The impact of transistor aging on the reliability of level shifters in nano-scale CMOS technology

On-chip level shifters are the interface between parts of an Integrated Circuit (IC) that operate in different voltage levels. For this reason, they are indispensable blocks in Multi-Vdd System-on-Chips (SoCs). In this paper, we present a comprehensive analysis of the effects of Bias Temperature Instability (BTI) aging on the delay and the power consumption of level shifters. We evaluate the standard High-to-Low/Low-to-High level shifters, as well as several recently proposed level-shifter designs, implemented using a 32 nm CMOS technology. Through SPICE simulations, we demonstrate that the delay degradation due to BTI aging varies for each level shifter design: it is 83.3% on average and it exceeds 200% after 5 years of operation for the standard Low-to-High and the NDLSs level shifters, which is 10 × higher than the BTI-induced delay degradation of standard CMOS logic cells. Similarly, we show that the examined designs can suffer from an average 38.2% additional power consumption after 5 years of operation that, however, reaches 180% for the standard level-shifter and exceeds 163% for the NDLSs design. The high susceptibility of these designs to BTI is attributed to their differential signaling structure, combined with the very low supply voltage. Moreover, we show that recently proposed level-up shifter design employing a voltage step-down technique are

Reduction of NBTI-Induced Degradation on Ring Oscillators in FPGA

Ring Oscillators are used for variety of purposes to enhance reliability on LSIs or FPGAs. This paper introduces an aging-tolerant design structure of ring oscillators that are used in FPGAs. The structure is able to reduce NBTI-induced degradation in a ring oscillator\u27s frequency by setting PMOS transistors of look-up tables in an off-state when the oscillator is not working. The evaluation of a variety of ring oscillators using Altera Cyclone IV device (60nm technology) shows that the proposed structure is capable of controlling degradation level as well as reducing more than 37% performance degradation compared to the conventional oscillators.The 20th IEEE Pacific Rim International Symposium on Dependable Computing (PRDC 2014), Nov 19-21, 2014, Singapor

Reliability-aware memory design using advanced reconfiguration mechanisms

Fast and Complex Data Memory systems has become a necessity in modern computational units in today's integrated circuits. These memory systems are integrated in form of large embedded memory for data manipulation and storage. This goal has been achieved by the aggressive scaling of transistor dimensions to few nanometer (nm) sizes, though; such a progress comes with a drawback, making it critical to obtain high yields of the chips. Process variability, due to manufacturing imperfections, along with temporal aging, mainly induced by higher electric fields and temperature, are two of the more significant threats that can no longer be ignored in nano-scale embedded memory circuits, and can have high impact on their robustness. Static Random Access Memory (SRAM) is one of the most used embedded memories; generally implemented with the smallest device dimensions and therefore its robustness can be highly important in nanometer domain design paradigm. Their reliable operation needs to be considered and achieved both in cell and also in architectural SRAM array design. Recently, and with the approach to near/below 10nm design generations, novel non-FET devices such as Memristors are attracting high attention as a possible candidate to replace the conventional memory technologies. In spite of their favorable characteristics such as being low power and highly scalable, they also suffer with reliability challenges, such as process variability and endurance degradation, which needs to be mitigated at device and architectural level. This thesis work tackles such problem of reliability concerns in memories by utilizing advanced reconfiguration techniques. In both SRAM arrays and Memristive crossbar memories novel reconfiguration strategies are considered and analyzed, which can extend the memory lifetime. These techniques include monitoring circuits to check the reliability status of the memory units, and architectural implementations in order to reconfigure the memory system to a more reliable configuration before a fail happens.Actualmente, el diseño de sistemas de memoria en circuitos integrados busca continuamente que sean más rápidos y complejos, lo cual se ha vuelto de gran necesidad para las unidades de computación modernas. Estos sistemas de memoria están integrados en forma de memoria embebida para una mejor manipulación de los datos y de su almacenamiento. Dicho objetivo ha sido conseguido gracias al agresivo escalado de las dimensiones del transistor, el cual está llegando a las dimensiones nanométricas. Ahora bien, tal progreso ha conllevado el inconveniente de una menor fiabilidad, dado que ha sido altamente difícil obtener elevados rendimientos de los chips. La variabilidad de proceso - debido a las imperfecciones de fabricación - junto con la degradación de los dispositivos - principalmente inducido por el elevado campo eléctrico y altas temperaturas - son dos de las más relevantes amenazas que no pueden ni deben ser ignoradas por más tiempo en los circuitos embebidos de memoria, echo que puede tener un elevado impacto en su robusteza final. Static Random Access Memory (SRAM) es una de las celdas de memoria más utilizadas en la actualidad. Generalmente, estas celdas son implementadas con las menores dimensiones de dispositivos, lo que conlleva que el estudio de su robusteza es de gran relevancia en el actual paradigma de diseño en el rango nanométrico. La fiabilidad de sus operaciones necesita ser considerada y conseguida tanto a nivel de celda de memoria como en el diseño de arquitecturas complejas basadas en celdas de memoria SRAM. Actualmente, con el diseño de sistemas basados en dispositivos de 10nm, dispositivos nuevos no-FET tales como los memristores están atrayendo una elevada atención como posibles candidatos para reemplazar las actuales tecnologías de memorias convencionales. A pesar de sus características favorables, tales como el bajo consumo como la alta escabilidad, ellos también padecen de relevantes retos de fiabilidad, como son la variabilidad de proceso y la degradación de la resistencia, la cual necesita ser mitigada tanto a nivel de dispositivo como a nivel arquitectural. Con todo esto, esta tesis doctoral afronta tales problemas de fiabilidad en memorias mediante la utilización de técnicas de reconfiguración avanzada. La consideración de nuevas estrategias de reconfiguración han resultado ser validas tanto para las memorias basadas en celdas SRAM como en `memristive crossbar¿, donde se ha observado una mejora significativa del tiempo de vida en ambos casos. Estas técnicas incluyen circuitos de monitorización para comprobar la fiabilidad de las unidades de memoria, y la implementación arquitectural con el objetivo de reconfigurar los sistemas de memoria hacia una configuración mucho más fiables antes de que el fallo suced

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits.

The VLSI industry has achieved advancement in technology by continuous process scaling which has resulted in large scale integration. However, scaling also poses new reliability challenges. Currently the industry ensures the reliability of chips by limiting the supply voltage and temperature, but these constraints limit the benefits that are obtained from new process nodes. This method of managing reliability during design time is called Static Reliability Management (SRM). While SRM ensures that all the chips meet the reliability specifications, it introduces extreme pessimism in the chips as it margins for worst process, voltage, temperature and circuit state (PVTS), which will not be required for the majority of chips. To reduce the pessimism of SRM, the system needs to be made aware of its reliability by employing degradation sensors or degradation detection techniques. Using the degradation measurements, the system can estimate its lifetime and can adjust its operating points (supply voltage and temperature limits) dynamically and trade excess reliability slack with performance. This method of reliability management is called Dynamic Reliability Management (DRM). In this work we investigate different methods of DRM. We focus on two critical degradation mechanisms: Negative Bias Temperature Instability (NBTI) and Gate-oxide degradation. We propose NBTI and Gate-oxide degradation sensors with low area and power overhead, which allows them to be deployed in large numbers on the chip enabling collection of degradation statistics. The sensors were designed in 130nm and 45nm process nodes and tested on two test-chips. We then used the sensors to perform DRM in a silicon test for the first time. We demonstrate that DRM eliminates excess reliability slack which allows for a boost in supply voltage and performance. We then propose in situ Bias Temperature Instability (BTI) and Gate-oxide wear-out detection techniques. The in situ technique measures the degradation in the actual devices in the core and removes all the layers of uncertainty which arise because of the statistical nature of degradation and its dependence on PVTS. We implemented and tested these techniques on two test chips in a 65nm process node. We then use the BTI sensing technique to perform DRM.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/86281/1/prsingh_1.pd