A Sub-kT/q Voltage Reference Operating at 150 mV

We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain-source voltage of each MOSFET to be larger than 4kT/q. The implemented solution consists in two transistors voltage reference with two MOSFETs of the same threshold-type and exploits the dependence of the threshold voltage on transistor size. Measurements performed over a large sample population of 60 chips from two separate batches show a standard deviation of only 0.29 mV. The mean variation of the reference voltage for VDD ranging from 0.15 to 1.8 V is 359.5 μV/V, whereas the mean variation of VREF in the temperature range from 0°C to 120°C is 26.74 μV/°C. The mean power consumption at 25 °C for VDD = 0.15 V is 26.1 pW. The occupied area is 1200 μm2

Subthreshold design of ultra low-power analog modules

Il consumo di potenza rappresenta l’indicatore chiave delle performance di recenti applicazioni portatili, come dispositivi medici impiantabili o tag RFID passivi, allo scopo di aumentare, rispettivamente, i tempi di funzionamento o i range operativi. La riduzione della tensione di alimentazione si è dimostrata l’approccio migliore per ridurre il consumo di potenza dei sistemi digitali integrati. Al fine di tenere il passo con la riduzione delle tensioni di alimentazione, anche le sezioni analogiche dei sistemi mixed signal devono essere in grado di funzionare con livelli di tensione molto bassi. Di conseguenza, sono richieste nuove metodologie di progettazione analogica e configurazioni circuitali innovative in grado di lavorare con tensioni di alimentazioni bassissime, dissipando una potenza estremamente bassa. Il regime di funzionamento sottosoglia consente di ridurre notevolmente le tensioni applicabili ai dispositivi ed si contraddistingue per i livelli di corrente molto bassi, rispetto al ben noto funzionamento in forte inversione. Queste due caratteristiche sono state sfruttate nella realizzazione di moduli analogici di base ultra low voltage, low power. Tre nuove architetture di riferimenti di tensione, che lavorano con tutti i transistor polarizzati in regime sottosoglia, sono stati fabbricati in tecnologia CMOS 0.18 μm. I tre circuiti si basano sullo stesso principio di funzionamento per compensare gli effetti della variazione della temperatura sulla tensione di riferimento generata. Tramite il principio di funzionamento proposto, la tensione di riferimento può essere approssimata con la differenza delle tensioni di soglia, a temperatura ambiente, dei transistor. Misure sperimentali sono state effettuate su set con più di 30 campioni per ogni configurazione circuitale. Una dettagliata analisi statistica ha dimostrato un consumo medio di potenza che va da pochi nano watt a poche decine di nano watt, mentre la minima tensione di alimentazione, raggiunta da una delle tre configurazioni, è di soli 0.45 V. Le tensioni di riferimento generate sono molto precise rispetto alle variazioni della temperatura e della tensione di alimentazione, infatti sono stati ottenuti coefficienti di temperatura e line sensitivity medi a partire rispettivamente da 165 ppm/°C e 0.065 %/V. Inoltre, è stata trattata anche la progettazione di amplificatori ultra low voltage, low power. Sono state illustrate linee guida dettagliate per la progettazione di amplificatori sottosoglia e le stesse sono state applicate per la realizzazione di un amplificatore a due stadi, con compensazione di Miller, funzionante con una tensione di alimentazione di 0.5 V. I risultati sperimentali dell’op amp proposto, fabbricato in tecnologia CMOS 0.18 μm, hanno mostrato un guadagno DC ad anello aperto di 70 dB, un prodotto banda guadagno di 18 kHz ed un consumo di potenza di soli 75 nW. I risultati delle misure sperimentali dimostrano che gli amplificatori operazionali in sottosoglia rappresentano una soluzione molto interessante nella realizzazione di applicazioni efficienti in termini energetici per gli attuali sistemi elettronici portatili. Dal confronto con amplificatori ultra low power, low voltage presenti in letteratura, si evince che la soluzione proposta offre un miglior compromesso tra velocità, potenza dissipata e capacità di carico

A 0.45 V low power high PSRR subthreshold CMOS voltage reference

University of Minnesota M.S. thesis. October 2017. Major: Electrical/Computer Engineering. Advisor: Ted Higman. 1 computer file (PDF); viii, 51 pages.Voltage references are broadly used in analog and digital systems to generate a DC voltage independent of process, supply voltage and temperature (PVT) variations. Conventional band gap references (BGR) add the forward bias voltage across a PN junction with a voltage that is proportional to absolute temperature to produce an output that is insensitive to changes in temperature. BGRs generate a nearly temperature independent reference, of about 1.25 V, and therefore they require a higher supply voltage, which might not meet the low voltage constraints for low-power applications such as passive RFID’s, wearable and implantable medical devices. Also, BGRs use resistors that need more area on silicon. One possible solution to meet the low power requirement is to operate MOSFETs in subthreshold region. Most often, forward biased PN-junctions of BGRs are substituted with MOSFETs biased in the subthreshold region and achieves a supply voltage down to 0.6 V.\par This paper presents a sub-1V voltage reference circuit that has only MOS transistors, all working in subthreshold region with a supply voltage down to 0.45 V and a supply current of 1nA at room temperature for ultra-low power applications. The circuit is designed and simulated in 0.13um technology

Design And Simulation Of Cmos-Based Bandgap Reference Voltage With Compensation Circuit Using 0.18 Μm Process Technology

Voltage reference circuit is important in electronic world nowadays. A CMOS based bandgap reference (BGR) circuit is preferred due to its size is smaller and consume less power. However, the drawback is the reference voltage variation of CMOS based BGR circuit is big in wide range of temperature, thus the temperature coefficient of it is high. Hence, an improved version of piecewise curvature-corrected Bandgap voltage reference circuit which has low voltage variation in wide range of temperature is introduced in this project to overcome the problem mentioned above. The BGR circuit is designed using CMOS compatible process in 0.18μm CMOS process technology and simulated by using Cadence tool. The proposed piecewise curvature-corrected BGR operate properly with output voltage of 558.6 mV to 558.3 mV by varying the voltage supply 1.4 V to 3.3 V at 27°C and the line regulation is 0.016% . Besides that, the best temperature coefficient obtained is 9.2 ppm/°C in the temperature range of -25°C to 150°C at 1.8 V. The PSSR of the proposed circuit is -69.91 dB at frequency less 10 kHz. The layout design of the proposed circuit is done by using Silterra 0.18 μm standard CMOS process and total die area is 0.0175 mm2 and temperature coefficient obtained in post layout simulation is 11.66ppm/°C. In short, it is found that the proposed design of BGR circuit is able to achieve high temperature range and relatively low voltage variation

Variability-aware design of CMOS nanopower reference circuits

Questo lavoro è inserito nell'ambito della progettazione di circuiti microelettronici analogici con l'uso di tecnologie scalate, per le quali ha sempre maggiore importanza il problema della sensibilità delle grandezze alle variazioni di processo. Viene affrontata la progettazione di generatori di quantità di riferimento molto precisi, basati sull’uso di dispositivi che sono disponibili anche in tecnologie CMOS standard e che sono “intrinsecamente” più robusti rispetto alle variazioni di processo. Questo ha permesso di ottenere una bassa sensibilità al processo insieme ad un consumo di potenza estremamente ridotto, con il principale svantaggio di una elevata occupazione di area. Tutti i risultati sono stati ottenuti in una tecnologia 0.18μm CMOS. In particolare, abbiamo progettato un riferimento di tensione, ottenendo una deviazione standard relativa della tensione di riferimento dello 0.18% e un consumo di potenza inferiore a 70 nW, sulla base di misure su un set di 20 campioni di un singolo batch. Sono anche disponibili risultati relativi alla variabilità inter batch, che mostrano una deviazione standard relativa cumulativa della tensione di riferimento dello 0.35%. Abbiamo quindi progettato un riferimento di corrente, ottenendo anche in questo caso una sensibilità al processo della corrente di riferimento dell’1.4% con un consumo di potenza inferiore a 300 nW (questi sono risultati sperimentali ottenuti dalle misure su 20 campioni di un singolo batch). I riferimenti di tensione e di corrente proposti sono stati quindi utilizzati per la progettazione di un oscillatore a rilassamento a bassa frequenza, che unisce una ridotta sensibilità al processo, inferiore al 2%, con un basso consumo di potenza, circa 300 nW, ottenuto sulla base di simulazioni circuitali. Infine, nella progettazione dei blocchi sopra menzionati, abbiamo applicato un metodo per la determinazione della stabilità dei punti di riposo, basato sull’uso dei CAD standard utilizzati per la progettazione microelettronica. Questo approccio ci ha permesso di determinare la stabilità dei punti di riposo desiderati, e ci ha anche permesso di stabilire che i circuiti di start up spesso non sono necessari

Nanopower CMOS transponders for UHF and microwave RFID systems

At first, we present an analysis and a discussion of the design options and tradeoffs for a passive microwave transponder. We derive a set of criteria for the optimization of the voltage multiplier, the power matching network and the backscatter modulator in order to optimize the operating range. In order to match the strictly power requirements, the communication protocol between transponder and reader has been chosen in a convenient way, in order to make the architecture of the passive transponder very simple and then ultra-low-power. From the circuital point of view, the digital section has been implemented in subthreshold CMOS logic with very low supply voltage and clock frequency. We present different solutions to supply power to the transponder, in order to keep the power consumption in the deep sub-µW regime and to drastically reduce the huge sensitivity of the subthreshold logic to temperature and process variations. Moreover, a low-voltage and low-power EEPROM in a standard CMOS process has been implemented. Finally, we have presented the implementation of the entire passive transponder, operating in the UHF or microwave frequency range

A low-power native NMOS-based bandgap reference operating from −55°C to 125°C with Li-Ion battery compatibility

Summary The paper describes the implementation of a bandgap reference based on native-MOSFET transistors for low-power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military-aerospace applications, and for direct Li-Ion battery attach. Moreover, the circuit can operate without any dedicated start-up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55-nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample-to-sample variation within 57 mV, with a current consumption of 420 nA at 27°C

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion

Integrated Circuits for Programming Flash Memories in Portable Applications

Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as high-voltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration