15,685 research outputs found

    Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

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    The effects of hafnium oxide (hboxHfO2)(hbox{HfO}-{2}) gate dielectric annealing treatment in oxygen (hboxO2)(hbox{O}-{2}) and ammonia (hboxNH3)(hbox{NH}-{3}) ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with hboxHfO2hbox{HfO}-{2} gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of -0.5 V and an operating voltage as low as -4 V. Results indicate that the PTFT with hboxNH3hbox{NH}-{3}-annealed hboxHfO2 hbox{HfO}-{2} shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with hboxO2hbox{O}-{2}-annealed hboxHfO2 hbox{HfO}-{2}. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with hboxNH3hbox{NH}-{3} -annealed hboxHfO2hbox{HfO}-{2} is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.published_or_final_versio

    Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

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    A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the P3HT/SiO 2 interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT. © 2011 IEEE.published_or_final_versio

    Quantification of the performance of chaotic micromixers on the basis of finite time Lyapunov exponents

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    Chaotic micromixers such as the staggered herringbone mixer developed by Stroock et al. allow efficient mixing of fluids even at low Reynolds number by repeated stretching and folding of the fluid interfaces. The ability of the fluid to mix well depends on the rate at which "chaotic advection" occurs in the mixer. An optimization of mixer geometries is a non trivial task which is often performed by time consuming and expensive trial and error experiments. In this paper an algorithm is presented that applies the concept of finite-time Lyapunov exponents to obtain a quantitative measure of the chaotic advection of the flow and hence the performance of micromixers. By performing lattice Boltzmann simulations of the flow inside a mixer geometry, introducing massless and non-interacting tracer particles and following their trajectories the finite time Lyapunov exponents can be calculated. The applicability of the method is demonstrated by a comparison of the improved geometrical structure of the staggered herringbone mixer with available literature data.Comment: 9 pages, 8 figure

    A note on the boundary contribution with bad deformation in gauge theory

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    Motivated by recently progresses in the study of BCFW recursion relation with nonzero boundary contributions for theories with scalars and fermions\cite{Bofeng}, in this short note we continue the study of boundary contributions of gauge theory with the bad deformation. Unlike cases with scalars or fermions, it is hard to use Feynman diagrams directly to obtain boundary contributions, thus we propose another method based on the N=4{\cal N}=4 SYM theory. Using this method, we are able to write down a useful on-shell recursion relation to calculate boundary contributions from related theories. Our result shows the cut-constructibility of gauge theory even with the bad deformation in some generalized sense.Comment: 16 pages, 7 figure

    Mechanical Metamaterials with Negative Compressibility Transitions

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    When tensioned, ordinary materials expand along the direction of the applied force. Here, we explore network concepts to design metamaterials exhibiting negative compressibility transitions, during which a material undergoes contraction when tensioned (or expansion when pressured). Continuous contraction of a material in the same direction of an applied tension, and in response to this tension, is inherently unstable. The conceptually similar effect we demonstrate can be achieved, however, through destabilisations of (meta)stable equilibria of the constituents. These destabilisations give rise to a stress-induced solid-solid phase transition associated with a twisted hysteresis curve for the stress-strain relationship. The strain-driven counterpart of negative compressibility transitions is a force amplification phenomenon, where an increase in deformation induces a discontinuous increase in response force. We suggest that the proposed materials could be useful for the design of actuators, force amplifiers, micro-mechanical controls, and protective devices.Comment: Supplementary information available at http://www.nature.com/nmat/journal/v11/n7/abs/nmat3331.htm

    High-mass X-ray binaries and OB-runaway stars

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    High-mass X-ray binaries (HMXBs) represent an important phase in the evolution of massive binary systems. HMXBs provide unique diagnostics to test massive-star evolution, to probe the physics of radiation-driven winds, to study the process of mass accretion, and to measure fundamental parameters of compact objects. As a consequence of the supernova explosion that produced the neutron star (or black hole) in these systems, HMXBs have high space velocities and thus are runaways. Alternatively, OB-runaway stars can be ejected from a cluster through dynamical interactions. Observations obtained with the Hipparcos satellite indicate that both scenarios are at work. Only for a minority of the OB runaways (and HMXBs) a wind bow shock has been detected. This might be explained by the varying local conditions of the interstellar medium.Comment: 15 pages, latex (sty file included) with 5 embedded figures (one in jpg format), to appear in Proc. "Influence of binaries on stellar population studies", Eds. Vanbeveren, Van Rensberge

    Efficient unidirectional nanoslit couplers for surface plasmons

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    Plasmonics is based on surface plasmon polariton (SPP) modes which can be laterally confined below the diffraction limit, thereby enabling ultracompact optical components. In order to exploit this potential, the fundamental bottleneck of poor light-SPP coupling must be overcome. In established SPP sources (using prism, grating} or nanodefect coupling) incident light is a source of noise for the SPP, unless the illumination occurs away from the region of interest, increasing the system size and weakening the SPP intensity. Back-side illumination of subwavelength apertures in optically thick metal films eliminates this problem but does not ensure a unique propagation direction for the SPP. We propose a novel back-side slit-illumination method based on drilling a periodic array of indentations at one side of the slit. We demonstrate that the SPP running in the array direction can be suppressed, and the one propagating in the opposite direction enhanced, providing localized unidirectional SPP launching.Comment: 13 pages, 4 figure

    Isotope effect on the transition temperature TcT_c in Fe-based superconductors: the current status

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    The results of the Fe isotope effect (Fe-IE) on the transition temperature TcT_c obtained up to date in various Fe-based high temperature superconductors are summarized and reanalyzed by following the approach developed in [Phys. Rev. B 82, 212505 (2010)]. It is demonstrated that the very controversial results for Fe-IE on TcT_c are caused by small structural changes occurring simultaneously with the Fe isotope exchange. The Fe-IE exponent on TcT_c [αFe=(ΔTc/Tc)/(ΔM/M)\alpha_{\rm Fe}=-(\Delta T_c/T_c)/(\Delta M/M), MM is the isotope mass] needs to be decomposed into two components with the one related to the structural changes (αFestr\alpha_{\rm Fe}^{\rm str}) and the genuine (intrinsic) one (αFeint\alpha_{\rm Fe}^{\rm int}). The validity of such decomposition is further confirmed by the fact that αFeint\alpha_{\rm Fe}^{\rm int} coincides with the Fe-IE exponent on the characteristic phonon frequencies αFeph\alpha_{\rm Fe}^{\rm ph} as is reported in recent EXAFS and Raman experiments.Comment: 7 pages, 4 figures. The paper is partially based on the results published in [New J. Phys. 12, 073024 (2010) = arXiv:1002.2510] and [Phys. Rev. B 82, 212505 (2010) = arXiv:1008.4540

    Manipulating infrared photons using plasmons in transparent graphene superlattices

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    Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we demonstrate transparent graphene superlattices which can manipulate infrared photons utilizing the collective oscillations of carriers, i.e., plasmons of the ensemble of multiple graphene layers. The superlattice is formed by depositing alternating wafer-scale graphene sheets and thin insulating layers, followed by patterning them all together into 3-dimensional photonic-crystal-like structures. We demonstrate experimentally that the collective oscillation of Dirac fermions in such graphene superlattices is unambiguously nonclassical: compared to doping single layer graphene, distributing carriers into multiple graphene layers strongly enhances the plasmonic resonance frequency and magnitude, which is fundamentally different from that in a conventional semiconductor superlattice. This property allows us to construct widely tunable far-infrared notch filters with 8.2 dB rejection ratio and terahertz linear polarizers with 9.5 dB extinction ratio, using a superlattice with merely five graphene atomic layers. Moreover, an unpatterned superlattice shields up to 97.5% of the electromagnetic radiations below 1.2 terahertz. This demonstration also opens an avenue for the realization of other transparent mid- and far-infrared photonic devices such as detectors, modulators, and 3-dimensional meta-material systems.Comment: under revie
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