Low power digitally controlled oscillator for IoT applications

This work is focused on the design of a Low Power CMOS DCO for IEEE 802.11ah in IoT applications. The design methodology is based on the Unified current-control model (UICM), which is a physics-based model and enables an accurate all-region model of the operation of the device. Additionally, a transformer-based resonator has been used to solve the low-quality factor issue of integrated inductors. Two digitally controlled oscillators (DCO) have been implemented to show the advantages of utilizing a transformedbased resonator and the methodology based on the UICM model. These designs aim for the operation in low voltage supply (VDD) since VDD scaling is a trend in systems-onchip (SoCs), in which the circuitry is mostly digital. Despite the degradation caused by VDD scaling, new RF and analog circuits must deliver similar performance of the older CMOS nodes. The first DCO design was a low power LC-tank DCO, implemented in 40nm bulk-CMOS. The first design presented a DCO operating at 45% of the nominal VDD without compromise the performance. By reducing the VDD below the nominal value, this DCO reduces power consumption, which is a crucial feature for IoT circuits. The main contribution of this first DCO is the reduction of VDD scaling impact on the phase-noise do the DCO. The LC-based DCO operates from 1.8 to 1.86 GHz. At the maximum frequency and 0.395V VDD, the power consumption is a mere 380 W with a phase-noise of -119.3 dBc/Hz at 1 MHz. The circuit occupies an area of 0.46mm2 in 40 nm CMOS, mostly due to the inductor. The second DCO design was a low-power transformer-based DCO design, implemented in 28nm bulk-CMOS. This second design aims for the VDD reduction to below 0.3 V. Operating in a frequency range similar to the LC-based DCO, the transformer-based DCO operated with 0.280V VDD with a power consumption of 97 W. Meanwhile, the phase-noise was -101.95 dBc/Hz at 1 MHz. Even in the worst-case scenario (i.e., slow-slow and 85oC), this second DCO was able to operate at 0.330V VDD, consuming 126 W, while it keeps a similar phase-noise performance of the typical case. The core circuit occupies an area of 0.364 mm2.Este trabalho objetiva o projeto de um DCO de baixa potência em CMOS para aplicações de IoT e aderentes ao padrão IEEE 802.11ah. A metodologia de projeto é baseada no modelo de controle de corrente unificado (UICM), que é um modelo com embasamento físico que permite uma operação precisa em todas as regiões de operação do dispositivo. Adicionalmente, é utilizado um ressonador baseado em transformador visando solucionar os problemas provenientes do baixo fator de qualidade de indutores integrados. Para destacar as melhorias obtidas com o projeto do ressonador baseado em transformador e com a metodologia baseada no modelo UICM, dois projetos de DCO são realizados. Esses projetos visam a operação com baixa tensão de alimentação (VDD), uma vez que o escalonamento do VDD é uma tendência em sistemas em chip (SoCs), em que o circuito é majoritariamente digital. Independente da degradação causada pelo escalonamento de VDD, circuitos analógicos e de RF atuais devem oferecer desempenho semelhante ao alcançado em tecnologias CMOS mais antigas. O primeiro projeto foi um DCO de baixa potência com tanque LC, implementado em tecnologia bulk-CMOS de 40nm. O primeiro projeto apresentou uma operação a 45% do VDD nominal sem comprometer o desempenho. Ao reduzir o VDD abaixo do valor nominal, este DCO reduz o consumo de energia, que é uma característica crucial para circuitos IoT. A principal contribuição deste DCO é a redução do impacto do escalonamento do VDD no ruído de fase. O DCO com tanque LC opera de 1,8 a 1,86 GHz. Na frequência máxima e com VDD de apenas 0,395V, o consumo de energia é 380 W e o ruído de fase é -119,3 dBc/Hz a 1 MHz. O circuito ocupa uma área de 0.46mm2 em processo CMOS de 40 nm. O segundo projeto foi um DCO de baixa potência baseado em transformador, implementado em tecnologia bulk- CMOS de 28nm. Este projeto visa a redução de VDD abaixo de 0,3 V. Operando em uma faixa de frequência semelhante ao primeiro DCO, o DCO baseado em transformador opera com VDD de 0,280V e com consumo de potência de 97 W. O ruído de fase foi de -101,95 dBc/Hz a 1 MHz. Mesmo no pior caso de processo, este DCO opera a um VDD de 0,330V, consumindo 126 W, com o ruído de fase semelhante ao caso típico. O circuito ocupa uma área de 0.364mm2

Clock Generator Circuits for Low-Power Heterogeneous Multiprocessor Systems-on-Chip

In this work concepts and circuits for local clock generation in low-power heterogeneous multiprocessor systems-on-chip (MPSoCs) are researched and developed. The targeted systems feature a globally asynchronous locally synchronous (GALS) clocking architecture and advanced power management functionality, as for example fine-grained ultra-fast dynamic voltage and frequency scaling (DVFS). To enable this functionality compact clock generators with low chip area, low power consumption, wide output frequency range and the capability for ultra-fast frequency changes are required. They are to be instantiated individually per core. For this purpose compact all digital phase-locked loop (ADPLL) frequency synthesizers are developed. The bang-bang ADPLL architecture is analyzed using a numerical system model and optimized for low jitter accumulation. A 65nm CMOS ADPLL is implemented, featuring a novel active current bias circuit which compensates the supply voltage and temperature sensitivity of the digitally controlled oscillator (DCO) for reduced digital tuning effort. Additionally, a 28nm ADPLL with a new ultra-fast lock-in scheme based on single-shot phase synchronization is proposed. The core clock is generated by an open-loop method using phase-switching between multi-phase DCO clocks at a fixed frequency. This allows instantaneous core frequency changes for ultra-fast DVFS without re-locking the closed loop ADPLL. The sensitivity of the open-loop clock generator with respect to phase mismatch is analyzed analytically and a compensation technique by cross-coupled inverter buffers is proposed. The clock generators show small area (0.0097mm2 (65nm), 0.00234mm2 (28nm)), low power consumption (2.7mW (65nm), 0.64mW (28nm)) and they provide core clock frequencies from 83MHz to 666MHz which can be changed instantaneously. The jitter performance is compliant to DDR2/DDR3 memory interface specifications. Additionally, high-speed clocks for novel serial on-chip data transceivers are generated. The ADPLL circuits have been verified successfully by 3 testchip implementations. They enable efficient realization of future low-power MPSoCs with advanced power management functionality in deep-submicron CMOS technologies.In dieser Arbeit werden Konzepte und Schaltungen zur lokalen Takterzeugung in heterogenen Multiprozessorsystemen (MPSoCs) mit geringer Verlustleistung erforscht und entwickelt. Diese Systeme besitzen eine global-asynchrone lokal-synchrone Architektur sowie Funktionalität zum Power Management, wie z.B. das feingranulare, schnelle Skalieren von Spannung und Taktfrequenz (DVFS). Um diese Funktionalität zu realisieren werden kompakte Taktgeneratoren benötigt, welche eine kleine Chipfläche einnehmen, wenig Verlustleitung aufnehmen, einen weiten Bereich an Ausgangsfrequenzen erzeugen und diese sehr schnell ändern können. Sie sollen individuell pro Prozessorkern integriert werden. Dazu werden kompakte volldigitale Phasenregelkreise (ADPLLs) entwickelt, wobei eine bang-bang ADPLL Architektur numerisch modelliert und für kleine Jitterakkumulation optimiert wird. Es wird eine 65nm CMOS ADPLL implementiert, welche eine neuartige Kompensationsschlatung für den digital gesteuerten Oszillator (DCO) zur Verringerung der Sensitivität bezüglich Versorgungsspannung und Temperatur beinhaltet. Zusätzlich wird eine 28nm CMOS ADPLL mit einer neuen Technik zum schnellen Einschwingen unter Nutzung eines Phasensynchronisierers realisiert. Der Prozessortakt wird durch ein neuartiges Phasenmultiplex- und Frequenzteilerverfahren erzeugt, welches es ermöglicht die Taktfrequenz sofort zu ändern um schnelles DVFS zu realisieren. Die Sensitivität dieses Frequenzgenerators bezüglich Phasen-Mismatch wird theoretisch analysiert und durch Verwendung von kreuzgekoppelten Taktverstärkern kompensiert. Die hier entwickelten Taktgeneratoren haben eine kleine Chipfläche (0.0097mm2 (65nm), 0.00234mm2 (28nm)) und Leistungsaufnahme (2.7mW (65nm), 0.64mW (28nm)). Sie stellen Frequenzen von 83MHz bis 666MHz bereit, welche sofort geändert werden können. Die Schaltungen erfüllen die Jitterspezifikationen von DDR2/DDR3 Speicherinterfaces. Zusätzliche können schnelle Takte für neuartige serielle on-Chip Verbindungen erzeugt werden. Die ADPLL Schaltungen wurden erfolgreich in 3 Testchips erprobt. Sie ermöglichen die effiziente Realisierung von zukünftigen MPSoCs mit Power Management in modernsten CMOS Technologien

A time-based approach for multi-GHz embedded mixed-signal characterization and measurement /

The increasingly more sophisticated systems that are nowadays implemented on a single chip are placing stringent requirements on the test industry. New test strategies, equipment, and methodologies need to be developed to sustain the constant increase in demand for consumer and communication electronics. Techniques for built-in-self-test (BIST) and design-for-test (DFT) strategies have been proven to offer more feasible and economical testing solutions.Previous works have been conducted to perform on-chip testing, characterization, and measurement of signals and components. The current thesis advances those techniques on many levels. In terms of performance, an increase of more than an order of magnitude in speed is achieved. 70-GHz (effective sampling) on-chip oscilloscope is reported, compared to 4-GHz and 10-GHz ones in previous state-of-the-art implementations. Power dissipation is another area where the proposed work offer a superior solution compared to previous alternatives. All the proposed circuits do not exceed a few milliWatts of power dissipation, while performing multi-GHz high-speed signal capture at a medium resolution. Finally, and possibly most importantly, all the proposed circuits for test rely on a different form of signal processing; the time-based approach. It is believed that this approach paves the path to a lot of new techniques and circuit design skills that can be investigated more deeply. As an integral part of the time-based processing approach for GHz signal capture, this thesis verifies the advantages of using time amplification. The use of such amplification in the time domain is materialized with experimental results from three specific integrated circuits achieving different tasks in GHz high-speed in-situ signal measurement and characterization. Advantages of using such time-based approach techniques, when combined with the use of a front-end time amplifier, include noise immunity, the use of synthesizable digital cells, and circuit building blocks that track the technology scaling in terms of area and speed

A high speed serializer/deserializer design

A Serializer/Deserializer (SerDes) is a circuit that converts parallel data into a serial stream and vice versa. It helps solve clock/data skew problems, simplifies data transmission, lowers the power consumption and reduces the chip cost. The goal of this project was to solve the challenges in high speed SerDes design, which included the low jitter design, wide bandwidth design and low power design. A quarter-rate multiplexer/demultiplexer (MUX/DEMUX) was implemented. This quarter-rate structure decreases the required clock frequency from one half to one quarter of the data rate. It is shown that this significantly relaxes the design of the VCO at high speed and achieves lower power consumption. A novel multi-phase LC-ring oscillator was developed to supply a low noise clock to the SerDes. This proposed VCO combined an LC-tank with a ring structure to achieve both wide tuning range (11%) and low phase noise (-110dBc/Hz at 1MHz offset). With this structure, a data rate of 36 Gb/s was realized with a measured peak-to-peak jitter of 10ps using 0.18microm SiGe BiCMOS technology. The power consumption is 3.6W with 3.4V power supply voltage. At a 60 Gb/s data rate the simulated peak-to-peak jitter was 4.8ps using 65nm CMOS technology. The power consumption is 92mW with 2V power supply voltage. A time-to-digital (TDC) calibration circuit was designed to compensate for the phase mismatches among the multiple phases of the PLL clock using a three dimensional fully depleted silicon on insulator (3D FDSOI) CMOS process. The 3D process separated the analog PLL portion from the digital calibration portion into different tiers. This eliminated the noise coupling through the common substrate in the 2D process. Mismatches caused by the vertical tier-to-tier interconnections and the temperature influence in the 3D process were attenuated by the proposed calibration circuit. The design strategy and circuits developed from this dissertation provide significant benefit to both wired and wireless applications

Robust sigma delta converters : and their application in low-power highly-digitized flexible receivers

In wireless communication industry, the convergence of stand-alone, single application transceiver IC’s into scalable, programmable and platform based transceiver ICs, has led to the possibility to create sophisticated mobile devices within a limited volume. These multi-standard (multi-mode), MIMO, SDR and cognitive radios, ask for more adaptability and flexibility on every abstraction level of the transceiver. The adaptability and flexibility of the receive paths require a digitized receiver architecture in which most of the adaptability and flexibility is shifted in the digital domain. This trend to ask for more adaptability and flexibility, but also more performance, higher efficiency and an increasing functionality per volume, has a major impact on the IP blocks such systems are built with. At the same time the increasing requirement for more digital processing in the same volume and for the same power has led to mainstream CMOS feature size scaling, leading to smaller, faster and more efficient transistors, optimized to increase processing efficiency per volume (smaller area, lower power consumption, faster digital processing). As wireless receivers is a comparably small market compared to digital processors, the receivers also have to be designed in a digitally optimized technology, as the processor and transceiver are on the same chip to reduce device volume. This asks for a generalized approach, which maps application requirements of complex systems (such as wireless receivers) on the advantages these digitally optimized technologies bring. First, the application trends are gathered in five quality indicators being: (algorithmic) accuracy, robustness, flexibility, efficiency, and emission, of which the last one is not further analyzed in this thesis. Secondly, using the quality indicators, it is identified that by introducing (or increasing) digitization at every abstraction level of a system, the advantages of modern digitally optimized technologies can be exploited. For a system on a chip, these abstraction levels are: system/application level, analog IP architecture level, circuit topology level and layout level. In this thesis, the quality indicators together with the digitization at different abstraction levels are applied to S¿ modulators. S¿ modulator performance properties are categorized into the proposed quality indicators. Next, it is identified what determines the accuracy, robustness, flexibility and efficiency of a S¿ modulator. Important modulator performance parameters, design parameter relations, and performance-cost relations are derived. Finally, several implementations are presented, which are designed using the found relations. At least one implementation example is shown for each level of digitization. At system level, a flexible (N)ZIF receiver architecture is digitized by shifting the ADC closer to the antenna, reducing the amount of analog signal conditioning required in front of the ADC, and shifting the re-configurability of such a receiver into the digital domain as much as possible. Being closer to the antenna, and because of the increased receiver flexibility, a high performance, multi-mode ADC is required. In this thesis, it is proven that such multi-mode ADCs can be made at low area and power consumption. At analog IP architecture level, a smarter S¿ modulator architecture is found, which combines the advantages of 1-bit and multi-bit modulators. The analog loop filter is partly digitized, and analog circuit blocks are replaced by a digital filter, leading to an area and power efficient design, which above all is very portable, and has the potential to become a good candidate for the ADC in multimode receivers. At circuit and layout level, analog circuits are designed in the same way as digital circuits are. Analog IP blocks are split up in analog unit cells, which are put in a library. For each analog unit cell, a p-cell layout view is created. Once such a library is available, different IP blocks can be created using the same unit cells and using the automatic routing tools normally used for digital circuits. The library of unit cells can be ported to a next technology very quickly, as the unit cells are very simple circuits, increasing portability of IP blocks made with these unit cells. In this thesis, several modulators are presented that are designed using this digital design methodology. A high clock frequency in the giga-hertz range is used to test technology speed. The presented modulators have a small area and low power consumption. A modulator is ported from a 65nm to a 45nm technology in one month without making changes to the unit cells, or IP architecture, proving that this design methodology leads to very portable designs. The generalized system property categorization in quality indicators, and the digitization at different levels of system design, is named the digital design methodology. In this thesis this methodology is successfully applied to S¿ modulators, leading to high quality, mixed-signal S¿ modulator IP, which is more accurate, more robust, more flexible and/or more efficient

Robust sigma delta converters : and their application in low-power highly-digitized flexible receivers

In wireless communication industry, the convergence of stand-alone, single application transceiver IC’s into scalable, programmable and platform based transceiver ICs, has led to the possibility to create sophisticated mobile devices within a limited volume. These multi-standard (multi-mode), MIMO, SDR and cognitive radios, ask for more adaptability and flexibility on every abstraction level of the transceiver. The adaptability and flexibility of the receive paths require a digitized receiver architecture in which most of the adaptability and flexibility is shifted in the digital domain. This trend to ask for more adaptability and flexibility, but also more performance, higher efficiency and an increasing functionality per volume, has a major impact on the IP blocks such systems are built with. At the same time the increasing requirement for more digital processing in the same volume and for the same power has led to mainstream CMOS feature size scaling, leading to smaller, faster and more efficient transistors, optimized to increase processing efficiency per volume (smaller area, lower power consumption, faster digital processing). As wireless receivers is a comparably small market compared to digital processors, the receivers also have to be designed in a digitally optimized technology, as the processor and transceiver are on the same chip to reduce device volume. This asks for a generalized approach, which maps application requirements of complex systems (such as wireless receivers) on the advantages these digitally optimized technologies bring. First, the application trends are gathered in five quality indicators being: (algorithmic) accuracy, robustness, flexibility, efficiency, and emission, of which the last one is not further analyzed in this thesis. Secondly, using the quality indicators, it is identified that by introducing (or increasing) digitization at every abstraction level of a system, the advantages of modern digitally optimized technologies can be exploited. For a system on a chip, these abstraction levels are: system/application level, analog IP architecture level, circuit topology level and layout level. In this thesis, the quality indicators together with the digitization at different abstraction levels are applied to S¿ modulators. S¿ modulator performance properties are categorized into the proposed quality indicators. Next, it is identified what determines the accuracy, robustness, flexibility and efficiency of a S¿ modulator. Important modulator performance parameters, design parameter relations, and performance-cost relations are derived. Finally, several implementations are presented, which are designed using the found relations. At least one implementation example is shown for each level of digitization. At system level, a flexible (N)ZIF receiver architecture is digitized by shifting the ADC closer to the antenna, reducing the amount of analog signal conditioning required in front of the ADC, and shifting the re-configurability of such a receiver into the digital domain as much as possible. Being closer to the antenna, and because of the increased receiver flexibility, a high performance, multi-mode ADC is required. In this thesis, it is proven that such multi-mode ADCs can be made at low area and power consumption. At analog IP architecture level, a smarter S¿ modulator architecture is found, which combines the advantages of 1-bit and multi-bit modulators. The analog loop filter is partly digitized, and analog circuit blocks are replaced by a digital filter, leading to an area and power efficient design, which above all is very portable, and has the potential to become a good candidate for the ADC in multimode receivers. At circuit and layout level, analog circuits are designed in the same way as digital circuits are. Analog IP blocks are split up in analog unit cells, which are put in a library. For each analog unit cell, a p-cell layout view is created. Once such a library is available, different IP blocks can be created using the same unit cells and using the automatic routing tools normally used for digital circuits. The library of unit cells can be ported to a next technology very quickly, as the unit cells are very simple circuits, increasing portability of IP blocks made with these unit cells. In this thesis, several modulators are presented that are designed using this digital design methodology. A high clock frequency in the giga-hertz range is used to test technology speed. The presented modulators have a small area and low power consumption. A modulator is ported from a 65nm to a 45nm technology in one month without making changes to the unit cells, or IP architecture, proving that this design methodology leads to very portable designs. The generalized system property categorization in quality indicators, and the digitization at different levels of system design, is named the digital design methodology. In this thesis this methodology is successfully applied to S¿ modulators, leading to high quality, mixed-signal S¿ modulator IP, which is more accurate, more robust, more flexible and/or more efficient

A Bang-Bang All-Digital PLL for Frequency Synthesis

abstract: Phase locked loops are an integral part of any electronic system that requires a clock signal and find use in a broad range of applications such as clock and data recovery circuits for high speed serial I/O and frequency synthesizers for RF transceivers and ADCs. Traditionally, PLLs have been primarily analog in nature and since the development of the charge pump PLL, they have almost exclusively been analog. Recently, however, much research has been focused on ADPLLs because of their scalability, flexibility and higher noise immunity. This research investigates some of the latest all-digital PLL architectures and discusses the qualities and tradeoffs of each. A highly flexible and scalable all-digital PLL based frequency synthesizer is implemented in 180 nm CMOS process. This implementation makes use of a binary phase detector, also commonly called a bang-bang phase detector, which has potential of use in high-speed, sub-micron processes due to the simplicity of the phase detector which can be implemented with a simple D flip flop. Due to the nonlinearity introduced by the phase detector, there are certain performance limitations. This architecture incorporates a separate frequency control loop which can alleviate some of these limitations, such as lock range and acquisition time.Dissertation/ThesisM.S. Electrical Engineering 201

High performance CMOS amplifier and phase-locked loop design

Low voltage, high speed and high linearity are three different aspects of the analog circuit performance that designers are trying to achieve. In this dissertation, three design projects targeting these different performance optimizations are introduced.;The first work is a design of a low voltage operational amplifier. In this work, a threshold voltage tuning technique for low voltage CMOS analog circuit design is presented. A 750mV operational amplifier using this technique was designed in a 0.5mum 5V CMOS process with Vtp ≈ -0.9V and Vtn ≈ 0.8V. The active area is 560mum x 760mum. It exhibits a 62dB DC gain and consumes 38muW of power. It works with supply voltages from 0.75V to 1V. Compared to its 5V counterpart consuming the same amount of current, it maintains nearly the same gain bandwidth product of 3.7MHz. This op amp is the FIRST strong inversion op amp that works at a supply voltage below the threshold voltage.;The second is a design of a high speed phase-locked loop for data recovery. A new non-sequential linear phase detector is introduced in this work. Most of the existing phase detectors for data recovery are based on state-machines. The performance of these structures deteriorates rapidly at higher frequencies because of the inadequate settling performance of the flip-flop used to form the state machine. The new phase detector has a speed advantage over the state-machine based designs because it is simple and easy to implement in CMOS technology. Using this phase detector, a PLL was designed in a 0.25mum CMOS process with an active area of 400mum x 290mum. Experimental results show it successfully locks to a 2.1Gbit/s pseudo-random data sequence at 2.3V. It is believed that the architecture is the fastest that has been introduced for data recovery applications.;The third work introduces the design of a highly-linear variable gain amplifier. It achieves high linearity with third harmonic distortion better than -60dB Vopp = 1V at 160MHz in a 0.25mum CMOS process. It has a precise gain step of 6.02dB that is controlled digitally. The linearity performance is achieved with a linearized open loop amplifier configuration. Similar performance could only be achieved using feedback configuration before

Time-based, Low-power, Low-offset 5-bit 1 GS/s Flash ADC Design in 65nm CMOS Technology

Low-power, medium resolution, high-speed analog-to-digital converters (ADCs) have always been important block which have abundant applications such as digital signal processors (DSP), imaging sensors, environmental and biomedical monitoring devices. This study presents a low power Flash ADC designed in nanometer complementary metal-oxide semiconductors (CMOS) technology. Time analysis on the output delay of the comparators helps to generate one more bit. The proposed technique reduced the power consumption and chip area substantially in comparison to the previous state-of-the-art work. The proposed ADC was developed in TSMC 65nm CMOS technology. The offset cancellation technique was embedded in the proposed comparator to decrement the static offset of the comparator. Moreover, one more bit was generated without using extra comparators. The proposed ADC achieved 4.1 bits ENOB at input Nyquist frequency. The simulated differential and integral non-linearity static tests were equal to +0.26/-0.17 and +0.22/-0.15, respectively. The ADC consumed 7.7 mW at 1 GHz sampling frequency, achieving 415 fJ/Convstep Figure of Merit (FoM)

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor