Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

Special Topics in Information Technology

This open access book presents thirteen outstanding doctoral dissertations in Information Technology from the Department of Electronics, Information and Bioengineering, Politecnico di Milano, Italy. Information Technology has always been highly interdisciplinary, as many aspects have to be considered in IT systems. The doctoral studies program in IT at Politecnico di Milano emphasizes this interdisciplinary nature, which is becoming more and more important in recent technological advances, in collaborative projects, and in the education of young researchers. Accordingly, the focus of advanced research is on pursuing a rigorous approach to specific research topics starting from a broad background in various areas of Information Technology, especially Computer Science and Engineering, Electronics, Systems and Control, and Telecommunications. Each year, more than 50 PhDs graduate from the program. This book gathers the outcomes of the thirteen best theses defended in 2019-20 and selected for the IT PhD Award. Each of the authors provides a chapter summarizing his/her findings, including an introduction, description of methods, main achievements and future work on the topic. Hence, the book provides a cutting-edge overview of the latest research trends in Information Technology at Politecnico di Milano, presented in an easy-to-read format that will also appeal to non-specialists

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

Robust Design With Increasing Device Variability In Sub-Micron Cmos And Beyond: A Bottom-Up Framework

My Ph.D. research develops a tiered systematic framework for designing process-independent and variability-tolerant integrated circuits. This bottom-up approach starts from designing self-compensated circuits as accurate building blocks, and moves up to sub-systems with negative feedback loop and full system-level calibration. a. Design methodology for self-compensated circuits My collaborators and I proposed a novel design methodology that offers designers intuitive insights to create new topologies that are self-compensated and intrinsically process-independent without external reference. It is the first systematic approaches to create "correct-by-design" low variation circuits, and can scale beyond sub-micron CMOS nodes and extend to emerging non-silicon nano-devices. We demonstrated this methodology with an addition-based current source in both 180nm and 90nm CMOS that has 2.5x improved process variation and 6.7x improved temperature sensitivity, and a GHz ring oscillator (RO) in 90nm CMOS with 65% reduction in frequency variation and 85ppm/oC temperature sensitivity. Compared to previous designs, our RO exhibits the lowest temperature sensitivity and process variation, while consuming the least amount of power in the GHz range. Another self-compensated low noise amplifiers (LNA) we designed also exhibits 3.5x improvement in both process and temperature variation and enhanced supply voltage regulation. As part of the efforts to improve the accuracy of the building blocks, I also demonstrated experimentally that due to "diversification effect", the upper bound of circuit accuracy can be better than the minimum tolerance of on-chip devices (MOSFET, R, C, and L), which allows circuit designers to achieve better accuracy with less chip area and power consumption. b. Negative feedback loop based sub-system I explored the feasibility of using high-accuracy DC blocks as low-variation "rulers-on-chip" to regulate high-speed high-variation blocks (e.g. GHz oscillators). In this way, the trade-off between speed (which can be translated to power) and variation can be effectively de-coupled. I demonstrated this proposed structure in an integrated GHz ring oscillators that achieve 2.6% frequency accuracy and 5x improved temperature sensitivity in 90nm CMOS. c. Power-efficient system-level calibration To enable full system-level calibration and further reduce power consumption in active feedback loops, I implemented a successive-approximation-based calibration scheme in a tunable GHz VCO for low power impulse radio in 65nm CMOS. Events such as power-up and temperature drifts are monitored by the circuits and used to trigger the need-based frequency calibration. With my proposed scheme and circuitry, the calibration can be performed under 135pJ and the oscillator can operate between 0.8 and 2GHz at merely 40[MICRO SIGN]W, which is ideal for extremely power-and-cost constraint applications such as implantable biomedical device and wireless sensor networks

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware

18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems: Proceedings

Proceedings of the 18th IEEE Workshop on Nonlinear Dynamics of Electronic Systems, which took place in Dresden, Germany, 26 – 28 May 2010.:Welcome Address ........................ Page I Table of Contents ........................ Page III Symposium Committees .............. Page IV Special Thanks ............................. Page V Conference program (incl. page numbers of papers) ................... Page VI Conference papers Invited talks ................................ Page 1 Regular Papers ........................... Page 14 Wednesday, May 26th, 2010 ......... Page 15 Thursday, May 27th, 2010 .......... Page 110 Friday, May 28th, 2010 ............... Page 210 Author index ............................... Page XII

Fabrication and characterization of hybrid ferromagnetic-organic heterostructures for spintronics application

Recent research in the field of organic spintronics highlighted the peculiar spin-dependent properties of the interface formed by an organic semiconductor (OSC) chemisorbed over a 3d ferromagnetic metal, also known as spinterface. The hybridization between the molecular and metallic orbitals, typically π orbitals of the molecule and the d orbitals of the ferromagnet, give rise to spin dependent properties that were not expected by considering the single components of interfaces, as for example the appearance of a magnetic moment on non-magnetic molecules or changes in the magnetic behavior of the ferromagnet. From a technological viewpoint these aspects provide novel engineering schemes for spin memory and for spintronics devices, featuring unexpected interfacial magnetoresistance, spin-filtering effects and even modulated magnetic anisotropy. Applications of these concepts to devices require nevertheless to transfer the spinterface effects from an ideal interface to room temperature operating thin films. In this view, my work presents for the first time how spinterface effects can be obtained even at room temperature on polycrystalline ferromagnetic Co thin films interfaced with organic molecules. The considered molecules were commercial and widely used in the field of organic electronics: Fullerene (C60), Gallium Quinoline (Gaq3) and Sexithiophene (T6). An increase of coercivity, up to 100% at room temperature, has been obtained on the Co ultra-thin films by the deposition of an organic molecule. This effect is accompanied by a change of in-plane anisotropy that is molecule-dependent. Moreover the Spinterface effect is not limited to the interfacial layer, but it extends throughout the whole thickness of the ferromagnetic layer, posing new questions on the nature of the 3d metal-molecule interaction