Study of Single-Event Transient Effects on Analog Circuits

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Redundant Skewed Clocking of Pulse-Clocked Latches for Low Power Soft-Error Mitigation

abstract: An integrated methodology combining redundant clock tree synthesis and pulse clocked latches mitigates both single event upsets (SEU) and single event transients (SET) with reduced power consumption. This methodology helps to change the hardness of the design on the fly. This approach, with minimal additional overhead circuitry, has the ability to work in three different modes of operation depending on the speed, hardness and power consumption required by design. This was designed on 90nm low-standby power (LSP) process and utilized commercial CAD tools for testing. Spatial separation of critical nodes in the physical design of this approach mitigates multi-node charge collection (MNCC) upsets. An advanced encryption system implemented with the proposed design, compared to a previous design with non-redundant clock trees and local delay generation. The proposed approach reduces energy per operation up to 18% over an improved version of the prior approach, with negligible area impact. It can save up to 2/3rd of the power consumption and reach maximum possible frequency, when used in non-redundant mode of operation.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Cross-layer Soft Error Analysis and Mitigation at Nanoscale Technologies

This thesis addresses the challenge of soft error modeling and mitigation in nansoscale technology nodes and pushes the state-of-the-art forward by proposing novel modeling, analyze and mitigation techniques. The proposed soft error sensitivity analysis platform accurately models both error generation and propagation starting from a technology dependent device level simulations all the way to workload dependent application level analysis

Measurement and analysis of soft error vulnerability of low-voltage logic and memory circuits

Scaling the supply voltage into the sub/near-threshold domain is one of the most effective methods for improving the energy efficiency of next-generation electronic microsystems. Unfortunately, the relationship between low-voltage operation and radiation-induced soft error rate is not widely known, as little research has been previously performed and reported for soft-error susceptibility of on-chip memory and logic at very low supply voltages. This information is critical for low-voltage circuit designers, as many applications that would benefit from the energy effi­ciency of sub/near-threshold also require high reliability. This work first details the design and implementation of a portable soft error reference platform, specif­ically targeting very low-voltage operation. The circuit-level details of a TSMC 65nm test-chip design are given, along with an analysis of data from experiments performed at Los Alamos Neutron Science Center (LANSCE) and the OSU Radi­ation Center. Once this soft-error rate is known, error resiliency techniques must be utilized for increased processor reliability. The design and implementation of an error-resilient, near-threshold SIMD processor in an IBM 45nm SOI process will also be covered. This prototype demonstrates both increased reliability and improved throughput over a conventional SIMD pipeline while operating in near-threshold

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

Fault and Defect Tolerant Computer Architectures: Reliable Computing With Unreliable Devices

This research addresses design of a reliable computer from unreliable device technologies. A system architecture is developed for a fault and defect tolerant (FDT) computer. Trade-offs between different techniques are studied and yield and hardware cost models are developed. Fault and defect tolerant designs are created for the processor and the cache memory. Simulation results for the content-addressable memory (CAM)-based cache show 90% yield with device failure probabilities of 3 x 10(-6), three orders of magnitude better than non fault tolerant caches of the same size. The entire processor achieves 70% yield with device failure probabilities exceeding 10(-6). The required hardware redundancy is approximately 15 times that of a non-fault tolerant design. While larger than current FT designs, this architecture allows the use of devices much more likely to fail than silicon CMOS. As part of model development, an improved model is derived for NAND Multiplexing. The model is the first accurate model for small and medium amounts of redundancy. Previous models are extended to account for dependence between the inputs and produce more accurate results

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields