LEAP Scratchpads: Automatic Memory and Cache Management for Reconfigurable Logic [Extended Version]

CORRECTION: The authors for entry [4] in the references should have been "E. S. Chung, J. C. Hoe, and K. Mai".Developers accelerating applications on FPGAs or other reconfigurable logic have nothing but raw memory devices in their standard toolkits. Each project typically includes tedious development of single-use memory management. Software developers expect a programming environment to include automatic memory management. Virtual memory provides the illusion of very large arrays and processor caches reduce access latency without explicit programmer instructions. LEAP scratchpads for reconfigurable logic dynamically allocate and manage multiple, independent, memory arrays in a large backing store. Scratchpad accesses are cached automatically in multiple levels, ranging from shared on-board, RAM-based, set-associative caches to private caches stored in FPGA RAM blocks. In the LEAP framework, scratchpads share the same interface as on-die RAM blocks and are plug-in replacements. Additional libraries support heap management within a storage set. Like software developers, accelerator authors using scratchpads may focus more on core algorithms and less on memory management. Two uses of FPGA scratchpads are analyzed: buffer management in an H.264 decoder and memory management within a processor microarchitecture timing model

An Energy-Efficient Reconfigurable DTLS Cryptographic Engine for Securing Internet-of-Things Applications

This paper presents the first hardware implementation of the Datagram Transport Layer Security (DTLS) protocol to enable end-to-end security for the Internet of Things (IoT). A key component of this design is a reconfigurable prime field elliptic curve cryptography (ECC) accelerator, which is 238x and 9x more energy-efficient compared to software and state-of-the-art hardware respectively. Our full hardware implementation of the DTLS 1.3 protocol provides 438x improvement in energy-efficiency over software, along with code size and data memory usage as low as 8 KB and 3 KB respectively. The cryptographic accelerators are coupled with an on-chip low-power RISC-V processor to benchmark applications beyond DTLS with up to two orders of magnitude energy savings. The test chip, fabricated in 65 nm CMOS, demonstrates hardware-accelerated DTLS sessions while consuming 44.08 uJ per handshake, and 0.89 nJ per byte of encrypted data at 16 MHz and 0.8 V.Comment: Published in IEEE Journal of Solid-State Circuits (JSSC

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory

The gradually widening speed disparity of between CPU and memory has become an overwhelming bottleneck for the development of Chip Multiprocessor (CMP) systems. In addition, increasing penalties caused by frequent on-chip memory accesses have raised critical challenges in delivering high memory access performance with tight power and latency budgets. To overcome the daunting memory wall and energy wall issues, this thesis focuses on proposing a new heterogeneous scratchpad memory architecture which is configured from SRAM, MRAM, and Z-RAM. Based on this architecture, we propose two algorithms, a dynamic programming and a genetic algorithm, to perform data allocation to different memory units, therefore reducing memory access cost in terms of power consumption and latency. Extensive and intensive experiments are performed to show the merits of the heterogeneous scratchpad architecture over the traditional pure memory system and the effectiveness of the proposed algorithms

FPGA-based Query Acceleration for Non-relational Databases

Database management systems are an integral part of today’s everyday life. Trends like smart applications, the internet of things, and business and social networks require applications to deal efficiently with data in various data models close to the underlying domain. Therefore, non-relational database systems provide a wide variety of database models, like graphs and documents. However, current non-relational database systems face performance challenges due to the end of Dennard scaling and therefore performance scaling of CPUs. In the meanwhile, FPGAs have gained traction as accelerators for data management. Our goal is to tackle the performance challenges of non-relational database systems with FPGA acceleration and, at the same time, address design challenges of FPGA acceleration itself. Therefore, we split this thesis up into two main lines of work: graph processing and flexible data processing. Because of the lacking benchmark practices for graph processing accelerators, we propose GraphSim. GraphSim is able to reproduce runtimes of these accelerators based on a memory access model of the approach. Through this simulation environment, we extract three performance-critical accelerator properties: asynchronous graph processing, compressed graph data structure, and multi-channel memory. Since these accelerator properties have not been combined in one system, we propose GraphScale. GraphScale is the first scalable, asynchronous graph processing accelerator working on a compressed graph and outperforms all state-of-the-art graph processing accelerators. Focusing on accelerator flexibility, we propose PipeJSON as the first FPGA-based JSON parser for arbitrary JSON documents. PipeJSON is able to achieve parsing at line-speed, outperforming the fastest, vectorized parsers for CPUs. Lastly, we propose the subgraph query processing accelerator GraphMatch which outperforms state-of-the-art CPU systems for subgraph query processing and is able to flexibly switch queries during runtime in a matter of clock cycles

RIM: Reconfigurable Instruction Memory Hierarchy for Embedded Systems

Ph.DDOCTOR OF PHILOSOPH

PYDAC: A DISTRIBUTED RUNTIME SYSTEM AND PROGRAMMING MODEL FOR A HETEROGENEOUS MANY-CORE ARCHITECTURE

Heterogeneous many-core architectures that consist of big, fast cores and small, energy-efficient cores are very promising for future high-performance computing (HPC) systems. These architectures offer a good balance between single-threaded perfor- mance and multithreaded throughput. Such systems impose challenges on the design of programming model and runtime system. Specifically, these challenges include (a) how to fully utilize the chip’s performance, (b) how to manage heterogeneous, un- reliable hardware resources, and (c) how to generate and manage a large amount of parallel tasks. This dissertation proposes and evaluates a Python-based programming framework called PyDac. PyDac supports a two-level programming model. At the high level, a programmer creates a very large number of tasks, using the divide-and-conquer strategy. At the low level, tasks are written in imperative programming style. The runtime system seamlessly manages the parallel tasks, system resilience, and inter- task communication with architecture support. PyDac has been implemented on both an field-programmable gate array (FPGA) emulation of an unconventional het- erogeneous architecture and a conventional multicore microprocessor. To evaluate the performance, resilience, and programmability of the proposed system, several micro-benchmarks were developed. We found that (a) the PyDac abstracts away task communication and achieves programmability, (b) the micro-benchmarks are scalable on the hardware prototype, but (predictably) serial operation limits some micro-benchmarks, and (c) the degree of protection versus speed could be varied in redundant threading that is transparent to programmers

Design and Code Optimization for Systems with Next-generation Racetrack Memories

With the rise of computationally expensive application domains such as machine learning, genomics, and fluids simulation, the quest for performance and energy-efficient computing has gained unprecedented momentum. The significant increase in computing and memory devices in modern systems has resulted in an unsustainable surge in energy consumption, a substantial portion of which is attributed to the memory system. The scaling of conventional memory technologies and their suitability for the next-generation system is also questionable. This has led to the emergence and rise of nonvolatile memory ( NVM ) technologies. Today, in different development stages, several NVM technologies are competing for their rapid access to the market. Racetrack memory ( RTM ) is one such nonvolatile memory technology that promises SRAM -comparable latency, reduced energy consumption, and unprecedented density compared to other technologies. However, racetrack memory ( RTM ) is sequential in nature, i.e., data in an RTM cell needs to be shifted to an access port before it can be accessed. These shift operations incur performance and energy penalties. An ideal RTM , requiring at most one shift per access, can easily outperform SRAM . However, in the worst-cast shifting scenario, RTM can be an order of magnitude slower than SRAM . This thesis presents an overview of the RTM device physics, its evolution, strengths and challenges, and its application in the memory subsystem. We develop tools that allow the programmability and modeling of RTM -based systems. For shifts minimization, we propose a set of techniques including optimal, near-optimal, and evolutionary algorithms for efficient scalar and instruction placement in RTMs . For array accesses, we explore schedule and layout transformations that eliminate the longer overhead shifts in RTMs . We present an automatic compilation framework that analyzes static control flow programs and transforms the loop traversal order and memory layout to maximize accesses to consecutive RTM locations and minimize shifts. We develop a simulation framework called RTSim that models various RTM parameters and enables accurate architectural level simulation. Finally, to demonstrate the RTM potential in non-Von-Neumann in-memory computing paradigms, we exploit its device attributes to implement logic and arithmetic operations. As a concrete use-case, we implement an entire hyperdimensional computing framework in RTM to accelerate the language recognition problem. Our evaluation shows considerable performance and energy improvements compared to conventional Von-Neumann models and state-of-the-art accelerators