Continuous-Time ΣΔ ADC with Implicit Variable Gain Amplifier for CMOS Image Sensor

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 m CMOS process and the measurement result shows an ADC power consumption lower than 63.5 W under 1.4 V power supply and 50 MHz clock frequency

A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors

A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 × 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 μm Standard CMOS process. The area size of chip is 1.5 mm × 3.5 mm. Each pixel size is 9.5 μm × 9.5 μm and each processing element size is 23 μm × 29 μm. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking

High Speed CMOS Image Sensor

abstract: High speed image sensors are used as a diagnostic tool to analyze high speed processes for industrial, automotive, defense and biomedical application. The high fame rate of these sensors, capture a series of images that enables the viewer to understand and analyze the high speed phenomena. However, the pixel readout circuits designed for these sensors with a high frame rate (100fps to 1 Mfps) have a very low fill factor which are less than 58%. For high speed operation, the exposure time is less and (or) the light intensity incident on the image sensor is less. This makes it difficult for the sensor to detect faint light signals and gives a lower limit on the signal levels being detected by the sensor. Moreover, the leakage paths in the pixel readout circuit also sets a limit on the signal level being detected. Therefore, the fill factor of the pixel should be maximized and the leakage currents in the readout circuits should be minimized. This thesis work presents the design of the pixel readout circuit suitable for high speed and low light imaging application. The circuit is an improvement to the 6T pixel readout architecture. The designed readout circuit minimizes the leakage currents in the circuit and detects light producing a signal level of 350µV at the cathode of the photodiode. A novel layout technique is used for the pixel, which improves the fill factor of the pixel to 64.625%. The read out circuit designed is an integral part of high speed image sensor, which is fabricated using a 0.18 µm CMOS technology with the die size of 3.1mm x 3.4 mm, the pixel size of 20µm x 20 µm, number of pixel of 96 x 96 and four 10-bit pipelined ADC’s. The image sensor achieves a high frame rate of 10508 fps and readout speed of 96 M pixels / sec.Dissertation/ThesisMasters Thesis Electrical Engineering 201

High Speed Camera Chip

abstract: The market for high speed camera chips, or image sensors, has experienced rapid growth over the past decades owing to its broad application space in security, biomedical equipment, and mobile devices. CMOS (complementary metal-oxide-semiconductor) technology has significantly improved the performance of the high speed camera chip by enabling the monolithic integration of pixel circuits and on-chip analog-to-digital conversion. However, for low light intensity applications, many CMOS image sensors have a sub-optimum dynamic range, particularly in high speed operation. Thus the requirements for a sensor to have a high frame rate and high fill factor is attracting more attention. Another drawback for the high speed camera chip is its high power demands due to its high operating frequency. Therefore, a CMOS image sensor with high frame rate, high fill factor, high voltage range and low power is difficult to realize. This thesis presents the design of pixel circuit, the pixel array and column readout chain for a high speed camera chip. An integrated PN (positive-negative) junction photodiode and an accompanying ten transistor pixel circuit are implemented using a 0.18 µm CMOS technology. Multiple methods are applied to minimize the subthreshold currents, which is critical for low light detection. A layout sharing technique is used to increase the fill factor to 64.63%. Four programmable gain amplifiers (PGAs) and 10-bit pipeline analog-to-digital converters (ADCs) are added to complete on-chip analog to digital conversion. The simulation results of extracted circuit indicate ENOB (effective number of bits) is greater than 8 bits with FoM (figures of merit) =0.789. The minimum detectable voltage level is determined to be 470μV based on noise analysis. The total power consumption of PGA and ADC is 8.2mW for each conversion. The whole camera chip reaches 10508 frames per second (fps) at full resolution with 3.1mm x 3.4mm area.Dissertation/ThesisMasters Thesis Electrical Engineering 201

A full-custom digital-signal-processing unit for real-time cortical blood flow monitoring

Master'sMASTER OF ENGINEERIN

Pixels for focal-plane scale space generation and for high dynamic range imaging

Focal-plane processing allows for parallel processing throughout the entire pixel matrix, which can help increasing the speed of vision systems. The fabrication of circuits inside the pixel matrix increases the pixel pitch and reduces the fill factor, which leads to reduced image quality. To take advantage of the focal-plane processing capabilities and minimize image quality reduction, we first consider the inclusion of only two extra transistors in the pixel, allowing for scale space generation at the focal plane. We assess the conditions in which the proposed circuitry is advantageous. We perform a time and energy analysis of this approach in comparison to a digital solution. Considering that a SAR ADC per column is used and the clock frequency is equal to 5.6 MHz, the proposed analysis show that the focal-plane approach is 26 times faster if the digital solution uses 10 processing elements, and 49 times more energy-efficient. Another way of taking advantage of the focal-plane signal processing capability is by using focal-plane processing for increasing image quality itself, such as in the case of high dynamic range imaging pixels. This work also presents the design and study of a pixel that captures high dynamic range images by sensing the matrix average luminance, and then adjusting the integration time of each pixel according to the global average and to the local value of the pixel. This pixel was implemented considering small structural variations, such as different photodiode sizes for global average luminance measurement. Schematic and post-layout simulations were performed with the implemented pixel using an input image of 76 dB, presenting results with details in both dark and bright image areas.O processamento no plano focal de imageadores permite que a imagem capturada seja processada em paralelo por toda a matrix de pixels, característica que pode aumentar a velocidade de sistemas de visão. Ao fabricar circuitos dentro da matrix de pixels, o tamanho do pixel aumenta e a razão entre área fotossensível e a área total do pixel diminui, reduzindo a qualidade da imagem. Para utilizar as vantagens do processamento no plano focal e minimizar a redução da qualidade da imagem, a primeira parte da tese propõe a inclusão de dois transistores no pixel, o que permite que o espaço de escalas da imagem capturada seja gerado. Nós então avaliamos em quais condições o circuito proposto é vantajoso. Nós analisamos o tempo de processamento e o consumo de energia dessa proposta em comparação com uma solução digital. Utilizando um conversor de aproximações sucessivas com frequência de 5.6 MHz, a análise proposta mostra que a abordagem no plano focal é 26 vezes mais rápida que o circuito digital com 10 elementos de processamento, e consome 49 vezes menos energia. Outra maneira de utilizar processamento no plano focal consiste em aplicá-lo para melhorar a qualidade da imagem, como na captura de imagens em alta faixa dinâmica. Esta tese também apresenta o estudo e projeto de um pixel que realiza a captura de imagens em alta faixa dinâmica através do ajuste do tempo de integração de cada pixel utilizando a iluminação média e o valor do próprio pixel. Esse pixel foi projetado considerando pequenas variações estruturais, como diferentes tamanhos do fotodiodo que realiza a captura do valor de iluminação médio. Simulações de esquemático e pós-layout foram realizadas com o pixel projetado utilizando uma imagem com faixa dinâmica de 76 dB, apresentando resultados com detalhes tanto na parte clara como na parte escura da imagem

Development of a Portable CMOS Time-Domain Fluorescence Lifetime Imager

Modern laboratory equipments to measure the excited-state lifetime of fluorophores usually include an expensive picosecond pulsed-laser excitation source, a fragile photomultiplier tube, and a large instrument body for optics. A portable and robust device to make fluorescence lifetime measurement in nanosecond scale is of great attraction for chemists and biologists. This dissertation reports the development of a portable LED time-domain fluorimeter from an all-solid-state discrete-component prototype to its advanced CMOS integrated circuit implementation. The motivation of the research is to develop a multiplexed fluorimeter for point-of-care diagnosis. Instruments developed by this novel method have higher fill factor, are more portable, and are fabricated at lower cost

Energy Efficient Techniques For Algorithmic Analog-To-Digital Converters

Analog-to-digital converters (ADCs) are key design blocks in state-of-art image, capacitive, and biomedical sensing applications. In these sensing applications, algorithmic ADCs are the preferred choice due to their high resolution and low area advantages. Algorithmic ADCs are based on the same operating principle as that of pipelined ADCs. Unlike pipelined ADCs where the residue is transferred to the next stage, an N-bit algorithmic ADC utilizes the same hardware N-times for each bit of resolution. Due to the cyclic nature of algorithmic ADCs, many of the low power techniques applicable to pipelined ADCs cannot be directly applied to algorithmic ADCs. Consequently, compared to those of pipelined ADCs, the traditional implementations of algorithmic ADCs are power inefficient. This thesis presents two novel energy efficient techniques for algorithmic ADCs. The first technique modifies the capacitors' arrangement of a conventional flip-around configuration and amplifier sharing technique, resulting in a low power and low area design solution. The other technique is based on the unit multiplying-digital-to-analog-converter approach. The proposed approach exploits the power saving advantages of capacitor-shared technique and capacitor-scaled technique. It is shown that, compared to conventional techniques, the proposed techniques reduce the power consumption of algorithmic ADCs by more than 85\%. To verify the effectiveness of such approaches, two prototype chips, a 10-bit 5 MS/s and a 12-bit 10 MS/s ADCs, are implemented in a 130-nm CMOS process. Detailed design considerations are discussed as well as the simulation and measurement results. According to the simulation results, both designs achieve figures-of-merit of approximately 60 fJ/step, making them some of the most power efficient ADCs to date