Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

A Development of Thin Films and Laser Processes for Patterning of Textured Silicon Solar Cells

abstract: This work explores the application and optimization of laser patterning of dielectrics on textured crystalline silicon for improving the performance of industrial silicon solar cells. Current direct laser patterning processes introduce defects to the surface of the solar cell as a result of the film transparency and the intensity variation of the laser induced by the textured surface. As a means of overcoming these challenges, a co-deposited protective masking film was developed that is directly patterned with laser light at greatly depreciated light intensities that allows for selective chemical etching of the underlying dielectric films without incurring substantial defects to the surface of the device. Initial defects produced by the process are carefully evaluated with electron microscopy techniques and their mechanism for generation is identified and compensated. Further, an analysis of the opening fraction within the laser spot is evaluated –the area of removed film within the laser spot divided by the area of the laser spot– and residue produced by the laser process within the contact opening is studied. Once identified, this non-damaging laser process is a promising alternative to the standard screen print and fire process currently used by industry for metallization of silicon solar cells. Smaller contacts may be made with the laser process that are as of yet unattainable with screen printing, allowing for a decrease in shading losses. Additionally, the use of patterning allows for silver-free metallization and improved conductivity in the contacts, thereby decreasing parasitic losses in the device.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Computational modelling of the effect of side chain chemistry on the micro-structure and electrolyte interactions of mixed transport polymers

As we scale up our use of energy storage facilities to meet the demands of the future, the prob- lems associated with current energy storage technologies will grow to unacceptable levels. In this work I explore how we can develop high performing polymers for use as cathode materials in energy storage devices operating with aqueous electrolytes. Energy storage devices using these materials have the potential for low cost production and safe operation. Through a combination of atomistic simulation methods, this thesis relates aspects of the polymer chemistry to their microstructural properties, and subsequently to their ability to operate successfully as electrodes.Open Acces

Hydrothermal Synthesis of Frustrated Lanthanide Pyrochlores and Transition Metal Double Perovskites and Germanates

Magnetically frustrated materials hold promise of unique behavior allowing for the novel study of quantum phenomena. Such materials are poised to become an integral foundation for technological advancement in the post-Silicon Age. Crystalline materials are given special focus where the rigid lattice allows more detailed study of these quantized effects and frustration behavior. As opposed to polycrystalline powders, large single crystals can be preferentially aligned enabling the study of anisotropic behavior. Two cubic structure types have garnered significant interest due to their 3-D tetrahedral arrangement of symmetry-related metal centers with the potential for magnetic frustration: pyrochlores and perovskites. The supercritical hydrothermal crystal growth technique has been applied to a host of refractory oxides to enhance phase purity and minimize crystalline defects often introduced by conventional flux or melt-based based techniques. The supercritical growth in aqueous alkali at temperatures much lower than those of floating zone melts, while maintaining a sealed environment, avoids the possibility for reactant sublimation. In comparison to melt-based techniques, the modest thermal conditions also aid in minimizing atomic site displacements by insertion into different sites than those expected (“stuffing”). Through supercritical hydrothermal conditions, it was possible to obtain the entire series of lanthanide stannate pyrochlores. Stannous oxide, originally applied for in situ ceria reduction, was found beneficial for all lanthanide oxide reactants regardless of oxidation state allowing facile growth of faceted, mm-scale stannate octahedra in only days. This has allowed for the first single-crystal neutron scattering study of the quantum spin liquid candidate Ce2Sn2O7 with similar experiments to follow across the lanthanide series. The sealed, pressurized supercritical hydrothermal technique was also applied in the growth of stoichiometric orthoscandates and site-ordered cubic barium double perovskites. Both systems had structures occur in crystallographic settings previously only possible through thin-film epitaxial growth or application of high pressures and temperatures. Attempts to expand the palette of lanthanide-containing germanium perovskites yielded novel P212121 LnTM(GeO4)(OH) (TM = 3d transition metal) adelite-type structures possessing chiral [TMO4]∞ a-axis chains. These adelites demonstrated the first known inclusion of lanthanides and germanium in the adelite-descloizite supergroup. The synthetic possibilities of the refractory lanthanide oxides and often-overlooked germanium offer great synthetic possibilities poised to further expand the adelite family while also providing a few magnetically frustrated surprises themselves or through the high-symmetry cubic garnet and spinel products encountered during exploratory adelite synthesis under hydrothermal conditions

Substrate noise analysis and techniques for mitigation in mixed-signal RF systems

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Includes bibliographical references (p. 151-158).Mixed-signal circuit design has historically been a challenge for several reasons. Parasitic interactions between analog and digital systems on a single die are one such challenge. Switching transients induced by digital circuits inject noise into the common substrate creating substrate noise. Analog circuits lack the large noise margins of digital circuits, thus making them susceptible to substrate voltage variations. This problem is exacerbated at higher frequencies as the effectiveness of standard isolation technique diminishes considerably. Historically, substrate noise was not a problem because each system was fabricated in its own package shielding it from such interactions. The work in this thesis spans all areas of substrate noise: generation, propagation, and reception. A set of guidelines in designing isolation structures was developed to assist designers in optimizing these structures for a particular application. Furthermore, the effect of substrate noise on two key components of the RF front end, the voltage controlled oscillator (VCO) and the low noise amplifier (LNA), was analyzed. Finally, a CAD tool (SNAT) was developed to efficiently simulate large digital designs to determine substrate noise performance.(cont.) Existing techniques have prohibitively long simulation times and are only suitable for final verification. Determination of substrate noise coupling during the design phase would be extremely beneficial to circuit designers who can incorporate the effect of the noise and re-design accordingly before fabrication. This would reduce the turn around time for circuits and prevent costly redesign. SNAT can be used at any stage of the design cycle to accurately predict (less than 12% error when compared to measurements) the substrate noise performance of any digital circuit with a large degree of computational efficiency.by Nisha Checka.Ph.D

First order Bragg grating filters in silicon on insulator waveguides.

The subject of this thesis is the design; analysis, fabrication and characterisation of first order Bragg Grating optical filters in Silicon-on-Insulator (SOI) planar waveguides. It is envisaged that this work will result in the possibility of Bragg Grating filters for use in Silicon Photonics. It is the purpose of the work to create as far as is possible flat surface waveguides so as to facilitate Thermo-Optic tuning and also the incorporation into rib-waveguide Silicon Photonics. The spectral response of the shallow Bragg Gratings was modelled using Coupled Mode Theory (CMT) by way of RSoft Gratingmod TM. Also the effect of having a Bragg Grating with alternate layers of refractive index 1.5 and 3.5 was simulated in order to verify that Silica and Silicon layered Bragg Gratings could be viable. A series of Bragg Gratings were patterned on 1.5 micron SOI at Philips in Eindhoven to investigate the variation of grating parameters with a) the period of the gratings b) the duty cycle (or mark to space ratio) of the gratings and c) the length of the region converted to Bragg Gratings (i.e. the number of grating period repetitions). One set of gratings were thermally oxidised at Philips in Eindhoven (this was to simulate the effects of oxidising Porous Silicon) and another set were ion implanted with Oxygen ions at the Ion Beam Facility, University of Surrey. The gratings were tested and found to give transmission minima at approximately 1540 nanometres and both methods of creating flat surfaces were found to give similar minima. Atomic Force Microscopy was applied to the grating area of the Ion as Implanted samples in the ATI, University of Surrey, which were found to have surface undulations in the order of 60 nanometres

Advances in Solid State Circuit Technologies

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