A Versatile Active Block: DXCCCII and Tunable Applications

The study describes dual-X controlled current conveyor (DXCCCII) as a versatile active block and its application to inductance simulators for testing. Moreover, the high pass filter application using with DXCCCII based inductance simulator and oscillator with flexible tunable oscillation frequency have been presented and simulated to confirm the theoretical validity. The proposed circuit which has a simple circuit design requires the low-voltage and the DXCCCII can also be tuned in the wide range by the biasing current. The proposed DXCCCII provides a good linearity, high output impedance at Z terminals, and a reasonable current and voltage transfer gain accuracy. The proposed DXCCCII and its applications have been simulated using the CMOS 0.18 µm technology

A precise 90º quadrature OTA-C oscillator tunable in the 50-130-MHz range

We present a very-large-scale integration continuous-time sinusoidal operational transconductance amplifiers quadrature oscillator fabricated in a standard double-poly 0.8-μm CMOS process. The oscillator is tunable in the frequency range from 50 to 130 MHz. The two phases produced by the oscillator show a low-quadrature phase error. A novel current-mode amplitude control scheme is developed that allows for very small amplitudes. Stability of the amplitude control loop is studied as well as design considerations for its optimization. Experimental results are provided

Novel active function blocks and their applications in frequency filters and quadrature oscillators

Kmitočtové filtry a sinusoidní oscilátory jsou lineární elektronické obvody, které jsou používány v široké oblasti elektroniky a jsou základními stavebními bloky v analogovém zpracování signálu. V poslední dekádě pro tento účel bylo prezentováno velké množství stavebních funkčních bloků. V letech 2000 a 2006 na Ústavu telekomunikací, VUT v Brně byly definovány univerzální proudový konvejor (UCC) a univerzální napět'ový konvejor (UVC) a vyrobeny ve spolupráci s firmou AMI Semiconductor Czech, Ltd. Ovšem, stále existuje požadavek na vývoj nových aktivních prvků, které nabízejí nové výhody. Hlavní přínos práce proto spočívá v definici dalších původních aktivních stavebních bloků jako jsou differential-input buffered and transconductance amplifier (DBTA), current follower transconductance amplifier (CFTA), z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), generalized current follower differential input transconductance amplifier (GCFDITA), voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), a minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Pomocí navržených aktivních stavebních bloků byly prezentovány původní zapojení fázovacích článků prvního řádu, univerzální filtry druhého řádu, ekvivalenty obvodu typu KHN, inverzní filtry, aktivní simulátory uzemněného induktoru a kvadraturní sinusoidní oscilátory pracující v proudovém, napět'ovém a smíšeném módu. Chování navržených obvodů byla ověřena simulací v prostředí SPICE a ve vybraných případech experimentálním měřením.Frequency filters and sinusoidal oscillators are linear electric circuits that are used in wide area of electronics and also are the basic building blocks in analogue signal processing. In the last decade, huge number of active building blocks (ABBs) were presented for this purpose. In 2000 and 2006, the universal current conveyor (UCC) and the universal voltage conveyor (UVC), respectively, were designed at the Department of Telecommunication, BUT, Brno, and produced in cooperation with AMI Semiconductor Czech, Ltd. There is still the need to develop new active elements that offer new advantages. The main contribution of this thesis is, therefore, the definition of other novel ABBs such as the differential-input buffered and transconductance amplifier (DBTA), the current follower transconductance amplifier (CFTA), the z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), the generalized current follower differential input transconductance amplifier (GCFDITA), the voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), and the minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Using the proposed ABBs, novel structures of first-order all-pass filters, second-order universal filters, KHN-equivalent circuits, inverse filters, active grounded inductance simulators, and quadrature sinusoidal oscillators working in the current-, voltage-, or mixed-mode are presented. The behavior of the proposed circuits has been verified by SPICE simulations and in selected cases also by experimental measurements.

Voltage-Mode Multifunction Biquadratic Filters Using New Ultra-Low-Power Differential Difference Current Conveyors

This paper presents two low-power voltage-mode multifunction biquadratic filters using differential difference current conveyors. Each proposed circuit employs three differential difference current conveyors, two grounded capacitors and two grounded resistors. The low-voltage ultra-low-power differential difference current conveyor is used to provide low-power consumption of the proposed filters. By appropriately connecting the input and output terminals, the proposed filters can provide low-pass, band-pass, high-pass, band-stop and all-pass voltage responses at high-input terminals, which is a desirable feature for voltage-mode operations. The natural frequency and the quality factor can be orthogonally set by adjusting the circuit components. For realizing all the filter responses, no inverting-type input signal requirements as well as no component-matching conditional requirements are imposed. The incremental parameter sensitivities are also low. The characteristics of the proposed circuits are simulated by using PSPICE simulators to confirm the presented theory

An Optoelectronic Stimulator for Retinal Prosthesis

Retinal prostheses require the presence of viable population of cells in the inner retina. Evaluations of retina with Age-Related Macular Degeneration (AMD) and Retinitis Pigmentosa (RP) have shown a large number of cells remain in the inner retina compared with the outer retina. Therefore, vision loss caused by AMD and RP is potentially treatable with retinal prostheses. Photostimulation based retinal prostheses have shown many advantages compared with retinal implants. In contrary to electrode based stimulation, light does not require mechanical contact. Therefore, the system can be completely external and not does have the power and degradation problems of implanted devices. In addition, the stimulating point is flexible and does not require a prior decision on the stimulation location. Furthermore, a beam of light can be projected on tissue with both temporal and spatial precision. This thesis aims at fi nding a feasible solution to such a system. Firstly, a prototype of an optoelectronic stimulator was proposed and implemented by using the Xilinx Virtex-4 FPGA evaluation board. The platform was used to demonstrate the possibility of photostimulation of the photosensitized neurons. Meanwhile, with the aim of developing a portable retinal prosthesis, a system on chip (SoC) architecture was proposed and a wide tuning range sinusoidal voltage-controlled oscillator (VCO) which is the pivotal component of the system was designed. The VCO is based on a new designed Complementary Metal Oxide Semiconductor (CMOS) Operational Transconductance Ampli er (OTA) which achieves a good linearity over a wide tuning range. Both the OTA and the VCO were fabricated in the AMS 0.35 µm CMOS process. Finally a 9X9 CMOS image sensor with spiking pixels was designed. Each pixel acts as an independent oscillator whose frequency is controlled by the incident light intensity. The sensor was fabricated in the AMS 0.35 µm CMOS Opto Process. Experimental validation and measured results are provided

New Realization of Quadrature Oscillator using OTRA

In this paper a new, operational transresistance amplifier (OTRA) based, third order quadrature oscillator (QO) is presented. The proposed structure forms a closed loop using a high pass filter and differentiator. All the resistors employed in the circuit can be implemented using matched transistors operating in linear region thereby making the proposed structure fully integrated and electronically tunable. The effect of non-idealities of OTRA has been analyzed which suggests that for high frequency applications self-compensation can be used. Workability of the proposed QO is verified through SPICE simulations using 0.18μm AGILENT CMOS process parameters. Total harmonic distortion (THD) for the proposed QO is found to be less than 2.5%.The sensitivity, phasenoise analysis is also discussed for the proposed structure

Integrated Building Cells for a Simple Modular Design of Electronic Circuits with Reduced External Complexity: Performance, Active Element Assembly, and an Application Example

This paper introduces new integrated analog cells fabricated in a C035 I3T25 0.35-m ON Semiconductor process suitable for a modular design of advanced active elements with multiple terminals and controllable features. We developed and realized five analog cells on a single integrated circuit (IC), namely a voltage differencing differential buffer, a voltage multiplier with current output in full complementary metal–oxide–semiconductor (CMOS) form, a voltage multiplier with current output with a bipolar core, a current-controlled current conveyor of the second generation with four current outputs, and a single-input and single-output adjustable current amplifier. These cells (sub-blocks of the manufactured IC device), designed to operate in a bandwidth of up to tens of MHz, can be used as a construction set for building a variety of advanced active elements, offering up to four independently adjustable internal parameters. The performances of all individual cells were verified by extensive laboratory measurements, and the obtained results were compared to simulations in the Cadence IC6 tool. The definition and assembly of a newly specified advanced active element, namely a current-controlled voltage differencing current conveyor transconductance amplifier (CC-VDCCTA), is shown as an example of modular interconnection of the selected cells. This device was implemented in a newly synthesized topology of an electronically linearly tunable quadrature oscillator. Features of this active element were verified by simulations and experimental measurements

Power-efficient Circuit Architectures for Receivers Leveraging Nanoscale CMOS

Cellular and mobile communication markets, together with CMOS technology scaling, have made complex systems-on-chip integrated circuits (ICs) ubiquitous. Moving towards the internet of things that aims to extend this further requires ultra-low power and efficient radio communication that continues to take advantage of nanoscale CMOS processes. At the heart of this lie orthogonal challenges in both system and circuit architectures of current day technology. By enabling transceivers at center frequencies ranging in several tens of GHz, modern CMOS processes support bandwidths of up to several GHz. However, conventional narrowband architectures cannot directly translate or trade-off these speeds to lower power consumption. Pulse-radio UWB (PR-UWB), a fundamentally different system of communication enables this trade-off by bit-level duty-cycling i.e., power-gating and has emerged as an alternative to conventional narrowband systems to achieve better energy efficiency. However, system-level challenges in the implementation of transceiver synchronization and duty-cycling have remained an open challenge to realize the ultra-low power numbers that PR-UWB promises. Orthogonally, as CMOS scaling continues, approaching 28nm and 14nm in production digital processes, the key transistor characteristics have rapidly changed. Changes in supply voltage, intrinsic gain and switching speeds have rendered conventional analog circuit design techniques obsolete, since they do not scale well with the digital backend engines that dictate scaling. Consequently, circuit architectures that employ time-domain processing and leverage the faster switching speeds have become attractive. However, they are fundamentally limited by their inability to support linear domain-to-domain conversion and hence, have remained un-suited to high-performance applications. Addressing these requirements in different dimensions, two pulse-radio UWB receiver and a continuous-time filter silicon prototypes are presented in this work. The receiver prototypes focus on system level innovation while the filter serves as a demonstration vehicle for novel circuit architectures developed in this work. The PR-UWB receiver prototypes are implemented in a 65nm LP CMOS technology and are fully integrated solutions. The first receiver prototype is a compact UWB receiver front end operating at 4.85GHz that is aggressively duty-cycled. It occupies an active area of only 0.4 mm², thanks to the use of few inductors and RF G_m-C filters and incorporates an automatic-threshold-recovery-based demodulator for digitization. The prototype achieves a sensitivity of -88dBm at a data rate of 1Mbps (for a BER of 10^-3), while achieving the lowest energy consumption gradient (dP/df_data=450pJ/bit) amongst other receivers operating in the lower UWB band, for the same sensitivity. However, this prototype is limited by idle-time power consumption (e.g., bias) and lacks synchronization capability. A fully self-duty-cycled and synchronized UWB pulse-radio receiver SoC targeted at low-data-rate communication is presented as the second prototype. The proposed architecture builds on the automatic-threshold-recovery-based demodulator to achieve synchronization using an all-digital clock and data recovery loop. The SoC synchronizes with the incoming pulse stream from the transmitter and duty-cycles itself. The SoC prototype achieves a -79.5dBm, 1Mbps-normalized sensitivity for a >5X improvement over the state of the art in power consumption (375pJ/bit), thanks to aggressive signal path and bias circuit duty-cycling. The SoC is fully integrated to achieve RF-in to bit-out operation and can interface with off-chip, low speed digital components. Finally, switched-mode signal processing, a signal processing paradigm that enables the design of highly linear, power-efficient feedback amplifiers is presented. A 0.6V continuous-time filter prototype that demonstrates the advantages of this technique is presented in a 65nm GP CMOS process. The filter draws 26.2mW from the supply while operating at a full-scale that is 73% of the V_dd, a bandwidth of 70MHz and a peak signal-to-noise-and-distortion ratio (SNDR) of 55.8dB. This represents a 2-fold improvement in full-scale and a 10-fold improvement in the bandwidth over state-of-the-art filter implementations, while demonstrating excellent linearity and signal-to-noise ratio. To sum up, innovations spanning both system and circuit architectures that leverage the speeds of nanoscale CMOS processes to enable power-efficient solutions to next-generation wireless receivers are presented in this work

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device