A GHz-range, High-resolution Multi-modulus Prescaler for Extreme Environment Applications

The generation of a precise, low-noise, reliable clock source is critical to developing mixed-signal and digital electronic systems. The applications of such a clock source are greatly expanded if the clock source can be configured to output different clock frequencies. The phase-locked loop (PLL) is a well-documented architecture for realizing this configurable clock source. Principle to the configurability of a PLL is a multi-modulus divider. The resolution of this divider (or prescaler) dictates the resolution of the configurable PLL output frequency. In integrated PLL designs, such a multi-modulus prescaler is usually sourced from a GHz-range voltage-controlled oscillator. Therefore, a fully-integrated PLL ASIC requires the development of a high-speed, high-resolution multi-modulus prescaler. The design challenges associated with developing such a prescaler are compounded when the application requires the device to operate in an extreme environment. In these extreme environments (often extra-terrestrial), wide temperature ranges and radiation effects can adversely affect the operation of electronic systems. Even more problematic is that extreme temperatures and ionizing radiation can cause permanent damage to electronic devices. Typical commercial-off-the-shelf (COTS) components are not able withstand such an environment, and any electronics operating in these extreme conditions must be designed to accommodate such operation. This dissertation describes the development of a high-speed, high-resolution, multi-modulus prescaler capable of operating in an extreme environment. This prescaler has been developed using current-mode logic (CML) on a 180-nm silicon-germanium (SiGe) BiCMOS process. The prescaler is capable of operating up to at least 5.4 GHz over a division range of 16-48 with a total of 27 configurable moduli. The prescaler is designed to provide excellent ionizing radiation hardness, single-event latch-up (SEL) immunity, and single-event upset (SEU) resistance over a temperature range of −180°C to 125°C

Integrated radio frequency synthetizers for wireless applications

This thesis consists of six publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis concentrates on the design of phase-locked loop radio frequency synthesizers for wireless applications. In particular, the focus is on the implementation of the prescaler, the phase detector, and the chargepump. This work reviews the requirements set for the frequency synthesizer by the wireless standards, and how these requirements are derived from the system specifications. These requirements apply to both integer-N and fractional-N synthesizers. The work also introduces the special considerations related to the design of fractional-N phase-locked loops. Finally, implementation alternatives for the different building blocks of the synthesizer are reviewed. The presented work introduces new topologies for the phase detector and the chargepump, and improved topologies for high speed CMOS prescalers. The experimental results show that the presented topologies can be successfully used in both integer-N and fractional-N synthesizers with state-of-the-art performance. The last part of this work discusses the additional considerations that surface when the synthesizer is integrated into a larger system chip. It is shown experimentally that the synthesizer can be successfully integrated into a complex transceiver IC without sacrificing the performance of the synthesizer or the transceiver.reviewe

A Low-Power BFSK/OOK Transmitter for Wireless Sensors

In recent years, significant improvements in semiconductor technology have allowed consistent development of wireless chipsets in terms of functionality and form factor. This has opened up a broad range of applications for implantable wireless sensors and telemetry devices in multiple categories, such as military, industrial, and medical uses. The nature of these applications often requires the wireless sensors to be low-weight and energy-efficient to achieve long battery life. Among the various functions of these sensors, the communication block, used to transmit the gathered data, is typically the most power-hungry block. In typical wireless sensor networks, transmission range is below 10 meters and required radiated power is below 1 milliwatt. In such cases, power consumption of the frequency-synthesis circuits prior to the power amplifier of the transmitter becomes significant. Reducing this power consumption is currently the focus of various research endeavors. A popular method of achieving this goal is using a direct-modulation transmitter where the generated carrier is directly modulated with baseband data using simple modulation schemes. Among the different variations of direct-modulation transmitters, transmitters using unlocked digitally-controlled oscillators and transmitters with injection or resonator-locked oscillators are widely investigated because of their simple structure. These transmitters can achieve low-power and stable operation either with the help of recalibration or by sacrificing tuning capability. In contrast, phase-locked-loop-based (PLL) transmitters are less researched. The PLL uses a feedback loop to lock the carrier to a reference frequency with a programmable ratio and thus achieves good frequency stability and convenient tunability. This work focuses on PLL-based transmitters. The initial goal of this work is to reduce the power consumption of the oscillator and frequency divider, the two most power-consuming blocks in a PLL. Novel topologies for these two blocks are proposed which achieve ultra-low-power operation. Along with measured performance, mathematical analysis to derive rule-of-thumb design approaches are presented. Finally, the full transmitter is implemented using these blocks in a 130 nanometer CMOS process and is successfully tested for low-power operation

Phase Noise in CMOS Phase-Locked Loop Circuits

Phase-locked loops (PLLs) have been widely used in mixed-signal integrated circuits. With the continuously increasing demand of market for high speed, low noise devices, PLLs are playing a more important role in communications. In this dissertation, phase noise and jitter performances are investigated in different types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: voltage-controlled oscillator, frequency divider, phase-frequency detector, loop filter and auxiliary input reference clock. A linear time invariant model with additive noise sources in frequency domain is presented to analyze the phase noise. The modeled phase noise results are compared with the corresponding experimentally measured results on phase-locked loop chips fabricated in 0.5 m n-well CMOS process. With the scaling of CMOS technology and the increase of electrical field, MOS transistors have become very sensitive to hot carrier effect (HCE) and negative bias temperature instability (NBTI). These two reliability issues pose challenges to designers for designing of chips in deep submicron CMOS technologies. A new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The switchable PLL which integrates two phase-locked loops with different tuning frequencies are designed and fabricated in 0.5 µm CMOS process to analyze the effects under HCE and NBTI. A 3V 1.2 GHz programmable phase-locked loop frequency synthesizer is designed in 0.5 μm CMOS technology. The frequency synthesizer is implemented using LC voltage-controlled oscillator (VCO) and a low power dual-modulus prescaler. The LC VCO working range is from 900MHz to 1.4GHz. Current mode logic (CML) is used in designing high speed D flip-flop in the dual-modulus prescaler circuits for low power consumption. The power consumption of the PLL chip is under 30mW. Fully differential LC VCO is used to provide high oscillation frequency. A new design of LC VCO using carbon nanotube (CNT) wire inductor has been proposed. The PLL design using CNT-LC VCO shows significant improvement in phase noise due to high-Q LC circuit

Power-efficient high-speed interface circuit techniques

Inter- and intra-chip connections have become the new challenge to enable the scaling of computing systems, ranging from mobile devices to high-end servers. Demand for aggregate I/O bandwidth has been driven by applications including high-speed ethernet, backplane micro-servers, memory, graphics, chip-to-chip and network onchip. I/O circuitry is becoming the major power consumer in SoC processors and memories as the increasing bandwidth demands larger per-pin data rate or larger I/O pin count per component. The aggregate I/O bandwidth has approximately doubled every three to four years across a diverse range of standards in different applications. However, in order to keep pace with these standards enabled in part by process-technology scaling, we will require more than just device scaling in the near future. New energy-efficient circuit techniques must be proposed to enable the next generations of handheld and high-performance computers, given the thermal and system-power limits they start facing. ^ In this work, we are proposing circuit architectures that improve energy efficiency without decreasing speed performance for the most power hungry circuits in high speed interfaces. By the introduction of a new kind of logic operators in CMOS, called implication operators, we implemented a new family of high-speed frequency dividers/prescalers with reduced footprint and power consumption. New techniques and circuits for clock distribution, for pre-emphasis and for driver at the transmitter side of the I/O circuitry have been proposed and implemented. At the receiver side, new DFE architecture and CDR have been proposed and have been proven experimentally

A Low Voltage Delta-Sigma Fractional Frequency Divider for Multi-band WSN Frequency Synthesizers

A 1 V low voltage delta-sigma fractional-N frequency divider for multi-band (780/868/915 MHz and 2.4 GHz) WSN frequency synthesizers is presented. The frequency divider consists of a dual-modulus prescaler, a pulse-swallow counter and a delta-sigma modulator. The high-speed and low-voltage phase-switching dual-modulus prescaler is used in the frequency divider. Low threshold voltage transistors are applied to overcome low voltage supply and forward phase-switching technique is adopted to prevent glitches. The modified delta-sigma modulator with long output sequence length and less spurs is adopted to minimize the fractional spurs. The frequency divider is designed in 0.18 mm TSMC RF CMOS technology under 1 V supply instead of the standard 1.8 V supply. The total chip area is 1190 mm 485 mm including I/O pads. The post simulation results show the frequency divider operates normally over a wide range of 1.3-5.0 GHz and the core circuit (without test buffers) consumes 2.3 mW

Low phase noise 2 GHz Fractional-N CMOS synthesizer IC

Low noise low division 2 GHz RF synthesizer integrated circuits (ICs) are conventionally implemented in some form of HBT process such as SiGe or GaAs. The research in this dissertation differs from convention, with the aim of implementing a synthesizer IC in a more convenient, low-cost Si-based CMOS process. A collection of techniques to push towards the noise and frequency limits of CMOS processes, and possibly other IC processes, is then one of the research outcomes. In a synthesizer low N-divider ratios are important, as high division ratios would amplify in-band phase noise. The design methods deployed as part of this research achieve low division ratios (4 ≤ N ≤ 33) and a high phase comparison frequency (>100 MHz). The synthesizer IC employs a first-order fractional-N topology to achieve increased frequency tuning resolution. The primary N-divider was implemented utilising current mode logic (CML) and the fractional accumulator utilising conventional CMOS. Both a conventional CMOS phase frequency detector (PFD) and a CML PFD were implemented for benchmarking purposes. A custom-built 4.4 GHz synthesizer circuit employing the IC was used to validate the research. In the 4.4 GHz synthesizer circuit, the prototype IC achieved a measured in-band phase noise plateau of L( f ) = -113 dBc/Hz at a 100 kHz frequency offset, which equates to a figure of merit (FOM) of -225 dBc/Hz. The FOM compares well with existing, but expensive, SiGe and GaAs HBT processes. Total IC power dissipation was 710 mW, which is considerably less than commercially available GaAs designs. The complete synthesizer IC was implemented in Austriamicrosystems‟ (AMS) 0.35 μm CMOS process and occupies an area of 3.15 x 2.18 mm2.Dissertation (MEng)--University of Pretoria, 2010.Electrical, Electronic and Computer Engineeringunrestricte