ULTRA-LOW-JITTER, MMW-BAND FREQUENCY SYNTHESIZERS BASED ON A CASCADED ARCHITECTURE

Department of Electrical EngineeringThis thesis presents an ultra-low-jitter, mmW-band frequency synthesizers based on a cascaded architecture. First, the mmW-band frequency synthesizer based on a CP PLL is presented. At the first stage, the CP PLL operating at GHz-band frequencies generated low-jitter output signals due to a high-Q VCO. At the second stage, an ILFM operating at mmW-band frequencies has a wide injection bandwidth, so that the jitter performance of the mmW-band output signals is determined by the GHz-range PLL. The proposed ultra-low-jitter, mmW-band frequency synthesizer based on a CP PLL, fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 206 fs and an IPN of ???31 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively. However, due to a large in-band phase noise contribution of a PFD and a CP in the CP PLL, this first stage was difficult to achieve an ultra-low in-band phase noise. Second, to improve the in-band phase noise further, the mmW-band frequency synthesizer based on a digital SSPLL is presented. At the first stage, the digital SSPLL operating at GHz-band frequencies generated ultra-low-jitter output signals due to its sub-sampling operation and a high-Q GHz VCO. To minimize the quantization noise of the voltage quantizer in the digital SSPLL, this thesis presents an OSVC as a voltage quantizer while a small amount of power was consumed. The proposed ultra-low-jitter, mmW-band frequency synthesizer fabricated in a 65-nm CMOS technology, generated output signals from GHz-band frequencies to mmW-band frequencies, achieving an RMS jitter of 77 fs and an IPN of ???40 dBc. The active silicon area and the total power consumption were 0.32 mm2 and 42 mW, respectively.clos

Performance improvement of fractional N-PLL synthesizers for digital communication applications

Loop filter with two order was designed to improve the performance of the fractional N-phase locked loop (PLL) circuit (reference spurs noise and switching time), decreasing these two factors give good characteristic to fractional N-PLL circuit, the second order and third order loop filters are widely used in frequency synthesizer because they give good stability tolerance and for their simple architecture. They are designed at bandwidth B=125 KHz and its multipoles, at two values of the phase margin (pm)= 35°, 57°. MATLAB program was used to find the lock time, the component values for each element in the loop filter, also the filter impedance T(s), the bode plot of frequency response for close loop (CL) and open loop gain (OL). It is found by comparing the result of the frequency response for the 2nd order loop filter and 3rd order loop filter, that increasing the order of the filter will reduce the spurs noise that destroy the received signal at receiving side

Design of Digital Frequency Synthesizer for 5G SDR Systems

The previous frequency synthesizer techniques for scalable SDR are not compatible with high end applications due to its complex computations and the intolerance over increased path interference rate which leads to an unsatisfied performance with improved user rate in real time environment. Designing an efficient frequency synthesizer framework in the SDR system is essential for 5G wireless communication systems with improved Quality of service (QoS). Consequently, this research has been performed based on the merits of fully digitalized frequency synthesizer and its explosion in wide range of frequency band generations. In this paper hardware optimized reconfigurable digital base band processing and frequency synthesizer model is proposed without making any design complexity trade-off to deal with the multiple standards. Here fully digitalized frequency synthesizer is introduced using simplified delay units to reduce the design complexity. Experimental results and comparative analyzes are carried out to validate the performance metrics and exhaustive test bench simulation is also carried out to verify the functionality

Nanophotonic soliton-based microwave synthesizers

Microwave photonic technologies, which upshift the carrier into the optical domain to facilitate the generation and processing of ultrawide-band electronic signals at vastly reduced fractional bandwidths, have the potential to achieve superior performance compared to conventional electronics for targeted functions. For microwave photonic applications such as filters, coherent radars, subnoise detection, optical communications and low-noise microwave generation, frequency combs are key building blocks. By virtue of soliton microcombs, frequency combs can now be built using CMOS compatible photonic integrated circuits, operated with low power and noise, and have already been employed in system-level demonstrations. Yet, currently developed photonic integrated microcombs all operate with repetition rates significantly beyond those that conventional electronics can detect and process, compounding their use in microwave photonics. Here we demonstrate integrated soliton microcombs operating in two widely employed microwave bands, X- and K-band. These devices can produce more than 300 comb lines within the 3-dB-bandwidth, and generate microwave signals featuring phase noise levels below 105 dBc/Hz (140 dBc/Hz) at 10 kHz (1 MHz) offset frequency, comparable to modern electronic microwave synthesizers. In addition, the soliton pulse stream can be injection-locked to a microwave signal, enabling actuator-free repetition rate stabilization, tuning and microwave spectral purification, at power levels compatible with silicon-based lasers (<150 mW). Our results establish photonic integrated soliton microcombs as viable integrated low-noise microwave synthesizers. Further, the low repetition rates are critical for future dense WDM channel generation schemes, and can significantly reduce the system complexity of photonic integrated frequency synthesizers and atomic clocks

Process and Temperature Compensated Wideband Injection Locked Frequency Dividers and their Application to Low-Power 2.4-GHz Frequency Synthesizers

There has been a dramatic increase in wireless awareness among the user community in the past five years. The 2.4-GHz Industrial, Scientific and Medical (ISM) band is being used for a diverse range of applications due to the following reasons. It is the only unlicensed band approved worldwide and it offers more bandwidth and supports higher data rates compared to the 915-MHz ISM band. The power consumption of devices utilizing the 2.4-GHz band is much lower compared to the 5.2-GHz ISM band. Protocols like Bluetooth and Zigbee that utilize the 2.4-GHz ISM band are becoming extremely popular. Bluetooth is an economic wireless solution for short range connectivity between PC, cell phones, PDAs, Laptops etc. The Zigbee protocol is a wireless technology that was developed as an open global standard to address the unique needs of low-cost, lowpower, wireless sensor networks. Wireless sensor networks are becoming ubiquitous, especially after the recent terrorist activities. Sensors are employed in strategic locations for real-time environmental monitoring, where they collect and transmit data frequently to a nearby terminal. The devices operating in this band are usually compact and battery powered. To enhance battery life and avoid the cumbersome task of battery replacement, the devices used should consume extremely low power. Also, to meet the growing demands cost and sized has to be kept low which mandates fully monolithic implementation using low cost process. CMOS process is extremely attractive for such applications because of its low cost and the possibility to integrate baseband and high frequency circuits on the same chip. A fully integrated solution is attractive for low power consumption as it avoids the need for power hungry drivers for driving off-chip components. The transceiver is often the most power hungry block in a wireless communication system. The frequency divider (prescaler) and the voltage controlled oscillator in the transmitter’s frequency synthesizer are among the major sources of power consumption. There have been a number of publications in the past few decades on low-power high-performance VCOs. Therefore this work focuses on prescalers. A class of analog frequency dividers called as Injection-Locked Frequency Dividers (ILFD) was introduced in the recent past as low power frequency division. ILFDs can consume an order of magnitude lower power when compared to conventional flip-flop based dividers. However the range of operation frequency also knows as the locking range is limited. ILFDs can be classified as LC based and Ring based. Though LC based are insensitive to process and temperature variation, they cannot be used for the 2.4-GHz ISM band because of the large size of on-chip inductors at these frequencies. This causes a lot of valuable chip area to be wasted. Ring based ILFDs are compact and provide a low power solution but are extremely sensitive to process and temperature variations. Process and temperature variation can cause ring based ILFD to loose lock in the desired operating band. The goal of this work is to make the ring based ILFDs useful for practical applications. Techniques to extend the locking range of the ILFDs are discussed. A novel and simple compensation technique is devised to compensate the ILFD and keep the locking range tight with process and temperature variations. The proposed ILFD is used in a 2.4-GHz frequency synthesizer that is optimized for fractional-N synthesis. Measurement results supporting the theory are provided

Integrated radio frequency synthetizers for wireless applications

This thesis consists of six publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis concentrates on the design of phase-locked loop radio frequency synthesizers for wireless applications. In particular, the focus is on the implementation of the prescaler, the phase detector, and the chargepump. This work reviews the requirements set for the frequency synthesizer by the wireless standards, and how these requirements are derived from the system specifications. These requirements apply to both integer-N and fractional-N synthesizers. The work also introduces the special considerations related to the design of fractional-N phase-locked loops. Finally, implementation alternatives for the different building blocks of the synthesizer are reviewed. The presented work introduces new topologies for the phase detector and the chargepump, and improved topologies for high speed CMOS prescalers. The experimental results show that the presented topologies can be successfully used in both integer-N and fractional-N synthesizers with state-of-the-art performance. The last part of this work discusses the additional considerations that surface when the synthesizer is integrated into a larger system chip. It is shown experimentally that the synthesizer can be successfully integrated into a complex transceiver IC without sacrificing the performance of the synthesizer or the transceiver.reviewe

Direct Digital Frequency Synthesizer Architecture for Wireless Communication in 90 NM CMOS Technology

Software radio is one promising field that can meet the demands for low cost, low power, and high speed electronic devices for wireless communication. At the heart of software radio is a programmable oscillator called a Direct Digital Synthesizer (DDS). DDS has the capabilities of rapid frequency hopping by digital software control while operating at very high frequencies and having sub-hertz resolution. Nevertheless, the digital-to-analog converter (DAC) and the read-only-memory (ROM) look-up table, building blocks of the DDS, prevent the DDS to be used in wireless communication because they introduce errors and noises to the DDS and their performances deteriorate at high speed. The DAC and ROM are replaced in this thesis by analog active filters that convert the square wave output of the phase accumulator directly into a sine wave. The proposed architecture operates with a reference clock of 9.09 GHz and can be fully-integrated in 90 nm CMOS technology