Evaluation of Tracking Regimes for, and Security of, PLI Systems

In the area of computer and network security, due to the insufficiency, high costs, and user-unfriendliness of existing defending methods against a number of cyber attacks, focus for developing new security improvement methods has shifted from the digital to analog domain. In the analog domain, devices are distinguished based on the present variations and characteristics in their physical signals. In fact, each device has unique features in its signal that can be used for identification and monitoring purposes. In this regard, the term physical layer identification (PLI) or device fingerprinting refers to the process of classifying different electronic devices based on their analog identities that are created by employment of signal processing and data analysis methods. Due to the fact that a device behavior undergoes changes due to variations in external and internal conditions, the available PLI techniques might not be able to identify the device reliably. Therefore, a tracking system that is capable of extracting and explaining the present variations in the electrical signals is required to be developed. In order to achieve the best possible tracking system, a number of prediction models are designed using certain statistical techniques. In order to evaluate the performance of these models, models are run on the acquired data from five different fabrications of the same device in four distinct experiments. The results of performance evaluation show that the surrounding temperature of a device is the best option for predicting its signal. The last part of this research project belongs to the security evaluation of a PLI system. The leveraged security examination technique exposes the PLI system to different types of attacks and evaluates its defending strength accordingly. Based on the mechanism of the employed attack in this work, the forged version of a device’s signal is generated using an arbitrary waveform generator (AWG) and is sent to the PLI system. The outcomes of this experiment indicate that the leveraged PLI technique is strong enough in defeating this attack

Stagioni: Temperature management to enable near-sensor processing for performance, fidelity, and energy-efficiency of vision and imaging workloads

abstract: Vision processing on traditional architectures is inefficient due to energy-expensive off-chip data movements. Many researchers advocate pushing processing close to the sensor to substantially reduce data movements. However, continuous near-sensor processing raises the sensor temperature, impairing the fidelity of imaging/vision tasks. The work characterizes the thermal implications of using 3D stacked image sensors with near-sensor vision processing units. The characterization reveals that near-sensor processing reduces system power but degrades image quality. For reasonable image fidelity, the sensor temperature needs to stay below a threshold, situationally determined by application needs. Fortunately, the characterization also identifies opportunities -- unique to the needs of near-sensor processing -- to regulate temperature based on dynamic visual task requirements and rapidly increase capture quality on demand. Based on the characterization, the work proposes and investigate two thermal management strategies -- stop-capture-go and seasonal migration -- for imaging-aware thermal management. The work present parameters that govern the policy decisions and explore the trade-offs between system power and policy overhead. The work's evaluation shows that the novel dynamic thermal management strategies can unlock the energy-efficiency potential of near-sensor processing with minimal performance impact, without compromising image fidelity.Dissertation/ThesisMasters Thesis Computer Engineering 201

Degradation Models and Optimizations for CMOS Circuits

Die Gewährleistung der Zuverlässigkeit von CMOS-Schaltungen ist derzeit eines der größten Herausforderungen beim Chip- und Schaltungsentwurf. Mit dem Ende der Dennard-Skalierung erhöht jede neue Generation der Halbleitertechnologie die elektrischen Felder innerhalb der Transistoren. Dieses stärkere elektrische Feld stimuliert die Degradationsphänomene (Alterung der Transistoren, Selbsterhitzung, Rauschen, usw.), was zu einer immer stärkeren Degradation (Verschlechterung) der Transistoren führt. Daher erleiden die Transistoren in jeder neuen Technologiegeneration immer stärkere Verschlechterungen ihrer elektrischen Parameter. Um die Funktionalität und Zuverlässigkeit der Schaltung zu wahren, wird es daher unerlässlich, die Auswirkungen der geschwächten Transistoren auf die Schaltung präzise zu bestimmen. Die beiden wichtigsten Auswirkungen der Verschlechterungen sind ein verlangsamtes Schalten, sowie eine erhöhte Leistungsaufnahme der Schaltung. Bleiben diese Auswirkungen unberücksichtigt, kann die verlangsamte Schaltgeschwindigkeit zu Timing-Verletzungen führen (d.h. die Schaltung kann die Berechnung nicht rechtzeitig vor Beginn der nächsten Operation abschließen) und die Funktionalität der Schaltung beeinträchtigen (fehlerhafte Ausgabe, verfälschte Daten, usw.). Um diesen Verschlechterungen der Transistorparameter im Laufe der Zeit Rechnung zu tragen, werden Sicherheitstoleranzen eingeführt. So wird beispielsweise die Taktperiode der Schaltung künstlich verlängert, um ein langsameres Schaltverhalten zu tolerieren und somit Fehler zu vermeiden. Dies geht jedoch auf Kosten der Performanz, da eine längere Taktperiode eine niedrigere Taktfrequenz bedeutet. Die Ermittlung der richtigen Sicherheitstoleranz ist entscheidend. Wird die Sicherheitstoleranz zu klein bestimmt, führt dies in der Schaltung zu Fehlern, eine zu große Toleranz führt zu unnötigen Performanzseinbußen. Derzeit verlässt sich die Industrie bei der Zuverlässigkeitsbestimmung auf den schlimmstmöglichen Fall (maximal gealterter Schaltkreis, maximale Betriebstemperatur bei minimaler Spannung, ungünstigste Fertigung, etc.). Diese Annahme des schlimmsten Falls garantiert, dass der Chip (oder integrierte Schaltung) unter allen auftretenden Betriebsbedingungen funktionsfähig bleibt. Darüber hinaus ermöglicht die Betrachtung des schlimmsten Falles viele Vereinfachungen. Zum Beispiel muss die eigentliche Betriebstemperatur nicht bestimmt werden, sondern es kann einfach die schlimmstmögliche (sehr hohe) Betriebstemperatur angenommen werden. Leider lässt sich diese etablierte Praxis der Berücksichtigung des schlimmsten Falls (experimentell oder simulationsbasiert) nicht mehr aufrechterhalten. Diese Berücksichtigung bedingt solch harsche Betriebsbedingungen (maximale Temperatur, etc.) und Anforderungen (z.B. 25 Jahre Betrieb), dass die Transistoren unter den immer stärkeren elektrischen Felder enorme Verschlechterungen erleiden. Denn durch die Kombination an hoher Temperatur, Spannung und den steigenden elektrischen Feldern bei jeder Generation, nehmen die Degradationphänomene stetig zu. Das bedeutet, dass die unter dem schlimmsten Fall bestimmte Sicherheitstoleranz enorm pessimistisch ist und somit deutlich zu hoch ausfällt. Dieses Maß an Pessimismus führt zu erheblichen Performanzseinbußen, die unnötig und demnach vermeidbar sind. Während beispielsweise militärische Schaltungen 25 Jahre lang unter harschen Bedingungen arbeiten müssen, wird Unterhaltungselektronik bei niedrigeren Temperaturen betrieben und muss ihre Funktionalität nur für die Dauer der zweijährigen Garantie aufrechterhalten. Für letzteres können die Sicherheitstoleranzen also deutlich kleiner ausfallen, um die Performanz deutlich zu erhöhen, die zuvor im Namen der Zuverlässigkeit aufgegeben wurde. Diese Arbeit zielt darauf ab, maßgeschneiderte Sicherheitstoleranzen für die einzelnen Anwendungsszenarien einer Schaltung bereitzustellen. Für fordernde Umgebungen wie Weltraumanwendungen (wo eine Reparatur unmöglich ist) ist weiterhin der schlimmstmögliche Fall relevant. In den meisten Anwendungen, herrschen weniger harsche Betriebssbedingungen (z.B. sorgen Kühlsysteme für niedrigere Temperaturen). Hier können Sicherheitstoleranzen maßgeschneidert und anwendungsspezifisch bestimmt werden, sodass Verschlechterungen exakt toleriert werden können und somit die Zuverlässigkeit zu minimalen Kosten (Performanz, etc.) gewahrt wird. Leider sind die derzeitigen Standardentwurfswerkzeuge für diese anwendungsspezifische Bestimmung der Sicherheitstoleranz nicht gut gerüstet. Diese Arbeit zielt darauf ab, Standardentwurfswerkzeuge in die Lage zu versetzen, diesen Bedarf an Zuverlässigkeitsbestimmungen für beliebige Schaltungen unter beliebigen Betriebsbedingungen zu erfüllen. Zu diesem Zweck stellen wir unsere Forschungsbeiträge als vier Schritte auf dem Weg zu anwendungsspezifischen Sicherheitstoleranzen vor: Schritt 1 verbessert die Modellierung der Degradationsphänomene (Transistor-Alterung, -Selbsterhitzung, -Rauschen, etc.). Das Ziel von Schritt 1 ist es, ein umfassendes, einheitliches Modell für die Degradationsphänomene zu erstellen. Durch die Verwendung von materialwissenschaftlichen Defektmodellierungen werden die zugrundeliegenden physikalischen Prozesse der Degradationsphänomena modelliert, um ihre Wechselwirkungen zu berücksichtigen (z.B. Phänomen A kann Phänomen B beschleunigen) und ein einheitliches Modell für die simultane Modellierung verschiedener Phänomene zu erzeugen. Weiterhin werden die jüngst entdeckten Phänomene ebenfalls modelliert und berücksichtigt. In Summe, erlaubt dies eine genaue Degradationsmodellierung von Transistoren unter gleichzeitiger Berücksichtigung aller essenziellen Phänomene. Schritt 2 beschleunigt diese Degradationsmodelle von mehreren Minuten pro Transistor (Modelle der Physiker zielen auf Genauigkeit statt Performanz) auf wenige Millisekunden pro Transistor. Die Forschungsbeiträge dieser Dissertation beschleunigen die Modelle um ein Vielfaches, indem sie zuerst die Berechnungen so weit wie möglich vereinfachen (z.B. sind nur die Spitzenwerte der Degradation erforderlich und nicht alle Werte über einem zeitlichen Verlauf) und anschließend die Parallelität heutiger Computerhardware nutzen. Beide Ansätze erhöhen die Auswertungsgeschwindigkeit, ohne die Genauigkeit der Berechnung zu beeinflussen. In Schritt 3 werden diese beschleunigte Degradationsmodelle in die Standardwerkzeuge integriert. Die Standardwerkzeuge berücksichtigen derzeit nur die bestmöglichen, typischen und schlechtestmöglichen Standardzellen (digital) oder Transistoren (analog). Diese drei Typen von Zellen/Transistoren werden von der Foundry (Halbleiterhersteller) aufwendig experimentell bestimmt. Da nur diese drei Typen bestimmt werden, nehmen die Werkzeuge keine Zuverlässigkeitsbestimmung für eine spezifische Anwendung (Temperatur, Spannung, Aktivität) vor. Simulationen mit Degradationsmodellen ermöglichen eine Bestimmung für spezifische Anwendungen, jedoch muss diese Fähigkeit erst integriert werden. Diese Integration ist eines der Beiträge dieser Dissertation. Schritt 4 beschleunigt die Standardwerkzeuge. Digitale Schaltungsentwürfe, die nicht auf Standardzellen basieren, sowie komplexe analoge Schaltungen können derzeit nicht mit analogen Schaltungssimulatoren ausgewertet werden. Ihre Performanz reicht für solch umfangreiche Simulationen nicht aus. Diese Dissertation stellt Techniken vor, um diese Werkzeuge zu beschleunigen und somit diese umfangreichen Schaltungen simulieren zu können. Diese Forschungsbeiträge, die sich jeweils über mehrere Veröffentlichungen erstrecken, ermöglichen es Standardwerkzeugen, die Sicherheitstoleranz für kundenspezifische Anwendungsszenarien zu bestimmen. Für eine gegebene Schaltungslebensdauer, Temperatur, Spannung und Aktivität (Schaltverhalten durch Software-Applikationen) können die Auswirkungen der Transistordegradation ausgewertet werden und somit die erforderliche (weder unter- noch überschätzte) Sicherheitstoleranz bestimmt werden. Diese anwendungsspezifische Sicherheitstoleranz, garantiert die Zuverlässigkeit und Funktionalität der Schaltung für genau diese Anwendung bei minimalen Performanzeinbußen

Fault-based Analysis of Industrial Cyber-Physical Systems

The fourth industrial revolution called Industry 4.0 tries to bridge the gap between traditional Electronic Design Automation (EDA) technologies and the necessity of innovating in many indus- trial fields, e.g., automotive, avionic, and manufacturing. This complex digitalization process in- volves every industrial facility and comprises the transformation of methodologies, techniques, and tools to improve the efficiency of every industrial process. The enhancement of functional safety in Industry 4.0 applications needs to exploit the studies related to model-based and data-driven anal- yses of the deployed Industrial Cyber-Physical System (ICPS). Modeling an ICPS is possible at different abstraction levels, relying on the physical details included in the model and necessary to describe specific system behaviors. However, it is extremely complicated because an ICPS is com- posed of heterogeneous components related to different physical domains, e.g., digital, electrical, and mechanical. In addition, it is also necessary to consider not only nominal behaviors but even faulty behaviors to perform more specific analyses, e.g., predictive maintenance of specific assets. Nevertheless, these faulty data are usually not present or not available directly from the industrial machinery. To overcome these limitations, constructing a virtual model of an ICPS extended with different classes of faults enables the characterization of faulty behaviors of the system influenced by different faults. In literature, these topics are addressed with non-uniformly approaches and with the absence of standardized and automatic methodologies for describing and simulating faults in the different domains composing an ICPS. This thesis attempts to overcome these state-of-the-art gaps by proposing novel methodologies, techniques, and tools to: model and simulate analog and multi-domain systems; abstract low-level models to higher-level behavioral models; and monitor industrial systems based on the Industrial Internet of Things (IIOT) paradigm. Specifically, the proposed contributions involve the exten- sion of state-of-the-art fault injection practices to improve the ICPSs safety, the development of frameworks for safety operations automatization, and the definition of a monitoring framework for ICPSs. Overall, fault injection in analog and digital models is the state of the practice to en- sure functional safety, as mentioned in the ISO 26262 standard specific for the automotive field. Starting from state-of-the-art defects defined for analog descriptions, new defects are proposed to enhance the IEEE P2427 draft standard for analog defect modeling and coverage. Moreover, dif- ferent techniques to abstract a transistor-level model to a behavioral model are proposed to speed up the simulation of faulty circuits. Therefore, unlike the electrical domain, there is no extensive use of fault injection techniques in the mechanical one. Thus, extending the fault injection to the mechanical and thermal fields allows for supporting the definition and evaluation of more reliable safety mechanisms. Hence, a taxonomy of mechanical faults is derived from the electrical domain by exploiting the physical analogies. Furthermore, specific tools are built for automatically instru- menting different descriptions with multi-domain faults. The entire work is proposed as a basis for supporting the creation of increasingly resilient and secure ICPS that need to preserve functional safety in any operating context

Designing Framework For The Computer Aided Design Of Silicon Carbide JFET Circuits In BLEO Environments

Abstract: circuit design and testing are two essential processes to synthesis of an efficient and reliable circuit. Real-time testing of a circuit through circuit fabrication and development is an expensive and a risky procedure whereas testing the circuit by modelling and simulating is more efficient and inexpensive. Silicon-based semiconductors are the basic components of any modern day electronic devices, and their usage has dominated the marketplace. But these conventional cmos devices cannot exist in an environment consisting of harsh radiation, high temperature and many other environmental conditions, such as venus or mars. However, 6h-sic jfets, which are basic logic gate integrated circuits, have significantly potential for persistent operation in these environmental conditions. On the basis of the temperature effects of 6h-sic jfet\u27s compared to conventional cmos jfet\u27s, we choose to develop the framework for a computer aided design of silicon carbide jfet circuits in beyond low earth orbit (bleo) environments. Our framework will help test the modern and emerging nanotechnologies for the temperature dependence of sic electronics and sensors in harsh environments. Framework along with the integrated circuit design and the simulations for the sic electronic circuit are the desired results for this project

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Nano-scale TG-FinFET: Simulation and Analysis

Transistor has been designed and fabricated in the same way since its invention more than four decades ago enabling exponential shrinking in the channel length. However, hitting fundamental limits imposed the need for introducing disruptive technology to take over. FinFET - 3-D transistor - has been emerged as the first successor to MOSFET to continue the technology scaling roadmap. In this thesis, scaling of nano-meter FinFET has been investigated on both the device and circuit levels. The studies, primarily, consider FinFET in its tri-gate (TG) structure. On the device level, first, the main TCAD models used in simulating electron transport are benchmarked against the most accurate results on the semi-classical level using Monte Carlo techniques. Different models and modifications are investigated in a trial to extend one of the conventional models to the nano-scale simulations. Second, a numerical study for scaling TG-FinFET according to the most recent International Technology Roadmap of Semiconductors is carried out by means of quantum corrected 3-D Monte Carlo simulations in the ballistic and quasi-ballistic regimes, to assess its ultimate performance and scaling behavior for the next generations. Ballisticity ratio (BR) is extracted and discussed over different channel lengths. The electron velocity along the channel is analyzed showing the physical significance of the off-equilibrium transport with scaling the channel length. On the circuit level, first, the impact of FinFET scaling on basic circuit blocks is investigated based on the PTM models. 256-bit (6T) SRAM is evaluated for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of VT variations on the delay, power, and stability is reported considering die-to-die variations. Second, we move to another peer-technology which is 28nm FD-SOI as a comparative study, keeping the SRAM cell as the test block, more advanced study is carried out considering the cell‘s stability and the evolution from dynamic to static metrics

Charge Injection and Clock Feedthrough

Turning off a transistor introduces an error voltage in switched-capacitor circuits. Circuits such as analog-to-digital converters (ADC), digital-to-analog converters (DAC), and CMOS image sensor pixels are limited in performance due to the effects known as charge injection and clock feedthrough. Charge injection occurs in a switched-capacitor circuit when the transistor turns off and disperses channel charge into the source and drain. The source, which is the sampling capacitor, experiences an error in the sampled voltage due to the incoming channel charge. Simultaneously, the coupling due to gate-source overlap capacitance also contributes to the total error voltage, which is known as clock feedthrough. In order to fully understand this behavior, charge injection and clock feedthrough are modeled, simulated, and measured. A basic charge injection/clock feedthrough model is first introduced to identify key components and explain fundamental behavior. This model is expanded upon by using Technology Computer Aided Design (TCAD) simulations, which can more accurately model the distribution of channel charge. TCAD simulations can also easily predict how charge injection and clock feedthrough are affected by various parameters, such as transistor operation, size, and geometry. Test structures are fabricated in a 0.18 µm CMOS process to measure and verify charge injection and clock feedthrough. It is shown that the model and simulations agree within 10%. The measurements are 40% higher than the model, but exhibit good trend agreement with the model and simulations

Analysis and design of power delivery networks exploiting simulation tools and numerical optimization techniques

A higher performance of computing systems is being demanded year after year, driving the digital industry to fiercely compete for offering the fastest computer system at the lowest cost. In addition, as computing system performance is growing, power delivery networks (PDN) and power integrity (PI) designs are getting increasingly more relevance due to the faster speeds and more parallelism required to obtain the required performance growth. The largest data throughput at the lowest power consumption is a common goal for most of the commercial computing systems. As a consequence of this performance growth and power delivery tradeoffs, the complexity involved in analyzing and designing PDN in digital systems is being increased. This complexity drives longer design cycle times when using traditional design tools. For this reason, the need of using more efficient design methods is getting more relevance in order to keep designing and launching products in a faster manner to the market. This trend pushes PDN designers to look for methodologies to simplify analysis and reduce design cycle times. The main objective for this Master’s thesis is to propose alternative methods by exploiting reliable simulation approaches and efficient numerical optimization techniques to analyze and design PDN to ensure power integrity. This thesis explores the use of circuital models and electromagnetic (EM) field solvers in combination with numerical optimization methods, including parameter extraction (PE) formulations. It also establishes a sound basis for using space mapping (SM) methodologies in future developments, in a way that we exploit the advantages of the most accurate and powerful models, such as 3D full-wave EM simulators, but conserving the simplicity and low computational resourcing of the analytical, circuital, and empirical models