Progress in Nanoporous Templates: Beyond Anodic Aluminum Oxide and Towards Functional Complex Materials

Successful synthesis of ordered porous, multi-component complex materials requires a series of coordinated processes, typically including fabrication of a master template, deposition of materials within the pores to form a negative structure, and a third deposition or etching process to create the final, functional template. Translating the utility and the simplicity of the ordered nanoporous geometry of binary oxide templates to those comprising complex functional oxides used in energy, electronic, and biology applications has been met with numerous critical challenges. This review surveys the current state of commonly used complex material nanoporous template synthesis techniques derived from the base anodic aluminum oxide (AAO) geometry

Wafer-Scale Nanopatterning and Translation into High-Performance Piezoelectric Nanowires

The development of a facile method for fabricating one-dimensional, precisely positioned nanostructures over large areas offers exciting opportunities in fundamental research and innovative applications. Large-scale nanofabrication methods have been restricted in accessibility due to their complexity and cost. Likewise, bottom-up synthesis of nanowires has been limited in methods to assemble these structures at precisely defined locations. Nanomaterials such as PbZr_xTi_(1−x)O_3 (PZT) nanowires (NWs)—which may be useful for nonvolatile memory storage (FeRAM), nanoactuation, and nanoscale power generation—are difficult to synthesize without suffering from polycrystallinity or poor stoichiometric control. Here, we report a novel fabrication method which requires only low-resolution photolithography and electrochemical etching to generate ultrasmooth NWs over wafer scales. These nanostructures are subsequently used as patterning templates to generate PZT nanowires with the highest reported piezoelectric performance (d_(eff) ~ 145 pm/V). The combined large-scale nanopatterning with hierarchical assembly of functional nanomaterials could yield breakthroughs in areas ranging from nanodevice arrays to nanodevice powering

Synthesis of phosphonic acid ligands for nanocrystal surface functionalization and solution processed memristors

Here, we synthesized 2-ethylhexyl, 2-hexyldecyl, 2-[2-(2-methoxyethoxy)ethoxy]ethyl, oleyl, and n-octadecyl phosphonic acid and used them to functionalize CdSe and HfO2 nanocrystals. In contrast to branched carboxylic acids, postsynthetic surface functionalization of CdSe and HfO2 nanocrystals was readily achieved with branched phosphonic acids. Phosphonic acid capped HfO2 nanocrystals were subsequently evaluated as memristors using conductive atomic force microscopy. We found that 2-ethylhexyl phosphonic acid is a superior ligand, combining a high colloidal stability with a compact ligand shell that results in a record-low operating voltage that is promising for application in flexible electronics

Probing vacancy behavior across complex oxide heterointerfaces

Oxygen vacancies () play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO3 (Nb:SrTiO3) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (\u3c100 \u3enm) vacancy profiles within STO using (T = 500°C) in situ scanning probes and semiconductor analysis. Oxygen scavenging occurring during pulsed laser deposition reduces Nb:STO substantially, which partially reoxidizes in an oxygen-rich environment upon cooling. These results (i) introduce the means to spatially resolve quantitative vacancy distributions across oxide films and (ii) indicate the mechanisms by which oxide thin films enhance and then deplete vacancies within the underlying substrate

Progress in Nanoporous Templates: Beyond Anodic Aluminum Oxide and Towards Functional Complex Materials

Successful synthesis of ordered porous, multi-component complex materials requires a series of coordinated processes, typically including fabrication of a master template, deposition of materials within the pores to form a negative structure, and a third deposition or etching process to create the final, functional template. Translating the utility and the simplicity of the ordered nanoporous geometry of binary oxide templates to those comprising complex functional oxides used in energy, electronic, and biology applications has been met with numerous critical challenges. This review surveys the current state of commonly used complex material nanoporous template synthesis techniques derived from the base anodic aluminum oxide (AAO) geometry

In situ surface potential evolution along Au/Gd:CeO2 electrode interfaces

We present an investigation of electroactive Au/gadolinium doped ceria electrode interfaces under CO2/CO co-electrolysis environments using a combination of in situ high temperature scanning surface potential microscopy (HT-SSPM) and modified Poisson-Cahn (PC) models. Here charged surface adsorbate-oxygen vacancy inter- actions manifested in HT-SSPM potential profiles as small perturbations of opposite sign in reference to the applied biases. The positive deviation of surface potential on Au from applied cathodic biases is attributed to the work function difference between gold (φAu ∼ 5.31 eV) and graphitic carbon deposits (φC ∼ 5.0 eV) formed through CO disproportionation. The negative potential deviation from the applied anodic bias is attributed to negatively charged carboxylates. Results of the PC model confirmed the affinity of oxygen vacancies for the surface, thus supporting in situ experimental evidence of surface vacancy accumulation/depletion processes induced by cathodic/anodic biases. © 2017 Author(s). All article content, except where oth- erwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). [http://dx.doi.org/10.1063/1.4977206

Direct Observation of Electrically Conductive Pili Emanating from Geobacter sulfurreducens

Geobacter sulfurreducens is a model microbe for elucidating the mechanisms for extracellular electron transfer in several biogeochemical cycles, bioelectrochemical applications, and microbial metal corrosion. Multiple lines of evidence previously suggested that electrically conductive pili (e-pili) are an essential conduit for long-range extracellular electron transport in G. sulfurreducens. However, it has recently been reported that G. sulfurreducens does not express e-pili and that filaments comprised of multi-heme c-type cytochromes are responsible for long-range electron transport. This possibility was directly investigated by examining cells, rather than filament preparations, with atomic force microscopy. Approximately 90% of the filaments emanating from wild-type cells had a diameter (3 nm) and conductance consistent with previous reports of e-pili harvested from G. sulfurreducens or heterologously expressed in Escherichia coli from the G. sulfurreducens pilin gene. The remaining 10% of filaments had a morphology consistent with filaments comprised of the c-type cytochrome OmcS. A strain expressing a modified pilin gene designed to yield poorly conductive pili expressed 90% filaments with a 3-nm diameter, but greatly reduced conductance, further indicating that the 3-nm diameter conductive filaments in the wild-type strain were e-pili. A strain in which genes for five of the most abundant outer-surface c-type cytochromes, including OmcS, were deleted yielded only 3-nm-diameter filaments with the same conductance as in the wild type. These results demonstrate that e-pili are the most abundant conductive filaments expressed by G. sulfurreducens, consistent with previous functional studies demonstrating the need for e-pili for long-range extracellular electron transfer. IMPORTANCE Electroactive microbes have significant environmental impacts, as well as applications in bioenergy and bioremediation. The composition, function, and even existence of electrically conductive pili (e-pili) has been one of the most contentious areas of investigation in electromicrobiology, in part because e-pili offer a mechanism for long-range electron transport that does not involve the metal cofactors common in much of biological electron transport. This study demonstrates that e-pili are abundant filaments emanating from Geobacter sulfurreducens, which serves as a model for long-range extracellular electron transfer in direct interspecies electron transfer, dissimilatory metal reduction, microbe-electrode exchange, and corrosion caused by direct electron uptake from Fe(0). The methods described in this study provide a simple strategy for evaluating the distribution of conductive filaments throughout the microbial world with an approach that avoids artifactual production and/or enrichment of filaments that may not be physiologically relevant

Synthesis of Phosphonic Acid Ligands for Nanocrystal Surface Functionalization and Solution Processed Memristors

Here we synthesize 2-ethylhexyl, 2-hexyldecyl, 2-[2-(2-methoxyethoxy)ethoxy]ethyl, oleyl and n-octadecyl phosphonic acid and use them to functionalize CdSe and HfO2 nanocrystals. In contrast to branched carboxylic acids, post-synthetic surface functionalization of CdSe and HfO2 nanocrystals is readily achieved with branched phosphonic acids. A simple flow coating process is used to deposit ribbons of individual phosphonic acid capped HfO2 nanocrystals, which are subsequently evaluated as a memristor using conductive atomic force microscopy (c-AFM). We find that 2-ethylhexyl phosphonic acid is a superior ligand, combining a high colloidal stability with a compact ligand shell that results in a record-low operating voltage that is promising for application in flexible electronics. </p