Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

Digital Friendly Continuous-Time Delta-Sigma Analog-to-Digital Converters

Conventional Delta-Sigma analog-to-digital converters (ADCs) utilize operational transconductance amplifiers (OTAs) in their loop filter implementation followed by multi-bit voltage domain quantizers. As CMOS integrated circuit technology scales to smaller geometries, the minimum transistor length and the intrinsic gain of the transistors decrease. Moreover, with process scaling the voltage headroom decreases as well. Therefore, designing OTAs in advanced CMOS processes is becoming increasingly difficult. Additionally, multibit quantizers are becoming more difficult to design due to the decreased voltage headroom and the challenges of low offset and noise requirements. In this thesis, alternative digital solutions are introduced to replace traditional analog blocks. In the proposed solutions, compressed voltage-domain processing is shifted to the time-domain which benefits from process scaling as the transistors scale down in size and become faster. First, a novel highly linear VCO-based 1-1 multi stage noise shaping (MASH) delta-sigma ADC structure is presented. The proposed architecture does not require any OTA-based analog integrators or integrating capacitors. Second-order noise shaping is achieved by using a VCO as an integrator in the feedback loop of the first stage and an open loop VCO quantizer in the second stage. A prototype was fabricated in a 65nm CMOS process and achieves 79.7 dB SNDR for a 2MHz signal bandwidth. Second, a novel time-domain phase quantization noise extraction for a VCO-based quantizer is introduced. This technique is independent of the OSR and the input signal amplitude of the VCO-based quantizer making it attractive for higher bandwidth applications. Using this technique, a novel 0-1-1 MASH ADC is presented. The first stage is implemented using a 4-bit SAR ADC. The second and the third stages use a VCO-based quantizer (VCOQ). Behavioral simulation results con�rm second-order noise shaping with a 75dB SNDR for an OSR of 20

Efficient Continuous-Time Sigma-Delta Converters for High Frequency Applications

Over the years Continuous-Time (CT) Sigma-Delta (ΣΔ) modulators have received a lot of attention due to their ability to efficiently digitize a variety of signals, and suitability for many different applications. Because of their tolerance to component mismatch, the easy to drive input structure, as well as intrinsic anti-aliasing filtering and noise shaping abilities, CTΣΔ modulators have become one of the most popular data-converter type for high dynamic range and moderate/wide bandwidth. This trend is the result of faster CMOS technologies along with design innovations such as better architectures and faster amplifiers. In other words, CTΣΔ modulators are starting to offer the best of both worlds, with high resolution and high bandwidth. This dissertation focuses on the bandwidth and resolution of CTΣΔ modulators. The goal of this research is to use the noise shaping benefits of CTΣΔ modulators for different wireless applications, while achieving high resolution and/or wide bandwidth. For this purpose, this research focuses on two different application areas that demand speed and resolution. These are a low-noise high-resolution time-to-digital converter (TDC), ideal for digital phase lock loops (PLL), and a very high-speed, wide-bandwidth CTΣΔ modulator for wireless communication. The first part of this dissertation presents a new noise shaping time-to-digital converter, based on a CTΣΔ modulator. This is intended to reduce the in-band phase noise of a high frequency digital phase lock loop (PLL) without reducing its loop bandwidth. To prove the effectiveness of the proposed TDC, 30GHz and a 40GHz fractional-N digital PLL are designed as a signal sources for a 240GHz FMCW radar system. Both prototypes are fabricated in a 65nm CMOS process. The standalone TDC achieves 81dB dynamic range and 13.2 equivalent number of bits (ENOB) with 176fs integrated-rms noise from 1MHz bandwidth. The in-band phase noise of the 30GHz digital fractional-N PLL is measured as -87dBc/Hz at a 100kHz offset which is equivalent to -212.6dBc/Hz2 normalized in-band phase noise. The second part of this dissertation focuses on high-speed (GS/s) CTΣΔ modulators for wireless communication, and introduces a new time-interleaved reference data weighted averaging (TI-RDWA) architecture suitable for GS/s CTΣΔ modulators. This new architecture shapes the digital-to-analog converter (DAC) mismatch effects in a CTΣΔ modulator at GS/s operating speeds. It allows us to use smaller DAC unit sizes to reduce area and power consumption for the same bandwidth. The prototype 5GS/s CTΣΔ modulator with TI-RDWA is fabricated in 40nm CMOS and it achieves 156MHz bandwidth, 70dB dynamic range, 84dB SFDR and a Schreier FoM of 158.3dB.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138763/1/bdayanik_1.pd

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Voltage and Time-Domain Analog Circuit Techniques for Scaled CMOS Technologies

CMOS technology scaling has resulted in reduced supply voltage and intrinsic voltage gain of the transistor. This presents challenges to the analog circuit designers due to lower signal swing and achievable signal to noise ratio (SNR), leading to increased power consumption. At the same time, device speed has increased in lower design nodes, which has not been directly beneficial for analog circuit design. This thesis presents voltage-domain and time-domain circuit scaling friendly circuit architectures that minimize the power consumption and benefit from the increasing transistor speeds. In the voltage-domain, an on-the-fly gain selection block is demonstrated as an alternative to the traditional MDAC architecture to enhance the input dynamic range of a medium-resolution medium-speed analog-to-digital converter (ADC) at reduced supply voltages. The proposed design also eliminates the need for a reference buffer, thus providing power savings. The measured prototype enhances the input dynamic range of a 12bit, 40MSPS ADC to 80.6dB at 1.2V supply voltage. In the time-domain, a generic circuit design approach is presented, followed by an in-depth analysis of Voltage-Controlled-Oscillator based Operational Transconductance Amplifiers (VCO-OTAs). A discrete-time-domain small-signal model based on the zero crossings of the internal VCOs is developed to predict the stability, the step response, and the frequency response of the circuit when placed in feedback. The model accurately predicts the circuit behavior for an arbitrary input frequency, even as the VCO free-running frequency approaches the unity-gain bandwidth of the closed-loop system, where other intuitive small-signal models available in the literature fail. Next, we present an application of VCO-OTA in designing a baseband trans-impedance amplifier (TIA) for current-mode receivers as a scaling-friendly and power-efficient alternative to the inverter-based OTA. We illustrate a design methodology for the choice of the VCO-OTA parameters in the context of a receiver design with an example of a 20MHz RF-channel-bandwidth receiver operating at 2GHz. Receiver simulation results demonstrate an improvement of up to 12dB in blocker 1dB compression point (B1dB) for slightly higher power consumption or up to 2.6x power reduction of the TIA resulting in up to 2x power reduction of the receiver for similar B1dB performance. Next, we present some examples of VCO-OTAs. We first illustrate the benefit of a VCO-OTA in a low-dropout-voltage regulator to achieve a dropout voltage of only100mV and operating down to 0.8V input supply, compared to the prototype based on traditional OTA with a minimum dropout voltage of 150mV, operating at a minimum of 1.2V supply. Both the capacitor-less prototypes can drive up to 1nF load capacitor and provide a current of 60mA. The next prototype showcases a method to reduce the power consumption of a VCO-OTA and spurs at the VCO frequency, with an application in the design of a fourth-order Butterworth filter at 4MHz. The thesis concludes with a design example of 0.2V VCO-OTA

Energy-efficient data converter design in scaled CMOS technology

Data converters bridge the physical and digital worlds. They have been the crucial building blocks in modern electronic systems, and are expected to have a growing significance in the booming era of Internet-of-Things (IoT) and 5G communications. The applications raise energy-efficiency requirements for both low-speed and high-speed converters since they are widely deployed in wireless sensor nodes and portable devices. To explore the solutions, the author worked on three directions: 1) techniques to improve the efficiency of the low-speed converters including the comparator; 2) techniques to develop high-speed data converters including the reference stabilization; 3) new architecture to improve the efficiency of the capacitance-to-digital converter (CDC). In the first part, a power-efficient 10-bit SAR ADC featured with a gain-boosted dynamic comparator is presented. In energy-constrained applications, the converter is usually supplied with low supply voltage (e.g., 0.3 V-0.5 V), which reduces the comparator pre-amplifier (pre-amp) gain and results in higher noise. A novel comparator topology with a dynamic common-gate stage is proposed to increase the pre-amplification gain, thereby reducing noise and offset. Besides, statistical estimation and loading switching techniques are combined to further improve energy efficiency. A 40-nm CMOS prototype achieves a Walden FoM of 1.5 fJ/conversion-step while operating at 100-kS/s from a 0.5-V supply. To further improve the energy-efficiency of the comparator, a novel dynamic pre-amp is proposed. By using an inverter-based input pair powered by a floating reservoir capacitor, the pre-amp realizes both current reuse and dynamic bias, thereby significantly boosting g [subscript m] /I [subscript D] and reducing noise. Moreover, it greatly reduces the influence of the input common-mode (CM) voltage on the comparator performance, including noise, offset, and delay. A prototype comparator in 180-nm achieves 46-μV input-referred noise while consuming only 1 pJ per comparison under 1.2-V supply, which represents greater than 7 times energy efficiency boost compared to that of a Strong-Arm (SA) latch. The second part of this dissertation focuses on high-speed data converter techniques. A 10-bit high-speed two-stage loop-unrolled SAR ADC is presented. To reduce the SAR logic delay and power, each bit uses a dedicated comparator to store its output and generate an asynchronous clock for the next comparison. To suppress the comparator offset mismatch induced non-linearity, a shared pre-amp are employed in the second fine stage, which is implemented by a dynamic latch to avoid static power consumption. The prototype ADC in 40-nm CMOS achieves 55-dB peak SNDR at 200-MS/s sampling rate without any calibration. A key limiting factor for the SAR ADC to simultaneously achieve high speed and high resolution is the reference ripple settling problem caused by DAC switching. Unlike prior techniques that aim to minimize the reference ripple which requires large reference buffer power or on-chip decoupling capacitance area, this work proposes a new perspective: it provides an extra path for the full-sized reference ripple to couple to the comparator but with an opposite polarity, so that the effect of the reference ripple is canceled out, thus ensuring an accurate conversion result. The prototype 10-bit 120-MS/s SAR ADC is fabricated in 40-nm CMOS process and achieves an SNDR of 55 dB with only 3 pF reference decoupling capacitor. Finally, this dissertation also presents the design of an incremental time-domain two-step CDC. Unlike the classic two-step CDC, this work replaces the OTA-based active-RC integrator with a VCO-based integrator and performs time domain (TD) ΔΣ modulation. The VCO is mostly digital and consumes low power. Featuring the infinite DC gain in phase domain and intrinsic spatial phase quantization, this TDΔΣ enables a CDC design, achieving 85-dB SQNR by having only a 4-bit quantizer, a 1st-order loop and a low OSR of 15. The prototype fabricated in 40-nm CMOS achieves a resolution of 0.29 fF while dissipating only 0.083 nJ per conversion, which improves the energy efficiency by greater than 2 times comparing to that of state-of-the-art CDCsElectrical and Computer Engineerin

A 90.5dB DR 1MHz BW Hybrid Two Step ADC with CT Incremental and SAR ADCs

The sensors in real time data processing IoT devices require high resolution and sub-MHz data converters, usually implemented as Incremental ADCs due to the advantages of oversampling technique and low latency. In discrete time incremental (IDT) ADCs, the sampling switch non-linearity, charge injection degrade the resolution, and power hungry OPAMPs are demanded to provide fast and accurate settling for the switch-capacitor circuits. While the continuous time incremental (ICT) ADCs overcome these issues by removing the sampling switches and it also relax the OPAMPs settling accuracy to save power. A hybrid architecture of ICT ADC and SAR two step ADC is proposed to achieve high resolution at low oversampling ratio (OSR). The first ICT ADCs enable higher resolution, faster conversion speed with lower power consumption. The residual error of the ICT ADC is extracted at the last integrator output and transfers to the 2nd SAR for further conversion. In this architecture, only the mismatch between the cascade of integrators (CoIs) and decimation filter transfer functions causes 1st stage quantization noise leakage which can be solved by increasing opamp parameters instead of increasing the digital decimation filter complexity. In addition, the overall SQNR is independent of the first ICT ADC’s NTF, which gives more freedom to trade-off between the loop stability and DAC errors. A 4bits DRZ DAC with data weighted averaging (DWA) technique is adopted to reduce the clock jitter of DAC, mitigate ISI error and static mismatch errors. Based on this architecture, a 16b resolution, 1MHz signal bandwidth hybrid two step ADC is designed and measurement results are demonstrated. Important sub circuits are introduced and analyzed in detail to get the target resolution. The ADC is fabricated in AKM 180nm CMOS process with 1.8V supply voltage, it achieves a DR of 90.5dB, and SNR/SFDR/SNDR of 82.5dB/85dB/80.5dB over 1MHz BW sampled at 64MHz

Design of Analog-to-Digital Converters with Embedded Mixing for Ultra-Low-Power Radio Receivers

In the field of radio receivers, down-conversion methods usually rely on one (or more) explicit mixing stage(s) before the analog-to-digital converter (ADC). These stages not only contribute to the overall power consumption but also have an impact on area and can compromise the receiver’s performance in terms of noise and linearity. On the other hand, most ADCs require some sort of reference signal in order to properly digitize an analog input signal. The implementation of this reference signal usually relies on bandgap circuits and reference buffers to generate a constant, stable, dc signal. Disregarding this conventional approach, the work developed in this thesis aims to explore the viability behind the usage of a variable reference signal. Moreover, it demonstrates that not only can an input signal be properly digitized, but also shifted up and down in frequency, effectively embedding the mixing operation in an ADC. As a result, ADCs in receiver chains can perform double-duty as both a quantizer and a mixing stage. The lesser known charge-sharing (CS) topology, within the successive approximation register (SAR) ADCs, is used for a practical implementation, due to its feature of “pre-charging” the reference signal prior to the conversion. Simulation results from an 8-bit CS-SAR ADC designed in a 0.13 μm CMOS technology validate the proposed technique

Design of a Digital Temperature Sensor based on Thermal Diffusivity in a Nanoscale CMOS Technology

Temperature sensors are widely used in microprocessors to monitor on-chip temperature gradients and hot-spots, which are known to negatively impact reliability. Such sensors should be small to facilitate floor planning, fast to track millisecond thermal transients, and easy to trim to reduce the associated costs. Recently, it has been shown that thermal diffusivity (TD) sensors can meet these requirements. These sensors operate by digitalizing the temperature-dependent delay associated with the diffusion of heat pulses through an electro-thermal filter (ETF), which, in standard CMOS, can be readily implemented as a resistive heater surrounded by a thermopile. Unlike BJT-based temperature sensors, their accuracy actually improves with CMOS scaling, since it is mainly limited by the accuracy of the heather/thermopile spacing. In this work is presented the electrical design of an highly digital TD sensor in 0.13 µm CMOS with an accuracy better than 1 ºC resolution at with 1 kS/s sampling rate, and which compares favourably to state-of-the-art sensors with similar accuracy and sampling rates [1][2][3][4]. This advance is mainly enabled by the adoption of a highly digital CCO-based phasedomain ΔΣ ADC. The TD sensor presented consists of an ETF, a transconductance stage, a current-controlled oscillator (CCO) and a 6 bit digital counter. In order to be easily ported to nanoscale CMOS technologies, it is proposed to use a sigmadelta modulator based on a CCO as an alternative to traditional modulators. And since 70% of the sensor’s area is occupied by digital circuitry, porting the sensor to latest CMOS technologies process should reduce substantially the occupied die area, and thus reduce significantly the total sensor area

Current-mode processing based Temperature-to-Digital Converters for MEMS applications

This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results.This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results