1,528 research outputs found
Effect of an InP/InGaAs Interface on Spin-orbit Interaction in InAlAs/InGaAs Heterostructures
We report the effect of the insertion of an InP/InGaAs
Interface on Rashba spin-orbit interaction in
InAlAs/InGaAs quantum wells. A small spin
split-off energy in InP produces a very intriguing band lineup in the valence
bands in this system. With or without this InP layer above the
InGaAs well, the overall values of the spin-orbit coupling
constant turned out to be enhanced or diminished for samples with the
front- or back-doping position, respectively. These experimental results, using
weak antilocalization analysis, are compared with the results of the
theory. The actual conditions of the interfaces and
materials should account for the quantitative difference in magnitude between
the measurements and calculations.Comment: Submitted for publication; v2 to adjust Eq.6; v3 to correct the
figure file name; v4, a revised version accepted for publication in Phys.
Rev.
Probing onset of strong localization and electron-electron interactions with the presence of direct insulator-quantum Hall transition
We have performed low-temperature transport measurements on a disordered
two-dimensional electron system (2DES). Features of the strong localization
leading to the quantum Hall effect are observed after the 2DES undergoes a
direct insulator-quantum Hall transition with increasing the perpendicular
magnetic field. However, such a transition does not correspond to the onset of
strong localization. The temperature dependences of the Hall resistivity and
Hall conductivity reveal the importance of the electron-electron interaction
effects to the observed transition in our study.Comment: 9 pages, 4 figure
On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers.
A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.RIGHTS : This article is licensed under the BioMed Central licence at http://www.biomedcentral.com/about/license which is similar to the 'Creative Commons Attribution Licence'. In brief you may : copy, distribute, and display the work; make derivative works; or make commercial use of the work - under the following conditions: the original author must be given credit; for any reuse or distribution, it must be made clear to others what the license terms of this work are
An SIRS Epidemic Model Incorporating Media Coverage with Time Delay
An SIRS epidemic model incorporating media coverage with time delay is proposed.
The positivity and boundedness are studied firstly. The locally asymptotical stability of the disease-free equilibrium and endemic equilibrium is studied in succession. And then, the conditions on which periodic orbits bifurcate are given. Furthermore, we show that the local Hopf bifurcation implies the global Hopf bifurcation after the second critical value of the delay. The obtained results show that the time delay in media coverage can not affect the stability of the disease-free equilibrium when the basic reproduction number R0<1. However, when R0>1, the stability of the endemic equilibrium will be affected by the time delay; there will be a family of periodic orbits bifurcating from the endemic equilibrium when the time delay increases through a critical value. Finally, some examples for numerical simulations are also included
Effect of an InP/In0.53Ga0.47As interface on spin-orbit interaction in In0.52Al0.48As/In0.53Ga0.47As heterostructures
Spatio-Temporal Characteristics of Global Warming in the Tibetan Plateau during the Last 50 Years Based on a Generalised Temperature Zone - Elevation Model
Temperature is one of the primary factors influencing the climate and ecosystem, and examining its change and fluctuation could elucidate the formation of novel climate patterns and trends. In this study, we constructed a generalised temperature zone elevation model (GTEM) to assess the trends of climate change and temporal-spatial differences in the Tibetan Plateau (TP) using the annual and monthly mean temperatures from 1961-2010 at 144 meteorological stations in and near the TP. The results showed the following: (1) The TP has undergone robust warming over the study period, and the warming rate was 0.318°C/decade. The warming has accelerated during recent decades, especially in the last 20 years, and the warming has been most significant in the winter months, followed by the spring, autumn and summer seasons. (2) Spatially, the zones that became significantly smaller were the temperature zones of -6°C and -4°C, and these have decreased 499.44 and 454.26 thousand sq km from 1961 to 2010 at average rates of 25.1% and 11.7%, respectively, over every 5-year interval. These quickly shrinking zones were located in the northwestern and central TP. (3) The elevation dependency of climate warming existed in the TP during 1961-2010, but this tendency has gradually been weakening due to more rapid warming at lower elevations than in the middle and upper elevations of the TP during 1991-2010. The higher regions and some low altitude valleys of the TP were the most significantly warming regions under the same categorizing criteria. Experimental evidence shows that the GTEM is an effective method to analyse climate changes in high altitude mountainous regions
Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure
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