NOISE SHAPING IN SAR ADC

The successive approximation register (SAR) analog-to-digital converter (ADC) is currently the most popular type of ADC architecture, owing to its power efficiency. They are also used in multichannel systems, where power efficiency is of high importance because of the large number of simultaneously working channels. However, the SAR ADC architecture is not the most area efficient. In SAR ADCs, the binary weighted capacitive digital-to-analog converter (DAC) is used, which means that one additional bit of resolution costs double the increase of area. Oversampling and noise shaping are methods that allow an increase in resolution without an increase of area. In this paper we present the new SAR ADC architectures with a noise shaping. A first-order noise transfer function (NTF) with zero located nearly at one can be achieved. We propose two modifications of the architecture: with zero-only NTF and with the NTF with additional pole. The additional pole theoretically increases the efficiency of noise shaping to further 3 dB. The architectures were applied to the design of SAR ADCs in a 65 nm complementary metal-oxide semiconductor (CMOS) with OSR equal to 10. A 6-bit capacitive DAC was used. The proposed  architectures  provide nearly 4 additional bits in ENOB. The equalent input bandwitdth is equal to 200 kHz with the sampling rate equal to 4 MS/s

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Fully-passive switched-capacitor techniques for high performance SAR ADC design

In recent years, SAR ADC becomes more and more popular in various low-power applications such as wireless sensors and low energy radios due to its circuit simplicity, high power efficiency, and scaling compatibility. However, its speed is limited by its successive approximation procedures and its power efficiency greatly reduces with the ADC resolution going beyond 10 bit. To address these issues, this thesis proposes to embed two techniques: 1) compressive sensing (CS) and 2) noise shaping (NS) to a conventional SAR ADC. The realization of both techniques are based on fully-passive switched-capacitor techniques. CS is a recently emerging sampling paradigm, stating that the sparsity of a signal can be exploited to reduce the ADC sampling rate below the Nyquist rate. Different from conventional CS frameworks which require dedicated analog CS encoders, this thesis proposes a fully-passive CS-SAR ADC architecture which only requires minor modification to a conventional SAR ADC. Two chips are fabricated in a 0.13 µm process to prove the concept. One chip is a single-channel CS-SAR ADC which can reduce the ADC conversion rate by 4 times, thus reducing the ADC power by 4 times. In many wireless sensing applications, multiple ADCs are commonly required to sense multi-channel signals such as multi-lead ECG sensing and parallel neural recording. Therefore, the other chip is a multi-channel CS-SAR ADC which can simultaneously convert 4-channel signals with a sampling rate of one channel’s Nyquist rate. At 0.8 V and 1 MS/s, both chips achieve an effective Walden FoM of around 5 fJ/conversion-step. This thesis also proposes a novel NS SAR ADC architecture that is simple, robust and low power for high-resolution applications. Compared to conventional ∆Σ ADCs, it replaces the power-hungry active integrator with a passive integrator which only requires one switch and two capacitors. Compared to previous 1st-order NS SAR ADC works, it achieves the best NS performance and can be easily extended to 2nd-order. A 1st-order 10-bit NS SAR ADC is fabricated in a 0.13 µm process. Through NS, SNDR increases by 6 dB with OSR doubled, achieving a 12- bit ENOB at OSR = 8. An improved version of a 2nd-order 9-bit NS SAR ADC is designed and simulated in a 40 nm process. The SNDR increases by 10 dB with OSR doubled, achieving a 14-bit ENOB at OSR = 16. At a bandwidth of 312.5 kHz, the Schreier FoM is 181 dB and the Walden FoM is 12.5 fJ/conversion-step, proving that the proposed NS SAR ADC architecture can achieve high resolution and high power efficiency simultaneously.Electrical and Computer Engineerin

Ultra-low Power Circuits and Architectures for Neuromorphic Computing Accelerators with Emerging TFETs and ReRAMs

Neuromorphic computing using post-CMOS technologies is gaining increasing popularity due to its promising potential to resolve the power constraints in Von-Neumann machine and its similarity to the operation of the real human brain. To design the ultra-low voltage and ultra-low power analog-to-digital converters (ADCs) for the neuromorphic computing systems, we explore advantages of tunnel field effect transistor (TFET) analog-to-digital converters (ADCs) on energy efficiency and temperature stability. A fully-differential SAR ADC is designed using 20 nm TFET technology with doubled input swing and controlled comparator input common-mode voltage. To further increase the resolution of the ADC, we design an energy efficient 12-bit noise shaping (NS) successive-approximation register (SAR) ADC. The 2nd-order noise shaping architecture with multiple feed-forward paths is adopted and analyzed to optimize system design parameters. By utilizing tunnel field effect transistors (TFETs), the Delta-Sigma SAR is realized under an ultra-low supply voltage VDD with high energy efficiency. The stochastic neuron is a key for event-based probabilistic neural networks. We propose a stochastic neuron using a metal-oxide resistive random-access memory (ReRAM). The ReRAM\u27s conducting filament with built-in stochasticity is used to mimic the neuron\u27s membrane capacitor, which temporally integrates input spikes. A capacitor-less neuron circuit is designed, laid out, and simulated. The output spiking train of the neuron obeys the Poisson distribution. Based on the ReRAM based neuron, we propose a scalable and reconfigurable architecture that exploits the ReRAM-based neurons for deep Spiking Neural Networks (SNNs). In prior publications, neurons were implemented using dedicated analog or digital circuits that are not area and energy efficient. In our work, for the first time, we address the scaling and power bottlenecks of neuromorphic architecture by utilizing a single one-transistor-one-ReRAM (1T1R) cell to emulate the neuron. We show that the ReRAM-based neurons can be integrated within the synaptic crossbar to build extremely dense Process Element (PE)–spiking neural network in memory array–with high throughput. We provide microarchitecture and circuit designs to enable the deep spiking neural network computing in memory with an insignificant area overhead

Design Techniques for High-Performance SAR A/D Converters

The design of electronics needs to account for the non-ideal characteristics of the device technologies used to realize practical circuits. This is particularly important in mixed analog-digital design since the best device technologies are very different for digital compared to analog circuits. One solution for this problem is to use a calibration correction approach to remove the errors introduced by devices, but this adds complexity and power dissipation, as well as reducing operation speed, and so must be optimised. This thesis addresses such an approach to improve the performance of certain types of analog-to-digital converter (ADC) used in advanced telecommunications, where speed, accuracy and power dissipation currently limit applications. The thesis specifically focuses on the design of compensation circuits for use in successive approximation register (SAR) ADCs. ADCs are crucial building blocks in communication systems, in general, and for mobile networks, in particular. The recently launched fifth generation of mobile networks (5G) has required new ADC circuit techniques to meet the higher speed and lower power dissipation requirements for 5G technology. The SAR has become one of the most favoured architectures for designing high-performance ADCs, but the successive nature of the circuit operation makes it difficult to reach ∼GS/s sampling rates at reasonable power consumption. Here, two calibration techniques for high-performance SAR ADCs are presented. The first uses an on-chip stochastic-based mismatch calibration technique that is able to accurately compute and compensate for the mismatch of a capacitive DAC in a SAR ADC. The stochastic nature of the proposed calibration method enables determination of the mismatch of the CAPDAC with a resolution much better than that of the DAC. This allows the unit capacitor to scale down to as low as 280aF for a 9-bit DAC. Since the CAP-DAC causes a large part of the overall dynamic power consumption and directly determines both the sizes of the driving and sampling switches and the size of the input capacitive load of the ADC and the kT/C noise power, a small CAP-DAC helps the power efficiency. To validate the proposed calibration idea, a 10-bit asynchronous SAR ADC was fabricated in 28-nm CMOS. Measurement results show that the proposed stochastic calibration improves the ADC’s SFDR and SNDR by 14.9 dB, 11.5 dB, respectively. After calibration, the fabricated SAR ADC achieves an ENOB of 9.14 bit at a sampling rate of 85 MS/s, resulting in a Walden FoM of 10.9 fJ/c-s. The second calibration technique is a timing-skew calibration for a time-interleaved (TI) SAR ADC that calibrates/computes the inter-channel timing and offset mismatch simultaneously. Simulation results show the effectiveness of this calibration method. When used together, the proposed mismatch calibration technique and the timing-skew calibration technique enables a TI SAR ADC to be designed that can achieve a sampling rate of ∼GS/s with 10-bit resolution and a power consumption as low as ∼10mW; specifications that satisfy the requirements of 5G technology