Nonlinear Hall effect as a signature of electronic phase separation in the semimetallic ferromagnet EuB6

This work reports a study of the nonlinear Hall Effect (HE) in the semimetallic ferromagnet EuB6. A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a wide temperature range. The observation is interpreted as the point of percolation for entities of a more conducting and magnetically ordered phase in a less ordered background. With an increasing applied magnetic field, the conducting regions either increase in number or expand beyond the percolation limit, hence increasing the global conductivity and effective carrier density. An empirical two-component model expression provides excellent scaling and a quantitative fit to the HE data and may be applicable to other correlated electron systems.Comment: 15 Pages, 4 Figures. Accepted for publication in Phys. Rev. Let

Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot

We theoretically investigate the orbital effects of an in-plane magnetic field on the spectrum of a quantum dot embedded in a two-dimensional electron gas (2DEG). We derive an effective two-dimensional Hamiltonian where these effects enter in proportion to the flux penetrating the 2DEG. We quantify the latter in detail for harmonic, triangular, and square potential of the heterostructure. We show how the orbital effects allow one to extract a wealth of information, for example, on the heterostructure interface, the quantum dot size and orientation, and the spin-orbit fields. We illustrate the formalism by extracting this information from recent measured data [L.~C.~Camenzind, et al., arXiv:1804.00162; Nat. Commun. 9, 3454 (2018)].Comment: 14 pages, 9 figures; minor changes resulting from refereeing and proof

Probing Hundreds of Individual Quantum Defects in Polycrystalline and Amorphous Alumina

Quantum two-level systems (TLSs) are present in the materials of qubits and are considered defects because they limit qubit coherence. For superconducting qubits, the quintessential Josephson junction barrier is made of amorphous alumina, which hosts TLSs. However, TLSs are not understood generally -- either structurally or in atomic composition. In this study, we greatly extend the quantitative data available on TLSs by reporting on the physical dipole moment in two alumina types: polycrystalline γ−Al$_2$O$_3$ and amorphous a−AlO$_x$. To obtain the dipole moments p$_z$, rather from the less-structural coupling parameter g, we tune individual TLSs with an external electric field to extract the p$_z$ of the TLSs in a cavity QED system. We find a clear difference in the dipole moment distribution from the film types, indicating a difference in TLS structures. A large sample of approximately 400 individual TLSs are analyzed from the polycrystalline film type. Their dipoles along the growth direction p$_z$ have a mean value of 2.6±0.3 Debye (D) and standard deviation σ = 1.6±0.2 D . The material distribution fits well to a single Gaussian function. Approximately 200 individual TLSs are analyzed from amorphous films. Both the mean p$_z$ =4.6±0.5 D and σ =2.5±0.3 D are larger. Amorphous alumina also has some very large p$_z$, > 8.6 D, in contrast to polycrystalline which has none of this moment. These large moments agree only with oxygen-based TLS models. Based on data and the candidate models (delocalized O and hydrogen-based TLSs), we find polycrystalline alumina has smaller ratio of O-based to H-based TLS than amorphous alumina

Signatures of electronic phase separation in the Hall effect of anisotropically strained La0.67Ca0.33MnO3 films

Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by controlling the thermal annealing time. An antiferromagnetic insulating (AFI) state, possibly associated with charge ordering, emerges upon thermal annealing. The Hall effect in these materials exhibits features that are indicative of a percolative phase transition and correlate closely with the emergence of the AFI state. In the paramagnetic phase, the Hall resistivity takes on two slopes in all samples: a decreasing negative slope with increasing temperature at low fields, which is attributed to the carrier hopping motion, and an almost temperature independent positive slope at high fields due to diffusive transport of holes. Significantly, the crossover fields of the Hall resistivity slope at different temperatures correspond to the same magnetization, which is interpreted as the critical point of a magnetic field-driven percolative phase transition. At lower temperatures near the zero-field metal-insulator transition, pronounced enhancement of the Hall coefficient with the development of the AFI state is observed. The enhancement peaks near the magnetic field-driven percolation; its magnitude correlates with the strength of the AFI state and is suppressed with the melting of the AFI state by an in-plane magnetic field. The observations resemble many features of the enhancement of the Hall coefficient in granular metal films near the composition-driven percolation

Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields

We show that in-plane-magnetic-field assisted spectroscopy allows extraction of the in-plane orientation and full 3D shape of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with sub-nm precision. The method is based on measuring orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. As a result, we deduce the microscopic quantum dot confinement potential landscape, and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement.Comment: 4 pages, 3 color figures, including supplementary on arXi

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Understanding and control of the spin relaxation time T-1 is among the key challenges for spinbased qubits. A larger T-1 is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high inplane magnetic fields B, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence T-1 alpha B-5 and pronounced B-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to T-1 alpha B-3. Here, we establish these predictions experimentally, by measuring T-1 over an unprecedented range of magnetic fields-made possible by lower temperature-and report a maximum T-1 = 57 +/- 15 s at the lowest fields, setting a record electron spin lifetime in a nanostructure

Experimentally revealing anomalously large dipoles in the dielectric of a quantum circuit

Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields

Machine learning enables completely automatic tuning of a quantum device faster than human experts

Variability is a problem for the scalability of semiconductor quantum devices. The parameter space is large, and the operating range is small. Our statistical tuning algorithm searches for specific electron transport features in gate-defined quantum dot devices with a gate voltage space of up to eight dimensions. Starting from the full range of each gate voltage, our machine learning algorithm can tune each device to optimal performance in a median time of under 70 minutes. This performance surpassed our best human benchmark (although both human and machine performance can be improved). The algorithm is approximately 180 times faster than an automated random search of the parameter space, and is suitable for different material systems and device architectures. Our results yield a quantitative measurement of device variability, from one device to another and after thermal cycling. Our machine learning algorithm can be extended to higher dimensions and other technologies