Boys’ boarding school management: understanding the choice criteria of parents

The South African secondary boarding school sector has become more competitive as schools attempt to attract and retain pupils. Management of such schools must not only address the educational and boarding needs of pupils, but also apply appropriate management and marketing principles to compete effectively with boarding schools throughout the country and beyond. Customers base their choices of products and services on their perceptions of various offerings available, evaluated according to selection criteria they deem to be important. Marketing theory uses the term “positioning” to describe the process of constructing the place that a product occupies in the customer’s mind relative to competing products. For schools in this sector to position themselves appropriately, they first need to determine the criteria parents use to evaluate one school against another. This study set out to determine these criteria. A sample of 169 parents and old boys, chosen using the database of a particular boys’ boarding school in KwaZulu-Natal (KZN), South Africa, were sent questionnaires. Quantitative analysis was conducted to determine the most important criteria. The top two criteria were found to be a safe environment and competent staff.Keywords: boarding school choice, boys’ secondary schools, choice criteria, competition amongst schools, perceptual mapping, positioning, school management, school selectio

Frequency dependence of electrical conductivity and dielectric constant of UO2

The dielectric constant and electrical conductivity of single crystal and polycrystalline UO2 are found to be frequency dependent. The dielectric constant measured at low frequencies is anomalously large at room temperature but decreases to a limiting value (~25) below about 130 K. A knee observed in the temperature dependence of the conductivity of polycrystalline UO2 corresponds to a process having an activation energy of 0.15 eV

The importance of choice attributes and the positions of the airlines within the South African domestic passenger airline industry as perceived by passengers at Durban International Airport

This exploratory study sought to determine what customers perceive to be the most important attributes when choosing their passenger airline within the South African domestic airline industry. In line with positioning research protocol, respondents then evaluated the performance of each airline on those attributes. The attributes that respondents perceived to be important in their airline selection and that differentiated amongst competitors within the domestic passenger airline industry were safety, punctual/reliable flightsand low price. However, respondents indicated that they were only prepared to sacrifice Voyager Miles, and legroom and onboard space for lower prices. The positions of the traditional as well as low-cost airlines operating in the South African domestic market are plotted on positioning maps using the determining dimensions as axes.Key words: positioning, South African airline industry, determinant attribute

Interaction Between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction

Modelling of the interaction between Hot Carrier Aging (HCA) and Positive Bias Temperature Instability (PBTI) has been considered as one of the main challenges in nanoscale CMOS circuit design. Previous works were mainly based on separate HCA and PBTI instead of Interacted HCA-PBTI Degradation (IHPD). The key advance of this work is to develop a methodology that enables accurate modelling of IHPD through understanding the charging/discharging and generation kinetics of different types of defects during the interaction between HCA and PBTI. It is found that degradation during alternating HCA and PBTI stress cannot be modelled by independent HCI/PBTI. Different stress sequence, i.e. HCA-PBTI-HCA and PBTI-HCA-PBTI, lead to completely different degradation kinetics. Based on the Cyclic Anti-neutralization Model (CAM), for the first time, IHPD has been accurately modelled for both short and long channel devices. Complex degradation mechanisms and kinetics can be well explained by our model. Our results show that device lifetime can be underestimated by one decade without considering interaction

The political identities of neighbourhood planning in England

The rise of neighbourhood planning has been characterised as another step in a remorseless de-politicisation of the public sphere. A policy initiated by the Coalition Government in England to create the conditions for local communities to support housing growth, neighbourhood planning appears to evidence a continuing retreat from political debate and contestation. Clear boundaries are established for the holistic integration of participatory democracy into the strategic plan-making of the local authority. These boundaries seek to take politics out of development decisions and exclude all issues of contention from discussion. They achieve this goal at the cost of arming participatory democracy with a collective identity around which new antagonisms may develop. Drawing on the post-political theories of Chantal Mouffe this paper identifies the return of antagonism and conflict to participation in spatial planning. Key to its argument is the concept of the boundary or frontier that in Mouffe’s theoretical framework institutionalises conflict between political entities. Drawing on primary research with neighbourhood development plans in England the paper explores how boundary conditions and boundary designations generate antagonism and necessitate political action. The paper charts the development of the collective identities that result from these boundary lines and argues for the potential for neighbourhood planning to restore political conflict to the politics of housing development

Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging

The access transistor of SRAM can suffer both Positive Bias Temperature Instability (PBTI) and Hot Carrier Aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4eV below conduction band (Ec) of high-k (HK) dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs’ peak is 0.2eV deeper than that of pre-existing ETs. In contrast with the power law kinetics for charging the pre-existing ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modelling HCA. A cyclic and anti-neutralization ETs model (CAM) is proposed to explain PBTI and HCA degradation, which consists of pre-existing cyclic electron traps (PCET), generated cyclic electron traps (GCET), and anti-neutralization electron traps (ANET)

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

To predict the negative bias temperature instability (NBTI) towards the end of pMOSFETs’ 10 years lifetime, power-law based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents, n. The n reported by early work spreads in a wide range and varies with measurement conditions, which can lead to unacceptable errors when extrapolated to 10 years. The objective of this work is to find how to make the n extraction independent of measurement conditions. After removing the contribution from as-grown hole traps (AHT), a new method is proposed to capture the generated defects (GD) in their entirety. The n extracted by this method is around 0.2 and insensitive to measurement conditions for the four fabrication processes we tested. The model based on this method is verified by comparing its prediction with measurements. Under AC operation, the model predicts that GD can contribute to ~90% of NBTI at 10 years

Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable