Infrared photocurrent with one- and two-photon absorptions in a double-barrier quantum well system

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)We present a theoretical investigation of a double-barrier quantum-well infrared photodetector (QWIP) having two-color selectivity. The quantum well is placed between a pair of potential barriers in order to increase selectivity through modulation of the continuum states. This also leads to a potential decrease in the dark current. Calculations are carried in the effective-mass approximation using a single-electron hamiltonian. The approach used to obtain the photocurrent yields the observation of single as well as many-photon transitions in a unified manner, by naturally accounting for real and virtual processes through intermediate states that take part in the generation of photocurrent. The two-color selectivity of the calculated photocurrent spectra comes from both one-and two-photon transitions. The performance of the system studied is compared to the results for the isolated quantum well and the advantages of the double barrier are pointed out. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662867]11010DISSE-Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos SemicondutoresConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Electron-spin polarization near the Fermi level in n-type modulation-doped semiconductor quantum wells

We study the spin polarization of optically created electrons near the Fermi energy in an n-type modulation-doped single quantum well. In our system the Fermi level is slightly above the second confined conduction subband. The results reveal that electrons optically created close to the Fermi level partially conserve their spin polarization, despite the presence of the electron gas. Data obtained by changing the excitation intensity show that exchange interaction among optically created electrons and holes dominates the spin flip processes in the vicinity of the Fermi edge. [S0163-1829(99)51412-4].5912R7813R781

Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field

Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed

Spin- and energy relaxation of hot electrons at GaAs surfaces

The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.Comment: 33 pages, 12 figures; earlier submission replaced by corrected and expanded version; eps figures now included in the tex

Photo-Induced Spin Dynamics in Semiconductor Quantum Wells

We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (PPL) with and without magnetic field is studied. ThePPLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,PPLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field

Bright excitons in monolayer transition metal dichalcogenides: from Dirac cones to Dirac saddle points

In monolayer transition metal dichalcogenides, tightly bound excitons have been discovered with a valley pseudospin that can be optically addressed through polarization selection rules. Here, we show that this valley pseudospin is strongly coupled to the exciton center-of-mass motion through electron-hole exchange. This coupling realizes a massless Dirac cone with chirality index I=2 for excitons inside the light cone, i.e. bright excitons. Under moderate strain, the I=2 Dirac cone splits into two degenerate I=1 Dirac cones, and saddle points with a linear Dirac spectrum emerge in the bright exciton dispersion. Interestingly, after binding an extra electron, the charged exciton becomes a massive Dirac particle associated with a large valley Hall effect protected from intervalley scattering. Our results point to unique opportunities to study Dirac physics, with exciton's optical addressability at specifiable momentum, energy and pseudospin. The strain-tunable valley-orbit coupling also implies new structures of exciton condensates, new functionalities of excitonic circuits, and possibilities for mechanical control of valley pseudospin

Valley coherent exciton-polaritons in a monolayer semiconductor

Two-dimensional transition metal dichalcogenides (TMDs) provide a unique possibility to generate and read-out excitonic valley coherence using linearly polarized light, opening the way to valley information transfer between distant systems. However, these excitons have short lifetimes (ps) and efficiently lose their valley coherence via the electron-hole exchange interaction. Here, we show that control of these processes can be gained by embedding a monolayer of WSe2 in an optical microcavity, forming part-light-part-matter exciton-polaritons. We demonstrate optical initialization of valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than displayed by bare excitons. We utilize an external magnetic field alongside selective exciton-cavity-mode detuning to control the polariton valley pseudospin vector rotation, which reaches 45° at B = 8 T. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures

Valley-addressable polaritons in atomically thin semiconductors

The locking of the electron spin to the valley degree of freedom in transition metal dichalcogenide (TMD) monolayers has seen these materials emerge as a promising platform in valleytronics. When embedded in optical microcavities, the large oscillator strengths of excitonic transitions in TMDs allow the formation of polaritons that are part-light part-matter quasiparticles. Here, we report that polaritons in MoSe2 show an efficient retention of the valley pseudospin contrasting them with excitons and trions in this material. We find that the degree of the valley pseudospin retention is dependent on the photon, exciton and trion fractions in the polariton states. This allows us to conclude that in the polaritonic regime, cavity-modified exciton relaxation inhibits loss of the valley pseudospin. The valley-addressable exciton-polaritons and trion-polaritons presented here offer robust valley-polarized states with the potential for valleytronic devices based on TMDs embedded in photonic structures and valley-dependent nonlinear polariton–polariton interactions

Dynamic localization in finite quantum-dot superlattices: A pure ac field effect

We propose that dynamic localization can be unambiguously observed through the linear optical absorption coefficient of a finite quantum dot superlattice. It is shown that the miniband collapse is almost exact in a pure ac field driven system. In the presence of Coulomb interaction, the dynamic localization is partially preserved, showing clear fingerprints in the modulation of the excitonic spectra. The spectra are obtained within an extended semiconductor Bloch equation framework, taking into account the center-of-mass motion for a finite system.70