Analiza tehnologičnosti personalizovanih implantata metodama veštačke inteligencije

Customized implants are complex free geometrical forms. Requests for its precision, appropriate material selection and manufacturing time require that even at the designing phase right decisions are made. That is why customized implant manufacturability analysis and the use of artificial intelligence are very important. Customized implant knowledge model will be created and system for acquisition, systematization, and modeling of knowledge about customized implant designing and manufacturing will be developed. By creating knowledge basis we make a foundation for creating adaptable expert system for customized implant manufacturability analysis. It will be a part of a system for designing, manufacturing and monitoring workflow, based on web technologies

PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients

The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS

Radiation sensitive MOSFETs irradiated with various positive gate biases

The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst

Istraživanje mogućnosti primene lasera u čišćenju arheoloških metalnih predmeta

The paper presents the results of laser cleaning of corrosive and other deposits on a metal archaeological artefact from the Danube. Nd: YAG laser, energy up to 750 mJ and wavelengths λ = 1064 nm and 532 nm is used. The cleaning efficiency was examined in the function of laser energy, wavelength, and number of pulses, i.e. the time of exposure and moist of the surface of the sample. The results of removal of unwanted layers from the surface of the artefact and morphological changes on the base material were examined by optical and scanning electronic microscopy (OM and SEM). Micro-chemical changes have been determined by energy dispersive X-ray analysis (EDX) and x-ray fluorescence spectrometry (XRF). It has been shown that λ = 532 nm has higher efficiency for cleaning this sample and that the surface moisture has very small influence on laser cleaning efficiency. Research carried out on the archaeological object from the Danube shows that the application of lasers in the cleaning of undesirable layers is very efficient, safe and environmentally friendly.U radu su prikazani rezultati laserskog čišćenja korozivnih i drugih naslaga na metalnom arheološkom predmetu koji je nađen u Dunavu. Korišćen je Nd:YAG laser, energije do 750mJ i talasne dužine λ=1064nm i 532nm. Efikasnost čišćenja je ispitivana u funkciji energije lasera, talasne dužine, broja impulsa, odnosno vremena eksponiranja i vlažnosti površine uzorka. Rezultati skidanja nepoželjnih slojeva sa površine uzorka, kao i morfoloških promena na osnovnom materijalu, ispitivani su optičkom i skenirajućom elektronskom mikroskopijom ( OM i SEM), a ispitivanje mikrohemijskih promena izvršeno je pomoću energijske disperzione spektrometrijske analize (EDX) i rendgensko fluorescentnom spektroskopijom (XRF). Pokazano je da za čišćenje ovog uzorka veću efikasnost ima λ= 532nm i da je uticaj vlažnosti površine na efikasnost laserskog čišćenja veoma mali. Istraživanja obavljena na arheološkom uzorku iz Dunava, pokazuju da je primena lasera u čišćenju nepoželjnih slojeva veoma efikasna, bezbedna i ekološki prihvatljiva

Analiza tehnologičnosti personalizovanih implantata metodama veštačke inteligencije

Customized implants are complex free geometrical forms. Requests for its precision, appropriate material selection and manufacturing time require that even at the designing phase right decisions are made. That is why customized implant manufacturability analysis and the use of artificial intelligence are very important. Customized implant knowledge model will be created and system for acquisition, systematization, and modeling of knowledge about customized implant designing and manufacturing will be developed. By creating knowledge basis we make a foundation for creating adaptable expert system for customized implant manufacturability analysis. It will be a part of a system for designing, manufacturing and monitoring workflow, based on web technologies

Analiza tehnologičnosti personalizovanih implantata metodama veštačke inteligencije

Customized implants are complex free geometrical forms. Requests for its precision, appropriate material selection and manufacturing time require that even at the designing phase right decisions are made. That is why customized implant manufacturability analysis and the use of artificial intelligence are very important. Customized implant knowledge model will be created and system for acquisition, systematization, and modeling of knowledge about customized implant designing and manufacturing will be developed. By creating knowledge basis we make a foundation for creating adaptable expert system for customized implant manufacturability analysis. It will be a part of a system for designing, manufacturing and monitoring workflow, based on web technologies

Influence of Spike Shape at Supersonic Flow Past Blunt-Nosed Bodies

Abstract. In order to eliminate the appearance of a strong shock wave at a supersonic flight of a missile, which considerably increases the drag during its flight through the air, a spike is mounted on its nose. Presented paper offers the results of an experimental analysis of the influence of the spike's shape on the aerodynamic coefficients (drag, lift and pitching moment coefficient, as well as the location of th

Computer Aided Design and Simulation of a Machine Production Line for Heating, Ventilation and Air-Conditioning Duct Systems

The great market expansion includes products such as heating ducts, ventilation and air-conditioning (HVAC) systems that are of interest in Engineering and Design. Machine design in general, and especially computer aided design (CAD) tools give the designer the opportunity to test different ideas, make needed models and, supported by corresponding calculations, help to find an optimal solution for the desired machine. This paper presents an attempt to design a machine production line for HVAC duct systems using the advanced software tool CATIA V5. Aimed to complete the design process, a few simulations and the necessary structural analysis is given in the paper

Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors

In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate

Sensitivity and fading of irradiated RADFETs with different gate voltages

The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters