Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying

Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a {\pi}-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments

Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors

We report an optical link on silicon using micrometer-scale ring-resonator enhanced silicon modulators and waveguide-integrated germanium photodetectors. We show 3 Gbps operation of the link with 0.5 V modulator voltage swing and 1.0 V detector bias. The total energy consumption for such a link is estimated to be ~120 fJ/bit. Such compact and low power monolithic link is an essential step towards large-scale on-chip optical interconnects for future microprocessors

Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer

Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of V{\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators based on non-band-engineered PCWs and ring-resonators.Comment: 12 pages, 4 figures, SPIE Photonics West Conference 201

Ultrafast electrooptic dual-comb interferometry

The femtosecond laser frequency comb has enabled the 21st century revolution in optical synthesis and metrology. A particularly compelling technique that relies on the broadband coherence of two laser frequency combs is dual-comb interferometry. This method is rapidly advancing the field of optical spectroscopy and empowering new applications, from nonlinear microscopy to laser ranging. Up to now, most dual-comb interferometers were based on modelocked lasers, whose repetition rates have restricted the measurement speed to ~ kHz. Here we demonstrate a novel dual-comb interferometer that is based on electrooptic frequency comb technology and measures consecutive complex spectra at a record-high refresh rate of 25 MHz. These results pave the way for novel scientific and metrology applications of frequency comb generators beyond the realm of molecular spectroscopy, where the measurement of ultrabroadband waveforms is of paramount relevance

Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as well as a large beam width which enables the detection of electromagnetic waves from a large range of incident angles. The sensor is experimentally demonstrated with a minimum detectable electromagnetic power density of 8.4mW/m2 at 8.4GHz, corresponding to a minimum detectable electric field of 2.5V/m and an ultra-high sensitivity of 0.000027V/m Hz^-1/2 ever demonstrated. To the best of our knowledge, this is the first silicon-organic hybrid device and also the first PCW device used for the photonic detection of electromagnetic waves. Finally, we propose some future work, including a Teraherz wave sensor based on antenna-coupled electro-optic polymer filled plasmonic slot waveguide, as well as a fully packaged and tailgated device.Comment: 20 pages, 16 figure