Multistable dynamics and control of a new 4D memristive chaotic Sprott B system

This work proposes and investigates the dynamic behavior of a new memristive chaotic Sprott B system. One of the interesting features of this system is that it has a bias term that can adjust the symmetry of the proposed model, inducing both homogeneous and heterogeneous behaviors. Indeed, the introduced memristive system can turn from rotational symmetry (RS) to rotational symmetry broken (RSB) system in the presence or the absence of this bias term. In the RS system (i.e., absence of the bias term), pairs of symmetric attractors are formed, and the scenario of attractor merging is observed. Coexisting symmetric attractors and bifurcations with up to four solutions are perfectly investigated. In the RSB system (i.e., the bias term is non-zero), many interesting phenomena are demonstrated, including asymmetric attractors, coexisting asymmetric bifurcations, various types of coexisting asymmetric solutions, and period-doubling transition to chaos. We perfectly demonstrate that the new asymmetric/symmetric memristive system exhibits the exciting phenomenon of partial amplitude control (PAC) and offset boosting. Also, we show how it is possible to control the amplitude and the offset of the chaotic signals generated for some technological exploitation. Finally, coexisting solutions (i.e., multistability) found in the novel memristive system are further controlled based on a linear augmentation (LA) scheme. Our numerical findings demonstrated the effectiveness of the control technic through interior crisis, reverse period-doubling scenario, and symmetry restoring crisis. The coupled memristive system remains stable with its unique survived periodic attractor for higher values of the coupling strength

Symmetry in Chaotic Systems and Circuits

Symmetry can play an important role in the field of nonlinear systems and especially in the design of nonlinear circuits that produce chaos. Therefore, this Special Issue, titled “Symmetry in Chaotic Systems and Circuits”, presents the latest scientific advances in nonlinear chaotic systems and circuits that introduce various kinds of symmetries. Applications of chaotic systems and circuits with symmetries, or with a deliberate lack of symmetry, are also presented in this Special Issue. The volume contains 14 published papers from authors around the world. This reflects the high impact of this Special Issue

Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell

Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971. Kesti kuitenkin yli kolmekymmentä vuotta ennen kuin teoria pystyttiin yhdistämään kokeellisiin tuloksiin. Vuonna 2008 Hewlett Packard julkaisi artikkelin, jossa he väittivät valmistaneensa ensimmäisen toimivan memristorin. Memristori eli muistivastus on resistiivinen komponentti, jonka vastusarvoa pystytään muuttamaan. Nimens mukaisesti memristori kykenee myös säilyttämään vastusarvonsa ilman jatkuvaa virtaa ja jännitettä. Tyypillisesti memristorilla on vähintään kaksi vastusarvoa, joista kumpikin pystytään valitsemaan syöttämällä komponentille jännitettä tai virtaa. Tämän vuoksi memristoreita kutsutaankin usein resistiivisiksi kytkimiksi. Resistiivisiä kytkimiä tutkitaan nykyään paljon erityisesti niiden mahdollistaman muistiteknologian takia. Resistiivisistä kytkimistä rakennettua muistia kutsutaan ReRAM-muistiksi (lyhenne sanoista resistive random access memory). ReRAM-muisti on Flash-muistin tapaan haihtumaton muisti, jota voidaan sähköisesti ohjelmoida tai tyhjentää. Flash-muistia käytetään tällä hetkellä esimerkiksi muistitikuissa. ReRAM-muisti mahdollistaa kuitenkin nopeamman ja vähävirtaiseman toiminnan Flashiin verrattuna, joten se on tulevaisuudessa varteenotettava kilpailija markkinoilla. ReRAM-muisti mahdollistaa myös useammin bitin tallentamisen yhteen muistisoluun binäärisen (”0” tai ”1”) toiminnan sijaan. Tyypillisesti ReRAM-muistisolulla on kaksi rajoittavaa vastusarvoa, mutta näiden kahden tilan välille pystytään mahdollisesti ohjelmoimaan useampia tiloja. Muistisoluja voidaan kutsua analogisiksi, jos tilojen määrää ei ole rajoitettu. Analogisilla muistisoluilla olisi mahdollista rakentaa tehokkaasti esimerkiksi neuroverkkoja. Neuroverkoilla pyritään mallintamaan aivojen toimintaa ja suorittamaan tehtäviä, jotka ovat tyypillisesti vaikeita perinteisille tietokoneohjelmille. Neuroverkkoja käytetään esimerkiksi puheentunnistuksessa tai tekoälytoteutuksissa. Tässä diplomityössä tarkastellaan Ta2O5 -perustuvan ReRAM-muistisolun analogista toimintaa pitäen mielessä soveltuvuus neuroverkkoihin. ReRAM-muistisolun valmistus ja mittaustulokset käydään läpi. Muistisolun toiminta on harvoin täysin analogista, koska kahden rajoittavan vastusarvon välillä on usein rajattu määrä tiloja. Tämän vuoksi toimintaa kutsutaan pseudoanalogiseksi. Mittaustulokset osoittavat, että yksittäinen ReRAM-muistisolu kykenee binääriseen toimintaan hyvin. Joiltain osin yksittäinen solu kykenee tallentamaan useampia tiloja, mutta vastusarvoissa on peräkkäisten ohjelmointisyklien välillä suurta vaihtelevuutta, joka hankaloittaa tulkintaa. Valmistettu ReRAM-muistisolu ei sellaisenaan kykene toimimaan pseudoanalogisena muistina, vaan se vaati rinnalleen virtaa rajoittavan komponentin. Myös valmistusprosessin kehittäminen vähentäisi yksittäisen solun toiminnassa esiintyvää varianssia, jolloin sen toiminta muistuttaisi enemmän pseudoanalogista muistia.The memristor is one of the fundamental circuit elements in addition to a resistor, capacitor and an inductor. It is a passive component whose theory was postulated by Leon Chua in 1971. It took over 30 years before any known physical examples were discovered. In 2008 Hewlett Packard published an article where they manufactured a device which they claimed to be the first memristor found. The memristor, which is a concatenation of memory resistor, is a resistive component that has an ability to change its resistance. It can also remember its resistance value without continuous current or voltage. Typically, a memristor has at least two resistance states that can be altered. This is the reason why memristors are also called resistive switches. Resistive switches can be used in memory technologies. A memory array that has been built using resistive switches is called ReRAM (resistive random access memory). ReRAM, like Flash memory, is a non-volatile memory that can be programmed or erased electrically. Flash memories are currently used e.g. in memory sticks. However, compared to Flash, ReRAM has faster operating speed and lower power consumption, for instance. It could potentially replace current memory standards in future. A ReRAM memory cell can also store multiple bits instead of binary operation (”0” or ”1”). Typically there exists multiple intermediate resistance states between ReRAM’s limiting resistances that could be utilized. Such memory could be called analog, if the amount of intermediate states is not limited to discrete levels. Analog memories make it possible to build artificial neural networks (ANN) efficiently, for instance. ANNs try to model the behaviour of brain and to perform tasks that are difficult for traditional computer programs such as speech recognition or artificial intelligence. This thesis studies the analog behaviour of Ta 2 O 5 -based ReRAM cell. Manufacturing process and measurement results are presented. The operation of ReRAM cell is rarely fully analog as there exists limited amount of intermediate resistance states. This is the reason why operation is called pseudo-analog. Measurement results show that a single ReRAM cell is suitable for binary operation. In some cases, a single cell can store multiple resistance values but there exists significant variance in resistance states between subsequent programming cycles. The proposed ReRAM cell cannot operate as pseudo-analog ReRAM cell in itself as it needs an external current limiting component. Improving the manufacturing process should reduce the variability such that the operation would be more like a pseudo-analog memory.Siirretty Doriast

Chaos in Vallis' asymmetric Lorenz model for El Nino

AbstractWe consider Vallis’ symmetric and asymmetric Lorenz models for El Niño—systems of autonomous ordinary differential equations in 3D—with the usual parameters and, in both cases, by using rigorous numerics, we locate topological horseshoes in iterates of Poincaré return maps. The computer-assisted proofs follow the standard Mischaikow–Mrozek–Zgliczynski approach. The novelty is a dimension reduction method, a direct exploitation of numerical Lorenz-like maps associated to the two components of the Poincaré section

18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems: Proceedings

Proceedings of the 18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems, which took place in Dresden, Germany, 26 – 28 May 2010.:Welcome Address ........................ Page I Table of Contents ........................ Page III Symposium Committees .............. Page IV Special Thanks ............................. Page V Conference program (incl. page numbers of papers) ................... Page VI Conference papers Invited talks ................................ Page 1 Regular Papers ........................... Page 14 Wednesday, May 26th, 2010 ......... Page 15 Thursday, May 27th, 2010 .......... Page 110 Friday, May 28th, 2010 ............... Page 210 Author index ............................... Page XII

Applications of memristors in conventional analogue electronics

This dissertation presents the steps employed to activate and utilise analogue memristive devices in conventional analogue circuits and beyond. TiO2 memristors are mainly utilised in this study, and their large variability in operation in between similar devices is identified. A specialised memristor characterisation instrument is designed and built to mitigate this issue and to allow access to large numbers of devices at a time. Its performance is quantified against linear resistors, crossbars of linear resistors, stand-alone memristive elements and crossbars of memristors. This platform allows for a wide range of different pulsing algorithms to be applied on individual devices, or on crossbars of memristive elements, and is used throughout this dissertation. Different ways of achieving analogue resistive switching from any device state are presented. Results of these are used to devise a state-of-art biasing parameter finder which automatically extracts pulsing parameters that induce repeatable analogue resistive switching. IV measurements taken during analogue resistive switching are then utilised to model the internal atomic structure of two devices, via fittings by the Simmons tunnelling barrier model. These reveal that voltage pulses modulate a nano-tunnelling gap along a conical shape. Further retention measurements are performed which reveal that under certain conditions, TiO2 memristors become volatile at short time scales. This volatile behaviour is then implemented into a novel SPICE volatile memristor model. These characterisation methods of solid-state devices allowed for inclusion of TiO2 memristors in practical electronic circuits. Firstly, in the context of large analogue resistive crossbars, a crosspoint reading method is analysed and improved via a 3-step technique. Its scaling performance is then quantified via SPICE simulations. Next, the observed volatile dynamics of memristors are exploited in two separate sequence detectors, with applications in neuromorphic engineering. Finally, the memristor as a programmable resistive weight is exploited to synthesise a memristive programmable gain amplifier and a practical memristive automatic gain control circuit.Open Acces

Avalanches and the edge-of-chaos in neuromorphic nanowire networks

The brain's efficient information processing is enabled by the interplay between its neuro-synaptic elements and complex network structure. This work reports on the neuromorphic dynamics of nanowire networks (NWNs), a brain-inspired system with synapse-like memristive junctions embedded within a recurrent neural network-like structure. Simulation and experiment elucidate how collective memristive switching gives rise to long-range transport pathways, drastically altering the network's global state via a discontinuous phase transition. The spatio-temporal properties of switching dynamics are found to be consistent with avalanches displaying power-law size and life-time distributions, with exponents obeying the crackling noise relationship, thus satisfying criteria for criticality. Furthermore, NWNs adaptively respond to time varying stimuli, exhibiting diverse dynamics tunable from order to chaos. Dynamical states at the edge-of-chaos are found to optimise information processing for increasingly complex learning tasks. Overall, these results reveal a rich repertoire of emergent, collective dynamics in NWNs which may be harnessed in novel, brain-inspired computing approaches

Organic electrochemical networks for biocompatible and implantable machine learning: Organic bioelectronic beyond sensing

How can the brain be such a good computer? Part of the answer lies in the astonishing number of neurons and synapses that process electrical impulses in parallel. Part of it must be found in the ability of the nervous system to evolve in response to external stimuli and grow, sharpen, and depress synaptic connections. However, we are far from understanding even the basic mechanisms that allow us to think, be aware, recognize patterns, and imagine. The brain can do all this while consuming only around 20 Watts, out-competing any human-made processor in terms of energy-efficiency. This question is of particular interest in a historical era and technological stage where phrases like machine learning and artificial intelligence are more and more widespread, thanks to recent advances produced in the field of computer science. However, brain-inspired computation is today still relying on algorithms that run on traditional silicon-made, digital processors. Instead, the making of brain-like hardware, where the substrate itself can be used for computation and it can dynamically update its electrical pathways, is still challenging. In this work, I tried to employ organic semiconductors that work in electrolytic solutions, called organic mixed ionic-electronic conductors (OMIECs) to build hardware capable of computation. Moreover, by exploiting an electropolymerization technique, I could form conducting connections in response to electrical spikes, in analogy to how synapses evolve when the neuron fires. After demonstrating artificial synapses as a potential building block for neuromorphic chips, I shifted my attention to the implementation of such synapses in fully operational networks. In doing so, I borrowed the mathematical framework of a machine learning approach known as reservoir computing, which allows computation with random (neural) networks. I capitalized my work on demonstrating the possibility of using such networks in-vivo for the recognition and classification of dangerous and healthy heartbeats. This is the first demonstration of machine learning carried out in a biological environment with a biocompatible substrate. The implications of this technology are straightforward: a constant monitoring of biological signals and fluids accompanied by an active recognition of the presence of malign patterns may lead to a timely, targeted and early diagnosis of potentially mortal conditions. Finally, in the attempt to simulate the random neural networks, I faced difficulties in the modeling of the devices with the state-of-the-art approach. Therefore, I tried to explore a new way to describe OMIECs and OMIECs-based devices, starting from thermodynamic axioms. The results of this model shine a light on the mechanism behind the operation of the organic electrochemical transistors, revealing the importance of the entropy of mixing and suggesting new pathways for device optimization for targeted applications