On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted

De-embedding method for electrical response extraction of through-silicon via (TSV) in silicon interposer technology and signal integrity performance comparison with embedded multi-die interconnect bridge (EMIB) technology

Traditional two-dimensional system-in-package (2D SiP) can no longer support the scaling of size, power, bandwidth, and cost at the same rate required by Moore\u27s Law. Three-dimensional integrated circuits (3D-ICs), 2.5D silicon interposer technology in which through silicon vias are widely used, are implemented to meet these challenges. Embedded multi-die interconnect bridge (EMIB) technology are proposed as well. In Section 1, a novel de-embedding method is proposed for TSV characterization by using a set of simple yet efficient test patterns. Full wave models and corresponding equivalent circuits are provided to explain the electrical performance of the test patterns clearly. Furthermore, broadband measurement is performed for all test patterns up to 40 GHz, to verify the accuracy of the developed full wave models. Scanning Electron Microscopy (SEM) measurements are taken for all the test patterns to optimize the full wave models. Finally, the proposed de-embedding method is applied to extract the response of the TSV pair. Good agreement between the de-embedded results with analytical characterization and the full-wave simulation for a single TSV pair indicates that the proposed de-embedding method works effectively up to 40 GHz. In Section 2, the signal integrity performance of EMIB technology is evaluated and compared with silicon interposer technology. Two examples are available for each technology, one is simple with only one single trace pair considered; the other is complex with three differential pairs considered in the full wave simulation. Results of insertion loss, return loss, crosstalk and eye diagram are provided as criteria to evaluate the signal integrity performance for both technologies. This work provides guidelines to both top-level decision and specific IC or channel design --Abstract, page iii

Signal and Power Integrity Challenges for High Density System-on-Package

As the increasing desire for more compact, portable devices outpaces Moore’s law, innovation in packaging and system design has played a significant role in the continued miniaturization of electronic systems.Integrating more active and passive components into the package itself, as the case for system-on-package (SoP), has shown very promising results in overall size reduction and increased performance of electronic systems.With this ability to shrink electrical systems comes the many challenges of sustaining, let alone improving, reliability and performance. The fundamental signal, power, and thermal integrity issues are discussed in detail, along with published techniques from around the industry to mitigate these issues in SoP applications

High Speed Test Interface Module Using MEMS Technology

With the transient frequency of available CMOS technologies exceeding hundreds of gigahertz and the increasing complexity of Integrated Circuit (IC) designs, it is now apparent that the architecture of current testers needs to be greatly improved to keep up with the formidable challenges ahead. Test requirements for modern integrated circuits are becoming more stringent, complex and costly. These requirements include an increasing number of test channels, higher test-speeds and enhanced measurement accuracy and resolution. In a conventional test configuration, the signal path from Automatic Test Equipment (ATE) to the Device-Under-Test (DUT) includes long traces of wires. At frequencies above a few gigahertz, testing integrated circuits becomes a challenging task. The effects on transmission lines become critical requiring impedance matching to minimize signal reflection. AC resistance due to the skin effect and electromagnetic coupling caused by radiation can also become important factors affecting the test results. In the design of a Device Interface Board (DIB), the greater the physical separation of the DUT and the ATE pin electronics, the greater the distortion and signal degradation. In this work, a new Test Interface Module (TIM) based on MEMS technology is proposed to reduce the distance between the tester and device-under-test by orders of magnitude. The proposed solution increases the bandwidth of test channels and reduces the undesired effects of transmission lines on the test results. The MEMS test interface includes a fixed socket and a removable socket. The removable socket incorporates MEMS contact springs to provide temporary with the DUT pads and the fixed socket contains a bed of micro-pins to establish electrical connections with the ATE pin electronics. The MEMS based contact springs have been modified to implement a high-density wafer level test probes for Through Silicon Vias (TSVs) in three dimensional integrated circuits (3D-IC). Prototypes have been fabricated using Silicon On Insulator SOI wafer. Experimental results indicate that the proposed architectures can operate up to 50 GHz without much loss or distortion. The MEMS probes can also maintain a good elastic performance without any damage or deformation in the test phase

三次元集積回路におけるチップ間ノイズ結合のその場評価と解析手法に関する研究

博士（工学）神戸大

VLSI Design

This book provides some recent advances in design nanometer VLSI chips. The selected topics try to present some open problems and challenges with important topics ranging from design tools, new post-silicon devices, GPU-based parallel computing, emerging 3D integration, and antenna design. The book consists of two parts, with chapters such as: VLSI design for multi-sensor smart systems on a chip, Three-dimensional integrated circuits design for thousand-core processors, Parallel symbolic analysis of large analog circuits on GPU platforms, Algorithms for CAD tools VLSI design, A multilevel memetic algorithm for large SAT-encoded problems, etc

Modeling Of Vertical Side Chip Interconnect Technology For 3-Dimensional Packaging

In this miniaturization era, previously, shrinking the technology node was used in order to maintain and improve the electrical performance of a device. However, this method is getting difficult due to the limitation of Silicon (Si) atomic size of the material in designing the integrated circuit (IC). Moreover, the signaling techniques play a crucial role in determining the overall performance of a device. Thus, this thesis explores an innovative concept of vertical side-chip interconnection (VSCI) for 3 dimension (3D) packaging to improve the performance of IC. The electrical performance of the proposed vertical side-chip stacked package is discussed in order to optimize the structure of VSCI. Optimization of VSCI structure is based on stacked die package application with the trending of through silicon via (TSV) signal orientation, TSV signal to ground ratio and TSV signal pitch impact to the overall signal integrity performance. Then, this thesis had underscored the electrical performance of the aforementioned stacked die packages from signal integrity perspective in terms of impedance matching, noise shielding and electrical losses. Then, the sensitivity study of channel termination on vertical side-chip interconnection (VSCI) was carried out. The conventional 3D integrated system with solder bump and surface activated bonding (SAB) technology also was investigated as comparison with VSCI. The trends of eye height opening and one of the critical signaling parameters were analyzed based on transmission channel length, input rise time, receiver device capacitance and termination resistance factors. Finally, full wave simulation using 3D electromagnetic field solvers and transient analysis results showed the feasibility of VSCI as alternative method to achieve comparable electrical performance with the conventional solder bump and SAB interconnection models at 100Gbps transfer rate. The simulation results showed potential solution space of VSCI for weak receiver termination to achieve more 350mV eye height opening (based on 1V supply voltage) at 30Gbps

A Cost-Effective Fault Tolerance Technique for Functional TSV in 3-D ICs

Regular and redundant through-silicon via (TSV) interconnects are used in fault tolerance techniques of 3-D IC. However, the fabrication process of TSVs results in defects that reduce the yield and reliability of TSVs. On the other hand, each TSV is associated with a significant amount of on-chip area overhead. Therefore, unlike the state-of-the-art fault tolerance architectures, here we propose the time division multiplexing access (TDMA)-based fault tolerance technique without using any redundant TSVs, which reduces the area overhead and enhances the yield. In the proposed technique, by means of TDMA, we reroute the signal through defect-free TSV. Subsequently, an architecture based on the proposed technique has been designed, evaluated, and validated on logic-on-logic 3-D IWLS'05 benchmark circuits using 130-nm technology node. The proposed technique is found to reduce the area overhead by 28.70%-40.60%, compared to the state-of-the-art architectures and results in a yield of 98.9%-99.8%