Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.status: publishe

Wake-Up Transceiver Architectures with Novel Symbol Time Synchronization Schemes for ElectroMagnetic NanoNetworks

Projecte final de carrera fet en col.laboració amb Georgia Institute of TechnologyEnglish: The work we present on this thesis covers unresolved PHY-Layer topics for Electromagnetic Nanonetworks that covers the transceiver architecture, frequency estimation for symbol synchronization and a wake-up receiver module for node synchronziation. Solving these PHY-Layer topics leads to stablish a base to propose and design network protocols on top of a well-defined architecture.Castellano: El trabajo que se presenta en este proyecto cubre temas de capa física no resueltos para Electromagnetic Nanonetworks. Se propone una arquitectura de transceiver, la estimación de frecuencia para la sincronización del tiempo de símbolo y además se propone un modulo wake-up para sincronización entre nodos. Solucionar estos temas de capa física propone establecer una base para el diseño de futuros protocols de redes diseñados sobre bajo dichas consideracionesCatalà: El traball presentat cobreix temes de capa física no resolts per a Electromagnetic Nanonetworks. Es proposa una arquitectura de transceiver, una estimació de freqüència per a la sincronització del temps de símbol i un mòdul wake-up per a sincronització entre nodes. Donant solució a aquests temes de capa física permet establir una base per al diseny de futurs protocols de xarxes dissenyats sota aquestes consideracions

Design, Characterization And Analysis Of Electrostatic Discharge (esd) Protection Solutions In Emerging And Modern Technologies

Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices’ operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal–oxide–semiconductor (CMOS) technologies. The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs iv subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diodetriggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on time, and overshoot voltage. The advantages and drawbacks of each layout are summarized and those offering the best overall performance are suggested at the en

Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing

For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials science, electronics, optics, and biology at the nanoscale. Notably, nanowire building blocks with precise control of size, structure, morphology, and even composition in one, two, and three dimensions can successfully demonstrate high-performance electrical characteristics of field-effect transistors (FETs) and highly sensitive, selective, label-free, real-time biosensors in the fields of nanoelectronics and nano-biosensing, respectively. This thesis has focused on the design, synthesis, assembly, fabrication and electrical characterization of nanowire heterostructures for a proof-of-concept nanoprocessor and morphology-modulated kinked nanowire molecular nanosensor.Physic

Design of Front End Electronics and a Full Scale 4k Pixel Readout ASIC for the DSSC X-ray Detector at the European XFEL

The goal of this thesis was to design a large scale readout ASIC for the 1-Mega pixel DEPFET Sensor with Signal Compression (DSSC) detector system which is being developed by an international collaboration for the European XFEL (EuXFEL). Requirements for the DSSC detector include single photon detection down to 0.5 keV combined with a large dynamic range of up to 10000 photons at frame rates of up to 4.5 MHz. The detector core concepts include full parallel readout, signal compression on the sensor or ASIC level, filtering, immediate digitization and local storage within the pixel. The DSSC is a hybrid pixel detector, each sensor pixel mates to a dedicated ASIC pixel, which includes the entire specified signal processing chain along with auxiliary circuits. One ASIC comprises 4096 pixels and a full periphery including biasing and digital control. This thesis presents the design of the ASIC, its components and integration are decribed in detail. Emphasis is put on the design of the analog front-end. The first full format ASIC (F1) has been fabricated within the scope of this thesis along with numerous test chips. Furthermore, the EuXFEL and the DSSC detector system are presented to create the context for the ASIC, which is the core topic of this thesis

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Nanomechanical Resonators: Toward Atomic Scale

The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to new grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes, and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained efforts have been devoted to creating mechanical devices toward the ultimate limit of miniaturization— genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines

Nanomechanical Resonators: Toward Atomic Scale

The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/ phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization--genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines