input to bias the MPPC device. The second main block is a front-end consisting of a high speed transimpedance amplifier (TIA) and voltage amplifiers to capture the very small current pulses produced by the MPPC. The second ASIC contains a high voltage charge pump up to (37.9 V) integrated with a single photon avalanche detector (SPAD). The charge pump is used to bias the SPAD above its breakdown voltage and therefore operate the device in Geiger mode. The SPAD was designed to operate in the visible region where its photon detection efficiency (PDE) peaks at 465 nm, which is near to human tissues autofluorescence peaking region (520±10 nm). The use of the ultra low light detector to detect the autofluorescence permits a lower excitation light intensity and therefore lower overall power consumption. The two ASICs were fabricated using a commercial triple-well high-voltage CMOS process. The complete device operates at 3V and draws an average of 7.1mA, enabling up to 23 hours of continuous operation from two 165mAh SR44 batteries

Analyse et modélisation des phénomènes de mismatch des transistors MOSFET avancées

For correct operation, certain analog and digital circuits, such as current mirrors or SRAM, require pairs of MOS transistors that are electrically identical. Real devices, however, suffer from random local variations in the electrical parameters, a problem referred to as mismatch. The aim of this thesis is to understand the physical causes of mismatch, to quantify this phenomenon, and to propose solutions that enable to reduce its effects. In this context, four major areas are treated. The first one focuses on the optimization of mismatch measurement methodologies. A new technique for the measurement of Vt and β mismatch and an ID mismatch model are proposed, analyzed and applied to experimental data for 28 nm Bulk and FD SOI technologies. The second area focuses on the characterization of different configurations of MOS transistors in order to propose design architectures that are optimized for certain applications. Specifically, the possibility of replacing LDEMOS with transistors in cascode configuration is analyzed. The third area focuses on the analysis and modeling of mismatch phenomena in advanced Bulk and SOI transistors. Three aspects are analyzed: 1) the impact of the introduction of germanium in P channel of 28nm BULK transistors; 2) the elimination of the metal gate contribution to Vt mismatch by using 20nm Gate-last Bulk technology; 3) a descriptive study of the principal contributions to Vt, β and ID mismatch in 28 and 14 nm FD SOI technologies. The last area treats the mismatch trends with transistor aging. NBTI stress tests were applied to PMOS 28nm FD SOI transistors. Models of the Vt and β mismatch trends as a function of the induced interface traps and fixed charges at the Si/SiO2 interface and in the oxide were developed and discussed.Afin de réaliser correctement leur fonction, certains blocs analogiques ou numériques comme les miroirs de courant ou les SRAM, nécessitent des paires de transistors MOS électriquement identiques. Cependant, les dispositifs sur silicium, même appariés, subissent des variations locales aléatoires ce qui fait varier leurs performances électriques. Ce phénomène est connu sous le nom désappariement. L'objectif de cette thèse est de comprendre les causes physiques de ce désappariement, de le quantifier et de proposer des solutions pour le réduire. Dans ce contexte, quatre thèmes principaux sont développés. Le premier thème se focalise sur l'optimisation des méthodologies de mesures des phénomènes de désappariement. Une nouvelle méthode de mesure du désappariement de Vt et de β ainsi qu'un nouveau modèle de désappariement de ID sont proposés, analysés et appliqués à des données mesurées sur des technologies 28nm Bulk et FD SOI. Le second thème se concentre sur la caractérisation des différentes configurations de transistor MOS afin de proposer l'architecture optimale en fonction des applications visées. Ainsi, la possibilité de remplacer le LDEMOS par une configuration cascode est analysée en détail. Le troisième thème se focalise sur l'analyse et la modélisation des phénomènes de désappariement des transistors MOS avancés. Trois aspects sont analysés : 1) l'introduction du Ge dans le canal P des technologies 28nm BULK, 2) la suppression de la contribution de la grille sur le désappariement de Vt en utilisant la technologie 20 nm métal-Gate-Last 3) un descriptif des principaux contributeurs au désappariement de Vt, β et ID dans les technologies 28 et 14nm FD SOI. Le dernier thème traite du comportement du désappariement des transistors MOS après vieillissement. Un vieillissement NBTI a été appliqué sur des PMOS de la technologie 28nm FD SOI. Des modèles de comportement de Vt et de β en fonction du nombre de charges fixes ou d'états d'interfaces induits à l'interface Si/SiO2 ou dans l'oxyde sont proposés et analysés