Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Abstract

Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated,\ud yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+\ud concentrations were deduced