Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

NASA Tech Briefs, December 2011

Topics covered include: 1) SNE Industrial Fieldbus Interface; 2) Composite Thermal Switch; 3) XMOS XC-2 Development Board for Mechanical Control and Data Collection; 4) Receiver Gain Modulation Circuit; 5) NEXUS Scalable and Distributed Next-Generation Avionics Bus for Space Missions; 6) Digital Interface Board to Control Phase and Amplitude of Four Channels; 7) CoNNeCT Baseband Processor Module; 8) Cryogenic 160-GHz MMIC Heterodyne Receiver Module; 9) Ka-Band, Multi-Gigabit-Per-Second Transceiver; 10) All-Solid-State 2.45-to-2.78-THz Source; 11) Onboard Interferometric SAR Processor for the Ka-Band Radar Interferometer (KaRIn); 12) Space Environments Testbed; 13) High-Performance 3D Articulated Robot Display; 14) Athena; 15) In Situ Surface Characterization; 16) Ndarts; 17) Cryo-Etched Black Silicon for Use as Optical Black; 18) Advanced CO2 Removal and Reduction System; 19) Correcting Thermal Deformations in an Active Composite Reflector; 20) Umbilical Deployment Device; 21) Space Mirror Alignment System; 22) Thermionic Power Cell To Harness Heat Energies for Geothermal Applications; 23) Graph Theory Roots of Spatial Operators for Kinematics and Dynamics; 24) Spacesuit Soft Upper Torso Sizing Systems; 25) Radiation Protection Using Single-Wall Carbon Nanotube Derivatives; 26) PMA-PhyloChip DNA Microarray to Elucidate Viable Microbial Community Structure; 27) Lidar Luminance Quantizer; 28) Distributed Capacitive Sensor for Sample Mass Measurement; 29) Base Flow Model Validation; 30) Minimum Landing Error Powered-Descent Guidance for Planetary Missions; 31) Framework for Integrating Science Data Processing Algorithms Into Process Control Systems; 32) Time Synchronization and Distribution Mechanisms for Space Networks; 33) Local Estimators for Spacecraft Formation Flying; 34) Software-Defined Radio for Space-to-Space Communications; 35) Reflective Occultation Mask for Evaluation of Occulter Designs for Planet Finding; and 36) Molecular Adsorber Coatin

A novel low-temperature growth method of silicon structures and application in flash memory.

Flash memories are solid-state non-volatile memories. They play a vital role especially in information storage in a wide range of consumer electronic devices and applications including smart phones, digital cameras, laptop computers, and satellite navigators. The demand for high density flash has surged as a result of the proliferation of these consumer electronic portable gadgets and the more features they offer – wireless internet, touch screen, video capabilities. The increase in the density of flash memory devices over the years has come as a result of continuous memory cell-size reduction. This size scaling is however approaching a dead end and it is widely agreed that further reduction beyond the 20 nm technological node is going to be very difficult, as it would result to challenges such as cross-talk or cell-to-cell interference, a high statistical variation in the number of stored electrons in the floating gate and high leakage currents due to thinner tunnel oxides. Because of these challenges a wide range of solutions in form of materials and device architectures are being investigated. Among them is three-dimensional (3-D) flash, which is widely acclaimed as the ideal solution, as they promise the integration of long-time retention and ultra-high density cells without compromising device reliability. However, current high temperature (>600 °C) growth techniques of the Polycrystalline silicon floating gate material are incompatible with 3-D flash memory; with vertically stacked memory layers, which require process temperatures to be ≤ 400 °C. There already exist some low temperature techniques for producing polycrystalline silicon such as laser annealing, solid-phase crystallization of amorphous silicon and metal-induced crystallization. However, these have some short-comings which make them not suitable for use in 3-D flash memory, e.g. the high furnace annealing temperatures (700 °C) in solid-phase crystallization of amorphous silicon which could potentially damage underlying memory layers in 3-D flash, and the metal contaminants in metal-induced crystallization which is a potential source of high leakage currents. There is therefore a need for alternative low temperature techniques that would be most suitable for flash memory purposes. With reference to the above, the main objective of this research was to develop a novel low temperature method for growing silicon structures at ≤ 400 °C. This thesis thus describes the development of a low-temperature method for polycrystalline silicon growth and the application of the technique in a capacitor-like flash memory device. It has been demonstrated that silicon structures with polycrystalline silicon-like properties can be grown at ≤ 400 °C in a 13.56 MHz radio frequency (RF) plasma-enhanced chemical vapour deposition (PECVD) reactor with the aid of Nickel Formate Dihydrate (NFD). It is also shown that the NFD coated on the substrates, thermally decomposes in-situ during the deposition process forming Ni particles that act as nucleation and growth sites of polycrystalline silicon. Silicon films grown by this technique and without annealing, have exhibited optical band gaps of ~ 1.2 eV compared to 1.78 eV for films grown under identical conditions but without the substrate being coated. These values were determined from UV-Vis spectroscopy and Tauc plots. These optical band gaps correspond to polycrystalline silicon and amorphous silicon respectively, meaning that the films grown on NFD-coated substrates are polycrystalline silicon while those grown on uncoated substrates remain amorphous. Moreover, this novel technique has been used to fabricate a capacitor-like flash memory that has exhibited hysteresis width corresponding to charge storage density in the order of 1012 cm-2 with a retention time well above 20 days for a device with silicon films grown at 300 °C. Films grown on uncoated films have not exhibit any significant hysteresis, and thus no flash memory-like behaviour. Given that all process temperatures throughout the fabrication of the devices are less than 400 °C and that no annealing of any sort was done on the material and devices, this growth method is thermal budget efficient and meets the crucial process temperature requirements of 3-D flash memory. Furthermore, the technique is glass compatible, which could prove a major step towards the acquisition of flash memory-integrated systems on glass, as well as other applications requiring low temperature polycrystalline silicon

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

History, 643rd Port Company

To all men of the 643rd Port Company: Many things have happened to all of us since that cold morning in February, 1944, when you marched in the snow up the hilly military reservation at Indiantown Gap, Pennsylvania. First, we made soldiers of you indifferent citizens, You were taught many things, some of them useful in war, some useful in peace. To some of you, military life has left a bitter taste. To others it was an opportunity to see the world as well as gaining a new and exciting life as a soldier. Remember this, you were taught to think quickly and to act accordingly. Those of you who are making the Army your career, continue with the same spirit and ambition you have shown in the past. The war is over now, and you who are about to become citizens again, go out in the world and fight. Yes, fight for what is right and live up to your belief in GOD.https://digicom.bpl.lib.me.us/ww_reg_his/1046/thumbnail.jp

NASA Tech Briefs, September 2011

Topics covered include: Fused Reality for Enhanced Flight Test Capabilities; Thermography to Inspect Insulation of Large Cryogenic Tanks; Crush Test Abuse Stand; Test Generator for MATLAB Simulations; Dynamic Monitoring of Cleanroom Fallout Using an Air Particle Counter; Enhancement to Non-Contacting Stress Measurement of Blade Vibration Frequency; Positively Verifying Mating of Previously Unverifiable Flight Connectors; Radiation-Tolerant Intelligent Memory Stack - RTIMS; Ultra-Low-Dropout Linear Regulator; Excitation of a Parallel Plate Waveguide by an Array of Rectangular Waveguides; FPGA for Power Control of MSL Avionics; UAVSAR Active Electronically Scanned Array; Lockout/Tagout (LOTO) Simulator; Silicon Carbide Mounts for Fabry-Perot Interferometers; Measuring the In-Process Figure, Final Prescription, and System Alignment of Large; Optics and Segmented Mirrors Using Lidar Metrology; Fiber-Reinforced Reactive Nano-Epoxy Composites; Polymerization Initiated at the Sidewalls of Carbon Nanotubes; Metal-Matrix/Hollow-Ceramic-Sphere Composites; Piezoelectrically Enhanced Photocathodes; Iridium-Doped Ruthenium Oxide Catalyst for Oxygen Evolution; Improved Mo-Re VPS Alloys for High-Temperature Uses; Data Service Provider Cost Estimation Tool; Hybrid Power Management-Based Vehicle Architecture; Force Limit System; Levitated Duct Fan (LDF) Aircraft Auxiliary Generator; Compact, Two-Sided Structural Cold Plate Configuration; AN Fitting Reconditioning Tool; Active Response Gravity Offload System; Method and Apparatus for Forming Nanodroplets; Rapid Detection of the Varicella Zoster Virus in Saliva; Improved Devices for Collecting Sweat for Chemical Analysis; Phase-Controlled Magnetic Mirror for Wavefront Correction; and Frame-Transfer Gating Raman Spectroscopy for Time-Resolved Multiscalar Combustion Diagnostics

Low-temperature amorphous oxide semiconductors for thin-film transistors and memristors: physical insights and applications

While amorphous oxides semiconductors (AOS), namely InGaZnO (IGZO), have found market application in the display industry, their disruptive properties permit to envisage for more advanced concepts such as System-on-Panel (SoP) in which AOS devices could be used for addressing (and readout) of sensors and displays, for communication, and even for memory as oxide memristors are candidates for the next-generation memories. This work concerns the application of AOS for these applications considering the low thermal budgets (< 180 °C) required for flexible, low cost and alternative substrates. For maintaining low driving voltages, a sputtered multicomponent/multi-layered high-κ dielectric (Ta2O5+SiO2) was developed for low temperature IGZO TFTs which permitted high performance without sacrificing reliability and stability. Devices’ performance under temperature was investigated and the bias and temperature dependent mobility was modelled and included in TCAD simulation. Even for IGZO compositions yielding very high thermal activation, circuit topologies for counteracting both this and the bias stress effect were suggested. Channel length scaling of the devices was investigated, showing that operation for radio frequency identification (RFID) can be achieved without significant performance deterioration from short channel effects, which are attenuated by the high-κ dielectric, as is shown in TCAD simulation. The applicability of these devices in SoP is then exemplified by suggesting a large area flexible radiation sensing system with on-chip clock-generation, sensor matrix addressing and signal read-out, performed by the IGZO TFTs. Application for paper electronics was also shown, in which TCAD simulation was used to investigate on the unconventional floating gate structure. AOS memristors are also presented, with two distinct operation modes that could be envisaged for data storage or for synaptic applications. Employing typical TFT methodologies and materials, these are ease to integrate in oxide SoP architectures

Simulator Networking Handbook: Distributed Interactive Simulation Testbed

Report is an attempt to collect and organize a large body of knowledge regarding the design and development of simulation networks, particularly distributed interactive simulation