Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes

Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considere

Highly diastereoselective 1,3-dipolar cycloaddition of nonstabilized azomethine ylides to 3-nitro-2-trihalomethyl-2H-chromenes: Synthesis of 1-benzopyrano[3,4-c]pyrrolidines

Reactions of 3-nitro-2-trifluoro(trichloro)methyl-2H-chromenes, including 2-unsubstituted derivatives, with N-alkyl-α-amino acids (sarcosine, proline) and paraformaldehyde proceed diastereoselectively to give 1-benzopyrano[3,4-c]pyrrolidines in good yields as a result of a 1,3-dipolar cycloaddition of the intermediate nonstabilized azomethine ylide at the Δ3-bond of the chromene system. © 2013 Elsevier Ltd. All rights reserved

Black Sea coastal forecasting system

The Black Sea coastal nowcasting and forecasting system was built within the framework of EU FP6 ECOOP (European COastalshelf sea OPerational observing and forecasting system) project for five regions: the south-western basin along the coasts of Bulgaria and Turkey, the north-western shelf along the Romanian and Ukrainian coasts, coastal zone around of the Crimea peninsula, the north-eastern Russian coastal zone and the coastal zone of Georgia. The system operates in the real-time mode during the ECOOP project and afterwards. The forecasts include temperature, salinity and current velocity fields. Ecosystem model operates in the off-line mode near the Crimea coast

Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the film

Second-order nonlinear optical properties of composite material of an azo-chromophore with a tricyanodiphenyl acceptor in a poly(styrene-co-methyl methacrylate) matrix

© 2017 Elsevier B.V.The composite material of new synthesized 4-((4-(N,N-n-dibutylamino) phenyl)diazenyl)-biphenyl-2,3,4-tricarbonitrile (GAS dye) in commercial poly(styrene-co-methyl methacrylate) (PSMMA) was prepared, poled and its nonlinear optical properties compared with DR1 dye were studied. High thermal stability of the composite material was revealed, and the maximal concentration of the chromophore was found to reach ∼20 wt%. The dipole moment, polarizability tensor, and first hyperpolarizability tensor of the investigated dyes were calculated by within the framework of the coupled perturbed density functional theory. A nanosecond second-harmonic generation Maker fringes technique was used which is capable of providing the magnitude of the second-order nonlinearity of optical materials at a wavelength of 1064 nm. For the tested GAS–PSMMA composite material, maximal coefficient d33 was found to be 50 pm/V. The nonlinear optical response, which was achieved here, shows possible usefulness of the GAS dye as a component for molecular design of nonlinear-optical materials with advanced characteristics

Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate

Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained

Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular bea

Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2