Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories as well as status registers. On the one hand, supply voltage scaling down to the near-threshold (near-VT) or even to the subthreshold (sub-VT) domain is a commonly used, efficient technique to reduce both leakage power and active energy dissipation. On the other hand, emerging CMOS-compatible device technologies such as Resistive Memories (ReRAMs) enable non-volatile, on-chip data storage and zero-leakage sleep periods. For the first time, we present and compare ReRAM-based Non-Volatile Flip-Flop (NVFF) topologies which are optimized for low-voltage operation (including near-VT and sub-VT operation). Three low-voltage NVFF circuit topologies are proposed and evaluated in terms of energy dissipation and reliability. Using topologies with two complementary programmed ReRAM devices, Monte Carlo simulations accounting for parametric variations confirm reliable data restore operation from the ReRAM devices at a sub- voltage as low as 400 mV. A topology using a single ReRAM device exhibits lower write energy, but requires a near- voltage for robust read. Energy characterization is performed at nominal, near-VT , and sub-VT supply voltages. The minimum energy point is reached for near-VT read operation with a total read+write energy of 735 fJ

Design considerations of a nonvolatile accumulator-based 8-bit processor

The rise of the Internet of Things (IoT) and theconstant growth of portable electronics have leveraged the con-cern with energy consumption. Nonvolatile memory (NVM)emerged as a solution to mitigate the problem due to its abilityto retain data on sleep mode without a power supply. Non-volatile processors (NVPs) may further improve energy savingby using nonvolatile flip-flops (NVFFs) to store system state,allowing the device to be turned off when idle and resume ex-ecution instantly after power-on. In view of the potential pre-sented by NVPs, this work describes the initial steps to imple-ment a nonvolatile version of Neander, a hypothetical processorcreated for educational purposes. First, we implemented Ne-ander in Register Transfer Level (RTL), separating the com-binational logic from the sequential elements. Then, the lat-ter was replaced by circuit-level descriptions of volatile flip-flops. We then validated this implementation by employinga mixed-signal simulation over a set of benchmarks. Resultshave shown the expected behavior for the whole instructionset. Then, we implemented circuit-level descriptions of mag-netic tunnel junction (MTJ) based nonvolatile flip-flops, usingan open-source MTJ model. These elements were exhaustivelyvalidated using electrical simulations. With these results, weintend to carry on the implementation and fully equip our pro-cessor with nonvolatile features such as instant wake-up

Configurable Operational Amplifier Architectures Based on Oxide Resistive RAMs

International audienceThis paper introduces memristor-based operational amplifiers in which semiconductor resistors are suppressed and replaced by memristors. The ability of the memristive elements to hold several resistance states is exploited to design programmable closed-loop operational amplifiers. An inverting operational amplifier, an integrator and a differentiator are studied. Such designs are developed based on a calibrated memristor model, and offer dynamic configurability to realize different gains and corner frequencies at reduced chip area

Memristors : a journey from material engineering to beyond Von-Neumann computing

Memristors are a promising building block to the next generation of computing systems. Since 2008, when the physical implementation of a memristor was first postulated, the scientific community has shown a growing interest in this emerging technology. Thus, many other memristive devices have been studied, exploring a large variety of materials and properties. Furthermore, in order to support the design of prac-tical applications, models in different abstract levels have been developed. In fact, a substantial effort has been devoted to the development of memristive based applications, which includes high-density nonvolatile memories, digital and analog circuits, as well as bio-inspired computing. In this context, this paper presents a survey, in hopes of summarizing the highlights of the literature in the last decade

Non-volatile FPGA architecture using resistive switching devices

This dissertation reports the research work that was conducted to propose a non-volatile architecture for FPGA using resistive switching devices. This is achieved by designing a Configurable Memristive Logic Block (CMLB). The CMLB comprises of memristive logic cells (MLC) interconnected to each other using memristive switch matrices. In the MLC, novel memristive D flip-flop (MDFF), 6-bit non-volatile look-up table (NVLUT), and CMOS-based multiplexers are used. Other than the MDFF, a non-volatile D-latch (NVDL) was also designed. The MDFF and the NVDL are proposed to replace CMOS-based D flip-flops and D-latches to improve energy consumption. The CMLB shows a reduction of 8.6% of device area and 1.094 times lesser critical path delay against the SRAM-based FPGA architecture. Against similar CMOS-based circuits, the MDFF provides switching speed of 1.08 times faster; the NVLUT reduces power consumption by 6.25nW and improves device area by 128 transistors; while the memristive logic cells reduce overall device area by 60.416μm2. The NVLUT is constructed using novel 2TG1M memory cells, which has the fastest switching times of 12.14ns, compared to other similar memristive memory cells. This is due to the usage of transmission gates which improves voltage transfer from input to the memristor. The novel 2TG1M memory cell also has lower energy consumption than the CMOS-based 6T SRAM cell. The memristive-based switch matrices that interconnects the MLCs together comprises of novel 7T1M SRAM cells, which has the lowest energy-delay-area-product value of 1.61 among other memristive SRAM cells. Two memristive logic gates (MLG) were also designed (OR and AND), that introduces non-volatility into conventional logic gates. All the above circuits and design simulations were performed on an enhanced SPICE memristor model, which was improved from a previously published memristor model. The previously published memristor model was fault to not be in good agreement with memristor theory and the physical model of memristors. Therefore, the enhanced SPICE memristor model provides a memristor model which is in good agreement with the memristor theory and the physical model of memristors, which is used throughout this research work

Non-volatile FPGA architecture using resistive switching devices

This dissertation reports the research work that was conducted to propose a non-volatile architecture for FPGA using resistive switching devices. This is achieved by designing a Configurable Memristive Logic Block (CMLB). The CMLB comprises of memristive logic cells (MLC) interconnected to each other using memristive switch matrices. In the MLC, novel memristive D flip-flop (MDFF), 6-bit non-volatile look-up table (NVLUT), and CMOS-based multiplexers are used. Other than the MDFF, a non-volatile D-latch (NVDL) was also designed. The MDFF and the NVDL are proposed to replace CMOS-based D flip-flops and D-latches to improve energy consumption. The CMLB shows a reduction of 8.6% of device area and 1.094 times lesser critical path delay against the SRAM-based FPGA architecture. Against similar CMOS-based circuits, the MDFF provides switching speed of 1.08 times faster; the NVLUT reduces power consumption by 6.25nW and improves device area by 128 transistors; while the memristive logic cells reduce overall device area by 60.416μm2. The NVLUT is constructed using novel 2TG1M memory cells, which has the fastest switching times of 12.14ns, compared to other similar memristive memory cells. This is due to the usage of transmission gates which improves voltage transfer from input to the memristor. The novel 2TG1M memory cell also has lower energy consumption than the CMOS-based 6T SRAM cell. The memristive-based switch matrices that interconnects the MLCs together comprises of novel 7T1M SRAM cells, which has the lowest energy-delay-area-product value of 1.61 among other memristive SRAM cells. Two memristive logic gates (MLG) were also designed (OR and AND), that introduces non-volatility into conventional logic gates. All the above circuits and design simulations were performed on an enhanced SPICE memristor model, which was improved from a previously published memristor model. The previously published memristor model was fault to not be in good agreement with memristor theory and the physical model of memristors. Therefore, the enhanced SPICE memristor model provides a memristor model which is in good agreement with the memristor theory and the physical model of memristors, which is used throughout this research work

A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells

In this work, we present an integrated read and programming circuit for Resistive Random Access Memory (RRAM) cells. Since there are a lot of different RRAM technologies in research and the process variations of this new memory technology often spread over a wide range of electrical properties, the proposed circuit focuses on versatility in order to be adaptable to different cell properties. The circuit is suitable for both read and programming operations based on voltage pulses of flexible length and height. The implemented read method is based on evaluating the voltage drop over a measurement resistor and can distinguish up to eight different states, which are coded in binary, thereby realizing a digitization of the analog memory value. The circuit was fabricated in the 130 nm CMOS process line of IHP. The simulations were done using a physics-based, multi-level RRAM model. The measurement results prove the functionality of the read circuit and the programming system and demonstrate that the read system can distinguish up to eight different states with an overall resistance ratio of 7.9

Memristor-Based Digital Systems Design and Architectures

Memristor is considered as a suitable alternative solution to resolve the scaling limitation of CMOS technology. In recent years, the use of memristors in circuits design has rapidly increased and attracted researcher’s interest. Advances have been made to both size and complexity of memristor designs. The development of CMOS transistors shows major concerns, such as, increased leakage power, reduced reliability, and high fabrication cost. These factors have affected chip manufacturing process and functionality severely. Therefore, the demand for new devices is increasing. Memristor, is considered as one of the key element in memory and information processing design due to its small size, long-term data storage, low power, and CMOS compatibility. The main objective in this research is to design memristor-based arithmetic circuits and to overcome some of the Memristor based logic design issues. In this thesis, a fast, low area and low power hybrid CMOS memristor based digital circuit design were implemented. Small and large-scale memristor based digital circuits are implemented and provided a solutions for overcoming the memristor degradation and fan-out challenges. As an example, a 4- bit LFSR has been implemented by using MRL scheme with 64 CMOS devices and 64 memristors. The proposed design is more efficient in terms of the area when compared with CMOS- based LFSR circuits. The simulation results proves the functionality of the design. This approach presents acceptable speed in comparison with CMOS-based design and it is faster than IMPLY-based memrisitive LFSR. The propped LFSR has 841 ps de-lay. Furthermore, the proposed design has a significant power reduction of over 66% less than CMOS-based approach. This thesis proposes implementation of memristive 2-D median filter and extends previously published works on memristive Filter design to include this emerging technology characteristics in image processing. The proposed circuit was designed based on Pt/TaOx/Ta redox-based device and Memristor Ratioed Logic (MRL). The proposed filter is designed in Cadence and the memristive median approved tested circuit is translated to Verilog-XL as a behavioral model. Different 512 _ 512 pixels input images contain salt and pepper noise with various noise density ratios are applied to the proposed median filter and the design successfully has substantially removed the noise. The implementation results in comparison with the conventional filters, it gives better Peak Signal to Noise Ratio (PSNR) and Mean Absolute Error (MAE) for different images with different noise density ratios while it saves more area as compared to CMOS-based design. This dissertation proposes a comprehensive framework for design, mapping and synthesis of large-scale memristor-CMOS circuits. This framework provides a synthesis approach that can be applied to all memristor-based digital logic designs. In particular, it is a proposal for a characterization methodology of memristor-based logic cells to generate a standard cell library for large scale simulation. The proposed framework is implemented in the Cadence Virtuoso schematic-level environment and was veri_ed with Verilog-XL, MATLAB, and the Electronic Design Automation (EDA) Synopses compiler after being translated to the behavioral level. The proposed method can be applied to implement any digital logic design. The frame work is deployed for design of the memristor-based parallel 8-bit adder/subtractor and a 2-D memristive-based median filter

Microarchitectures pour la sauvegarde incrémentale, robuste et efficace dans les systèmes à alimentation intermittente

Embedded devices powered with environmental energy harvesting, have to sustain computation while experiencing unexpected power failures.To preserve the progress across the power interruptions, Non-Volatile Memories (NVMs) are used to quickly save the state. This dissertation first presents an overview and comparison of different NVM technologies, based on different surveys from the literature. The second contribution we propose is a dedicated backup controller, called Freezer, that implements an on-demand incremental backup scheme. This can make the size of the backup 87.7% smaller then a full-memory backup strategy from the state of the art (SoA). Our third contribution addresses the problem of corruption of the state, due to interruptions during the backup process. Two algorithms are presented, that improve on the Freezer incremental backup process, making it robust to errors, by always guaranteeing the existence of a correct state, that can be restored in case of backup errors. These two algorithms can consume 23% less energy than the usual double-buffering technique used in the SoA. The fourth contribution, addresses the scalability of our proposed approach. Combining Freezer with Bloom filters, we introduce a backup scheme that can cover much larger address spaces, while achieving a backup size which is half the size of the regular Freezer approach.Les appareils embarqués alimentés par la récupération d'énergie environnementale doivent maintenir le calcul tout en subissant des pannes de courant inattendues. Pour préserver la progression à travers les interruptions de courant, des mémoires non volatiles (NVM) sont utilisées pour enregistrer rapidement l'état. Cette thèse présente d'abord une vue d'ensemble et une comparaison des différentes technologies NVM, basées sur différentes enquêtes de la littérature. La deuxième contribution que nous proposons est un contrôleur de sauvegarde dédié, appelé Freezer, qui implémente un schéma de sauvegarde incrémentale à la demande. Cela peut réduire la taille de la sauvegarde de 87,7% à celle d'une stratégie de sauvegarde à mémoire complète de l'état de l'art. Notre troisième contribution aborde le problème de la corruption de l'état, due aux interruptions pendant le processus de sauvegarde. Deux algorithmes sont présentés, qui améliorent le processus de sauvegarde incrémentale de Freezer, le rendant robuste aux erreurs, en garantissant toujours l'existence d'un état correct, qui peut être restauré en cas d'erreurs de sauvegarde. Ces deux algorithmes peuvent consommer $23\%$ d'énergie en moins que la technique de ``double-buffering'' utilisée dans l'état de l'art. La quatrième contribution porte sur l'évolutivité de notre approche proposée. En combinant Freezer avec des filtres Bloom, nous introduisons un schéma de sauvegarde qui peut couvrir des espaces d'adressage beaucoup plus grands, tout en obtenant une taille de sauvegarde qui est la moitié de la taille de l'approche Freezer habituelle