177 research outputs found

    High Performance Power Management Integrated Circuits for Portable Devices

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    abstract: Portable devices often require multiple power management IC (PMIC) to power different sub-modules, Li-ion batteries are well suited for portable devices because of its small size, high energy density and long life cycle. Since Li-ion battery is the major power source for portable device, fast and high-efficiency battery charging solution has become a major requirement in portable device application. In the first part of dissertation, a high performance Li-ion switching battery charger is proposed. Cascaded two loop (CTL) control architecture is used for seamless CC-CV transition, time based technique is utilized to minimize controller area and power consumption. Time domain controller is implemented by using voltage controlled oscillator (VCO) and voltage controlled delay line (VCDL). Several efficiency improvement techniques such as segmented power-FET, quasi-zero voltage switching (QZVS) and switching frequency reduction are proposed. The proposed switching battery charger is able to provide maximum 2 A charging current and has an peak efficiency of 93.3%. By configure the charger as boost converter, the charger is able to provide maximum 1.5 A charging current while achieving 96.3% peak efficiency. The second part of dissertation presents a digital low dropout regulator (DLDO) for system on a chip (SoC) in portable devices application. The proposed DLDO achieve fast transient settling time, lower undershoot/overshoot and higher PSR performance compared to state of the art. By having a good PSR performance, the proposed DLDO is able to power mixed signal load. To achieve a fast load transient response, a load transient detector (LTD) enables boost mode operation of the digital PI controller. The boost mode operation achieves sub microsecond settling time, and reduces the settling time by 50% to 250 ns, undershoot/overshoot by 35% to 250 mV and 17% to 125 mV without compromising the system stability.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

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    Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

    ๋ฉ”๋ชจ๋ฆฌ ์–ดํ”Œ๋ฆฌ์ผ€์ด์…˜์„ ์œ„ํ•œ ๋น ๋ฅธ ๊ณผ๋„ ์‘๋‹ต ์„ฑ๋Šฅ์„ ๊ฐ€์ง€๋Š” ๋””์ง€ํ„ธ ๋‚ฎ์€ ๋“œ๋กญ์•„์›ƒ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2023. 2. ์ •๋•๊ท .In this dissertation, the design of a fast transient response digital low-dropout regulator (DLDO) applicable to next-generation memory systems is discussed. Recent technologies in memory systems mainly aim at high power density and fast data rate. Accordingly, the need for a power converter withstanding a large amount of load current change in a short period is increased. Accordingly, a solution for compensating for a voltage drop that causes significant damage to a memory data input/output is searched according to a periodic clock signal. With this situation, two structures that achieve fast transient response performance under the constraints of memory systems are proposed. To mitigate the transient response degradation under slow external clock conditions, an adaptive two-step search algorithm with event-driven approaches DLDO is proposed. The technique solves the limitations of loop operation time dependent on slow external clocks through a ring-amplifier-based continuous-time comparator. Also, shift register is designed as a circular structure with centralized control of each register to reduce the cost. Finally, the remaining regulation error is controlled by an adaptive successive approximation algorithm to minimize the settling time. Fast recovery and settling time are shown through the measurement of the prototype chip implemented by the 40-nm CMOS process. Next, a digital low dropout regulator for ultra-fast transient response is designed. A slope-detector-based coarse controller to detect, compensate, and correct load current changes occurring at every rising or falling edge of tens to hundreds of megahertz clocks is proposed. Compensation efficiency is increased by the method according to the degree of change in load voltage over time. Furthermore, the LUT-based shift register enables the fast loop response speed of the DLDO. Finally, a bidirectional latch-based driver with fast settling speed and high resolution are proposed. The prototype chip is implemented with a 40-nm CMOS process and achieves effective load voltage recovery through fast transient response performance even with low load capacitance.๋ณธ ๋…ผ๋ฌธ์€ ์ฐจ์„ธ๋Œ€ ๋ฉ”๋ชจ๋ฆฌ ์‹œ์Šคํ…œ์— ์ ์šฉ ๊ฐ€๋Šฅํ•œ ๋น ๋ฅธ ๊ณผ๋„ ์‘๋‹ต ์„ฑ๋Šฅ์„ ๊ฐ€์ง€๋Š” ๋””์ง€ํƒˆ ๋‚ฎ์€ ๋“œ๋กญ์•„์›ƒ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ์˜ ์„ค๊ณ„์— ๋Œ€ํ•ด ๊ธฐ์ˆ ํ•œ๋‹ค. ๋ฉ”๋ชจ๋ฆฌ ์‹œ์Šคํ…œ์˜ ์ตœ๊ทผ ๊ธฐ์ˆ ๋“ค์€ ๋†’์€ ์ „๋ ฅ ๋ฐ€๋„์™€ ๋น ๋ฅธ ๋ฐ์ดํ„ฐ ์†๋„๋ฅผ ์ฃผ๋œ ๋ชฉํ‘œ๋กœ ํ•˜๋ฉฐ ์ด์— ๋งž์ถ”์–ด ๋‹จ๊ธฐ๊ฐ„, ๋งŽ์€ ์–‘์˜ ๋ถ€ํ•˜ ์ „๋ฅ˜ ๋ณ€ํ™”๋ฅผ ๊ฒฌ๋””๋Š” ํŒŒ์›Œ ์ปจ๋ฒ„ํ„ฐ์˜ ํ•„์š”์„ฑ์ด ๋†’์•„์ง€๊ณ  ์žˆ๋‹ค. ์ด์— ์ฃผ๊ธฐ์ ์ธ ํด๋ฝ ์‹ ํ˜ธ์— ๋”ฐ๋ผ ๋ฉ”๋ชจ๋ฆฌ ๋ฐ์ดํ„ฐ ์ž…์ถœ๋ ฅ์— ์œ ์˜๋ฏธํ•œ ์†์ƒ์„ ๋ฐœ์ƒ์‹œํ‚ค๋Š” ์ „์•• ๊ฐ•ํ•˜๋ฅผ ๋ณด์ƒํ•˜๋Š” ํ•ด๊ฒฐ ๋ฐฉ์•ˆ์„ ํƒ์ƒ‰ํ•œ๋‹ค. ์ด๋ฅผ ํ†ตํ•ด ๋ฉ”๋ชจ๋ฆฌ ์‹œ์Šคํ…œ์ด ๊ฐ€์ง€๋Š” ์ œ์•ฝ์กฐ๊ฑด ํ•˜์—์„œ ๋น ๋ฅธ ๊ณผ๋„ ์‘๋‹ต ์„ฑ๋Šฅ์„ ๋‹ฌ์„ฑํ•˜๋Š” ๋‘ ๊ฐ€์ง€ ๊ตฌ์กฐ๋ฅผ ์ œ์•ˆํ•œ๋‹ค. ์ฒซ ๋ฒˆ์งธ ์‹œ์—ฐ์œผ๋กœ์„œ, ๋Š๋ฆฐ ์™ธ๋ถ€ ํด๋ฝ ์กฐ๊ฑด์—์„œ ์œ ๋ฐœ๋˜๋Š” ๋””์ง€ํƒˆ ๋‚ฎ์€ ๋“œ๋กญ์•„์›ƒ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ์˜ ๊ณผ๋„ ์‘๋‹ต ์„ฑ๋Šฅ ์ €ํ•˜๋ฅผ ์™„ํ™”์‹œํ‚ค๊ธฐ ์œ„ํ•œ ์ด๋ฒคํŠธ ์ฃผ๋„ ๋ฐฉ์‹์˜ ์ ์‘ํ˜• ๋‘ ๋‹จ๊ณ„ ์„œ์น˜ ๊ธฐ์ˆ ์„ ์ œ์•ˆํ•œ๋‹ค. ๋ณธ ๊ธฐ์ˆ ์€ ๋Š๋ฆฐ ์™ธ๋ถ€ํด๋ฝ์— ์˜์กดํ•œ ๋ฃจํ”„ ๋™์ž‘ ์‹œ๊ฐ„์˜ ํ•œ๊ณ„๋ฅผ ๊ณ ๋ฆฌ ์ฆํญ๊ธฐ ๊ธฐ๋ฐ˜ ์—ฐ์† ์‹œ๊ฐ„ ๋น„๊ต๊ธฐ๋ฅผ ํ†ตํ•ด ํ•ด๊ฒฐํ•œ๋‹ค. ๋˜ํ•œ ์ž๋ฆฌ ์ด๋™ ๋ ˆ์ง€์Šคํ„ฐ์˜ ๊ตฌํ˜„์— ์†Œ๋ชจ๋˜๋Š” ๋น„์šฉ์„ ์ค„์ด๊ณ ์ž ๊ฐ ๋ ˆ์ง€์Šคํ„ฐ์˜ ์ œ์–ด ์žฅ์น˜๋ฅผ ์ค‘์•™์œผ๋กœ ์ง‘์ ์‹œํ‚จ ์ˆœํ™˜ํ˜• ๊ตฌ์กฐ๋กœ ์„ค๊ณ„๋˜์—ˆ๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ ๋‚จ์•„์žˆ๋Š” ์กฐ์ • ์—๋Ÿฌ๋Š” ์ ์‘๋ฐฉ์‹์˜ ์ถ•์ฐจ ๋น„๊ตํ˜• ์•Œ๊ณ ๋ฆฌ์ฆ˜์œผ๋กœ ์ œ์–ดํ•˜์—ฌ ๊ต์ •์— ํ•„์š”ํ•œ ์‹œ๊ฐ„์„ ์ตœ์†Œํ™”ํ•˜์˜€๋‹ค. 40-nm CMOS ๊ณต์ •์œผ๋กœ ๊ตฌํ˜„๋œ ํ”„๋กœํ† ํƒ€์ž… ์นฉ์˜ ์ธก์ •์„ ํ†ตํ•ด ๋ถ€ํ•˜ ์ „์••์˜ ๋น ๋ฅธ ํšŒ๋ณต ์†๋„์™€ ์ •์ •์‹œ๊ฐ„์„ ๋ณด์ž„์„ ํ™•์ธํ•˜์˜€๋‹ค. ๋‘ ๋ฒˆ์งธ ์‹œ์—ฐ์œผ๋กœ์„œ, ์ดˆ๊ณ ์† ๊ณผ๋„ ์‘๋‹ต ํ™˜๊ฒฝ์— ์ ํ•ฉํ•œ ๋””์ง€ํ„ธ ๋‚ฎ์€ ๋“œ๋กญ์•„์›ƒ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ๊ฐ€ ์„ค๊ณ„๋˜์—ˆ๋‹ค. ์ˆ˜์‹ญ~์ˆ˜๋ฐฑ ๋ฉ”๊ฐ€ํ—ค๋ฅด์ฏ” ํด๋ฝ์˜ ์ƒ์Šน ๋˜๋Š” ํ•˜๊ฐ• ์—ฃ์ง€๋งˆ๋‹ค ๋ฐœ์ƒํ•˜๋Š” ๋ถ€ํ•˜ ์ „๋ฅ˜ ๋ณ€ํ™”๋ฅผ ํƒ์ง€ํ•˜๊ณ  ๋ณด์ƒํ•˜๊ณ  ์ •์ •ํ•˜๊ธฐ ์œ„ํ•ด ๊ธฐ์šธ๊ธฐ ํƒ์ง€๊ธฐ ๊ธฐ๋ฐ˜ coarse ์ œ์–ด๊ธฐ ๊ธฐ์ˆ ์„ ์ œ์•ˆํ•œ๋‹ค. ์‹œ๊ฐ„์— ๋”ฐ๋ฅธ ๋ถ€ํ•˜ ์ „์•• ๋ณ€ํ™”์˜ ์ •๋„์— ๋”ฐ๋ผ ์ฐจ๋“ฑ ๋ณด์ƒํ•˜๋Š” ์•Œ๊ณ ๋ฆฌ์ฆ˜์„ ์ ์šฉํ•จ์œผ๋กœ์จ ๋ณด์ƒ ํšจ์œจ์„ ๋†’์˜€๋‹ค. ๋‚˜์•„๊ฐ€ ์ˆœ๋žŒํ‘œ ๊ธฐ๋ฐ˜ ์ž๋ฆฌ์ด๋™ ๋ ˆ์ง€์Šคํ„ฐ๋Š” ๋ถ€ํ•˜ ์ „๋ฅ˜ ๊ณผ๋„ ์ƒํƒœ ์ดํ›„ ๋””์ง€ํƒˆ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ์˜ ๋น ๋ฅธ ๋ฃจํ”„ ์‘๋‹ต ์†๋„๋ฅผ ๊ฐ€๋Šฅ์ผ€ ํ•˜์˜€๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ ๋‚จ์€ ์กฐ์ • ์—๋Ÿฌ๋ฅผ ์ œ์–ดํ•˜๋Š”๋ฐ ์žˆ์–ด์„œ ๊ธฐ์กด ์ž๋ฆฌ์ด๋™ ๋ ˆ์ง€์Šคํ„ฐ ๋ฐฉ์‹์—์„œ ๋ฒ—์–ด๋‚˜ ๋น ๋ฅธ ์ˆ˜๋ ด ์†๋„์™€ ๋†’์€ ํ•ด์ƒ๋„๋ฅผ ๊ฐ€์ง€๋Š” ์–‘๋ฐฉํ–ฅ ๋ž˜์น˜ ๊ธฐ๋ฐ˜ ๋“œ๋ผ์ด๋ฒ„๊ฐ€ ์ œ์•ˆ๋˜์—ˆ๋‹ค. ํ•ด๋‹น ํ”„๋กœํ† ํƒ€์ž… ์นฉ์€ 40-nm CMOS ๊ณต์ •์œผ๋กœ ๊ตฌํ˜„๋˜์—ˆ์œผ๋ฉฐ, ๋‚ฎ์€ ๋ถ€ํ•˜ ์ถ•์ „์šฉ๋Ÿ‰์—๋„ ๋น ๋ฅธ ๊ณผ๋„ ์‘๋‹ต ์„ฑ๋Šฅ์„ ํ†ตํ•ด ํšจ๊ณผ์ ์ธ ๋ถ€ํ•˜ ์ „์•• ํšŒ๋ณต์„ ์ด๋ฃจ์–ด ๋‚ด์—ˆ๋‹ค.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 VARIOUS TYPES OF LDO 4 1.2.1 ANALOG LDO VS. DIGITAL LDO 4 1.2.2 CAP LDO VS. CAP-LESS LDO 6 1.3 THESIS ORGANIZATION 8 CHAPTER 2 BACKGROUNDS ON DIGITAL LOW-DROPOUT REGULATOR 9 2.1 BASIC DIGITAL LOW-DROPOUT REGULATOR 9 2.2 FAST TRANSIENT RESPONSE LOW-DROPOUT REGULATOR 12 2.2.1 RESPONSE TIME 13 2.2.1 SETTLING TIME 20 2.3 VARIOUS METHODS FOR IMPLEMENT FAST TRANSIENT DIGITAL LDO 21 2.3.1 EVENT-DRIVEN DIGITAL LDO 21 2.3.2 FEEDFORWARD CONTROL 23 2.3.3 COMPUTATIONAL DIGITAL LDO 25 2.4 DESIGN POINTS OF FAST TRANSIENT RESPONSE DIGITAL LDO 27 CHAPTER 3 A FAST DROOP-RECOVERY EVENT-DRIVEN DIGITAL LDO WITH ADAPTIVE LINEAR/BINARY TWO-STEP SEARCH FOR VOLTAGE REGULATION IN ADVANCED MEMORY 29 3.1 OVERVIEW 29 3.2 PROPOSED DIGITAL LDO 32 3.2.1 MOTIVATION 32 3.2.2 ALSC WITH TWO-DIMENSIONAL CIRCULAR SHIFTING REGISTER 36 3.2.3 SBSC WITH SUBRANGE SUCCESSIVE-APPROXIMATION REGISTER 39 3.2.4 STABILITY ANALYSIS 41 3.3 CIRCUIT IMPLEMENTATION 44 3.3.1 TIME-INTERLEAVED RING-AMPLIFIER-BASED COMPARATOR 44 3.3.2 ASYNCHRONOUS 2D CIRCULAR SHIFTING REGISTER 49 3.3.3 SUBRANGE SUCCESSIVE APPROXIMATION REGISTER 51 3.4 MESUREMENT RESULTS 54 CHAPTER 4 A FAST TRANSIENT RESPONSE DIGITAL LOW-DROPOUT REGULATOR WITH SLOPE-DETECTOR-BASED MULTI-STEP CONTROL FOR DIGITAL LOAD APPLICATION 62 4.1 OVERVIEW 62 4.2 PROPOSED DIGITAL LDO 64 4.2.1 MOTIVATION 64 4.2.2 ARCHITECTURE OF DIGITAL LDO 66 4.2.3 SLEW-RATE DEPENDENT COARSE-CONTROL LOOP 69 4.2.4 FINE-CONTROL LOOP 72 4.2.5 CONTROL FOR LOAD-TRANSIENT RESPONSE 74 4.3 CIRCUIT IMPLEMENTATION 77 4.3.1 COMPARATOR-TRIGGERED OSCILLATOR DESIGN 77 4.3.2 SLOPE DETECTOR DESIGN 81 4.3.3 LUT-BASED SHIFT REGISTER DESIGN 84 4.3.4 BI-DIRECTIONAL LATCH-BASED DRIVER DESIGN 86 4.4 MEASUREMENT(SIMULATION) RESULTS 90 CHAPTER 5 CONCLUSION 95 BIBLIOGRAPHY 97 ์ดˆ ๋ก 109๋ฐ•

    Proposal and design methodology of switching mode low dropout regulator for Bio-medical applications

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    The switching operation based low dropout (LDO) regulator utilizing on-off control is pre-sented. It consists of simple circuit elements which are comparator, some logic gates, switched capacitor and feedback circuit. In this study, we target the application to the power supply circuit for the analog front end (AFE) of bio-medical system (such as daily-used bio-monitoring devices) whose required maximum load current is 50 A. In this paper, the design procedure of the proposed LDO has been clarified and actual circuit design using the procedure has been done. The proposed LDO has been evaluated by SPICE simulation using 1P 2M 0.6 m CMOS process device parameters. From simulation results, we could confirm that the low quiescent current of 1 A with the output ripple of 5 mVpp. The circuit area is 0.0173 mm2 in spite of using 0.6 m design rules. The proposed circuit is suitable for adopting to the light load and low frequency applications

    Improved Accuracy Area Efficient Hybrid CMOS/GaN DC-DC Buck Converterfor High Step-Down Ratio Applications

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    abstract: Point of Load (POL) DC-DC converters are increasingly used in space applications, data centres, electric vehicles, portable computers and devices and medical electronics. Heavy computing and processing capabilities of the modern devices have ushered the use of higher battery supply voltage to increase power storage. The need to address this consumer experience driven requirement has propelled the evolution of the next generation of small form-factor power converters which can operate with higher step down ratios while supplying heavy continuous load currents without sacrificing efficiency. Constant On-Time (COT) converter topology is capable of achieving stable operation at high conversion ratio with minimum off-chip components and small silicon area. This work proposes a Constant On-Time buck dc-dc converter for a wide dynamic input range and load currents from 100mA to 10A. Accuracy of this ripple based converter is improved by a unique voltage positioning technique which modulates the reference voltage to lower the average ripple profile close to the nominal output. Adaptive On-time block features a transient enhancement scheme to assist in faster voltage droop recovery when the output voltage dips below a defined threshold. UtilizingGallium Nitride (GaN) power switches enable the proposed converter to achieve very high efficiency while using smaller size inductor-capacitor (LC) power-stage. Use of novel Superjunction devices with higher drain-source blocking voltage simplifies the complex driver design and enables faster frequency of operation. It allows 1.8VComplementary Metal-Oxide Semiconductor (CMOS) devices to effectively drive GaNpower FETs which require 5V gate signal swing. The presented controller circuit uses internal ripple generation which reduces reliance on output cap equivalent series resistance (ESR) for loop stability and facilitates ripples reduction at the output. The ripple generation network is designed to provide ai optimally stable performance while maintaining load regulation and line regulation accuracy withing specified margin. The chip with ts external Power FET package is proposed to be integrated on a printed circuit board for testing. The designed power converter is expected to operate under 200 MRad of a total ionising dose of radiation enabling it to function within large hadron collider at CERN and space satellite and probe missions.Dissertation/ThesisMasters Thesis Electrical Engineering 201

    A Silicon Carbide Linear Voltage Regulator for High Temperature Applications

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    Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon\u27s, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field. This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today\u27s systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results

    A self-powered single-chip wireless sensor platform

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    Internet of thingsโ€ require a large array of low-cost sensor nodes, wireless connectivity, low power operation and system intelligence. On the other hand, wireless biomedical implants demand additional specifications including small form factor, a choice of wireless operating frequencies within the window for minimum tissue loss and bio-compatibility This thesis describes a low power and low-cost internet of things system suitable for implant applications that is implemented in its entirety on a single standard CMOS chip with an area smaller than 0.5 mm2. The chip includes integrated sensors, ultra-low-power transceivers, and additional interface and digital control electronics while it does not require a battery or complex packaging schemes. It is powered through electromagnetic (EM) radiation using its on-chip miniature antenna that also assists with transmit and receive functions. The chip can operate at a short distance (a few centimeters) from an EM source that also serves as its wireless link. Design methodology, system simulation and optimization and early measurement results are presented
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