물리적 설계 자동화에서 표준셀 합성 및 최적화와 설계 품질 예측 방법론

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2023. 2. 김태환.In the physical design of chip implementation, designing high-quality standard cell layout and accurately predicting post-route DRV (design rule violation) at an early stage is an important problem, especially in advanced technology nodes. This dissertation presents two methodologies that can contribute to improving the design quality and design turnaround time of physical design flow. Firstly, we propose an integrated approach to the two problems of transistor folding and placement in standard cell layout synthesis. Precisely, we propose a globally optimal algorithm of search tree based design space exploration, devising a set of effective speeding up techniques as well as dynamic programming based fast cost computation. In addition, our algorithm incorporates the minimum oxide diffusion jog constraint, which closely relies on both of transistor folding and placement. Through experiments with the transistor netlists and design rules in advanced node, our proposed method is able to synthesize fully routable cell layouts of minimal size within a very fast time for each netlist, outperforming the cell layout quality in the manual design. Secondly, we propose a novel ML based DRC hotspot prediction technique, which is able to accurately capture the combined impact of pin accessibility and routing congestion on DRC hotspots. Precisely, we devise a graph, called pin proximity graph, that effectively models the spatial information on cell I/O pins and the information on pin-to-pin disturbance relation. Then, we propose a new ML model, which tightly combines GNN (graph neural network) and U-net in a way that GNN is used to embed pin accessibility information abstracted from our pin proximity graph while U-net is used to extract routing congestion information from grid-based features. Through experiments with a set of benchmark designs using advanced node, our model outperforms the existing ML models on all benchmark designs within the fast inference time in comparison with that of the state-of-the-art techniques.칩 구현의 물리적 설계 단계에서, 높은 성능의 표준 셀 설계와 배선 연결 이후 조기에 설계 규칙 위반을 정확히 예측하는 것은 최신 공정에서 특히 중요한 문제이다. 본 논문에서는 물리적 설계에서의 설계 품질과 총 설계 시간 향상을 달성할 수 있는 두 가지 방법론을 제안한다. 먼저, 본 논문에서는 표준 셀 레이아웃 합성에서 트랜지스터 폴딩과 배치를 종합적으로 진행할 수 있는 방법론을 논한다. 구체적으로 탐색 트리 기반의 최적화 알고리즘과 동적 프로그래밍 기반 빠른 비용 계산 방법과 여러 속도 개선 기법을 제안한다. 여기에 더해, 최신 공정에서 트랜지스터 폴딩과 배치로 인해 발생할 수 있는 최소 산화물 확산 영역 설계 규칙을 고려하였다. 최신 공정에 대한 표준 셀 합성 실험 결과, 본 논문에서 제안한 방법이 설계 전문가가 수동으로 설계한 것 대비 높은 성능을 보이고, 설계 시간도 매우 짧음을 보인다. 두번째로, 본 논문에서는 셀 배치 단계에서 핀 접근성과 연결 혼잡으로 인한 영향을 종합적으로 고려할 수 있는 머신 러닝 기반 설계 규칙 위반 구역 예측 방법론을 제안한다. 먼저 표준 셀의 입/출력 핀의 물리적 정보와 핀과 핀 사이 방해 관계를 효과적으로 표현할 수 있는 핀 근접 그래프를 제안하고, 그래프 신경망과 유넷 신경망을 효과적으로 결합한 새로운 형태의 머신 러닝 모델을 제안한다. 이 모델에서 그래프 신경망은 핀 근접 그래프로부터 핀 접근성 정보를 추출하고, 유넷 신경망은 격자 기반 특징으로부터 연결 혼잡 정보를 추출한다. 실험 결과 본 논문에서 제안한 방법은 이전 연구들 대비 더 빠른 예측 시간에 더 높은 예측 성능을 달성함을 보인다.1 Introduction 1 1.1 Standard Cell Layout Synthesis 1 1.2 Machine Learning for Electronic Design Automation 6 1.3 Prediction of Design Rule Violation 8 1.4 Contributions of This Dissertation 11 2 Standard Cell Layout Synthesis of Advanced Nodes with Simultaneous Transistor Folding and Placement 14 2.1 Motivations 14 2.2 Algorithm for Standard Cell Layout Synthesis 16 2.2.1 Problem Definition 16 2.2.2 Overall Flow 18 2.2.3 Step 1: Generation of Folding Shapes 18 2.2.4 Step 2: Search-tree Based Design Space Exploration 20 2.2.5 Speeding up Techniques 23 2.2.6 In-cell Routability Estimation 28 2.2.7 Step 3: In-cell Routing 30 2.2.8 Step 4: Splitting Folding Shapes 35 2.2.9 Step 5: Relaxing Minimum-area Constraints 37 2.3 Experimental Results 38 2.3.1 Comparison with ASAP 7nm Cell Layouts 40 2.3.2 Effectiveness of Dynamic Folding 42 2.3.3 Effectiveness of Speeding Up Techniques 43 2.3.4 Impact of Splitting Folding Shape 48 2.3.5 Runtime Analysis According to Area Relaxation 51 2.3.6 Comparison with Previous Works 52 3 Pin Accessibility and Routing Congestion Aware DRC Hotspot Prediction using Graph Neural Network and U-Net 54 3.1 Preliminary 54 3.1.1 Graph Neural Network 54 3.1.2 Fully Convolutional Network 56 3.2 Proposed Prediction Methodology 57 3.2.1 Overall Flow 57 3.2.2 Pin Proximity Graph 58 3.2.3 Grid-based Features 61 3.2.4 Overall Architecture of PGNN 64 3.2.5 GNN Architecture in PGNN 64 3.2.6 U-net Architecture in PGNN 66 3.2.7 Final Prediction in PGNN 66 3.3 Experimental Results 68 3.3.1 Experimental Setup 68 3.3.2 Analysis on PGNN Performance 71 3.3.3 Comparison with Previous Works 72 3.3.4 Adaptation to Real-world Designs 81 3.3.5 Handling Data Imbalance Problem in Regression Model 86 4 Conclusions 92 4.1 Chapter 2 92 4.2 Chapter 3 93박

Integrated Circuits Parasitic Capacitance Extraction Using Machine Learning and its Application to Layout Optimization

The impact of parasitic elements on the overall circuit performance keeps increasing from one technology generation to the next. In advanced process nodes, the parasitic effects dominate the overall circuit performance. As a result, the accuracy requirements of parasitic extraction processes significantly increased, especially for parasitic capacitance extraction. Existing parasitic capacitance extraction tools face many challenges to cope with such new accuracy requirements that are set by semiconductor foundries (\u3c 5% error). Although field-solver methods can meet such requirements, they are very slow and have a limited capacity. The other alternative is the rule-based parasitic capacitance extraction methods, which are faster and have a high capacity; however, they cannot consistently provide good accuracy as they use a pre-characterized library of capacitance formulas that cover a limited number of layout patterns. On the other hand, the new parasitic extraction accuracy requirements also added more challenges on existing parasitic-aware routing optimization methods, where simplified parasitic models are used to optimize layouts. This dissertation provides new solutions for interconnect parasitic capacitance extraction and parasitic-aware routing optimization methodologies in order to cope with the new accuracy requirements of advanced process nodes as follows. First, machine learning compact models are developed in rule-based extractors to predict parasitic capacitances of cross-section layout patterns efficiently. The developed models mitigate the problems of the pre-characterized library approach, where each compact model is designed to extract parasitic capacitances of cross-sections of arbitrary distributed metal polygons that belong to a specific set of metal layers (i.e., layer combination) efficiently. Therefore, the number of covered layout patterns significantly increased. Second, machine learning compact models are developed to predict parasitic capacitances of middle-end-of-line (MEOL) layers around FINFETs and MOSFETs. Each compact model extracts parasitic capacitances of 3D MEOL patterns of a specific device type regardless of its metal polygons distribution. Therefore, the developed MEOL models can replace field-solvers in extracting MEOL patterns. Third, a novel accuracy-based hybrid parasitic capacitance extraction method is developed. The proposed hybrid flow divides a layout into windows and extracts the parasitic capacitances of each window using one of three parasitic capacitance extraction methods that include: 1) rule-based; 2) novel deep-neural-networks-based; and 3) field-solver methods. This hybrid methodology uses neural-networks classifiers to determine an appropriate extraction method for each window. Moreover, as an intermediate parasitic capacitance extraction method between rule-based and field-solver methods, a novel deep-neural-networks-based extraction method is developed. This intermediate level of accuracy and speed is needed since using only rule-based and field-solver methods (for hybrid extraction) results in using field-solver most of the time for any required high accuracy extraction. Eventually, a parasitic-aware layout routing optimization and analysis methodology is implemented based on an incremental parasitic extraction and a fast optimization methodology. Unlike existing flows that do not provide a mechanism to analyze the impact of modifying layout geometries on a circuit performance, the proposed methodology provides novel sensitivity circuit models to analyze the integrity of signals in layout routes. Such circuit models are based on an accurate matrix circuit representation, a cost function, and an accurate parasitic sensitivity extraction. The circuit models identify critical parasitic elements along with the corresponding layout geometries in a certain route, where they measure the sensitivity of a route’s performance to corresponding layout geometries very fast. Moreover, the proposed methodology uses a nonlinear programming technique to optimize problematic routes with pre-determined degrees of freedom using the proposed circuit models. Furthermore, it uses a novel incremental parasitic extraction method to extract parasitic elements of modified geometries efficiently, where the incremental extraction is used as a part of the routing optimization process to improve the optimization runtime and increase the optimization accuracy

Algorithms for Cell Layout

Cell layout is a critical step in the design process of computer chips. A cell is a logic function or storage element implemented in CMOS technology by transistors connected with wires. As each cell is used many times on a chip, improvements of a single cell layout can have a large effect on the overall chip performance. In the past years increasing difficulty to manufacture small feature sizes has lead to growing complexity of design rules. Producing cell layouts which are compliant with design rules and at the same time optimized w.r.t. layout size has become a difficult task for human experts. In this thesis we present BonnCell, a cell layout generator which is able to fully automatically produce design rule compliant layouts. It is able to guarantee area minimality of its layouts for small and medium sized cells. For large cells it uses a heuristic which produces layouts with a significant area reduction compared to those created manually. The routing problem is based on the Vertex Disjoint Steiner Tree Packing Problem with a large number of additional design rules. In Chapter 4 we present the routing algorithm which is based on a mixed integer programming (MIP) formulation that guarantees compliance with all design rules. The algorithm can also handle instances in which only part of the transistors are placed to check whether this partial placement can be extended to a routable placement of all transistors. Chapter 5 contains the transistor placement algorithm. Based on a branch and bound approach, it places transistors in turn and achieves efficiency by pruning parts of the search tree which do not contain optimum solutions. One major contribution of this thesis is that BonnCell only outputs routable placements. Simply checking the routability for each full placement in the search tree is too slow in practice, therefore several speedup strategies are applied. Some cells are too large to be solved by a single call of the placement algorithm. In Chapter 7 we describe how these cells are split up into smaller subcells which are placed and routed individually and subsequently merged into a placement and routing of the original cell. Two approaches for dividing the original cell into subcells are presented, one based on estimating the subcell area and the other based on solving the Min Cut Linear Arrangement Problem. BonnCell has enabled our cooperation partner IBM to drastically improve their cell design and layout process. In particular, a team of human experts needed several weeks to find a layout for their largest cell, consisting of 128 transistors. BonnCell processed this cell without manual intervention in 3 days and its layout uses 15% less area than the layout found by the human experts

Multi-Threshold Low Power-Delay Product Memory and Datapath Components Utilizing Advanced FinFET Technology Emphasizing the Reliability and Robustness

Indiana University-Purdue University Indianapolis (IUPUI)In this thesis, we investigated the 7 nm FinFET technology for its delay-power product performance. In our study, we explored the ASAP7 library from Arizona State University, developed in collaboration with ARM Holdings. The FinFET technology was chosen since it has a subthreshold slope of 60mV/decade that enables cells to function at 0.7V supply voltage at the nominal corner. An emphasis was focused on characterizing the Non-Ideal effects, delay variation, and power for the FinFET device. An exhaustive analysis of the INVx1 delay variation for different operating conditions was also included, to assess the robustness. The 7nm FinFET device was then employed into 6T SRAM cells and 16 function ALU. The SRAM cells were approached with advanced multi-corner stability evaluation. The system-level architecture of the ALU has demonstrated an ultra-low power system operating at 1 GHz clock frequency

Design for Reliability and Low Power in Emerging Technologies

Die fortlaufende Verkleinerung von Transistor-Strukturgrößen ist einer der wichtigsten Antreiber für das Wachstum in der Halbleitertechnologiebranche. Seit Jahrzehnten erhöhen sich sowohl Integrationsdichte als auch Komplexität von Schaltkreisen und zeigen damit einen fortlaufenden Trend, der sich über alle modernen Fertigungsgrößen erstreckt. Bislang ging das Verkleinern von Transistoren mit einer Verringerung der Versorgungsspannung einher, was zu einer Reduktion der Leistungsaufnahme führte und damit eine gleichbleibenden Leistungsdichte sicherstellte. Doch mit dem Beginn von Strukturgrößen im Nanometerbreich verlangsamte sich die fortlaufende Skalierung. Viele Schwierigkeiten, sowie das Erreichen von physikalischen Grenzen in der Fertigung und Nicht-Idealitäten beim Skalieren der Versorgungsspannung, führten zu einer Zunahme der Leistungsdichte und, damit einhergehend, zu erschwerten Problemen bei der Sicherstellung der Zuverlässigkeit. Dazu zählen, unter anderem, Alterungseffekte in Transistoren sowie übermäßige Hitzeentwicklung, nicht zuletzt durch stärkeres Auftreten von Selbsterhitzungseffekten innerhalb der Transistoren. Damit solche Probleme die Zuverlässigkeit eines Schaltkreises nicht gefährden, werden die internen Signallaufzeiten üblicherweise sehr pessimistisch kalkuliert. Durch den so entstandenen zeitlichen Sicherheitsabstand wird die korrekte Funktionalität des Schaltkreises sichergestellt, allerdings auf Kosten der Performance. Alternativ kann die Zuverlässigkeit des Schaltkreises auch durch andere Techniken erhöht werden, wie zum Beispiel durch Null-Temperatur-Koeffizienten oder Approximate Computing. Wenngleich diese Techniken einen Großteil des üblichen zeitlichen Sicherheitsabstandes einsparen können, bergen sie dennoch weitere Konsequenzen und Kompromisse. Bleibende Herausforderungen bei der Skalierung von CMOS Technologien führen außerdem zu einem verstärkten Fokus auf vielversprechende Zukunftstechnologien. Ein Beispiel dafür ist der Negative Capacitance Field-Effect Transistor (NCFET), der eine beachtenswerte Leistungssteigerung gegenüber herkömmlichen FinFET Transistoren aufweist und diese in Zukunft ersetzen könnte. Des Weiteren setzen Entwickler von Schaltkreisen vermehrt auf komplexe, parallele Strukturen statt auf höhere Taktfrequenzen. Diese komplexen Modelle benötigen moderne Power-Management Techniken in allen Aspekten des Designs. Mit dem Auftreten von neuartigen Transistortechnologien (wie zum Beispiel NCFET) müssen diese Power-Management Techniken neu bewertet werden, da sich Abhängigkeiten und Verhältnismäßigkeiten ändern. Diese Arbeit präsentiert neue Herangehensweisen, sowohl zur Analyse als auch zur Modellierung der Zuverlässigkeit von Schaltkreisen, um zuvor genannte Herausforderungen auf mehreren Designebenen anzugehen. Diese Herangehensweisen unterteilen sich in konventionelle Techniken ((a), (b), (c) und (d)) und unkonventionelle Techniken ((e) und (f)), wie folgt: $\textbf{(a)}$ Analyse von Leistungszunahmen in Zusammenhang mit der Maximierung von Leistungseffizienz beim Betrieb nahe der Transistor Schwellspannung, insbesondere am optimalen Leistungspunkt. Das genaue Ermitteln eines solchen optimalen Leistungspunkts ist eine besondere Herausforderung bei Multicore Designs, da dieser sich mit den jeweiligen Optimierungszielsetzungen und der Arbeitsbelastung verschiebt. $\textbf{(b)}$ Aufzeigen versteckter Interdependenzen zwischen Alterungseffekten bei Transistoren und Schwankungen in der Versorgungsspannung durch „IR-drops“. Eine neuartige Technik wird vorgestellt, die sowohl Über- als auch Unterschätzungen bei der Ermittlung des zeitlichen Sicherheitsabstands vermeidet und folglich den kleinsten, dennoch ausreichenden Sicherheitsabstand ermittelt. $\textbf{(c)}$ Eindämmung von Alterungseffekten bei Transistoren durch „Graceful Approximation“, eine Technik zur Erhöhung der Taktfrequenz bei Bedarf. Der durch Alterungseffekte bedingte zeitlich Sicherheitsabstand wird durch Approximate Computing Techniken ersetzt. Des Weiteren wird Quantisierung verwendet um ausreichend Genauigkeit bei den Berechnungen zu gewährleisten. $\textbf{(d)}$ Eindämmung von temperaturabhängigen Verschlechterungen der Signallaufzeit durch den Betrieb nahe des Null-Temperatur Koeffizienten (N-ZTC). Der Betrieb bei N-ZTC minimiert temperaturbedingte Abweichungen der Performance und der Leistungsaufnahme. Qualitative und quantitative Vergleiche gegenüber dem traditionellen zeitlichen Sicherheitsabstand werden präsentiert. $\textbf{(e)}$ Modellierung von Power-Management Techniken für NCFET-basierte Prozessoren. Die NCFET Technologie hat einzigartige Eigenschaften, durch die herkömmliche Verfahren zur Spannungs- und Frequenzskalierungen zur Laufzeit (DVS/DVFS) suboptimale Ergebnisse erzielen. Dies erfordert NCFET-spezifische Power-Management Techniken, die in dieser Arbeit vorgestellt werden. $\textbf{(f)}$ Vorstellung eines neuartigen heterogenen Multicore Designs in NCFET Technologie. Das Design beinhaltet identische Kerne; Heterogenität entsteht durch die Anwendung der individuellen, optimalen Konfiguration der Kerne. Amdahls Gesetz wird erweitert, um neue system- und anwendungsspezifische Parameter abzudecken und die Vorzüge des neuen Designs aufzuzeigen. Die Auswertungen der vorgestellten Techniken werden mithilfe von Implementierungen und Simulationen auf Schaltkreisebene (gate-level) durchgeführt. Des Weiteren werden Simulatoren auf Systemebene (system-level) verwendet, um Multicore Designs zu implementieren und zu simulieren. Zur Validierung und Bewertung der Effektivität gegenüber dem Stand der Technik werden analytische, gate-level und system-level Simulationen herangezogen, die sowohl synthetische als auch reale Anwendungen betrachten

Improved Physical Design for Manufacturing Awareness and Advanced VLSI

Increasing challenges arise with each new semiconductor technology node, especially in advanced nodes, where the industry tries to extract every ounce of benefit as it approaches the limits of physics, through manufacturing-aware design technology co-optimization and design-based equivalent scaling. The increasing complexity of design and process technologies, and ever-more complex design rules, also become hurdles for academic researchers, separating academic researchers from the most up-to-date technical issues.This thesis presents innovative methodologies and optimizations to address the above challenges. There are three directions in this thesis: (i) manufacturing-aware design technology co-optimization; (ii) advanced node design-based equivalent scaling; and (iii) an open source academic detailed routing flow.To realize manufacturing-aware design technology co-optimization, this thesis presents two works: (i) a multi-row detailed placement optimization for neighbor diffusion effect mitigation between neighboring standard cells; and (ii) a post-routing optimization to generate 2D block mask layout for dummy segment removal in self-aligned multiple patterning.To achieve advanced node design-based equivalent scaling, this thesis presents two improved physical design methodologies: (i) a post-placement flop tray generation approach for clock power reduction; and (ii) a detailed placement approach to exploit inter-row M1 routing for congestion and wirelength reduction.To address the increasing gap between academia and industry, this thesis presents two works toward an open source academic detailed routing flow: (i) a complete, robust, scalable and design ruleaware dynamic programming-based pin access analysis framework; and (ii) TritonRoute – the open source detailed router that is capable of delivering DRC-clean detailed routing solutions in advanced nodes.This thesis concludes with a summary of its contributions and open directions for future research

Ko-Optimasi Source dan Pola Mask Berdasarkan Algoritma Multi-Objektif Particle Swarm Optimization

Studi ini mengintegrasikan algoritma multi-objektif particle swarm optimization (MOPSO) kedalam proses ko-optimasi source dan mask (SMO) untuk meningkatkan performa lithografi pada sinar ekstrim ultraviolet (EUV). Sebuah metode proses secara simultan dari source dan pola reticle dikembangkan pada riset ini. Untuk konstruksi source berbentuk bebas (freeform) , sebuah optimasi berbasis pixel digunakan pada platform PC. Algoritma MOPSO digunakan untuk menghasilkan source berbentuk bebas (Source Freform). Model berbasis pendekatan koreksi optik (Optical Proximity Correction or OPC) digunakan untuk mengoreksi pola dari mask layout. Dengan mempertimbangkan karakteristik dari sistem lithografi EUV, metode SMO dikembangkan dengan algoritma MOPSO menggunakan dua fungsi tujuan: error (EPE) dan bias horizontal/vertikal. Sebuah pola satu-dimensi line/space (L/S) digunakan sebagai informasi dasar untuk menguji Pareto dari algoritma SMO. Kemudian, pola 2D dengan half-pitch 22-nm diuji menggunakan algoritma yang sama. Algoritma MOPSO berhasil untuk mengkonstruksi solusi non-dominan (non-dominated) dari source Freeform dan Pareto. Indikator performa menunjukkan kondisi process windows (PW) seperti aerial image, exposure latitutde (EL), depth of focus (DOF) dan bias. Algoritma menunjukan bahwa PW meningkat untuk EL namun DOF menunjukkan penurunan. EL meningkat sebesar 5.26% dan DOF menurun sebesar 11.34% untuk 1D L/S. EL dan DOF meningkat 43.6% dan 18.11% untuk pola 2D. ========================================================================================================= This thesis integrates multi-objective particle swarm optimization (MOPSO) algorithm into the source and mask co - optimization (SMO) process to enhance the extreme ultraviolet (EUV) lithography imaging performance. A simultaneous source and reticle pattern process method is developed in this research. For the freeform source construction, a pixelated - based optimiz ation process was performed on PC platform. The MOPSO algorithm was applied to generate freeform source. Model - based optical proximity correction (OPC) was applied to correct the mask layout patterns. Considering the characteristics of the EUV lithography system, the developed SMO with the MOPSO algorithm is constrained by two cost functions: the edge placement error (EPE) and horizontal/vertical bias. A one - dimensional line/space (L/S) pattern is used as the baseline information to test the Pareto behavior of the developed SMO algorithm. Then, the 2D pattern with half - pitch 22 - nm was assessed using the developed algorithm. The proposed MOPSO algorithm succeeded to construct non - dominated solutions of freeform sources and Pareto front which four of those sol utions are presented. The performance indicators include process windows (PW) condition such as the aerial image contrast, exposure latitude (EL), depth of focus (DOF), and bias errors. The proposed algorithm shows that the common PW conditions improved on EL while the DOF is slightly suffering. The EL increased for 5.26% and DOF suffers for 11.34% in 1D L/S and both EL and DOF increased for 43.6% and 18.11%, respectively for the 2D pattern

Algorithmic techniques for physical design : macro placement and under-the-cell routing

With the increase of chip component density and new manufacturability constraints imposed by modern technology nodes, the role of algorithms for electronic design automation is key to the successful implementation of integrated circuits. Two of the critical steps in the physical design flows are macro placement and ensuring all design rules are honored after timing closure. This thesis proposes contributions to help in these stages, easing time-consuming manual steps and helping physical design engineers to obtain better layouts in reduced turnaround time. The first contribution is under-the-cell routing, a proposal to systematically connect standard cell components via lateral pins in the lower metal layers. The aim is to reduce congestion in the upper metal layers caused by extra metal and vias, decreasing the number of design rule violations. To allow cells to connect by abutment, a standard cell library is enriched with instances containing lateral pins in a pre-selected sharing track. Algorithms are proposed to maximize the numbers of connections via lateral connection by mapping placed cell instances to layouts with lateral pins, and proposing local placement modifications to increase the opportunities for such connections. Experimental results show a significant decrease in the number of pins, vias, and in number of design rule violations, with negligible impact on wirelength and timing. The second contribution, done in collaboration with eSilicon (a leading ASIC design company), is the creation of HiDaP, a macro placement tool for modern industrial designs. The proposed approach follows a multilevel scheme to floorplan hierarchical blocks, composed of macros and standard cells. By exploiting RTL information available in the netlist, the dataflow affinity between these blocks is modeled and minimized to find a macro placement with good wirelength and timing properties. The approach is further extended to allow additional engineer input, such as preferred macro locations, and also spectral and force methods to guide the floorplanning search. Experimental results show that the layouts generated by HiDaP outperforms those obtained by a state-of-the-art EDA physical design software, with similar wirelength and better timing when compared to manually designed tape-out ready macro placements. Layouts obtained by HiDaP have successfully been brought to near timing closure with one to two rounds of small modifications by physical design engineers. HiDaP has been fully integrated in the design flows of the company and its development remains an ongoing effort.A causa de l'increment de la densitat de components en els xip i les noves restriccions de disseny imposades pels últims nodes de fabricació, el rol de l'algorísmia en l'automatització del disseny electrònic ha esdevingut clau per poder implementar circuits integrats. Dos dels passos crucials en el procés de disseny físic és el placement de macros i assegurar la correcció de les regles de disseny un cop les restriccions de timing del circuit són satisfetes. Aquesta tesi proposa contribucions per ajudar en aquests dos reptes, facilitant laboriosos passos manuals en el procés i ajudant als enginyers de disseny físic a obtenir millors resultats en menys temps. La primera contribució és el routing "under-the-cell", una proposta per connectar cel·les estàndard usant pins laterals en les capes de metall inferior de manera sistemàtica. L'objectiu és reduir la congestió en les capes de metall superior causades per l'ús de metall i vies, i així disminuir el nombre de violacions de regles de disseny. Per permetre la connexió lateral de cel·les, estenem una llibreria de cel·les estàndard amb dissenys que incorporen connexions laterals. També proposem modificacions locals al placement per permetre explotar aquest tipus de connexions més sovint. Els resultats experimentals mostren una reducció significativa en el nombre de pins, vies i nombre de violacions de regles de disseny, amb un impacte negligible en wirelength i timing. La segona contribució, desenvolupada en col·laboració amb eSilicon (una empresa capdavantera en disseny ASIC), és el desenvolupament de HiDaP, una eina de macro placement per a dissenys industrials actuals. La proposta segueix un procés multinivell per fer el floorplan de blocks jeràrquics, formats per macros i cel·les estàndard. Mitjançant la informació RTL disponible en la netlist, l'afinitat de dataflow entre els mòduls es modela i minimitza per trobar macro placements amb bones propietats de wirelength i timing. La proposta també incorpora la possibilitat de rebre input addicional de l'enginyer, com ara suggeriments de les posicions de les macros. Finalment, també usa mètodes espectrals i de forçes per guiar la cerca de floorplans. Els resultats experimentals mostren que els dissenys generats amb HiDaP són millors que els obtinguts per eines comercials capdavanteres de EDA. Els resultats també mostren que els dissenys presentats poden obtenir un wirelength similar i millor timing que macro placements obtinguts manualment, usats per fabricació. Alguns dissenys obtinguts per HiDaP s'han dut fins a timing-closure en una o dues rondes de modificacions incrementals per part d'enginyers de disseny físic. L'eina s'ha integrat en el procés de disseny de eSilicon i el seu desenvolupament continua més enllà de les aportacions a aquesta tesi.Postprint (published version