Chip-scale Simulations in a Quantum-correlated Synthetic Space

An efficient simulator for quantum systems is one of the original goals for the efforts to develop a quantum computer [1]. In recent years, synthetic dimension in photonics [2] have emerged as a potentially powerful approach for simulation that is free from the constraint of geometric dimensionality. Here we demonstrate a quantum-correlated synthetic crystal, based upon a coherently-controlled broadband quantum frequency comb produced in a chip-scale dynamically modulated lithium niobate microresonator. The time-frequency entanglement inherent with the comb modes significantly extends the dimensionality of the synthetic space, creating a massive nearly 400 x 400 synthetic lattice with electrically-controlled tunability. With such a system, we are able to utilize the evolution of quantum correlations between entangled photons to perform a series of simulations, demonstrating quantum random walks, Bloch oscillations, and multi-level Rabi oscillations in the time and frequency correlation space. The device combines the simplicity of monolithic nanophotonic architecture, high dimensionality of a quantum-correlated synthetic space, and on-chip coherent control, which opens up an avenue towards chip-scale implementation of large-scale analog quantum simulation and computation [1,3,4] in the time-frequency domain.Comment: 21 pages, 14 figures (including supplementary materials

Single-mode Fiber and Few-Mode Fiber Photonic Lanterns Performance Evaluated for Use in a Scalable Real-Time Photon Counting Ground Receiver

Photonic lanterns provide an efficient way of coupling light from a single large-core fiber to multiple small-core fibers. This capability is of interest for space to ground communication applications. In these applications, the optical ground receivers require high-efficiency coupling from an atmospherically distorted focus spot to multiple fiber coupled single pixel super-conducting nanowire detectors. This paper will explore the use of photonic lanterns in a real-time ground receiver that is scalable and constructed with commercial parts. The number of small-core fibers that make a photonic lantern determines the number of spatial modes that they couple. For instance, lanterns made with n number of single-mode fibers can couple n number of spatial modes. Although the laser transmitted from a spacecraft originates as a Gaussian shape, the atmosphere distorts the beam profile by scattering energy into higher-order spatial modes. Therefore, if a ground receiver is sized for a target data rate with n number of detectors, the corresponding lantern made with single-mode fibers will couple n number of spatial modes. The energy of the transmitted beam scattered into spatial modes higher than n will be lost. This paper shows this loss may be reduced by making lanterns with few-mode fibers instead of single-mode fibers, increasing the number of spatial modes that can be coupled and therefore increasing the coupling efficiency to single pixel, single photon detectors. The free space to fiber coupling efficiency of these two types of photonic lanterns are compared over a range of the free-space coupling numerical apertures and mode field diameters. Results indicate the few mode fiber lantern has higher coupling efficiency for telescopes with longer focal lengths under higher turbulent conditions. Also presented is analysis of the jitter added to the system by the lanterns, showing the few-mode fiber photonic lantern adds more jitter than the single-mode fiber lantern, but less than a multimode fiber

Electrically empowered microcomb laser

Optical frequency comb underpins a wide range of applications from communication, metrology, to sensing. Its development on a chip-scale platform -- so called soliton microcomb -- provides a promising path towards system miniaturization and functionality integration via photonic integrated circuit (PIC) technology. Although extensively explored in recent years, challenges remain in key aspects of microcomb such as complex soliton initialization, high threshold, low power efficiency, and limited comb reconfigurability. Here we present an on-chip laser that directly outputs microcomb and resolves all these challenges, with a distinctive mechanism created from synergetic interaction among resonant electro-optic effect, optical Kerr effect, and optical gain inside the laser cavity. Realized with integration between a III-V gain chip and a thin-film lithium niobate (TFLN) PIC, the laser is able to directly emit mode-locked microcomb on demand with robust turnkey operation inherently built in, with individual comb linewidth down to 600 Hz, whole-comb frequency tuning rate exceeding $\rm 2.4\times10^{17}$ Hz/s, and 100% utilization of optical power fully contributing to comb generation. The demonstrated approach unifies architecture and operation simplicity, high-speed reconfigurability, and multifunctional capability enabled by TFLN PIC, opening up a great avenue towards on-demand generation of mode-locked microcomb that is expected to have profound impact on broad applications

Integrated Pockels Laser

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0$\times$10$^{18}$ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR

Self-injection-locked second-harmonic integrated source

High coherence visible and near-visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench-top lasers is an impediment to their transitioning beyond the laboratory. Here, a system-on-a-chip that emits high-coherence visible and near-visible lightwaves is demonstrated. The devices rely upon a new approach wherein wavelength conversion and coherence increase by self-injection-locking are combined within in a single nonlinear resonator. This simplified approach is demonstrated in a hybridly-integrated device and provides a short-term linewidth around 10-30 kHz. On-chip, converted optical power over 2 mW is also obtained. Moreover, measurements show that heterogeneous integration can result in conversion efficiency higher than 25% with output power over 11 mW. Because the approach uses mature III-V pump lasers in combination with thin-film lithium niobate, it can be scaled for low-cost manufacturing of high-coherence visible emitters. Also, the coherence generation process can be transferred to other frequency conversion processes including optical parametric oscillation, sum/difference frequency generation, and third-harmonic generation

Integrated Pockels laser.

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR

Mutations in SETD2 and genes affecting histone H3K36 methylation target hemispheric high-grade gliomas

Recurrent mutations affecting the histone H3.3 residues Lys27 or indirectly Lys36 are frequent drivers of pediatric high-grade gliomas (over 30 % of HGGs). To identify additional driver mutations in HGGs, we investigated a cohort of 60 pediatric HGGs using whole-exome sequencing (WES) and compared them to 543 exomes from non-cancer control samples. We identified mutations in SETD2, a H3K36 trimethyltransferase, in 15 % of pediatric HGGs, a result that was genome-wide significant (FDR = 0.029). Most SETD2 alterations were truncating mutations. Sequencing the gene in this cohort and another validation cohort (123 gliomas from all ages and grades) showed SETD2 mutations to be specific to high-grade tumors affecting 15 % of pediatric HGGs (11/73) and 8 % of adult HGGs (5/65) while no SETD2 mutations were identified in low-grade diffuse gliomas (0/45). Furthermore, SETD2 mutations were mutually exclusive with H3F3A mutations in HGGs (P = 0.0492) while they partly overlapped with IDH1 mutations (4/14), and SETD2-mutant tumors were found exclusively in the cerebral hemispheres (P = 0.0055). SETD2 is the only H3K36 trimethyltransferase in humans, and SETD2-mutant tumors showed a substantial decrease in H3K36me3 levels (P < 0.001), indicating that the mutations are loss-of-function. These data suggest that loss-of-function SETD2 mutations occur in older children and young adults and are specific to HGG of the cerebral cortex, similar to the H3.3 G34R/V and IDH mutations. Taken together, our results suggest that mutations disrupting the histone code at H3K36, including H3.3 G34R/V, IDH1 and/or SETD2 mutations, are central to the genesis of hemispheric HGGs in older children and young adults. © 2013 The Author(s)

Fusion of TTYH1 with the C19MC microRNA cluster drives expression of a brain-specific DNMT3B isoform in the embryonal brain tumor ETMR

Embryonal tumors with multilayered rosettes (ETMRs) are rare, deadly pediatric brain tumors characterized by high-level amplification of the microRNA cluster C19MC. We performed integrated genetic and epigenetic analyses of 12 ETMR samples and identified, in all cases, C19MC fusions to TTYH1 driving expression of the microRNAs. ETMR tumors, cell lines and xenografts showed a specific DNA methylation pattern distinct from those of other tumors and normal tissues. We detected extreme overexpression of a previously uncharacterized isoform of DNMT3B originating at an alternative promoter that is active only in the first weeks of neural tube development. Transcriptional and immunohistochemical analyses suggest that C19MC-dependent DNMT3B deregulation is mediated by RBL2, a known repressor of DNMT3B. Transfection with individual C19MC microRNAs resulted in DNMT3B upregulation and RBL2 downregulation in cultured cells. Our data suggest a potential oncogenic re-engagement of an early developmental program in ETMR via epigenetic alteration mediated by an embryonic, brain-specific DNMT3B isoform