Nonlinear Hall effect as a signature of electronic phase separation in the semimetallic ferromagnet EuB6

This work reports a study of the nonlinear Hall Effect (HE) in the semimetallic ferromagnet EuB6. A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a wide temperature range. The observation is interpreted as the point of percolation for entities of a more conducting and magnetically ordered phase in a less ordered background. With an increasing applied magnetic field, the conducting regions either increase in number or expand beyond the percolation limit, hence increasing the global conductivity and effective carrier density. An empirical two-component model expression provides excellent scaling and a quantitative fit to the HE data and may be applicable to other correlated electron systems.Comment: 15 Pages, 4 Figures. Accepted for publication in Phys. Rev. Let

Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.Comment: 5 pages, 4 fig

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS$_{4}$. Electrical resistivity increased with decreasing temperature according to the form proportional to $\textrm{exp}(T_{0}/T)^{1/2}$, derived from variable range hopping with strong electron-electron interaction. Resistivity under magnetic fields was expressed by the same form with the characteristic temperature T0 decreasing with increasing magnetic field. Magnetoresistance ratio $\rho (T,0)/\rho(T,H)$ is 1.5 at 100 K for H=90 kOe and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. Possible mechanism of the large magnetoresistance is discussed.Comment: 9 pages, 5 figures, to be published in Solid State Commu

Luminous X-ray AGN in Clusters of Galaxies

We present a study of X-ray AGN overdensities in 16 Abell clusters, within the redshift range 0.073<z<0.279, in order to investigate the effect of the hot inter-cluster environment on the triggering of the AGN phenomenon. The X-ray AGN overdensities, with respect to the field expectations, were estimated for sources with L_x>= 10^{42} erg s^{-1} (at the redshift of the clusters) and within an area of 1 h^{-1}_{72} Mpc radius (excluding the core). To investigate the presence or not of a true enhancement of luminous X-ray AGN in the cluster area, we also derived the corresponding optical galaxy overdensities, using a suitable range of $r$-band magnitudes. We always find the latter to be significantly higher (and only in two cases roughly equal) with respect to the corresponding X-ray overdensities. Over the whole cluster sample, the mean X-ray point-source overdensity is a factor of ~4 less than that corresponding to bright optical galaxies, a difference which is significant at a >0.995 level, as indicated by an appropriate t-student test. We conclude that the triggering of luminous X-ray AGN in rich clusters is strongly suppressed. Furthermore, searching for optical SDSS counterparts of all the X-ray sources, associated with our clusters, we found that about half appear to be background QSOs, while others are background and foreground AGN or stars. The true overdensity of X-ray point sources, associated to the clusters, is therefore even smaller than what our statistical approach revealed.Comment: accepted for publication in ApJ Letter

Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO2−δ_{2-\delta}

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.Comment: RevTeX4, Four pages, Four Figures in ^.eps forma

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source. Nominally single-phase, epitaxial films were achieved with Mn content as high as x=0.14 using growth temperatures Tg>475 C. For lower growth temperatures and higher Mn concentrations, nanometer scale MnAs precipitates were detected within the In1-xMnxAs matrix. Magnetic properties of the films were investigated using a superconducting quantum interference device (SQUID) magnetometer. Room-temperature ferromagnetic order was observed in a sample with x=0.1. Magnetization measurements indicated a Curie temperature of 333 K and a room-temperature saturation magnetization of 49 emu/cm^3. The remnant magnetization and the coercive field were small, with values of 10 emu/cm^3 and 400 Oe, respectively. A mechanism for this high-temperature ferromagnetism is discussed in light of the recent theory based on the formation of small clusters of a few magnetic atoms.Comment: 5 pages, 5 figures, accepted for publication in JVST

Mechanistic and genetic basis of single-strand templated repair at Cas12a-induced DNA breaks in Chlamydomonas reinhardtii

Single-stranded oligodeoxynucleotides (ssODNs) are widely used as DNA repair templates inCRISPR/Cas precision genome editing. However, the underlying mechanisms of single-strandtemplated DNA repair (SSTR) are inadequately understood, constraining rational improve-ments to precision editing. Here we study SSTR at CRISPR/Cas12a-induced DNA double-strand breaks (DSBs) in the eukaryotic model green microalgaChlamydomonas reinhardtii.Wedemonstrate that ssODNs physically incorporate into the genome during SSTR at Cas12a-induced DSBs. This process is genetically independent of the Rad51-dependent homologousrecombination and Fanconi anemia pathways, is strongly antagonized by non-homologousend-joining, and is mediated almost entirely by the alternative end-joining enzyme poly-meraseθ. Thesefindings suggest differences in SSTR betweenC. reinhardtiiand animals. Ourwork illustrates the promising potentially ofC. reinhardtiias a model organism for studyingnuclear DNA repair