44 research outputs found

    Highly efficient linear CMOS power amplifiers for wireless communications

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    The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.PhDCommittee Chair: Kenney, J. Stevenson; Committee Member: Jongman Kim; Committee Member: Kohl, Paul A.; Committee Member: Kornegay, Kevin T.; Committee Member: Lee, Chang-H

    Reconfigurable RF Front End Components for Multi-Radio Platform Applications

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    The multi-service requirements of the 3G and 4G communication systems, and their backward compatibility requirements, create challenges for the antenna and RF front-end designs with multi-band and wide-band techniques. These challenges include: multiple filters, which are lossy, bulky, and expensive, are needed in the system; device board size limitation and the associated isolation problems caused by the limited space and crowd circuits; and the insertion loss issues created by the single-pole-multi-through antenna switch. As will be shown, reconfigurable antennas can perform portions of the filter functions, which can help solve the multiple filters problem. Additionally, reconfigurable RF circuits can decrease the circuit size and output ports, which can help solve board size limitation, and isolation and antenna switch insertion loss issues. To validate the idea that reconfigurable antennas and reconfigurable RF circuits are a viable option for multi-service communication system, a reconfigurable patch antenna, a reconfigurable monopole antenna, and a reconfigurable power amplifier (PA) have been developed. All designs adapt state-of-the-art techniques. For the reconfigurable antenna designs, an experiment demonstrating its advantages, such as jamming signal resistance, has been performed. Reconfigurable antennas provide a better out-ofoperating- band noise performance than the multi-band antennas design, decreasing the need for filters in the system. A full investigation of reconfigurable antennas, including the single service reconfigurable antenna, the mixed signal service reconfigurable antenna, and the multi-band reconfigurable antenna, has been completed. The design challenges, which include switches investigation, switches integration, and service grouping techniques, have been discussed. In the reconfigurable PA portion, a reconfigurable PA structure has first been demonstrated, and includes a reconfigurable output matching network (MN) and a reconfigurable die design. To validate the proposed reconfigurable PA structure, a reconfigurable PA for a 3G cell phone system has been designed with a multi-chip module technique. The reconfigurable PA structure can significantly decrease the real-estate, cost, and complexity of the PA design. Further, by decreasing the number of output ports, the number of poles for the antenna switch will be decreased as well, leading to an insertion loss decrease

    Design of a class-F power amplifier with reconfigurable output harmonic termination in 0.13 µm CMOS

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    Next generation wireless communication technology requires mobile devices and base stations to support multiband multimode frequencies with higher data rate because of the type of enriched and enhanced features and services that are provided to the end user. The challenge for next generation PA designers is to provide high efficiency, output power and good linearity across multiple frequency bands, modulation standards and bandwidth. Current industry solution involves parallel PAs dedicated to a single band of operation. As more and more features are added, more and more PAs will be required with increasing cost, area and complexity. As a solution to this problem, one tunable fully integrated class-F power amplifier with reconfigurable output harmonic termination is proposed, designed, fabricated and tested with a commercially available 0.13µm CMOS process technology. By using the coupling between the primary and the secondary winding of an on chip transformer with a variable secondary termination capacitance, the second and third harmonic short and open circuit frequencies are dynamically tuned from 700 MHz to 1200 MHz and achieve high efficiency and output power. To overcome CMOS process low break down voltage, a series voltage combining approach is used for the power device to boost output power, by allowing the power supply to exceed process limits. The fabricated die was packaged and mounted to a printed circuit board for evaluation. Compared to previously publish fully integrated PAs, our design exhibits superior peak power added efficiency, 48.4%, and decent saturated output power and power gain of 24.6 dBm and 16.5 dB respectively with reconfigurability from 700 MHz to 1200 MHz

    A Review of Watt-Level CMOS RF Power Amplifiers

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    펄스에 의한 동적 부하 변조 기술을 이용한 고효율 선형 송신기에 관한 연구

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    학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 8. 서광석.STRONG push for longer battery life time and growing thermal concerns for the modern 3G/4G mobile terminals lead to an ever-growing need for higher efficiencies from the handset power amplifiers (PAs). Furthermore, as the modulation signal bandwidth is increased and more complex modulation schemes are introduced for higher data rate, the peak-to-average power ratio (PAPR) of signals increases and the PA requires more power back-off to meet the stringent linearity requirement. Therefore, the PA design has to address the challenging task of enhancing the efficiencies in the back-off power levels. In this dissertation, dynamic load modulation (DLM) technique is investigated to boost the efficiency of a PA in the back-off output power level. This technique increases the efficiency by adjusting the PA load impedance according to the magnitude of the envelope signal. It can be categorized into two types, continuous and discrete types. Continuous-type DLM PA changes load impedance continuously by changing the capacitance of varactors used in the load matching circuit. Although the continuous modulation of the load impedance may result in significant efficiency enhancement, difficulties on integration of varactors and complexities on linearization of the PA make it difficult to be applied to the handset PA applications. Discrete-type DLM PA switches the load impedance from one value to another using RF switches. This type has the advantage in the aspect of ease of integration and simplicity in linearization compared to the continuous-type DLM PA, which make it more suited to the handset PA applications. However, the overall efficiency enhancement is quite limited since the PA does not always operate under the optimal load conditions. To overcome the limitation of the existing DLM techniques, a new method of DLM, called pulsed dynamic load modulation (PDLM), is proposed to operate the PA near the optimum impedance across a continuous back-off power range while still benefiting from the advantages offered by the discrete-type DLM PA. PDLM PA combines the concept of Class-S PA with 1-bit discrete load switching. Analytical calculation using simplified equivalent model is well matched with simulation results. To prove the proposed concept, it is implemented by designing and fabricating a prototype PDLM PA at 837 MHz using a 0.32-μm silicon-on-insulator (SOI) CMOS process. The experimental results show the overall PAE improvement for high-PAPR signals such as LTE signals. Several issues caused by the PDLM technique are also discussed such as imperfect pulse tone termination effect and output noise spectrum due to pulse tones. Improving methods are proposed through the further analysis and evaluation. The proposed PA is compared to the envelope tracking (ET) PA which is commonly used to boost efficiency at the back-off output power. Since the proposed concept is realized with low-power control circuits unlike envelope tracking, which requires high-power circuits such as dc-dc converters and linear amplifiers, the PDLM PA concept of this work can provide a potential solution for high-efficiency PAs for the future mobile terminals using wideband modulation signals.Chapter 1. Introduction 1 Chapter 2. Dynamic Load Modulation Technique 8 2.1 Introduction 8 2.2 Continuous-type dynamic load modulation PA 9 2.3 Discrete-type dynamic load modulation PA 14 2.4 Implementation example 15 2.4.1 DLM PA Structure 16 2.4.2 Linearization 23 2.4.3 Experimental Results 25 2.4.4 Conclusion 31 2.5 Limitations 32 2.6 References 33 Chapter 3. A Pulsed Dynamic Load Modulation Technique for High-Efficiency Linear Transmitters 36 3.1 Introduction 36 3.2 Operation Principle of the PDLM PA 38 3.2.1 Concept of the PDLM PA 38 3.2.2 Theoretical Analysis of the PDLM PA 41 3.3 Circuit Design 47 3.3.1 2 stage CMOS PA design 49 3.3.2 High power RF switch design 59 3.3.3 PWM signal generator and switch driver 61 3.4 Experimental Results 63 3.5 Conclusion 76 3.6 References 77 Chapter 4. Discussions 83 4.1 Operation bandwidth of the PDLM PA 83 4.2 Spectral noise reduction method 87 4.3 References 91 Chapter 5. Conclusions 94 5.1 Research Summary 94 5.2 Future Works 95 Abstract in Korean 97 Publications 99Docto

    Adaptive RF front-ends : providing resilience to changing environments

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    Radio frequency front-end circuits for W-CDMA direct conversion receiver

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    Master'sMASTER OF ENGINEERIN

    A 2.4 GHz CMOS class-F power amplifier with reconfigurable load-impedance matching

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    © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.A novel reconfigurable CMOS class-F power amplifier (PA) at 2.4 GHz is proposed in this paper. It is able to match the output load variations mainly due to the effect of hand and head on a mobile phone. The effect of load variation on power-added efficiency (PAE), output power, and distortion is compensated by reconfiguring the output network using an impedance tuner. The tuner controls the output matching at fundamental frequency without affecting the class-F harmonic tuning up to 3rd harmonic. To the best of our knowledge, this is the first design of a CMOS class-F PA addressed to compensate the effect of load variation. Measurement results for 50 ohm load impedance show a maximum PAE of 26% and maximum output power of 19.2 dBm. The measured total harmonic distortion is 4.9%. Measurement results for load values other than 50 ohm show that PAE increases from 6.5% (not-tuned PA) up to 19.9% (tuned PA) with the same output power (19.2 dBm). Tuning also reduces the adjacent-channel leakage ratio by 5 dB and the spectral regrowth of a Wi-Fi signal at the PA output. The size of the fabricated chip is 1.6 mm × 1.6 mm.Peer ReviewedPostprint (author's final draft
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