In-field Built-in Self-test for Measuring RF Transmitter Power and Gain

abstract: RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed. In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range.Dissertation/ThesisMasters Thesis Electrical Engineering 201

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB

A 64-Channel Mixed-Signal Data Acquisition System for a Solid-State High Efficiency Neutron Detector Array

This thesis presents the design of multiple analog and digital blocks required to implement a desired solid-state data acquisition system for the High Efficiency Neutron Detector Array (HENDA) project under the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL). This system encloses and is an extension of prior work described in [1] and [2]. The first prototype chip, named Patara, contained a charge sensitive front-end amplifier [2], and a semi-Gaussian shaper with baseline restore circuitry [1]. Patara III, described in this thesis, involved the addition of the following system components; two comparators, a selectable synchronous/asynchronous digital backend, priority and binary encoders, nine LVDS drivers/receivers, three 8-bit current driven calibration DAC’s, two BGR’s, and a 99-bit serial shift register with channel test-mode circuitry. The design approach for all major blocks will be discussed along with overall system simulations. In addition, the testing procedure and associated measured results will be summarized illustrating a successful system design. This ASIC was fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35-μm process available through MOSIS

Enhancing Digital Controllability in Wideband RF Transceiver Front-Ends for FTTx Applications

Enhancing the digital controllability of wideband RF transceiver front-ends helps in widening the range of operating conditions and applications in which such systems can be employed. Technology limitations and design challenges often constrain the extensive adoption of digital controllability in RF front-ends. This work focuses on three major aspects associated with the design and implementation of a digitally controllable RF transceiver front-end for enhanced digital control. Firstly, the influence of the choice of semiconductor technology for a system-on-chip integration of digital gain control circuits are investigated. The digital control of gain is achieved by utilizing step attenuators that consist of cascaded switched attenuation stages. A design methodology is presented to evaluate the influence of the chosen technology on the performance of the three conventionally used switched attenuator topologies for desired attenuation levels, and the constraints that the technology suitable for high amplification places on the attenuator performance are examined. Secondly, a novel approach to the integrated implementation of gain slope equalization is presented, and the suitability of the proposed approach for integration within the RF front-end is verified. Thirdly, a sensitivity-aware implementation of a peak power detector is presented. The increased employment of digital gain control also increases the requirements on the sensitivity of the power detector employed for adaptive power and gain control. The design, implementation, and measurement results of a state-of-the-art wideband power detector with high sensitivity and large dynamic range are presented. The design is optimized to provide a large offset cancellation range, and the influence of offset cancellation circuits on the sensitivity of the power detector is studied. Moreover, design considerations for high sensitivity performance of the power detector are investigated, and the noise contributions from individual sub-circuits are evaluated. Finally, a wideband RF transceiver front-end is realized using a commercially available SiGe BiCMOS technology to demonstrate the enhancements in the digital controllability of the system. The RF front-end has a bandwidth of 500 MHz to 2.5 GHz, an input dynamic range of 20 dB, a digital gain control range larger than 30 dB, a digital gain slope equalization range from 1.49 dB/GHz to 3.78 dB/GHz, and employs a power detector with a sensitivity of -56 dBm and dynamic range of 64 dB. The digital control in the RF front-end is implemented using an on-chip serial-parallel-interface (SPI) that is controlled by an external micro-controller. A prototype implementation of the RF front-end system is presented as part of an RFIC intended for use in optical transceiver modules for fiber-to-the-x applications

Low-Overhead Built-In Self-Test for Advanced RF Transceiver Architectures

abstract: Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed. Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced. Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method. Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed. Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated

High-frequency silicon-germanium reconfigurable circuits for radar, communication, and radiometry applications

The objective of the proposed research is to create new reconfigurable RF and millimeter-wave circuit topologies that enable significant systems benefits. The market of RF systems has long evolved under a paradigm where once a system is built, performance cannot be changed. Companies have recognized that building flexibility into RF systems and providing mechanisms to reconfigure the RF performance can enable significant benefits, including: the ability support multiple modulation schemes and standards, the reduction of product size and overdesign, the ability to adapt to environmental conditions, the improvement in spectrum utilization, and the ability to calibrate, characterize, and monitor system performance. This work demonstrates X-band LNA designs with the ability to change the frequency of operation, improve linearity, and digitally control the tradeoff between performance and power dissipation. At W-band frequencies, a novel device configuration is developed, which significantly improves state-of-the-art silicon-based switch performance. The excellent switch performance is leveraged to address major issues in current millimeter-wave systems. A front-end built-in-self-test switch topology is developed to facilitate the characterization of millimeter-wave transceivers without expensive millimeter-wave equipment. A highly integrated Dicke radiometer is also created to enable sensitive measurements of thermal noise.Ph.D

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Programmable CMOS Analog-to-Digital Converter Design and Testability

In this work, a programmable second order oversampling CMOS delta-sigma analog-to-digital converter (ADC) design in 0.5µm n-well CMOS processes is presented for integration in sensor nodes for wireless sensor networks. The digital cascaded integrator comb (CIC) decimation filter is designed to operate at three different oversampling ratios of 16, 32 and 64 to give three different resolutions of 9, 12 and 14 bits, respectively which impact the power consumption of the sensor nodes. Since the major part of power consumed in the CIC decimator is by the integrators, an alternate design is introduced by inserting coder circuits and reusing the same integrators for different resolutions and oversampling ratios to reduce power consumption. The measured peak signal-to-noise ratio (SNR) for the designed second order delta-sigma modulator is 75.6dB at an oversampling ratio of 64, 62.3dB at an oversampling ratio of 32 and 45.3dB at an oversampling ratio of 16. The implementation of a built-in current sensor (BICS) which takes into account the increased background current of defect-free circuits and the effects of process variation on ΔIDDQ testing of CMOS data converters is also presented. The BICS uses frequency as the output for fault detection in CUT. A fault is detected when the output frequency deviates more than ±10% from the reference frequency. The output frequencies of the BICS for various model parameters are simulated to check for the effect of process variation on the frequency deviation. A design for on-chip testability of CMOS ADC by linear ramp histogram technique using synchronous counter as register in code detection unit (CDU) is also presented. A brief overview of the histogram technique, the formulae used to calculate the ADC parameters, the design implemented in 0.5µm n-well CMOS process, the results and effectiveness of the design are described. Registers in this design are replaced by 6T-SRAM cells and a hardware optimized on-chip testability of CMOS ADC by linear ramp histogram technique using 6T-SRAM as register in CDU is presented. The on-chip linear ramp histogram technique can be seamlessly combined with ΔIDDQ technique for improved testability, increased fault coverage and reliable operation