Longitudinal and transversal piezoresistive response of granular metals

In this paper, we study the piezoresistive response and its anisotropy for a bond percolation model of granular metals. Both effective medium results and numerical Monte Carlo calculations of finite simple cubic networks show that the piezoresistive anisotropy is a strongly dependent function of bond probability p and of bond conductance distribution width \Delta g. We find that piezoresistive anisotropy is strongly suppressed as p is reduced and/or \Delta g is enhanced and that it vanishes at the percolation thresold p=p_c. We argue that a measurement of the piezoresistive anisotropy could be a sensitive tool to estimate critical metallic concentrations in real granular metals.Comment: 14 pages, 7 eps figure

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Comment: 4 pages, 5 figure

Anisotropic random resistor networks: a model for piezoresistive response of thick-film resistors

A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of transport properties in thick-film resistors a percolative resistor network, with conducting elements governed by tunneling. For both oriented and randomly oriented networks, we show that the piezoresistive response to an applied strain is model dependent when the system is far away from the percolation thresold, while in the critical region it acquires universal properties. In particular close to the metal-insulator transition, the piezoresistive anisotropy show a power law behavior. Within this region, there exists a simple and universal relation between the conductance and the piezoresistive anisotropy, which could be experimentally tested by common cantilever bar measurements of thick-film resistors.Comment: 7 pages, 2 eps figure

Fast on-wafer electrical, mechanical, and electromechanical characterization of piezoresistive cantilever force sensors

Validation of a technological process requires an intensive characterization of the performance of the resulting devices, circuits, or systems. The technology for the fabrication of micro and nanoelectromechanical systems (MEMS and NEMS) is evolving rapidly, with new kind of device concepts for applications like sensing or harvesting are being proposed and demonstrated. However, the characterization tools and methods for these new devices are still not fully developed. Here, we present an on-wafer, highly precise, and rapid characterization method to measure the mechanical, electrical, and electromechanical properties of piezoresistive cantilevers. The setup is based on a combination of probe-card and atomic force microscopy technology, it allows accessing many devices across a wafer and it can be applied to a broad range of MEMS and NEMS. Using this setup we have characterized the performance of multiple submicron thick piezoresistive cantilever force sensors. For the best design we have obtained a force sensitivity ℜ_F = 158μV/nN, a noise of 5.8 μV (1 Hz–1 kHz) and a minimum detectable force of 37 pN with a relative standard deviation of σ_r ≈ 8%. This small value of σr, together with a high fabrication yield >95%, validates our fabrication technology. These devices are intended to be used as bio-molecular detectors for the measurement of intermolecular forces between ligand and receptor molecule pairs

Piezoresistive effect of p-type single crystalline 3C-SiC on (111) plane

This paper presents for the first time the effect of strain on the electrical conductivity of p-type single crystalline 3C-SiC grown on a Si (111) substrate. 3C-SiC thin film was epitaxially formed on a Si (111) substrate using the low pressure chemical vapor deposition process. The piezoresistive effect of the grown film was investigated using the bending beam method. The average longitudinal gauge factor of the p-type single crystalline 3C-SiC was found to be around 11 and isotropic in the (111) plane. This gauge factor is 3 times smaller than that in a p-type 3C-SiC (100) plane. This reduction of the gauge factor was attributed to the high density of defects in the grown 3C-SiC (111) film. Nevertheless, the gauge factor of the p-type 3C-SiC (111) film is still approximately 5 times higher than that in most metals, indicating its potential for niche mechanical sensing applications

Simultaneous muscle force and displacement transducer

A myocardial transducer for simultaneously measuring force and displacement within a very small area of myocardium is disclosed. The transducer comprised of an elongated body forked at one end to form an inverted Y shaped beam with each branch of the beam constituting a low compliant tine for penetrating the myocardium to a predetermined depth. Bonded to one of the low compliance tines is a small piezoresistive element for converting a force acting on the beam into an electrical signal. A third high compliant tine of the transducer, which measures displacement of the myocardium in a direction in line with the two low compliant tines, is of a length that just pierces the surface membrane. A small piezoresistive element is bonded to the third tine at its upper end where its bending is greatest. Displacement of the myocardium causes a deformation in curvature of the third tine, and the second small piezoresistive element bonded to the surface of its curved end converts its deformation into an electrical signal

Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nano-electromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nano-electromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area.Comment: 20 pages, 3 figure