An Integrated Subharmonic Coupled-Oscillator Scheme for a 60-GHz Phased-Array Transmitter

This paper describes the design of an integrated coupled-oscillator array in SiGe for millimeter-wave applications. The design focuses on a scalable radio architecture where multiple dies are tiled to form larger arrays. A 2 × 2 oscillator array for a 60-GHz transmitter is fabricated with integrated power amplifiers and on-chip antennas. To lock between multiple dies, an injection-locking scheme appropriate for wire-bond interconnects is described. The 2 × 2 array demonstrates a 200–MHz locking range and 1 × 4 array formed by two adjacent chips has a 60-MHz locking range. The phase noise of the coupled oscillators is below 100 dBc/Hz at a 1-MHz offset when locked to an external reference. To the best of the authors’ knowledge, this is the highest frequency demonstration of coupled oscillators fabricated in a conventional silicon integrated-circuit process

LC-VCO design optimization methodology based on the gm/ID ratio for nanometer CMOS technologies

In this paper, an LC voltage-controlled oscillator (LC-VCO) design optimization methodology based on the gm/ID technique and on the exploration of all inversion regions of the MOS transistor (MOST) is presented. An in-depth study of the compromises between phase noise and current consumption permits optimization of the design for given specifications. Semiempirical models of MOSTs and inductors, obtained by simulation, jointly with analytical phase noise models, allow to get a design space map where the design tradeoffs are easily identified. Four LC-VCO designs in different inversion regions in a 90-nm CMOS process are obtained with the proposed methodology and verified with electrical simulations. Finally, the implementation and measurements are presented for a 2.4-GHz VCO operating in moderate inversion. The designed VCO draws 440 μA from a 1.2-V power supply and presents a phase noise of -106.2 dBc/Hz at 400 kHz from the carrier

Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature

Low power digitally controlled oscillator for IoT applications

This work is focused on the design of a Low Power CMOS DCO for IEEE 802.11ah in IoT applications. The design methodology is based on the Unified current-control model (UICM), which is a physics-based model and enables an accurate all-region model of the operation of the device. Additionally, a transformer-based resonator has been used to solve the low-quality factor issue of integrated inductors. Two digitally controlled oscillators (DCO) have been implemented to show the advantages of utilizing a transformedbased resonator and the methodology based on the UICM model. These designs aim for the operation in low voltage supply (VDD) since VDD scaling is a trend in systems-onchip (SoCs), in which the circuitry is mostly digital. Despite the degradation caused by VDD scaling, new RF and analog circuits must deliver similar performance of the older CMOS nodes. The first DCO design was a low power LC-tank DCO, implemented in 40nm bulk-CMOS. The first design presented a DCO operating at 45% of the nominal VDD without compromise the performance. By reducing the VDD below the nominal value, this DCO reduces power consumption, which is a crucial feature for IoT circuits. The main contribution of this first DCO is the reduction of VDD scaling impact on the phase-noise do the DCO. The LC-based DCO operates from 1.8 to 1.86 GHz. At the maximum frequency and 0.395V VDD, the power consumption is a mere 380 W with a phase-noise of -119.3 dBc/Hz at 1 MHz. The circuit occupies an area of 0.46mm2 in 40 nm CMOS, mostly due to the inductor. The second DCO design was a low-power transformer-based DCO design, implemented in 28nm bulk-CMOS. This second design aims for the VDD reduction to below 0.3 V. Operating in a frequency range similar to the LC-based DCO, the transformer-based DCO operated with 0.280V VDD with a power consumption of 97 W. Meanwhile, the phase-noise was -101.95 dBc/Hz at 1 MHz. Even in the worst-case scenario (i.e., slow-slow and 85oC), this second DCO was able to operate at 0.330V VDD, consuming 126 W, while it keeps a similar phase-noise performance of the typical case. The core circuit occupies an area of 0.364 mm2.Este trabalho objetiva o projeto de um DCO de baixa potência em CMOS para aplicações de IoT e aderentes ao padrão IEEE 802.11ah. A metodologia de projeto é baseada no modelo de controle de corrente unificado (UICM), que é um modelo com embasamento físico que permite uma operação precisa em todas as regiões de operação do dispositivo. Adicionalmente, é utilizado um ressonador baseado em transformador visando solucionar os problemas provenientes do baixo fator de qualidade de indutores integrados. Para destacar as melhorias obtidas com o projeto do ressonador baseado em transformador e com a metodologia baseada no modelo UICM, dois projetos de DCO são realizados. Esses projetos visam a operação com baixa tensão de alimentação (VDD), uma vez que o escalonamento do VDD é uma tendência em sistemas em chip (SoCs), em que o circuito é majoritariamente digital. Independente da degradação causada pelo escalonamento de VDD, circuitos analógicos e de RF atuais devem oferecer desempenho semelhante ao alcançado em tecnologias CMOS mais antigas. O primeiro projeto foi um DCO de baixa potência com tanque LC, implementado em tecnologia bulk-CMOS de 40nm. O primeiro projeto apresentou uma operação a 45% do VDD nominal sem comprometer o desempenho. Ao reduzir o VDD abaixo do valor nominal, este DCO reduz o consumo de energia, que é uma característica crucial para circuitos IoT. A principal contribuição deste DCO é a redução do impacto do escalonamento do VDD no ruído de fase. O DCO com tanque LC opera de 1,8 a 1,86 GHz. Na frequência máxima e com VDD de apenas 0,395V, o consumo de energia é 380 W e o ruído de fase é -119,3 dBc/Hz a 1 MHz. O circuito ocupa uma área de 0.46mm2 em processo CMOS de 40 nm. O segundo projeto foi um DCO de baixa potência baseado em transformador, implementado em tecnologia bulk- CMOS de 28nm. Este projeto visa a redução de VDD abaixo de 0,3 V. Operando em uma faixa de frequência semelhante ao primeiro DCO, o DCO baseado em transformador opera com VDD de 0,280V e com consumo de potência de 97 W. O ruído de fase foi de -101,95 dBc/Hz a 1 MHz. Mesmo no pior caso de processo, este DCO opera a um VDD de 0,330V, consumindo 126 W, com o ruído de fase semelhante ao caso típico. O circuito ocupa uma área de 0.364mm2

A CAD Tool for an Array of Differential Oscillators Coupled Through a Broadband Network

International audienceA new expression of the equations describing the locked states of two oscillators coupled through a resistor is presented in this article. This theory has led to the elaboration of a CAD tool which provides, in a short simulation time, the frequency locking region of two coupled differential oscillator

Design And Implementation Of Millimeter Wave Frequency Multiplier In 65Nm Rf Cmos Technology

In this thesis, the design and implementation of frequency multipliers in 65nm CMOS was explored for millimeter wave oscillators and optimized to achieve higher output power and better rejection of the fundamental frequency. Several types of frequency multipliers are discussed. Transformers for AC-coupling used in the frequency multipliers were also explored. The design and optimization of the circuits was performed using Sonnet, Cadence, and ADS software tools. In this work the design of a frequency multiplier which takes in a 12.5GHz signal and outputs 100GHz at the output is achieved. Three transformers are used for three stages of a frequency doubler to achieve a multiplication by eight. High isolation is achieved between the input frequency and the output. The output power level is –4dBm. The fundamental rejection is above 35dB. The power consumed by this frequency multiplier is 18mW. While multiplication of up to 4 is achieved in CMOS devices in other works, we are able to achieve a frequency multiplication of 8 in this work

Design And Implementation Of Millimeter Wave Frequency Multiplier In 65Nm Rf Cmos Technology

In this thesis, the design and implementation of frequency multipliers in 65nm CMOS was explored for millimeter wave oscillators and optimized to achieve higher output power and better rejection of the fundamental frequency. Several types of frequency multipliers are discussed. Transformers for AC-coupling used in the frequency multipliers were also explored. The design and optimization of the circuits was performed using Sonnet, Cadence, and ADS software tools. In this work the design of a frequency multiplier which takes in a 12.5GHz signal and outputs 100GHz at the output is achieved. Three transformers are used for three stages of a frequency doubler to achieve a multiplication by eight. High isolation is achieved between the input frequency and the output. The output power level is –4dBm. The fundamental rejection is above 35dB. The power consumed by this frequency multiplier is 18mW. While multiplication of up to 4 is achieved in CMOS devices in other works, we are able to achieve a frequency multiplication of 8 in this work

Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version