Intrinsic and Atomic Layer Etching Enhanced Area-Selective Atomic Layer Deposition of Molybdenum Disulfide Thin Films

For continual scaling in microelectronics, new processes for precise high volume fabrication are required. Area-selective atomic layer deposition (ASALD) can provide an avenue for self-aligned material patterning and offers an approach to correct edge placement errors commonly found in top-down patterning processes. Two-dimensional transition metal dichalcogenides also offer great potential in scaled microelectronic devices due to their high mobilities and few-atom thickness. In this work, we report ASALD of MoS2 thin films by deposition with MoF6 and H2S precursor reactants. The inherent selectivity of the MoS2 atomic layer deposition (ALD) process is demonstrated by growth on common dielectric materials in contrast to thermal oxide/ nitride substrates. The selective deposition produced few layer MoS2 films on patterned growth regions as measured by Raman spectroscopy and time-of-flight secondary ion mass spectrometry. We additionally demonstrate that the selectivity can be enhanced by implementing atomic layer etching (ALE) steps at regular intervals during MoS2 growth. This area-selective ALD process provides an approach for integrating 2D films into next-generation devices by leveraging the inherent differences in surface chemistries and providing insight into the effectiveness of a supercycle ALD and ALE process

Thermal Atomic Layer Etching of MoS\u3csub\u3e2\u3c/sub\u3e Using MoF\u3csub\u3e6\u3c/sub\u3e and H\u3csub\u3e2\u3c/sub\u3eO

Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS2). We show that MoF6 can be used as a fluorination source, which, when combined with alternating exposures of H2O, etches both amorphous and crystalline MoS2 films deposited by atomic layer deposition. To characterize the ALE process and understand the etching reaction mechanism, in situ quartz crystal microbalance (QCM), Fourier transform infrared (FTIR), and quadrupole mass spectrometry (QMS) experiments were performed. From temperature-dependent in situ QCM experiments, the mass change per cycle was −5.7 ng/cm2 at 150 °C and reached −270.6 ng/cm2 at 300 °C, nearly 50× greater. The temperature dependence followed Arrhenius behavior with an activation energy of 13 ± 1 kcal/mol. At 200 °C, QCM revealed a mass gain following exposure to MoF6 and a net mass loss after exposure to H2O. FTIR revealed the consumption of Mo−O species and formation of Mo−F and MoFx=O species following exposures of MoF6 and the reverse behavior following H2O exposures. QMS measurements, combined with thermodynamic calculations, supported the removal of Mo and S through the formation of volatile MoF2O2 and H2S byproducts. The proposed etching mechanism involves a two-stage oxidation of Mo through the ALE halfreactions. Etch rates of 0.5 Å/cycle for amorphous films and 0.2 Å/cycle for annealed films were measured by ex situ ellipsometry, Xray reflectivity, and transmission electron microscopy. Precisely etching amorphous films and subsequently annealing them yielded crystalline, few-layer MoS2 thin films. This thermal MoS2 ALE process provides a new mechanism for fluorination-based ALE and offers a low-temperature approach for integrating amorphous and crystalline 2D MoS2 films into high-volume device manufacturing with tight thermal budgets

Nucleation and Growth of Molybdenum Disulfide Grown by Thermal Atomic Layer Deposition on Metal Oxides

To enable greater control over thermal atomic layer deposition (ALD) of molybdenum disulfide (MoS2), here we report studies of the reactions of molybdenum hexafluoride (MoF6) and hydrogen sulfide (H2S) with metal oxide substrates from nucleation to few-layer films. In situ quartz crystal microbalance experiments performed at 150, 200, and 250 °C revealed temperature-dependent nucleation behavior of the MoF6 precursor, which is attributed to variations in surface hydroxyl concentration with temperature. In situ Fourier transform infrared spectroscopy coupled with ex situ x-ray photoelectron spectroscopy (XPS) indicated the presence of molybdenum oxide and molybdenum oxyfluoride species during nucleation. Density functional theory calculations additionally support the formation of these species as well as predicted metal oxide to fluoride conversion. Residual gas analysis revealed reaction by-products, and the combined experimental and computational results provided insights into proposed nucleation surface reactions. With additional ALD cycles, Fourier transform infrared spectroscopy indicated steady film growth after ∼13 cycles at 200 °C. XPS revealed that higher deposition temperatures resulted in a higher fraction of MoS2 within the films. Deposition temperature was found to play an important role in film morphology with amorphous films obtained at 200 °C and below, while layered films with vertical platelets were observed at 250 °C. These results provide an improved understanding of MoS2 nucleation, which can guide surface preparation for the deposition of few-layer films and advance MoS2 toward integration into device manufacturing

Test of Factorization Hypothesis from Exclusive Non-leptonic B decays

We investigate the possibility of testing factorization hypothesis in non-leptonic exclusive decays of B-meson. In particular, we considered the non factorizable \bar{B^0} -> D^{(*)+} D_s^{(*)-} modes and \bar{B^0} -> D^{(*)+} (\pi^-, \rho^-) known as well-factorizable modes. By taking the ratios BR(\bar{B^0}-> D^{(*)+}D_s^{(*)-})/BR(\bar{B^0}-> D^{(*)+}(\pi^-,\rho^-)), we found that under the present theoretical and experimental uncertainties there's no evidence for the breakdown of factorization description to heavy-heavy decays of the B meson.Comment: 11 pages; submitted to PR

Study of the B−→Λc+Λˉc−K−B^{-} \to \Lambda_{c}^{+} \bar{\Lambda}_{c}^{-} K^{-} decay

The decay $B^{-} \to \Lambda_{c}^{+} \bar{\Lambda}_{c}^{-} K^{-}$ is studied in proton-proton collisions at a center-of-mass energy of $\sqrt{s}=13$ TeV using data corresponding to an integrated luminosity of 5 $\mathrm{fb}^{-1}$ collected by the LHCb experiment. In the $\Lambda_{c}^+ K^{-}$ system, the $\Xi_{c}(2930)^{0}$ state observed at the BaBar and Belle experiments is resolved into two narrower states, $\Xi_{c}(2923)^{0}$ and $\Xi_{c}(2939)^{0}$, whose masses and widths are measured to be $$m(\Xi_{c}(2923)^{0}) = 2924.5 \pm 0.4 \pm 1.1 \,\mathrm{MeV}, \\ m(\Xi_{c}(2939)^{0}) = 2938.5 \pm 0.9 \pm 2.3 \,\mathrm{MeV}, \\ \Gamma(\Xi_{c}(2923)^{0}) = \phantom{000}4.8 \pm 0.9 \pm 1.5 \,\mathrm{MeV},\\ \Gamma(\Xi_{c}(2939)^{0}) = \phantom{00}11.0 \pm 1.9 \pm 7.5 \,\mathrm{MeV},$$ where the first uncertainties are statistical and the second systematic. The results are consistent with a previous LHCb measurement using a prompt $\Lambda_{c}^{+} K^{-}$ sample. Evidence of a new $\Xi_{c}(2880)^{0}$ state is found with a local significance of $3.8\,\sigma$, whose mass and width are measured to be $2881.8 \pm 3.1 \pm 8.5\,\mathrm{MeV}$ and $12.4 \pm 5.3 \pm 5.8 \,\mathrm{MeV}$, respectively. In addition, evidence of a new decay mode $\Xi_{c}(2790)^{0} \to \Lambda_{c}^{+} K^{-}$ is found with a significance of $3.7\,\sigma$. The relative branching fraction of $B^{-} \to \Lambda_{c}^{+} \bar{\Lambda}_{c}^{-} K^{-}$ with respect to the $B^{-} \to D^{+} D^{-} K^{-}$ decay is measured to be $2.36 \pm 0.11 \pm 0.22 \pm 0.25$, where the first uncertainty is statistical, the second systematic and the third originates from the branching fractions of charm hadron decays.Comment: All figures and tables, along with any supplementary material and additional information, are available at https://cern.ch/lhcbproject/Publications/p/LHCb-PAPER-2022-028.html (LHCb public pages

Measurement of the ratios of branching fractions R(D∗)\mathcal{R}(D^{*}) and R(D0)\mathcal{R}(D^{0})

The ratios of branching fractions $\mathcal{R}(D^{*})\equiv\mathcal{B}(\bar{B}\to D^{*}\tau^{-}\bar{\nu}_{\tau})/\mathcal{B}(\bar{B}\to D^{*}\mu^{-}\bar{\nu}_{\mu})$ and $\mathcal{R}(D^{0})\equiv\mathcal{B}(B^{-}\to D^{0}\tau^{-}\bar{\nu}_{\tau})/\mathcal{B}(B^{-}\to D^{0}\mu^{-}\bar{\nu}_{\mu})$ are measured, assuming isospin symmetry, using a sample of proton-proton collision data corresponding to 3.0 fb${ }^{-1}$ of integrated luminosity recorded by the LHCb experiment during 2011 and 2012. The tau lepton is identified in the decay mode $\tau^{-}\to\mu^{-}\nu_{\tau}\bar{\nu}_{\mu}$. The measured values are $\mathcal{R}(D^{*})=0.281\pm0.018\pm0.024$ and $\mathcal{R}(D^{0})=0.441\pm0.060\pm0.066$, where the first uncertainty is statistical and the second is systematic. The correlation between these measurements is $\rho=-0.43$. Results are consistent with the current average of these quantities and are at a combined 1.9 standard deviations from the predictions based on lepton flavor universality in the Standard Model.Comment: All figures and tables, along with any supplementary material and additional information, are available at https://cern.ch/lhcbproject/Publications/p/LHCb-PAPER-2022-039.html (LHCb public pages

Multidifferential study of identified charged hadron distributions in ZZ-tagged jets in proton-proton collisions at s=\sqrt{s}=13 TeV

Jet fragmentation functions are measured for the first time in proton-proton collisions for charged pions, kaons, and protons within jets recoiling against a $Z$ boson. The charged-hadron distributions are studied longitudinally and transversely to the jet direction for jets with transverse momentum 20 $< p_{\textrm{T}} < 100$ GeV and in the pseudorapidity range $2.5 < \eta < 4$. The data sample was collected with the LHCb experiment at a center-of-mass energy of 13 TeV, corresponding to an integrated luminosity of 1.64 fb$^{-1}$. Triple differential distributions as a function of the hadron longitudinal momentum fraction, hadron transverse momentum, and jet transverse momentum are also measured for the first time. This helps constrain transverse-momentum-dependent fragmentation functions. Differences in the shapes and magnitudes of the measured distributions for the different hadron species provide insights into the hadronization process for jets predominantly initiated by light quarks.Comment: All figures and tables, along with machine-readable versions and any supplementary material and additional information, are available at https://cern.ch/lhcbproject/Publications/p/LHCb-PAPER-2022-013.html (LHCb public pages

Motor primitives in space and time via targeted gain modulation in cortical networks

Motor cortex (M1) exhibits a rich repertoire of activities to support the generation of complex movements. Recent network models capture many qualitative aspects of M1 dynamics, but they can generate only a few distinct movements (all of the same duration). We demonstrate that simple modulation of neuronal input–output gains in recurrent neuronal network models with fixed connectivity can dramatically reorganize neuronal activity and consequently downstream muscle outputs. We show that a relatively small number of modulatory control units provide sufficient flexibility to adjust high-dimensional network activity using a simple reward-based learning rule. Furthermore, novel movements can be assembled from previously-learned primitives and we can separately change movement speed while preserving movement shape. Our results provide a new perspective on the role of modulatory systems in controlling recurrent cortical activity.Our work was supported by grants from the Wellcome Trust (TPV and JPS WT100000, 246 GH 202111/Z/16/Z) and the Engineering and Physical Sciences Research Council (JPS)

Characterisation of in-hospital complications associated with COVID-19 using the ISARIC WHO Clinical Characterisation Protocol UK: a prospective, multicentre cohort study

Background: COVID-19 is a multisystem disease and patients who survive might have in-hospital complications. These complications are likely to have important short-term and long-term consequences for patients, health-care utilisation, health-care system preparedness, and society amidst the ongoing COVID-19 pandemic. Our aim was to characterise the extent and effect of COVID-19 complications, particularly in those who survive, using the International Severe Acute Respiratory and Emerging Infections Consortium WHO Clinical Characterisation Protocol UK. Methods: We did a prospective, multicentre cohort study in 302 UK health-care facilities. Adult patients aged 19 years or older, with confirmed or highly suspected SARS-CoV-2 infection leading to COVID-19 were included in the study. The primary outcome of this study was the incidence of in-hospital complications, defined as organ-specific diagnoses occurring alone or in addition to any hallmarks of COVID-19 illness. We used multilevel logistic regression and survival models to explore associations between these outcomes and in-hospital complications, age, and pre-existing comorbidities. Findings: Between Jan 17 and Aug 4, 2020, 80 388 patients were included in the study. Of the patients admitted to hospital for management of COVID-19, 49·7% (36 367 of 73 197) had at least one complication. The mean age of our cohort was 71·1 years (SD 18·7), with 56·0% (41 025 of 73 197) being male and 81·0% (59 289 of 73 197) having at least one comorbidity. Males and those aged older than 60 years were most likely to have a complication (aged ≥60 years: 54·5% [16 579 of 30 416] in males and 48·2% [11 707 of 24 288] in females; aged &lt;60 years: 48·8% [5179 of 10 609] in males and 36·6% [2814 of 7689] in females). Renal (24·3%, 17 752 of 73 197), complex respiratory (18·4%, 13 486 of 73 197), and systemic (16·3%, 11 895 of 73 197) complications were the most frequent. Cardiovascular (12·3%, 8973 of 73 197), neurological (4·3%, 3115 of 73 197), and gastrointestinal or liver (0·8%, 7901 of 73 197) complications were also reported. Interpretation: Complications and worse functional outcomes in patients admitted to hospital with COVID-19 are high, even in young, previously healthy individuals. Acute complications are associated with reduced ability to self-care at discharge, with neurological complications being associated with the worst functional outcomes. COVID-19 complications are likely to cause a substantial strain on health and social care in the coming years. These data will help in the design and provision of services aimed at the post-hospitalisation care of patients with COVID-19. Funding: National Institute for Health Research and the UK Medical Research Council

Atomic Layer Processing of Molybdenum Disulfide Thin Films

As feature sizes in semiconductor devices continue to shrink, it is of upmost importance to synthesize materials that can accommodate the drastic degree of scaling. One such material receiving great attention is molybdenum disulfide (MoS2), which is a semiconducting two-dimensional (2D) material in its most favorable few-layer form. The distinctive electrical properties make few to single-layer MoS2 a potential candidate to replace silicon in many microelectronic devices. MoS2 research is commonly conducted on mechanically exfoliated films due to the high quality, low defect layers that can be prepared. However, exfoliation is not a scalable method due to the lack of dimensional control and poor layer reproducibility. Currently, there is a lack of suitable methods for integrating MoS2 films into manufacturing. Thus, there is a need for scalable industry-compatible processing methods to enable integration of MoS2 in modern electronics manufacturing. One processing technique that can be used for MoS2 integration is atomic layer deposition (ALD). This technique is suitable because of its self-limiting, vapor-phase surface reactions used for thin film deposition. This process offers low temperature deposition of thin and conformal films with angstrom level control. This method is commonly used in high volume manufacturing, making it a clear choice as the processing technique that can be used for MoS2 integration. One drawback, however, is the lack of in-depth knowledge of ALD MoS2 thin films. By investigating the nucleation and growth of MoS2 films, key insights can be established to allow for greater control over the deposition process and resulting material quality. This understanding of the ALD nucleation process can also help identify new processing methods, such as area-selective ALD (ASALD). ASALD can further support the efforts towards MoS2 integration. This process can help solve the issue of placement errors found in standard lithography patterning. It can additionally provide another tool for creating complex device structures. Lastly, other processing techniques such as atomic layer etching (ALE) are also critical in manufacturing. Similar to ALD, ALE is the complementary vapor phase technique for layer-by-layer etching of uniform thin films. Combined, ALD and ALE provide scalable approaches for precise atomic layer processing and advanced manufacturing. To realize these useful processing methods, efforts need to be made to better understand the film substrate interactions and subsequent film growth or removal. In this work, we present the study of the early stages of growth and nucleation of MoS2 films on common metal oxide surfaces used in semiconductor manufacturing. We show the temperature dependence of nucleation over the range of 150-250 °C. This work identifies that hydroxyl concentrations on metal oxide surfaces are directly related to the disassociation of MoF6 precursor on the substrate surface. This precursor disassociation leads to metal fluoride bonding, revealing the interface layer formation between deposited MoS2 films and the substrate. Film morphology was additionally studied, revealing the critical role that temperature has on growth mechanisms during MoS2 ALD. At increased growth temperatures, MoS2 films exhibited higher degrees of MoS2 bonding and crystalline grains oriented perpendicular to the growth surface. This study of the nucleation and growth process provides a greater understanding of 2D film-substrate interactions and offers more control over processing. Additionally, this work explores ASALD of MoS2 films on common semiconductor surfaces by exploiting inherent differences in surface chemistry between substrate materials. Selective ALD was established between various materials including alumina and thermal oxide substrates. To our knowledge, this is the first ASALD process for a 2D material that achieves selectivity without the use of inhibitors. Lastly, we established a new thermal ALE process for the removal of MoS2 films. This work identifies the removal of the MoS2 films by means of fluorination and oxidation to create volatile moly-oxyfluoride byproducts. This method was shown to etch both amorphous and crystalline ALD films, where the etch rates were highly dependent on crystallinity and temperature. This work provides insights and processing required for MoS2 integration into nanoscale electronics, as well as many other applications. By the study of both the deposition and etching of MoS2 films, we provide a greater depth of knowledge that will be required for MoS2 integration into nanoscale manufacturing