4,409 research outputs found

    Electron release of rare gas atom clusters under an intense laser pulse

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    Calculating the energy absorption of atomic clusters as a function of the laser pulse length TT we find a maximum for a critical T∗T^*. We show that T∗T^* can be linked to an optimal cluster radius R∗R^*. The existence of this radius can be attributed to the enhanced ionization mechanism originally discovered for diatomic molecules. Our findings indicate that enhanced ionization should be operative for a wide class of rare gas clusters. From a simple Coulomb explosion ansatz, we derive an analytical expression relating the maximum energy release to a suitably scaled expansion time which can be expressed with the pulse length T∗T^*.Comment: 4 pages, 5 figure

    Uniform convergence to equilibrium for granular media

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    We study the long time asymptotics of a nonlinear, nonlocal equation used in the modelling of granular media. We prove a uniform exponential convergence to equilibrium for degenerately convex and non convex interaction or confinement potentials, improving in particular results by J. A. Carrillo, R. J. McCann and C. Villani. The method is based on studying the dissipation of the Wasserstein distance between a solution and the steady state

    Energy spectrum and Landau levels in bilayer graphene with spin-orbit interaction

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    We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion. Within an effective low energy approach (L\"owdin partitioning theory) we derive an effective Hamiltonian for bilayer graphene that incorporates the influence of the Zeeman effect, the Rashba spin-orbit interaction, and inclusively, the role of the intrinsic spin-orbit interaction on the same footing. Particular attention is spent to the energy spectrum and Landau levels. Our modeling unveil the strong influence of the Rashba coupling λR\lambda_R in the spin-splitting of the electron and hole bands. Graphene bilayers with weak Rashba spin-orbit interaction show a spin-splitting linear in momentum and proportional to λR\lambda_R , but scales inversely proportional to the interlayer hopping energy γ1\gamma_1. However, at robust spin-orbit coupling λR\lambda_R the energy spectrum shows a strong warping behavior near the Dirac points. We find the bias-induced gap in bilayer graphene to be decreasing with increasing Rashba coupling, a behavior resembling a topological insulator transition. We further predict an unexpected assymetric spin-splitting and crossings of the Landau levels due to the interplay between the Rashba interaction and the external bias voltage. Our results are of relevance for interpreting magnetotransport and infrared cyclotron resonance measurements, including also situations of comparatively weak spin-orbit coupling.Comment: 25 pages, 5 figure

    Controlled Generation of Dark Solitons with Phase Imprinting

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    The generation of dark solitons in Bose-Einstein condensates with phase imprinting is studied by mapping it into the classic problem of a damped driven pendulum. We provide simple but powerful schemes of designing the phase imprint for various desired outcomes. We derive a formula for the number of dark solitons generated by a given phase step, and also obtain results which explain experimental observations.Comment: 4pages, 4 figure

    Gate-tunable bandgap in bilayer graphene

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    The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure

    Doppler cooling of gallium atoms: 2. Simulation in complex multilevel systems

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    This paper derives a general procedure for the numerical solution of the Lindblad equations that govern the coherences arising from multicoloured light interacting with a multilevel system. A systematic approach to finding the conservative and dissipative terms is derived and applied to the laser cooling of gallium. An improved numerical method is developed to solve the time-dependent master equation and results are presented for transient cooling processes. The method is significantly more robust, efficient and accurate than the standard method and can be applied to a broad range of atomic and molecular systems. Radiation pressure forces and the formation of dynamic dark-states are studied in the gallium isotope 66Ga.Comment: 15 pages, 8 figure

    Energy gaps at neutrality point in bilayer graphene in a magnetic field

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    Utilizing the Baym-Kadanoff formalism with the polarization function calculated in the random phase approximation, the dynamics of the ν=0\nu=0 quantum Hall state in bilayer graphene is analyzed. Two phases with nonzero energy gap, the ferromagnetic and layer asymmetric ones, are found. The phase diagram in the plane (Δ~0,B)(\tilde{\Delta}_0,B), where Δ~0\tilde{\Delta}_0 is a top-bottom gates voltage imbalance, is described. It is shown that the energy gap scales linearly, $\Delta E\sim 14 B[T]K, with magnetic field.Comment: 5 pages, 3 figures, title changed, references added, JETP Letters versio

    The electronic properties of bilayer graphene

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    We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energy. We take into account five tight-binding parameters of the Slonczewski-Weiss-McClure model of bulk graphite plus intra- and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects.Comment: review, 31 pages, 15 figure

    High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

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    The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created.Comment: 4 pages, 4 figure
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