337 research outputs found

    Linear Operation of Switch-Mode Outphasing Power Amplifiers

    Get PDF
    Radio transceivers are playing an increasingly important role in modern society. The ”connected” lifestyle has been enabled by modern wireless communications. The demand that has been placed on current wireless and cellular infrastructure requires increased spectral efficiency however this has come at the cost of power efficiency. This work investigates methods of improving wireless transceiver efficiency by enabling more efficient power amplifier architectures, specifically examining the role of switch-mode power amplifiers in macro cell scenarios. Our research focuses on the mechanisms within outphasing power amplifiers which prevent linear amplification. From the analysis it was clear that high power non-linear effects are correctable with currently available techniques however non-linear effects around the zero crossing point are not. As a result signal processing techniques for suppressing and avoiding non-linear operation in low power regions are explored. A novel method of digital pre-distortion is presented, and conventional techniques for linearisation are adapted for the particular needs of the outphasing power amplifier. More unconventional signal processing techniques are presented to aid linearisation of the outphasing power amplifier, both zero crossing and bandwidth expansion reduction methods are designed to avoid operation in nonlinear regions of the amplifiers. In combination with digital pre-distortion the techniques will improve linearisation efforts on outphasing systems with dynamic range and bandwidth constraints respectively. Our collaboration with NXP provided access to a digital outphasing power amplifier, enabling empirical analysis of non-linear behaviour and comparative analysis of behavioural modelling and linearisation efforts. The collaboration resulted in a bench mark for linear wideband operation of a digital outphasing power amplifier. The complimentary linearisation techniques, bandwidth expansion reduction and zero crossing reduction have been evaluated in both simulated and practical outphasing test benches. Initial results are promising and indicate that the benefits they provide are not limited to the outphasing amplifier architecture alone. Overall this thesis presents innovative analysis of the distortion mechanisms of the outphasing power amplifier, highlighting the sensitivity of the system to environmental effects. Practical and novel linearisation techniques are presented, with a focus on enabling wide band operation for modern communications standards

    Nonlinear Characterization and Modeling of Radio-Frequency Devices and Power Amplifiers with Memory Effects

    Get PDF
    Despite the fast development of telecommunications systems experienced during the last two decades, much progress is expected in the coming years with the introduction of new solutions capable of delivering fast data-rates and ubiquitous connectivity. However, this development can only happen through the evolution of radio-frequency systems, which should be capable of working at high-power and high-speed. At the same time, the power dissipation of these systems should be minimized. In this dissertation, methods for the characterization and modeling of transistors and power amplifiers are presented, along with the necessary nonlinear measurements techniques. In particular, dynamic electrical effects, originated by the properties of the semiconductor materials and by the system configurations, are investigated. Consequently, these phenomena, which cannot be ignored to obtain the wanted performance, are empirically identified and included in models for Gallium Nitride (GaN) transistors and power amplifiers driven by a dynamic voltage supply

    Measurement techniques for the characterization of radio frequency gallium nitride devices and power amplifiers

    Get PDF
    The rapid growth of mobile telecommunications has fueled the development of the fifth generation (5G) of standards, aiming to achieve high data rates and low latency. These capabilities make use of new regions of spectrum, wider bandwidths and spectrally efficient modulations. The deployment of 5G relies on the development of radio-frequency (RF) technology with increased performance. The broadband operation at high-power and high-frequency conditions is particularly challenging for power amplifiers (PA) in transmission stages, which seek to concurrently maximize linearity and energy efficiency. The properties of Gallium Nitride (GaN) allow the realization of active devices with favorable characteristics in these applications. However, GaN high-electron mobility transistors (HEMTs) suffer from spurious effects such as trapping due to physical defects introduced during the HEMT growth process. Traps dynamically capture and release mobile charges depending on the applied voltages and temperature, negatively affecting the RF PA performance. This work focuses on the development of novel measurement techniques and setups to investigate trapping behavior of GaN HEMTs and PAs. At low-frequency (LF), charge dynamics is analyzed using pulsed current transient characterizations, identifying relevant time constants in state-of-the-art GaN technologies for 5G. Instead, at high-frequency, tailored methods and setups are used in order to measure trapping effects during the operation of HEMTs and PAs in RF modulated conditions. These RF characterizations emulate application-like regimes, possibly involving the control of the device’s output load termination. Therefore, an innovative wideband active load pull (WALP) setup is developed, using the acquisition capabilities of standard vector-network-analyzers. Moreover, the implications of performing error-vector-magnitude characterizations under wideband load pull conditions are studied. Finally, an efficient implementation of a modified-Volterra model for RF PAs is presented, making use of a custom vector-fitting algorithm to simplify the nonlinear memory operators and enable their realization in simulation environments

    Characterization and modelling of GaAs MESFETs in the design of nonlinear circuits

    Get PDF

    CEAS/AIAA/ICASE/NASA Langley International Forum on Aeroelasticity and Structural Dynamics 1999

    Get PDF
    These proceedings represent a collection of the latest advances in aeroelasticity and structural dynamics from the world community. Research in the areas of unsteady aerodynamics and aeroelasticity, structural modeling and optimization, active control and adaptive structures, landing dynamics, certification and qualification, and validation testing are highlighted in the collection of papers. The wide range of results will lead to advances in the prediction and control of the structural response of aircraft and spacecraft

    RF techniques for IEEE 802.15.4: circuit design and device modelling

    Get PDF
    The RF circuitry in the physical layer of any wireless communication node is arguably its most important part. The front-end radio is the hardware that enables communication by transmitting and receiving information. Without a robust and high performance front-end, all other higher layers of signal processing and data handling in a wireless network are irrelevant. This thesis investigates the radio circuitry of wireless-networked nodes, and introduces several proposals for improvement. As an emerging market, analysis starts by examining available and ratified network standards suitable for low power applications. After identifying the IEEE 802.15.4 standard (commercially known as ZigBee) as the one of choice, and analysing several front-end architectures on which its transceiver circuitry can be based, an application, the Tyre Pressure Monitoring System (TPMS) is selected to examine the capabilities of the standard and its most suitable architecture in satisfying the application’s requirements. From this compatibility analysis, the most significant shortcomings are identified as interference and power consumption. The work presented in this thesis focuses on the power consumption issues. A comparison of available high frequency transistor technologies concludes Silicon CMOS to be the most appropriate solution for the implementation of low cost and low power ZigBee transceivers. Since the output power requirement of ZigBee is relatively modest, it is possible to consider the design of a single amplifier block which can act as both a Low Noise Amplifier (LNA) in the receiver chain and a Power Amplifier (PA) on the transmitter side. This work shows that by employing a suitable design methodology, a single dual-function amplifier can be realised which meets the required performance specification. In this way, power consumption and chip area can both be reduced, leading to cost savings so vital to the widespread utilisation of the ZigBee standard. Given the importance of device nonlinearity in such a design, a new transistor model based on independent representation of each of the transistor’s nonlinear elements is developed with the aim of quantifying the individual contribution of each of the transistors nonlinear elements, to the total distortion. The methodology to the design of the dual functionality (LNA/PA) amplifier starts by considering various low noise amplifier architectures and comparing them in terms of the trade-off between noise (required for LNA operation) and linearity (important for PA operation), and then examining the behaviour of the selected architecture (the common-source common-gate cascode) at higher than usual input powers. Due to the need to meet the far apart performance requirements of both the LNA and PA, a unique amplifier design methodology is developed The design methodology is based on simultaneous graphical visualisation of the relationship between all relevant performance parameters and corresponding design parameters. A design example is then presented to demonstrate the effectiveness of the methodology and the quality of trade-offs it allows the designer to make. The simulated performance of the final amplifier satisfies both the requirements of ZigBee’s low noise and power amplification. At 2.4GHz, the amplifier is predicted to have 1.6dB Noise Figure (NF), 6dBm Input-referred 3rd-order Intercept Point (IIP3), and 1dB compression point of -3.5dBm. In low power operation, it is predicted to have 10dB gain, consuming only 8mW. At the higher input power of 0dBm, it is predicted to achieve 24% Power-Added Efficiency (PAE) with 8dB gain and 22mW power consumption. Finally, this thesis presents a set of future research proposals based on problems identified throughout its development
    • 

    corecore