2,239 research outputs found

    Distinct doping dependences of the pseudogap and superconducting gap La2x_{2-x}Srx_{x}CuO4_4 cuprate superconductors

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    We have performed a temperature-dependent angle-integrated photoemission study of lightly-doped to heavily-overdoped La2x_{2-x}Srx_{x}CuO4_4 and oxygen-doped La2_2CuO4.10_{4.10}. We found that both the magnitude Δ\Delta* of the (small) pseudogap and the temperature \textit{T}* at which the pseudogap is opened increases with decreasing hole concentration, consistent with previous studies. On the other hand, the superconducting gap Δsc\Delta_{sc} was found to remain small for decreasing hole concentration. The results can be explained if the superconducting gap opens only on the Fermi arc around the nodal (0,0)-(π,π\pi,\pi) direction while the pseudogap opens around \sim(π\pi, 0).Comment: 4 pages, 3 figure

    Proportional drift tubes for large area muon detectors

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    A proportional drift chamber which consists of eight rectangular drift tubes with cross section of 10 cm x 5 cm, a sense wire of 100 micron phi gold-plated tungsten wire and the length of 6 m, was tested using cosmic ray muons. Spatial resolution (rms) is between 0.5 and 1 mm over drift space of 50 mm, depending on incident angle and distance from sense wire

    Coherent quasi-particles-to-incoherent hole-carriers crossover in underdoped cuprates

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    In underdoped cuprates, only a portion of the Fermi surface survives as Fermi arcs due to pseudogap opening. In hole-doped La2_{2}CuO4_4, we have deduced the "coherence temperature" TcohT_{coh} of quasi-particles on the Fermi arc above which the broadened leading edge position in angle-integrated photoemission spectra is shifted away from the Fermi level and the quasi-particle concept starts to lose its meaning. TcohT_{coh} is found to rapidly increase with hole doping, an opposite behavior to the pseudogap temperature TT^*. The superconducting dome is thus located below both TT^* and TcohT_{coh}, indicating that the superconductivity emerges out of the coherent Fermionic quasi-particles on the Fermi arc. TcohT_{coh} remains small in the underdoped region, indicating that incoherent charge carriers originating from the Fermi arc are responsible for the apparently metallic transport at high temperatures

    Fe/Tb薄膜におけるFe 2p XPS スペクトルの膜厚及び温度依存性

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    Seven Fe-films with a thickness different from one another have been prepared by deposited on clean Tb surfaces with accuracy of 0.1 nm(Fe(d nm)/Tb(10.0nm) (d=0.2,0.3,0.5,1.0,2.0,5.0,10.0)),and the Fe 2p XPS spectra of the films have been, in situ, measured at about 8K and room temperature. A shift in the binding energy position of the Fe 2p line is found to depend on the film thickness and the temperature. The shift at room temperature increases almost monotonously as the film thickness increases in the range of 0.2- 2nm,and is nearly the same in the range of 2-10nm. The shift at about 8K,on the other hand,seems to have a composite structure in the range of 0.2-2nm and is the same in the range of 2-10nm. Taking account of an inelastic mean-free-path of about 1.2nm in the Fe film, this implies that the influence of an interface on the electronic states of the Fe atom as well as the Tb atom in Tb/Fe film and the Sm atom in Sm/Fe extends to about 0.8nm from the interface at most and that some phase transition would exist between about 8K and room temperature. Detailed discussion will be presented elsewhere

    Sm表面上のFe薄膜におけるFe 2p XPSスペクトルの膜厚依存性

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    Eight Fe-films with a thickness different from one another have been prepared by deposited on clean Sm surfaces with accuracy of 0.1 nm (Fe(d nm)/Sm(10.0nm)(d=0.3,0.5,0.7,1.0,1.5,2.0,5.0,10.0)),and the Fe 2p3/2XPS spectra of the films have been,in situ,measured at about 8K and room temperature. A shift in the binding energy position of the Fe 2p3/2lines is found to depend on the film thickness and the temperature. At both temperatures,the shift from a peak position of the Fe 2p3/2line in Fe(10.0nm)/Sm(10.0nm)is hardly found in the range of~1-10 nm,whereas it increases monotonously to the low binding energy side as the film thickness decreases in the range of 0.1-~1nm. The value of the shift at about 8K seems to be larger than that at room temperature slightly in the range of 0.1-~1nm. Comparing with the case of Sm(d nm)/Fe(10.0nm) from Chihiro IIJIMA and Makoto OKUSAWA (2010),this suggests that a change in an electronic state takes place in the vicinity of a Fe-Sm interface,and that a charge density on the Fe side becomes large and that on the Sm side small. Detailed discussion will be presented elsewher
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