Fixed Charge Ensembles and Parity Breaking Terms

Recently derived results for the exact induced parity-breaking term in 2+1 dimensions at finite temperature are shown to be relevant to the determination of the free energy for fixed-charge ensembles. The partition functions for fixed total charge corresponding to massive fermions in the presence of Abelian and non-Abelian magnetic fields are discussed. We show that the presence of the induced Chern-Simons term manifests itself in that the free energy depends strongly on the relation between the external magnetic flux and the value of the fixed charge.Comment: 10 pages, Revte

A HEURISTIC FIXED-CHARGE QUADRATIC ALGORITHM

Research Methods/ Statistical Methods,

On the Current Carried by `Neutral' Quasiparticles

The current should be proportional to the momentum in a Galilean-invariant system of particles of fixed charge-to-mass ratio, such as an electron liquid in jellium. However, strongly-interacting electron systems can have phases characterized by broken symmetry or fractionalization. Such phases can have neutral excitations which can presumably carry momentum but not current. In this paper, we show that there is no contradiction: `neutral' excitations {\em do} carry current in a Galilean-invariant system of particles of fixed charge-to-mass ratio. This is explicitly demonstrated in the context of spin waves, the Bogoliubov-de Gennes quasiparticles of a superconductor, the one-dimensional electron gas, and spin-charge separated systems in 2+1 dimensions. We discuss the implications for more realistic systems, which are not Galilean-invariant

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

We report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). (C) 2010 American Institute of Physics. (doi:10.1063/1.3399776

Strongly Polynomial Primal-Dual Algorithms for Concave Cost Combinatorial Optimization Problems

We introduce an algorithm design technique for a class of combinatorial optimization problems with concave costs. This technique yields a strongly polynomial primal-dual algorithm for a concave cost problem whenever such an algorithm exists for the fixed-charge counterpart of the problem. For many practical concave cost problems, the fixed-charge counterpart is a well-studied combinatorial optimization problem. Our technique preserves constant factor approximation ratios, as well as ratios that depend only on certain problem parameters, and exact algorithms yield exact algorithms. Using our technique, we obtain a new 1.61-approximation algorithm for the concave cost facility location problem. For inventory problems, we obtain a new exact algorithm for the economic lot-sizing problem with general concave ordering costs, and a 4-approximation algorithm for the joint replenishment problem with general concave individual ordering costs

Depletion-mode Quantum Dots in Intrinsic Silicon

We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.Comment: Accepted to Applied Physics Letters. 5 pages, 3 figure