Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated,\ud yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+\ud concentrations were deduced

Energy consumption by reversible circuits in the 130 nm and 65 nm nodes

We show that both 130 nm and 65 nm technologies are suitable for reversible computation