Methodology for standard cell compliance and detailed placement for triple patterning lithography

As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition

Layout Decomposition for Quadruple Patterning Lithography and Beyond

For next-generation technology nodes, multiple patterning lithography (MPL) has emerged as a key solution, e.g., triple patterning lithography (TPL) for 14/11nm, and quadruple patterning lithography (QPL) for sub-10nm. In this paper, we propose a generic and robust layout decomposition framework for QPL, which can be further extended to handle any general K-patterning lithography (K$>$4). Our framework is based on the semidefinite programming (SDP) formulation with novel coloring encoding. Meanwhile, we propose fast yet effective coloring assignment and achieve significant speedup. To our best knowledge, this is the first work on the general multiple patterning lithography layout decomposition.Comment: DAC'201

A High-Performance Triple Patterning Layout Decomposer with Balanced Density

Triple patterning lithography (TPL) has received more and more attentions from industry as one of the leading candidate for 14nm/11nm nodes. In this paper, we propose a high performance layout decomposer for TPL. Density balancing is seamlessly integrated into all key steps in our TPL layout decomposition, including density-balanced semi-definite programming (SDP), density-based mapping, and density-balanced graph simplification. Our new TPL decomposer can obtain high performance even compared to previous state-of-the-art layout decomposers which are not balanced-density aware, e.g., by Yu et al. (ICCAD'11), Fang et al. (DAC'12), and Kuang et al. (DAC'13). Furthermore, the balanced-density version of our decomposer can provide more balanced density which leads to less edge placement error (EPE), while the conflict and stitch numbers are still very comparable to our non-balanced-density baseline

Layout decomposition for triple patterning lithography

Nowadays the semiconductor industry is continuing to advance the limits of physics as the feature size of the chip keeps shrinking. Products of the 22 nm technology node are already available on the market, and there are many ongoing research studies for the 14/10 nm technology nodes and beyond. Due to the physical limitations, the traditional 193 nm immersion lithography is facing huge challenges in fabricating such tiny features. Several types of next-generation lithography techniques have been discussed for years, such as {\em extreme ultra-violet} (EUV) lithography, {\em E-beam direct write}, and {\em block copolymer directed self-assembly} (DSA). However, the source power for EUV is still an unresolved issue. The low throughput of E-beam makes it impractical for massive productions. DSA is still under calibration in research labs and is not ready for massive industrial deployment. Traditionally features are fabricated under single litho exposure. As feature size becomes smaller and smaller, single exposure is no longer adequate in satisfying the quality requirements. {\em Double patterning lithography} (DPL) utilizes two litho exposures to manufacture features on the same layer. Features are assigned to two masks, with each mask going through a separate litho exposure. With one more mask, the effective pitch is doubled, thus greatly enhancing the printing resolution. Therefore, DPL has been widely recognized as a feasible lithography solution in the sub-22 nm technology node. However, as the technology continues to scale down to 14/10 nm and beyond, DPL begins to show its limitations as it introduces a high number of stitches, which increases the manufacturing cost and potentially leads to functional errors of the circuits. {\em Triple pattering lithography} (TPL) uses three masks to print the features on the same layer, which further enhances the printing resolution. It is a natural extension for DPL with three masks available, and it is one of the most promising solutions for the 14/10 nm technology node and beyond. In this thesis, TPL decomposition for standard-cell-based designs is extensively studied. We proposed a polynomial time triple patterning decomposition algorithm which guarantees finding a TPL decomposition if one exists. For complex designs with stitch candidates, our algorithm is able to find a solution with the optimal number of stitches. For standard-cell-based designs, there are additional coloring constraints where the same type of cell should be fabricated following the same pattern. We proposed an algorithm that is guaranteed to find a solution when one exists. The framework of the algorithm is also extended to pattern-based TPL decompositions, where the cost of a decomposition can be minimized given a library of different patterns. The polynomial time TPL algorithm is further optimized in terms of runtime and memory while keeping the solution quality unaffected. We also studied the TPL aware detailed placement problem, where our approach is guaranteed to find a legal detailed placement satisfying TPL coloring constraints as well as minimizing the {\em half-perimeter wire length} (HPWL). Finally, we studied the problem of performance variations due to mask misalignment in {\em multiple patterning decompositions} (MPL). For advanced technology nodes, process variations (mainly mask misalignment) have significant influences on the quality of fabricated circuits, and often lead to unexpected power/timing degenerations. Mask misalignment would complicate the way of simulating timing closure if engineers do not understand the underlying effects of mask misalignment, which only exists in multiple patterning decompositions. We mathematically proved the worst-case scenarios of coupling capacitance incurred by mask misalignment in MPL decompositions. A graph model is proposed which is guaranteed to compute the tight upper bound on the worst-case coupling capacitance of any MPL decompositions for a given layout

Design automation algorithms for advanced lithography

In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lithography (193i) has reached its printability limit. To continue the scaling with Moore's law, different kinds of advanced lithography have been proposed, such as multiple patterning lithography (MPL), extreme ultraviolet (EUV), electron beam lithography (EBL) and directed self-assembly (DSA). While these new technologies create enormous opportunities, they also pose great design challenges due to their unique process characteristics and stringent constraints. In order to smoothly adopt these advanced lithography technologies in integrated circuit (IC) fabrication, effective electronic design automation (EDA) algorithms must be designed and integrated into computer-aided design (CAD) tools to address the underlying design constraints and help the circuit designer to better facilitate the lithography process. In this thesis, we focus on algorithmic design and efficient implementation of EDA algorithm for advanced lithography, including directed self-assembly (DSA) and self-aligned double patterning (SADP), to conquer the physical challenges and improve the manufacturing yield. The first advanced lithography technology we explore is self-aligned double patterning (SADP). SADP has the significant advantage over traditional litho-etch-litho-etch (LELE) double patterning in its ability to eliminate overlay, making it a preferable DPL choice for the 14 nm technology node. As in any DPL technology, layout decomposition is the key problem. While the layout decomposition problem for LELE DPL has been well studied in the literature, only a few attempts have been made for the SADP layout decomposition problem. This thesis studies the SADP decomposition problem in different scenarios. SADP has been successfully deployed in 1D patterns and has several applications; however, applying it to 2D patterns turns out to be much more difficult. All previous exact algorithms were based on computationally expensive methods such as SAT or ILP. Other previous algorithms were heuristics without a guarantee that an overlay-free solution can be found even if one exists. The SADP decomposition problem on general 2D layout is proven to be NP-complete. However, we show that if we restrict the overlay, the problem is polynomial-time solvable, and present an exact algorithm to determine if a given 2D layout has a no-overlay SADP decomposition. When designing the layout decomposition algorithms, it is usually useful to take the layout structure into consideration. As most of the current IC layouts adopt a row-based standard cell design style, we can take advantage of its characteristics and design more efficient algorithms compared to the algorithms for general 2D patterns. In particular, the fixed widths of standard cells and power tracks on top and bottom of cells suggest that improvements can be made over the algorithms for general decomposition problem. We present a shortest-path based polynomial time SADP decomposition algorithm for row-based standard cell layout that efficiently finds decompositions with minimum overlay violations. Our proposed algorithm takes advantage of the fixed width of the cells and the alternating power tracks between the rows to limit the possible decompositions and thus achieve high efficiency. The next advanced lithography technology we discuss in the thesis is directed self-assembly (DSA). Block copolymer directed self-assembly (DSA) is a promising technique for patterning contact holes and vias in 7 nm technology nodes. To pattern contacts/vias with DSA, guiding templates are usually printed first with conventional lithography (193i) that has a coarser pitch resolution. Contact holes are then patterned with DSA process. The guiding templates play the role of defining the DSA patterns, which have a finer resolution than the templates. As a result, different patterns can be obtained through controlling the templates. It is shown that DSA lithography is very promising in patterning contacts/vias in 7 nm technology node. However, to utilize DSA for full-chip manufacturing, EDA for DSA must be fully explored because EDA is the key enabler for manufacturing, and the EDA research for DSA is still lagging behind. To pattern the contact layer with DSA, we must ensure that all the contacts in the layout require only feasible DSA templates. Nevertheless, the original layout may not be designed in a DSA-friendly way. However, even with an optimized library, infeasible templates may be introduced after the physical design phase. We propose a simulated-annealing (SA) based scheme to perform full-chip level contact layer optimization. According to the experimental results, the DSA conflicts in the contact layer are reduced by close to 90% on average after applying the proposed optimization algorithm. It is a current trend that industry is transiting from the random 2D designs to highly regular 1D gridded designs for sub-20 nm nodes and fabricating circuit designs with print-cut technology. In this process, the randomly distributed cuts may be too dense to be printed by single patterning lithography. DSA has proven its success in contact hole patterning, and can be easily expanded to cut printing for 1D gridded designs. Nevertheless, the irregular distribution of cuts still presents a great challenge for DSA, as the self-assembly process usually forms regular patterns. As a result, the cut layer must be optimized for the DSA process. To address the above problem, we propose an efficient algorithm to optimize cut layers without hurting the original circuit logic. Our work utilizes a technique called `line-end extension' to move the cuts and extend the functional wires without changing the original functionality of the circuit. Consequently, the cuts can be redistributed and grouped into valid DSA templates. Multiple patterning lithography has been widely adopted for today's circuit manufacturing. However, increasing the number of masks will make the manufacturing process more expensive. By incorporating DSA into the multiple patterning process, it is possible to reduce the number of masks and achieve a cost-effective solution. We study the decomposition problem for the contact layer in row-based standard cell layout with DSA-MP complementary lithography. We explore several heuristic-based approaches, and propose an algorithm that decomposes a standard cell row optimally in polynomial-time. Our experiments show that our algorithm is guaranteed to find a minimum cost solution if one exists, while the heuristic cannot or only finds a sub-optimal solution. Our results show that the DSA-MP complementary approach is very promising for the future advanced nodes. As in any lithography technique, the process variation control and proximity correction are the most important issues. As the DSA templates are patterned by conventional lithography, the patterned templates are prone to deviate from mask shapes due to process variations, which will ultimately affect the contacts after the DSA process even for the same type of template. Therefore, in order to enable the DSA technology in contact/via layer printing, it is extremely important to accurately model and detect hotspots, as well as estimate the contact pitch and locations during the verification phase. We propose a machine learning based design automation framework for DSA verification. A novel DSA model and a set of features are included. We implemented the proposed ML-based flow and performed extensive experiments on comparing the performances of learning algorithms and features. The experimental results show that our approach is much more efficient than the traditional approach, and can produce highly accurate results

Algorithms for DFM in electronic design automation

As the dimension of features in integrated circuits (IC) keeps shrinking to fulfill Moore’s law, the manufacturing process has no choice but confronting the limit of physics at the expense of design flexibility. On the other hand, IC designs inevitably becomes more complex to meet the increasing demand of computational power. To close this gap, design for manufacturing (DFM) becomes the key to enable an easy and low-cost IC fabrication. Therefore, efficient electronic design automation (EDA) algorithms must be developed for DFM to address the design constraints and help the designers to better facilitate the manufacture process. As the core of manufacturing ICs, conventional lithography systems (193i) reach their limit for the 22 nm technology node and beyond. Consequently, several advanced lithography techniques are proposed, such as multiple patterning lithography (MPL), extreme ultra-violet lithography (EUV), electron beam (E-beam), and block copolymer directed self-assembly (DSA); however, DFM algorithms are essential for them to achieve better printability of a design. In this dissertation, we focus on analyzing the compatibility of designs and various advanced lithography techniques, and develop efficient algorithms to enable the manufacturing. We first explore E-Beam, one of the promising candidates for IC fabrication beyond the 10 nm technology node. To address its low throughput issue, the character projection technique has been proposed, and its stencil planning can be optimized with an awareness of overlapping characters. 2D stencil planning is proved NP-Hard. With the assumption of standard cells, the 2D problem can be partitioned into 1D row ordering subproblems; however, it is also considered hard, and no efficient optimal solution has been provided so far. We propose a polynomial time optimal algorithm to solve the 1D row ordering problem, which serves as the major subroutine for the entire stencil planning problem. Technical proofs and experimental results verify that our algorithm is efficient and indeed optimal. As the most popular and practical lithography technique, MPL utilizes multiple exposures to print a single layout and thus allows placement of features within the minimum distance. Therefore, a feasible decomposition of the layout is a must to adopt MPL, and it is usually formulated as a graph k-coloring problem, which is computationally difficult for k > 2. We study the k-colorability of rectangular and diagonal grid graphs as induced subgraphs of a rectangular or diagonal grid respectively, since it has direct applications in printing contact/via layouts. It remains an open question on how hard it is to color grid graphs due to their regularity and sparsity. In this dissertation, we conduct a complete analysis of the k-coloring problems on rectangular and diagonal grid graphs, and particularly the NP-completeness of 3-coloring on a diagonal grid graph is proved. In practice, we propose an exact 3-coloring algorithm for those graphs and conduct experiments to verify its performance and effectiveness. Besides, we also develop an efficient algorithm for model based MPL, because it is more expensive but accurate than the rule based decomposition. As one of the alternative lithography techniques, block copolymer directed self-assembly (DSA) is studied. It has emerged as a low-cost, high- throughput option in the pursuit of alternatives to traditional optical lithography. However, issues of defectivity have hampered DSA’s viability for large-scale patterning. Recent studies have shown the copolymer fill level to be a crucial factor in defectivity, as template overfill can result in malformed DSA structures and poor LCDU after etching. For this reason, the use of sub-DSA resolution assist features (SDRAFs) as a method of evening out template density has been demonstrated. In this dissertation, we propose an algorithm to place SDRAFs in random logic contact/via layouts. By adopting this SDRAF placement scheme, we can significantly improve the density unevenness and the resources used are also optimized. We also apply our knowledge in coloring grid graphs to the problem of group-and-coloring in DSA-MPL hybrid lithography. We derive a solution to group-3-coloring and prove the NP-completeness of grouping-2-coloring

VLSI Routing for Advanced Technology

Routing is a major step in VLSI design, the design process of complex integrated circuits (commonly known as chips). The basic task in routing is to connect predetermined locations on a chip (pins) with wires which serve as electrical connections. One main challenge in routing for advanced chip technology is the increasing complexity of design rules which reflect manufacturing requirements. In this thesis we investigate various aspects of this challenge. First, we consider polygon decomposition problems in the context of VLSI design rules. We introduce different width notions for polygons which are important for width-dependent design rules in VLSI routing, and we present efficient algorithms for computing width-preserving decompositions of rectilinear polygons into rectangles. Such decompositions are used in routing to allow for fast design rule checking. A main contribution of this thesis is an O(n) time algorithm for computing a decomposition of a simple rectilinear polygon with n vertices into O(n) rectangles, preseverving two-dimensional width. Here the two-dimensional width at a point of the polygon is defined as the edge length of a largest square that contains the point and is contained in the polygon. In order to obtain these results we establish a connection between such decompositions and Voronoi diagrams. Furthermore, we consider implications of multiple patterning and other advanced design rules for VLSI routing. The main contribution in this context is the detailed description of a routing approach which is able to manage such advanced design rules. As a main algorithmic concept we use multi-label shortest paths where certain path properties (which model design rules) can be enforced by defining labels assigned to path vertices and allowing only certain label transitions. The described approach has been implemented in BonnRoute, a VLSI routing tool developed at the Research Institute for Discrete Mathematics, University of Bonn, in cooperation with IBM. We present experimental results confirming that a flow combining BonnRoute and an external cleanup step produces far superior results compared to an industry standard router. In particular, our proposed flow runs more than twice as fast, reduces the via count by more than 20%, the wiring length by more than 10%, and the number of remaining design rule errors by more than 60%. These results obtained by applying our multiple patterning approach to real-world chip instances provided by IBM are another main contribution of this thesis. We note that IBM uses our proposed combined BonnRoute flow as the default tool for signal routing