STT-RAM을 이용한 에너지 효율적인 캐시 설계 기술

학위논문 (박사)-- 서울대학교 대학원 : 공과대학 전기·컴퓨터공학부, 2019. 2. 최기영.지난 수십 년간 '메모리 벽' 문제를 해결하기 위해 온 칩 캐시의 크기는 꾸준히 증가해왔다. 하지만 지금까지 캐시에 주로 사용되어 온 메모리 기술인 SRAM은 낮은 집적도와 높은 대기 전력 소모로 인해 큰 캐시를 구성하는 데에는 적합하지 않다. 이러한 SRAM의 단점을 보완하기 위해 더 높은 집적도와 낮은 대기 전력을 소모하는 새로운 메모리 기술인 STT-RAM으로 SRAM을 대체하는 것이 제안되었다. 하지만 STT-RAM은 데이터를 쓸 때 많은 에너지와 시간을 소비하기 때문에 단순히 SRAM을 STT-RAM으로 대체하는 것은 오히려 캐시 에너지 소비를 증가시킨다. 이러한 문제를 해결하기 위해 본 논문에서는 STT-RAM을 이용한 에너지 효율적인 캐시 설계 기술들을 제안한다. 첫 번째, 배타적 캐시 계층 구조에서 STT-RAM을 활용하는 방법을 제안하였다. 배타적 캐시 계층 구조는 계층 간에 중복된 데이터가 없기 때문에 포함적 캐시 계층 구조와 비교하여 더 큰 유효 용량을 갖지만, 배타적 캐시 계층 구조에서는 상위 레벨 캐시에서 내보내진 모든 데이터를 하위 레벨 캐시에 써야 하므로 더 많은 양의 데이터를 쓰게 된다. 이러한 배타적 캐시 계층 구조의 특성은 쓰기 특성이 단점인 STT-RAM을 함께 활용하는 것을 어렵게 한다. 이를 해결하기 위해 본 논문에서는 재사용 거리 예측을 기반으로 하는 SRAM/STT-RAM 하이브리드 캐시 구조를 설계하였다. 두 번째, 비휘발성 STT-RAM을 이용해 캐시를 설계할 때 고려해야 할 점들에 대해 분석하였다. STT-RAM의 비효율적인 쓰기 동작을 줄이기 위해 다양한 해결법들이 제안되었다. 그중 한 가지는 STT-RAM 소자가 데이터를 유지하는 시간을 줄여 (휘발성 STT-RAM) 쓰기 특성을 향상하는 방법이다. STT-RAM에 저장된 데이터를 잃는 것은 확률적으로 발생하기 때문에 저장된 데이터를 안정적으로 유지하기 위해서는 오류 정정 부호(ECC)를 이용해 주기적으로 오류를 정정해주어야 한다. 본 논문에서는 STT-RAM 모델을 이용하여 휘발성 STT-RAM 설계 요소들에 대해 분석하였고 실험을 통해 해당 설계 요소들이 캐시 에너지와 성능에 주는 영향을 보여주었다. 마지막으로, 매니코어 시스템에서의 분산 하이브리드 캐시 구조를 설계하였다. 단순히 기존의 하이브리드 캐시와 분산캐시를 결합하면 하이브리드 캐시의 효율성에 큰 영향을 주는 SRAM 활용도가 낮아진다. 따라서 기존의 하이브리드 캐시 구조에서의 에너지 감소를 기대할 수 없다. 본 논문에서는 분산 하이브리드 캐시 구조에서 SRAM 활용도를 높일 수 있는 두 가지 최적화 기술인 뱅크-내부 최적화와 뱅크간 최적화 기술을 제안하였다. 뱅크-내부 최적화는 highly-associative 캐시를 활용하여 뱅크 내부에서 쓰기 동작이 많은 데이터를 분산시키는 것이고 뱅크간 최적화는 서로 다른 캐시 뱅크에 쓰기 동작이 많은 데이터를 고르게 분산시키는 최적화 방법이다.Over the last decade, the capacity of on-chip cache is continuously increased to mitigate the memory wall problem. However, SRAM, which is a dominant memory technology for caches, is not suitable for such a large cache because of its low density and large static power. One way to mitigate these downsides of the SRAM cache is replacing SRAM with a more efficient memory technology. Spin-Transfer Torque RAM (STT-RAM), one of the emerging memory technology, is a promising candidate for the alternative of SRAM. As a substitute of SRAM, STT-RAM can compensate drawbacks of SRAM with its non-volatility and small cell size. However, STT-RAM has poor write characteristics such as high write energy and long write latency and thus simply replacing SRAM to STT-RAM increases cache energy. To overcome those poor write characteristics of STT-RAM, this dissertation explores three different design techniques for energy-efficient cache using STT-RAM. The first part of the dissertation focuses on combining STT-RAM with exclusive cache hierarchy. Exclusive caches are known to provide higher effective cache capacity than inclusive caches by removing duplicated copies of cache blocks across hierarchies. However, in exclusive cache hierarchies, every block evicted from the upper-level cache is written back to the last-level cache regardless of its dirtiness thereby incurring extra write overhead. This makes it challenging to use STT-RAM for exclusive last-level caches due to its high write energy and long write latency. To mitigate this problem, we design an SRAM/STT-RAM hybrid cache architecture based on reuse distance prediction. The second part of the dissertation explores trade-offs in the design of volatile STT-RAM cache. Due to the inefficient write operation of STT-RAM, various solutions have been proposed to tackle this inefficiency. One of the proposed solutions is redesigning STT-RAM cell for better write characteristics at the cost of shortened retention time (i.e., volatile STT-RAM). Since the retention failure of STT-RAM has a stochastic property, an extra overhead of periodic scrubbing with error correcting code (ECC) is required to tolerate the failure. With an analysis based on analytic STT-RAM model, we have conducted extensive experiments on various volatile STT-RAM cache design parameters including scrubbing period, ECC strength, and target failure rate. The experimental results show the impact of the parameter variations on last-level cache energy and performance and provide a guideline for designing a volatile STT-RAM with ECC and scrubbing. The last part of the dissertation proposes Benzene, an energy-efficient distributed SRAM/STT-RAM hybrid cache architecture for manycore systems running multiple applications. It is based on the observation that a naive application of hybrid cache techniques to distributed caches in a manycore architecture suffers from limited energy reduction due to uneven utilization of scarce SRAM. We propose two-level optimization techniques: intra-bank and inter-bank. Intra-bank optimization leverages highly-associative cache design, achieving more uniform distribution of writes within a bank. Inter-bank optimization evenly balances the amount of write-intensive data across the banks.Abstract i Contents iii List of Figures vii List of Tables xi Chapter 1 Introduction 1 1.1 Exclusive Last-Level Hybrid Cache 2 1.2 Designing Volatile STT-RAM Cache 4 1.3 Distributed Hybrid Cache 5 Chapter 2 Background 9 2.1 STT-RAM 9 2.1.1 Thermal Stability 10 2.1.2 Read and Write Operation of STT-RAM 11 2.1.3 Failures of STT-RAM 11 2.1.4 Volatile STT-RAM 13 2.1.5 Related Work 14 2.2 Exclusive Last-Level Hybrid Cache 18 2.2.1 Cache Hierarchies 18 2.2.2 Related Work 19 2.3 Distributed Hybrid Cache 21 2.3.1 Prediction Hybrid Cache 21 2.3.2 Distributed Cache Partitioning 22 2.3.3 Related Work 23 Chapter 3 Exclusive Last-Level Hybrid Cache 27 3.1 Motivation 27 3.1.1 Exclusive Cache Hierarchy 27 3.1.2 Reuse Distance 29 3.2 Architecture 30 3.2.1 Reuse Distance Predictor 30 3.2.2 Hybrid Cache Architecture 32 3.3 Evaluation 34 3.3.1 Methodology 34 3.3.2 LLC Energy Consumption 35 3.3.3 Main Memory Energy Consumption 38 3.3.4 Performance 39 3.3.5 Area Overhead 39 3.4 Summary 39 Chapter 4 Designing Volatile STT-RAM Cache 41 4.1 Analysis 41 4.1.1 Retention Failure of a Volatile STT-RAM Cell 41 4.1.2 Memory Array Design 43 4.2 Evaluation 45 4.2.1 Methodology 45 4.2.2 Last-Level Cache Energy 46 4.2.3 Performance 51 4.3 Summary 52 Chapter 5 Distributed Hybrid Cache 55 5.1 Motivation 55 5.2 Architecture 58 5.2.1 Intra-Bank Optimization 59 5.2.2 Inter-Bank Optimization 63 5.2.3 Other Optimizations 67 5.3 Evaluation Methodology 69 5.4 Evaluation Results 73 5.4.1 Energy Consumption and Performance 73 5.4.2 Analysis of Intra-bank Optimization 76 5.4.3 Analysis of Inter-bank Optimization 78 5.4.4 Impact of Inter-Bank Optimization on Network Energy 79 5.4.5 Sensitivity Analysis 80 5.4.6 Implementation Overhead 81 5.5 Summary 82 Chapter 6 Conculsion 85 Bibliography 88 초록 101Docto

A Study on Performance and Power Efficiency of Dense Non-Volatile Caches in Multi-Core Systems

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the asymmetric nature of the MLC storage scheme to build cache lines featuring heterogeneous performances, that is, half of the cache lines are read-friendly, while the other is write-friendly. Furthermore, we propose to opportunistically deactivate ways in underutilized sets to convert MLC to Single-Level Cell (SLC) mode, which features overall better performance and lifetime. Our ultimate goal is to build a cache architecture that combines the capacity advantages of MLC and performance/energy advantages of SLC. Our experiments show an improvement of 43% in total numbers of conflict misses, 27% in memory access latency, 12% in system performance, and 26% in LLC access energy, with a slight degradation in cache lifetime (about 7%) compared to an SLC cache

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Energy-Aware Data Movement In Non-Volatile Memory Hierarchies

While technology scaling enables increased density for memory cells, the intrinsic high leakage power of conventional CMOS technology and the demand for reduced energy consumption inspires the use of emerging technology alternatives such as eDRAM and Non-Volatile Memory (NVM) including STT-MRAM, PCM, and RRAM. The utilization of emerging technology in Last Level Cache (LLC) designs which occupies a signifcant fraction of total die area in Chip Multi Processors (CMPs) introduces new dimensions of vulnerability, energy consumption, and performance delivery. To be specific, a part of this research focuses on eDRAM Bit Upset Vulnerability Factor (BUVF) to assess vulnerable portion of the eDRAM refresh cycle where the critical charge varies depending on the write voltage, storage and bit-line capacitance. This dissertation broaden the study on vulnerability assessment of LLC through investigating the impact of Process Variations (PV) on narrow resistive sensing margins in high-density NVM arrays, including on-chip cache and primary memory. Large-latency and power-hungry Sense Amplifers (SAs) have been adapted to combat PV in the past. Herein, a novel approach is proposed to leverage the PV in NVM arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time. On the other hand, this dissertation investigates a novel technique to prioritize the service to 1) Extensive Read Reused Accessed blocks of the LLC that are silently dropped from higher levels of cache, and 2) the portion of the working set that may exhibit distant re-reference interval in L2. In particular, we develop a lightweight Multi-level Access History Profiler to effciently identify ERRA blocks through aggregating the LLC block addresses tagged with identical Most Signifcant Bits into a single entry. Experimental results indicate that the proposed technique can reduce the L2 read miss ratio by 51.7% on average across PARSEC and SPEC2006 workloads. In addition, this dissertation will broaden and apply advancements in theories of subspace recovery to pioneer computationally-aware in-situ operand reconstruction via the novel Logic In Interconnect (LI2) scheme. LI2 will be developed, validated, and re?ned both theoretically and experimentally to realize a radically different approach to post-Moore\u27s Law computing by leveraging low-rank matrices features offering data reconstruction instead of fetching data from main memory to reduce energy/latency cost per data movement. We propose LI2 enhancement to attain high performance delivery in the post-Moore\u27s Law era through equipping the contemporary micro-architecture design with a customized memory controller which orchestrates the memory request for fetching low-rank matrices to customized Fine Grain Reconfigurable Accelerator (FGRA) for reconstruction while the other memory requests are serviced as before. The goal of LI2 is to conquer the high latency/energy required to traverse main memory arrays in the case of LLC miss, by using in-situ construction of the requested data dealing with low-rank matrices. Thus, LI2 exchanges a high volume of data transfers with a novel lightweight reconstruction method under specific conditions using a cross-layer hardware/algorithm approach

High-Performance Energy-Efficient and Reliable Design of Spin-Transfer Torque Magnetic Memory

In this dissertation new computing paradigms, architectures and design philosophy are proposed and evaluated for adopting the STT-MRAM technology as highly reliable, energy efficient and fast memory. For this purpose, a novel cross-layer framework from the cell-level all the way up to the system- and application-level has been developed. In these framework, the reliability issues are modeled accurately with appropriate fault models at different abstraction levels in order to analyze the overall failure rates of the entire memory and its Mean Time To Failure (MTTF) along with considering the temperature and process variation effects. Design-time, compile-time and run-time solutions have been provided to address the challenges associated with STT-MRAM. The effectiveness of the proposed solutions is demonstrated in extensive experiments that show significant improvements in comparison to state-of-the-art solutions, i.e. lower-power, higher-performance and more reliable STT-MRAM design

Computing with Spintronics: Circuits and architectures

This thesis makes the following contributions towards the design of computing platforms with spintronic devices. 1) It explores the use of spintronic memories in the design of a domain-specific processor for an emerging class of data-intensive applications, namely recognition, mining and synthesis (RMS). Two different spintronic memory technologies — Domain Wall Memory (DWM) and STT-MRAM — are utilized to realize the different levels in the memory hierarchy of the domain-specific processor, based on their respective access characteristics. Architectural tradeoffs created by the use of spintronic memories are analyzed. The proposed design achieves 1.5X-4X improvements in energy-delay product compared to a CMOS baseline. 2) It describes the first attempt to use DWM in the cache hierarchy of general-purpose processors. DWM promises unparalleled density by packing several bits of data into each bit-cell. TapeCache, the proposed DWM-based cache architecture, utilizes suitable circuit and architectural optimizations to address two key challenges (i) the high energy and latency requirement of write operations and (ii) the need for shift operations to access the data stored in each DWM bit-cell. At the circuit level, DWM bit-cells that are tailored to the distinct design requirements of different levels in the cache hierarchy are proposed. At the architecture level, TapeCache proposes suitable cache organization and management policies to alleviate the performance impact of shift operations required to access data stored in DWM bit-cells. TapeCache achieves more than 7X improvements in both cache area and energy with virtually identical performance compared to an SRAM-based cache hierarchy. 3) It investigates the design of the on-chip memory hierarchy of general-purpose graphics processing units (GPGPUs)—massively parallel processors that are optimized for data-intensive high-throughput workloads—using DWM. STAG, a high density, energy-efficient Spintronic- Tape Architecture for GPGPU cache hierarchies is described. STAG utilizes different DWM bit-cells to realize different memory arrays in the GPGPU cache hierarchy. To address the challenge of high access latencies due to shifts, STAG predicts upcoming cache accesses by leveraging unique characteristics of GPGPU architectures and workloads, and prefetches data that are both likely to be accessed and require large numbers of shift operations. STAG achieves 3.3X energy reduction and 12.1% performance improvement over CMOS SRAM under iso-area conditions. 4) While the potential of spintronic devices for memories is widely recognized, their utility in realizing logic is much less clear. The thesis presents Spintastic, a new paradigm that utilizes Stochastic Computing (SC) to realize spintronic logic. In SC, data is encoded in the form of pseudo-random bitstreams, such that the probability of a \u271\u27 in a bitstream corresponds to the numerical value that it represents. SC can enable compact, low-complexity logic implementations of various arithmetic functions. Spintastic establishes the synergy between stochastic computing and spin-based logic by demonstrating that they mutually alleviate each other\u27s limitations. On the one hand, various building blocks of SC, which incur significant overheads in CMOS implementations, can be efficiently realized by exploiting the physical characteristics of spin devices. On the other hand, the reduced logic complexity and low logic depth of SC circuits alleviates the shortcomings of spintronic logic. Based on this insight, the design of spin-based stochastic arithmetic circuits, bitstream generators, bitstream permuters and stochastic-to-binary converter circuits are presented. Spintastic achieves 7.1X energy reduction over CMOS implementations for a wide range of benchmarks from the image processing, signal processing, and RMS application domains. 5) In order to evaluate the proposed spintronic designs, the thesis describes various device-to-architecture modeling frameworks. Starting with devices models that are calibrated to measurements, the characteristics of spintronic devices are successively abstracted into circuit-level and architectural models, which are incorporated into suitable simulation frameworks. (Abstract shortened by UMI.

새로운 메모리 기술을 기반으로 한 메모리 시스템 설계 기술

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2017. 2. 최기영.Performance and energy efficiency of modern computer systems are largely dominated by the memory system. This memory bottleneck has been exacerbated in the past few years with (1) architectural innovations for improving the efficiency of computation units (e.g., chip multiprocessors), which shift the major cause of inefficiency from processors to memory, and (2) the emergence of data-intensive applications, which demands a large capacity of main memory and an excessive amount of memory bandwidth to efficiently handle such workloads. In order to address this memory wall challenge, this dissertation aims at exploring the potential of emerging memory technologies and designing a high-performance, energy-efficient memory hierarchy that is aware of and leverages the characteristics of such new memory technologies. The first part of this dissertation focuses on energy-efficient on-chip cache design based on a new non-volatile memory technology called Spin-Transfer Torque RAM (STT-RAM). When STT-RAM is used to build on-chip caches, it provides several advantages over conventional charge-based memory (e.g., SRAM or eDRAM), such as non-volatility, lower static power, and higher density. However, simply replacing SRAM caches with STT-RAM rather increases the energy consumption because write operations of STT-RAM are slower and more energy-consuming than those of SRAM. To address this challenge, we propose four novel architectural techniques that can alleviate the impact of inefficient STT-RAM write operations on system performance and energy consumption. First, we apply STT-RAM to instruction caches (where write operations are relatively infrequent) and devise a power-gating mechanism called LASIC, which leverages the non-volatility of STT-RAM to turn off STT-RAM instruction caches inside small loops. Second, we propose lower-bits cache, which exploits the narrow bit-width characteristics of application data by caching frequent bit-flips at lower bits in a small SRAM cache. Third, we present prediction hybrid cache, an SRAM/STT-RAM hybrid cache whose block placement between SRAM and STT-RAM is determined by predicting the write intensity of each cache block with a new hardware structure called write intensity predictor. Fourth, we propose DASCA, which predicts write operations that can bypass the cache without incurring extra cache misses (called dead writes) and lets the last-level cache bypass such dead writes to reduce write energy consumption. The second part of this dissertation architects intelligent main memory and its host architecture support based on logic-enabled DRAM. Traditionally, main memory has served the sole purpose of storing data because the extra manufacturing cost of implementing rich functionality (e.g., computation) on a DRAM die was unacceptably high. However, the advent of 3D die stacking now provides a practical, cost-effective way to integrate complex logic circuits into main memory, thereby opening up the possibilities for intelligent main memory. For example, it can be utilized to implement advanced memory management features (e.g., scheduling, power management, etc.) inside memoryit can be also used to offload computation to main memory, which allows us to overcome the memory bandwidth bottleneck caused by narrow off-chip channels (commonly known as processing-in-memory or PIM). The remaining questions are what to implement inside main memory and how to integrate and expose such new features to existing systems. In order to answer these questions, we propose four system designs that utilize logic-enabled DRAM to improve system performance and energy efficiency. First, we utilize the existing logic layer of a Hybrid Memory Cube (a commercial logic-enabled DRAM product) to (1) dynamically turn off some of its off-chip links by monitoring the actual bandwidth demand and (2) integrate prefetch buffer into main memory to perform aggressive prefetching without consuming off-chip link bandwidth. Second, we propose a scalable accelerator for large-scale graph processing called Tesseract, in which graph processing computation is offloaded to specialized processors inside main memory in order to achieve memory-capacity-proportional performance. Third, we design a low-overhead PIM architecture for near-term adoption called PIM-enabled instructions, where PIM operations are interfaced as cache-coherent, virtually-addressed host processor instructions that can be executed either by the host processor or in main memory depending on the data locality. Fourth, we propose an energy-efficient PIM system called aggregation-in-memory, which can adaptively execute PIM operations at any level of the memory hierarchy and provides a fully automated compiler toolchain that transforms existing applications to use PIM operations without programmer intervention.Chapter 1 Introduction 1 1.1 Inefficiencies in the Current Memory Systems 2 1.1.1 On-Chip Caches 2 1.1.2 Main Memory 2 1.2 New Memory Technologies: Opportunities and Challenges 3 1.2.1 Energy-Efficient On-Chip Caches based on STT-RAM 3 1.2.2 Intelligent Main Memory based on Logic-Enabled DRAM 6 1.3 Dissertation Overview 9 Chapter 2 Previous Work 11 2.1 Energy-Efficient On-Chip Caches based on STT-RAM 11 2.1.1 Hybrid Caches 11 2.1.2 Volatile STT-RAM 13 2.1.3 Redundant Write Elimination 14 2.2 Intelligent Main Memory based on Logic-Enabled DRAM 15 2.2.1 PIM Architectures in the 1990s 15 2.2.2 Modern PIM Architectures based on 3D Stacking 15 2.2.3 Modern PIM Architectures on Memory Dies 17 Chapter 3 Loop-Aware Sleepy Instruction Cache 19 3.1 Architecture 20 3.1.1 Loop Cache 21 3.1.2 Loop-Aware Sleep Controller 22 3.2 Evaluation and Discussion 24 3.2.1 Simulation Environment 24 3.2.2 Energy 25 3.2.3 Performance 27 3.2.4 Sensitivity Analysis 27 3.3 Summary 28 Chapter 4 Lower-Bits Cache 29 4.1 Architecture 29 4.2 Experiments 32 4.2.1 Simulator and Cache Model 32 4.2.2 Results 33 4.3 Summary 34 Chapter 5 Prediction Hybrid Cache 35 5.1 Problem and Motivation 37 5.1.1 Problem Definition 37 5.1.2 Motivation 37 5.2 Write Intensity Predictor 38 5.2.1 Keeping Track of Trigger Instructions 39 5.2.2 Identifying Hot Trigger Instructions 40 5.2.3 Dynamic Set Sampling 41 5.2.4 Summary 42 5.3 Prediction Hybrid Cache 43 5.3.1 Need for Write Intensity Prediction 43 5.3.2 Organization 43 5.3.3 Operations 44 5.3.4 Dynamic Threshold Adjustment 45 5.4 Evaluation Methodology 48 5.4.1 Simulator Configuration 48 5.4.2 Workloads 50 5.5 Single-Core Evaluations 51 5.5.1 Energy Consumption and Speedup 51 5.5.2 Energy Breakdown 53 5.5.3 Coverage and Accuracy 54 5.5.4 Sensitivity to Write Intensity Threshold 55 5.5.5 Impact of Dynamic Set Sampling 55 5.5.6 Results for Non-Write-Intensive Workloads 56 5.6 Multicore Evaluations 57 5.7 Summary 59 Chapter 6 Dead Write Prediction Assisted STT-RAM Cache 61 6.1 Motivation 62 6.1.1 Energy Impact of Inefficient Write Operations 62 6.1.2 Limitations of Existing Approaches 63 6.1.3 Potential of Dead Writes 64 6.2 Dead Write Classification 65 6.2.1 Dead-on-Arrival Fills 65 6.2.2 Dead-Value Fills 66 6.2.3 Closing Writes 66 6.2.4 Decomposition 67 6.3 Dead Write Prediction Assisted STT-RAM Cache Architecture 68 6.3.1 Dead Write Prediction 68 6.3.2 Bidirectional Bypass 71 6.4 Evaluation Methodology 72 6.4.1 Simulation Configuration 72 6.4.2 Workloads 74 6.5 Evaluation for Single-Core Systems 75 6.5.1 Energy Consumption and Speedup 75 6.5.2 Coverage and Accuracy 78 6.5.3 Sensitivity to Signature 78 6.5.4 Sensitivity to Update Policy 80 6.5.5 Implications of Device-/Circuit-Level Techniques for Write Energy Reduction 80 6.5.6 Impact of Prefetching 80 6.6 Evaluation for Multi-Core Systems 81 6.6.1 Energy Consumption and Speedup 81 6.6.2 Application to Inclusive Caches 83 6.6.3 Application to Three-Level Cache Hierarchy 84 6.7 Summary 85 Chapter 7 Link Power Management for Hybrid Memory Cubes 87 7.1 Background and Motivation 88 7.1.1 Hybrid Memory Cube 88 7.1.2 Motivation 89 7.2 HMC Link Power Management 91 7.2.1 Link Delay Monitor 91 7.2.2 Power State Transition 94 7.2.3 Overhead 95 7.3 Two-Level Prefetching 95 7.4 Application to Multi-HMC Systems 97 7.5 Experiments 98 7.5.1 Methodology 98 7.5.2 Link Energy Consumption and Speedup 100 7.5.3 HMC Energy Consumption 102 7.5.4 Runtime Behavior of LPM 102 7.5.5 Sensitivity to Slowdown Threshold 104 7.5.6 LPM without Prefetching 104 7.5.7 Impact of Prefetching on Link Traffic 105 7.5.8 On-Chip Prefetcher Aggressiveness in 2LP 107 7.5.9 Tighter Off-Chip Bandwidth Margin 107 7.5.10 Multithreaded Workloads 108 7.5.11 Multi-HMC Systems 109 7.6 Summary 111 Chapter 8 Tesseract PIM System for Parallel Graph Processing 113 8.1 Background and Motivation 115 8.1.1 Large-Scale Graph Processing 115 8.1.2 Graph Processing on Conventional Systems 117 8.1.3 Processing-in-Memory 118 8.2 Tesseract Architecture 119 8.2.1 Overview 119 8.2.2 Remote Function Call via Message Passing 122 8.2.3 Prefetching 124 8.2.4 Programming Interface 126 8.2.5 Application Mapping 127 8.3 Evaluation Methodology 128 8.3.1 Simulation Configuration 128 8.3.2 Workloads 129 8.4 Evaluation Results 130 8.4.1 Performance 130 8.4.2 Iso-Bandwidth Comparison 133 8.4.3 Execution Time Breakdown 134 8.4.4 Prefetch Efficiency 134 8.4.5 Scalability 135 8.4.6 Effect of Higher Off-Chip Network Bandwidth 136 8.4.7 Effect of Better Graph Distribution 137 8.4.8 Energy/Power Consumption and Thermal Analysis 138 8.5 Summary 139 Chapter 9 PIM-Enabled Instructions 141 9.1 Potential of ISA Extensions as the PIM Interface 143 9.2 PIM Abstraction 145 9.2.1 Operations 145 9.2.2 Memory Model 147 9.2.3 Software Modification 148 9.3 Architecture 148 9.3.1 Overview 148 9.3.2 PEI Computation Unit (PCU) 149 9.3.3 PEI Management Unit (PMU) 150 9.3.4 Virtual Memory Support 153 9.3.5 PEI Execution 153 9.3.6 Comparison with Active Memory Operations 154 9.4 Target Applications for Case Study 155 9.4.1 Large-Scale Graph Processing 155 9.4.2 In-Memory Data Analytics 156 9.4.3 Machine Learning and Data Mining 157 9.4.4 Operation Summary 157 9.5 Evaluation Methodology 158 9.5.1 Simulation Configuration 158 9.5.2 Workloads 159 9.6 Evaluation Results 159 9.6.1 Performance 160 9.6.2 Sensitivity to Input Size 163 9.6.3 Multiprogrammed Workloads 164 9.6.4 Balanced Dispatch: Idea and Evaluation 165 9.6.5 Design Space Exploration for PCUs 165 9.6.6 Performance Overhead of the PMU 167 9.6.7 Energy, Area, and Thermal Issues 167 9.7 Summary 168 Chapter 10 Aggregation-in-Memory 171 10.1 Motivation 173 10.1.1 Rethinking PIM for Energy Efficiency 173 10.1.2 Aggregation as PIM Operations 174 10.2 Architecture 176 10.2.1 Overview 176 10.2.2 Programming Model 177 10.2.3 On-Chip Caches 177 10.2.4 Coherence and Consistency 181 10.2.5 Main Memory 181 10.2.6 Potential Generalization Opportunities 183 10.3 Compiler Support 184 10.4 Contributions over Prior Art 185 10.4.1 PIM-Enabled Instructions 185 10.4.2 Parallel Reduction in Caches 187 10.4.3 Row Buffer Locality of DRAM Writes 188 10.5 Target Applications 188 10.6 Evaluation Methodology 190 10.6.1 Simulation Configuration 190 10.6.2 Hardware Overhead 191 10.6.3 Workloads 192 10.7 Evaluation Results 192 10.7.1 Energy Consumption and Performance 192 10.7.2 Dynamic Energy Breakdown 196 10.7.3 Comparison with Aggressive Writeback 197 10.7.4 Multiprogrammed Workloads 198 10.7.5 Comparison with Intrinsic-based Code 198 10.8 Summary 199 Chapter 11 Conclusion 201 11.1 Energy-Efficient On-Chip Caches based on STT-RAM 202 11.2 Intelligent Main Memory based on Logic-Enabled DRAM 203 Bibliography 205 요약 227Docto

ARCHITECTING EMERGING MEMORY TECHNOLOGIES FOR ENERGY-EFFICIENT COMPUTING IN MODERN PROCESSORS

Ph.DDOCTOR OF PHILOSOPH